Abstract: A method and apparatus for obtaining in-situ data of a substrate in a semiconductor substrate processing chamber is provided. The apparatus includes an optics assembly for acquiring data regarding a substrate and an actuator assembly adapted to laterally move the optics assembly in two dimensions relative to the substrate.

Abstract: A method for automatic determination of a state of a substrate in a plasma processing chamber is provided. Substrate reflectance data is collected in a processing chamber prior to processing to be analyzed with reference reflectance data to determine if the substrate state meets a control criterion. The substrate state may define the thickness and the qualities of the films on the substrate, the critical dimensions of the different layers on the substrate. The reflectance data is analyzed using a multi-variant analysis technique, such as principle component analysis. In addition to analyzing substrate state prior to processing, substrate reflectance could also be collected in a processing chamber during processing to be analyzed with reference reflectance data to further determine if the substrate state and/or the substrate processing are meeting a control criterion.

Abstract: In determining an endpoint of etching a substrate, light that is directed toward the substrate is reflected from the substrate. A wavelength of the light is selected to locally maximize the intensity of the reflected light at an initial time point of the etching process. The reflected light is detected to determine an endpoint of the substrate etching process.

Abstract: A method and apparatus for obtaining in-situ data of a substrate in a semiconductor substrate processing chamber is provided. The apparatus includes an optics assembly for acquiring data regarding a substrate and an actuator assembly adapted to laterally move the optics assembly in two dimensions relative to the substrate.

Abstract: In determining an endpoint of etching a substrate, light that is directed toward the substrate is reflected from the substrate. A wavelength of the light is selected to locally maximize the intensity of the reflected light at an initial time point of the etching process. The reflected light is detected to determine an endpoint of the substrate etching process.

Abstract: A method and apparatus for automatic determination of semiconductor plasma chamber matching a source of fault are provided. Correlated plasma attributes are measured for process used for calibration both in a chamber under study and in a reference chamber. Principal component analysis then is performed on the measured correlated attributes so as to generate steady principal components and transitional principal components; and these principal components are compared to reference principal components associated with a reference chamber. The process used for calibration includes a regular plasma process followed by a process perturbation of one process parameter. Similar process perturbation runs are conducted several times to include different perturbation parameters. By performing inner products of the principal components of chamber under study and the reference chamber, matching scores can be reached. Automatic chamber matching can be determined by comparing these scores with preset control limits.

Abstract: A method and apparatus for obtaining in-situ data of a substrate in a semiconductor substrate processing chamber is provided. The apparatus includes an optics assembly for acquiring data regarding a substrate and an actuator assembly adapted to laterally move the optics assembly in two dimensions relative to the substrate.

Abstract: A method for controlling a process for fabricating integrated devices on a substrate. The method includes ex-situ and in-situ measurements of pre-etch and post-etch dimensions for structures formed on the substrate and uses the results of the measurements to adjust process recipes and to control the operational status of etch and external substrate processing equipment. In one exemplary application, the method is used during a multi-pass process for fabricating a capacitive structure of a trench capacitor.

Abstract: In determining an endpoint of etching a substrate, light that is directed toward the substrate is reflected from the substrate. A wavelength of the light is selected to locally maximize the intensity of the reflected light at an initial time point of the etching process. The reflected light is detected to determine an endpoint of the substrate etching process.

Abstract: A Faraday shield for use with a plasma reactor has a variable shielding efficiency. The shield is divided into numerous shield segments that may each be selectively grounded or ungrounded. The rate of transition between fully ungrounded and fully grounded states is controllable so as to maintain stable plasma conditions in the plasma reactor during the transitional period. The time rate of change of the shielding efficiency can be controlled at a predetermined rate once plasma strike is achieved, or can be made conditional to successful matching at the previous shield setting. When the Faraday shield is fully grounded, the amount of on-wafer and on-chamber contamination is reduced by reducing the rate of sputtering of chamber surfaces.

Abstract: A method and apparatus for controlling lateral etching during an etching process. The method and apparatus includes laterally etching a lower layer of a stack of layers in a processing chamber, where an endpoint detection system radiates a spectrum of light over the lower layer being etched and an area over the stack of layers proximate to the lower layer being etched. The intensity of light reflected from at least one of the stacked layers positioned lateral to the lower layer being etched is then measured. An endpoint detection system terminates the etching process upon measuring a predetermined metric associated with the intensity of reflected light from the at least one of the stacked layers.

Abstract: A nozzle for a plasma reactor of the type having a processing chamber, with the nozzle comprising a body having interior and exterior sides and a first end. The interior side defines a throughway having a longitudinal axis, and the first end includes an opening in fluid communication with the throughway. The body extends from the first end, terminating in a second end, and includes an aperture formed proximate to the second end. The aperture is configured to create, from a flow of fluid propagating through the throughway and exiting said aperture, a sheet of the fluid moving tangentially to a flow cell established in the processing chamber.

Abstract: A reactor and method for cleaning the same, the being of the type having a processing chamber with an exhaust port placing said processing chamber in fluid communication with a pump system. An embodiment of the present invention creates a flow of reactive radicals outside of the processing chamber. The flow of reactive radicals is bifurcated to create first and second tributaries of reactive radicals. The first tributary of reactive radicals flows along a first direction into the processing chamber, and the second tributary of reactive radicals flows along a second direction into the pump system.

Abstract: A Faraday shield for use with a plasma reactor has a variable shielding efficiency. The shield is divided into numerous shield segments that may each be selectively grounded or ungrounded. The rate of transition between fully ungrounded and fully grounded states is controllable so as to maintain stable plasma conditions in the plasma reactor during the transitional period. The time rate of change of the shielding efficiency can be controlled at a predetermined rate once plasma strike is achieved, or can be made conditional to successful matching at the previous shield setting. When the Faraday shield is fully grounded, the amount of on-wafer and on-chamber contamination is reduced by reducing the rate of sputtering of chamber surfaces.

Abstract: A method and apparatus for heating a loadlock to inhibit the formation of contaminants within the loadlock. At least one heater is attached to the walls of the loadlock to boil contaminants from the surfaces within the loadlock. These desorbed contaminants are exhausted from the loadlock by a vacuum pump. Alternatively, a purge gas can be supplied to the loadlock while the loadlock is being heated. The flow of purge gas flushes the desorbed contaminants from the loadlock.

Abstract: A method and apparatus for heating a loadlock to inhibit the formation of contaminants within the loadlock. At least one heater is attached to the walls of the loadlock to boil contaminants from the surfaces within the loadlock. These desorbed contaminants are exhausted from the loadlock by a vacuum pump. Alternatively, a purge gas can be supplied to the loadlock while the loadlock is being heated. The flow of purge gas flushes the desorbed contaminants from the loadlock.

Abstract: A method and apparatus for heating a loadlock to inhibit the formation of contaminants within the loadlock. At least one heater is attached to the walls of the loadlock to boil contaminants from the surfaces within the loadlock. These desorbed contaminants are exhausted from the loadlock by a vacuum pump. Alternatively, a purge gas can be supplied to the loadlock while the loadlock is being heated. The flow of purge gas flushes the desorbed contaminants from the loadlock.