Abstract: Memory devices, memory systems, and methods of operating memory devices and systems are disclosed in which a single command can trigger a memory device to perform multiple operations, such as a single refresh command that triggers the memory device to both perform a refresh command and to perform a mode register read. One such memory device comprises a memory, a mode register, and circuitry configured, in response to receiving a command to perform a refresh operation at the memory, to perform the refresh operation at the memory, and to perform a read of the mode register. The memory can be a first memory portion, the memory device can comprise a second memory portion, and the circuitry can be further configured, in response to the command, to provide on-die termination at the second memory portion of the memory system during at least a portion of the read of the mode register.

Abstract: A system comprising a light source, and a retention device configured to receive and retain a sample for measurement. The system includes a detector. An optical path couples light between the light source, the sample when present, and the detector. An optical objective is configured to couple light from the light source to the sample when present, and couple reflected light to the detector. A controller is configured to automatically control focus and/or beam path of the light directed by the optical objective to the sample when present. The system includes a spatially variable filter (SVF) positioned in the optical path. The SVF is configured to have spectral properties that vary as a function of illuminated position on the SVF.

Abstract: A system comprising a light source configured to illuminate a sample under measurement. The system includes a detector configured to receive reflected light from the sample, and the detector generates a signal representing the reflected light. A spatially variable filter (SVF) is positioned in the optical path. The SVF is configured to have spectral properties that vary as a function of illuminated position on the SVF.

Abstract: A system comprising a light source, and a retention device configured to receive and retain a sample for measurement. The system includes a detector. An optical path couples light between the light source, the sample when present, and the detector. An optical objective is coupled to a turret assembly and configured to couple light from the light source to the sample when present, and couple reflected light to the detector. An amplified piezo actuator (APA) assembly is coupled to the turret assembly. A controller is coupled to the APA assembly and configured to automatically control a vertical position of the optical objective using the APA assembly. The detector is configured to output data representing a film thickness and a surface profile of the sample when present.

Abstract: A system comprising a light source, and a retention device configured to receive and retain a sample for measurement. The system includes a detector. An optical path couples light between the light source, the sample when present, and the detector. An optical objective is configured to couple light from the light source to the sample when present, and couple reflected light to the detector. A controller is configured to automatically control focus and/or beam path of the light directed by the optical objective to the sample when present. The detector is configured to output data representing a film thickness and a surface profile of the sample when present.

Abstract: A system comprising a light source, and a retention device configured to receive and retain a sample for measurement. The system includes a detector. An optical path couples light between the light source, the sample when present, and the detector. An optical objective is configured to couple light from the light source to the sample when present, and couple reflected light to the detector. A controller is configured to automatically control focus and/or beam path of the light directed by the optical objective to the sample when present. The system includes a spatially variable filter (SVF) positioned in the optical path. The SVF is configured to have spectral properties that vary as a function of illuminated position on the SVF.

Abstract: A system comprising a light source configured to illuminate a sample under measurement. The system includes a detector configured to receive reflected light from the sample, and the detector generates a signal representing the reflected light. A spatially variable filter (SVF) is positioned in the optical path. The SVF is configured to have spectral properties that vary as a function of illuminated position on the SVF.

Abstract: One embodiment of the present invention is a photoresist formulation that includes e-beam cross-linkable substituents, which substituents include one or more of the following functional groups: (a) carbon-carbon double bonds; (b) a strained ring system; (c) a halogenated compound; and (d) one or more organo-silicon moieties.

Abstract: It has now been surprisingly found that by exposing a photoresist to flood electron beam exposure in combination with optical exposure, that the pullback on the upper region of lithographic images in resist can be virtually eliminated during electron beam processing. This unexpected result is due to the fact that the electron beam exposure and optional bake are carried out prior to development of the resist. This means that the resist shrinkage that is seen as a result of these steps is constrained laterally by the resist film itself. Thus, the resist is free to shrink vertically, and the resulting shrinkage provides a reduction in the line slimming and an improvement in the etch rate of the resist. This leads to the formation of a better resist image.

Abstract: An improved dopant application system and method for the manufacture of microelectronic devices accurately places dopant on and within a dielectric or semiconductor surface. Diffusing and activating p-type and n-type dopants in dielectric or semiconductor substrates is achieved by means of electron beam irradiation.

Abstract: A process for the formation of structures in microelectronic devices such as integrated circuit devices. Vias, interconnect metallization and wiring lines are formed using single and dual damascene techniques wherein dielectric layers are treated with a wide electron beam exposure.

