Patents by Inventor Mathias BERSWEILER

Mathias BERSWEILER has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Magnetoresistance effect element and magnetic memory
    Patent number: 10658572
    Abstract: A magnetoresistance effect element includes first and second magnetic layers having a perpendicular magnetization direction, and a first non-magnetic layer disposed adjacent to the first magnetic layer and on a side opposite to a side on which the second magnetic layer is disposed. An interfacial perpendicular magnetic anisotropy exists at an interface between the first magnetic layer and the first non-magnetic layer, and the anisotropy causes the first magnetic layer to have a magnetization direction perpendicular to the surface of the layers. An atomic fraction of all magnetic elements to all magnetic and non-magnetic elements included in the second magnetic layer is smaller than that of the first magnetic layer.
    Type: Grant
    Filed: November 2, 2018
    Date of Patent: May 19, 2020
    Assignee: TOHOKU UNIVERSITY
    Inventors: Hideo Sato, Shoji Ikeda, Mathias Bersweiler, Hiroaki Honjo, Kyota Watanabe, Shunsuke Fukami, Fumihiro Matsukura, Kenchi Ito, Masaaki Niwa, Tetsuo Endoh, Hideo Ohno
  • MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
    Publication number: 20190074433
    Abstract: A magnetoresistance effect element includes first and second magnetic layers having a perpendicular magnetization direction, and a first non-magnetic layer disposed adjacent to the first magnetic layer and on a side opposite to a side on which the second magnetic layer is disposed. An interfacial perpendicular magnetic anisotropy exists at an interface between the first magnetic layer and the first non-magnetic layer, and the anisotropy causes the first magnetic layer to have a magnetization direction perpendicular to the surface of the layers. An atomic fraction of all magnetic elements to all magnetic and non-magnetic elements included in the second magnetic layer is smaller than that of the first magnetic layer.
    Type: Application
    Filed: November 2, 2018
    Publication date: March 7, 2019
    Applicant: TOHOKU UNIVERSITY
    Inventors: Hideo SATO, Shoji IKEDA, Mathias BERSWEILER, Hiroaki HONJO, Kyota WATANABE, Shunsuke FUKAMI, Fumihiro MATSUKURA, Kenchi ITO, Masaaki NIWA, Tetsuo ENDOH, Hideo OHNO
  • Magnetoresistance effect element and magnetic memory
    Patent number: 10164174
    Abstract: A magnetoresistance effect element includes first and second magnetic layers having a perpendicular magnetization direction, and a first non-magnetic layer disposed adjacent to the first magnetic layer and on a side opposite to a side on which the second magnetic layer is disposed. An interfacial perpendicular magnetic anisotropy exists at an interface between the first magnetic layer and the first non-magnetic layer, and the anisotropy causes the first magnetic layer to have a magnetization direction perpendicular to the surface if the layers. The second magnetic layer has a saturation magnetization lower than that of the first magnetic layer, and an interfacial magnetic anisotropy energy density (Ki) at the interface between the first magnetic layer and the first non-magnetic layer is greater than that of an interface between the first non-magnetic layer and second magnetic layers if being disposed adjacent each other.
    Type: Grant
    Filed: January 16, 2018
    Date of Patent: December 25, 2018
    Assignee: TOHOKU UNIVERSITY
    Inventors: Hideo Sato, Shoji Ikeda, Mathias Bersweiler, Hiroaki Honjo, Kyota Watanabe, Shunsuke Fukami, Fumihiro Matsukura, Kenchi Ito, Masaaki Niwa, Tetsuo Endoh, Hideo Ohno
  • MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
    Publication number: 20180175286
    Abstract: A magnetoresistance effect element includes first and second magnetic layers having a perpendicular magnetization direction, and a first non-magnetic layer disposed adjacent to the first magnetic layer and on a side opposite to a side on which the second magnetic layer is disposed. An interfacial perpendicular magnetic anisotropy exists at an interface between the first magnetic layer and the first non-magnetic layer, and the anisotropy causes the first magnetic layer to have a magnetization direction perpendicular to the surface if the layers. The second magnetic layer has a saturation magnetization lower than that of the first magnetic layer, and an interfacial magnetic anisotropy energy density (Ki) at the interface between the first magnetic layer and the first non-magnetic layer is greater than that of an interface between the first non-magnetic layer and second magnetic layers if being disposed adjacent each other.
    Type: Application
    Filed: January 16, 2018
    Publication date: June 21, 2018
    Applicant: TOHOKU UNIVERSITY
    Inventors: Hideo SATO, Shoji IKEDA, Mathias BERSWEILER, Hiroaki HONJO, Kyota WATANABE, Shunsuke FUKAMI, Fumihiro MATSUKURA, Kenchi ITO, Masaaki NIWA, Tetsuo ENDOH, Hideo OHNO