Abstract: It has now been surprisingly found that by exposing a photoresist to flood electron beam exposure in combination with optical exposure, that the pullback on the upper region of lithographic images in resist can be virtually eliminated during electron beam processing. This unexpected result is due to the fact that the electron beam exposure and optional bake are carried out prior to development of the resist. This means that the resist shrinkage that is seen as a result of these steps is constrained laterally by the resist film itself. Thus, the resist is free to shrink vertically, and the resulting shrinkage provides a reduction in the line slimming and an improvement in the etch rate of the resist. This leads to the formation of a better resist image.

Abstract: A method for increasing the etch resistance of positive working chemically amplified photoresist such as 193 nanometer sensitive photoresist, 157 nanometer sensitive photoresist, and deep-UV 248 nanometer sensitive photoresist while improving and maintaining fidelity of lithographic features and critical dimensions. The method involves coating and drying a photosensitive composition onto a substrate. The photosensitive composition comprises a water insoluble, acid decomposable polymer which is substantially transparent to ultraviolet or x-ray radiation and a compound capable of generating an acid upon exposure to sufficient activating ultraviolet, electron beam or x-ray radiation energy.

Abstract: One embodiment of the present invention is a photoresist formulation that includes e-beam cross-linkable substituents, which substituents include one or more of the following functional groups: (a) carbon-carbon double bonds; (b) a strained ring system; (c) a halogenated compound; and (d) one or more organo-silicon moieties.

Abstract: An electron beam exposure method is described which provides a means of curing spin-on-glass or spin-on-polymer dielectric material formed on a semiconductor wafer. The dielectric material insulates the conductive metal layer and planarizes the topography in the process of manufacturing multilayered integrated circuits. The method utilizes a large area, uniform electron beam exposure system in a soft vacuum environment. A wafer coated with uncured dielectric material is irradiated with electrons of sufficient energy to penetrate the entire thickness of the dielectric material and is simultaneously heated by infrared heaters. By adjusting the process conditions, such as electron beam total dose and energy, temperature of the wafer, and ambient atmosphere, the properties of the cured dielectric material can be modified.

Abstract: A process for the formation of structures in microelectronic devices such as integrated circuit devices wherein a patterned layer of a metal, alloy, nitride or silicide is subjected to a low temperature, wide beam electron beam annealing. The process involves depositing a silicide, nitride, metal, or metal alloy layer onto a substrate; and then overall flood exposing said entire layer to electron beam radiation under conditions sufficient to anneal the layer.

Abstract: A method for increasing the etch resistance of positive working chemically amplified photoresist such as 193 nanometer sensitive photoresist, 157 nanometer sensitive photoresist, and deep-UV 248 nanometer sensitive photoresist while improving and maintaining fidelity of lithographic features and critical dimensions. The method involves coating and drying a photosensitive composition onto a substrate. The photosensitive composition comprises a water insoluble, acid decomposable polymer which is substantially transparent to ultraviolet or x-ray radiation and a compound capable of generating an acid upon exposure to sufficient activating ultraviolet, electron beam or x-ray radiation energy.

Abstract: A wafer processing cluster tool, having one or more electron beam exposure modules receives wafers from the tool transport mechanism at the internal vacuum pressure of the machine. The loading, unloading, handling and processing of wafers in the machine can occur while other wafers are being treated. The cluster tool has a transport module enclosing an internal volume continuously maintainable under vacuum, a plurality of ports and a wafer transport mechanism for selectively transferring wafers among processing modules. The processing modules perform wafer processing therein under vacuum. At least one semiconductor wafer processing module is an electron beam radiation module. The tool further has a loading module and an unloading module attached to the transport module which are capable of inserting and removing wafers into and out of the transport module from an external environment.

Abstract: A process for the formation of structures in microelectronic devices such as integrated circuit devices wherein a patterned layer of a metal, alloy, nitride or silicide is subjected to a low temperature, wide beam electron beam annealing. The process involves depositing a silicide, nitride, metal, or metal alloy layer onto a substrate; and then overall flood exposing said entire layer to electron beam radiation under conditions sufficient to anneal the layer.

Abstract: An improved dopant application system and method for the manufacture of microelectronic devices accurately places dopant on and within a dielectric or semiconductor surface. Diffusing and activating p-type and n-type dopants in dielectric or semiconductor substrates is achieved by means of electron beam irradiation.