Abstract: An optoelectronic semiconductor component includes a semiconductor chip having a semiconductor layer sequence including an active region that generates radiation; a radiation exit surface running parallel to the active region; a mounting side surface that fixes the semiconductor component and runs obliquely or perpendicularly to the radiation exit surface and at which at least one contact area for external electrical contacting is accessible; a molded body molded onto the semiconductor chip in places and forming the mounting side surface at least in regions; and a contact track arranged on the molded body and electrically conductively connecting the semiconductor chip to the at least one contact area.

Abstract: A thin-film LED comprising a barrier layer (3), a first mirror layer (2) succeeding the barrier layer (3), a layer stack (5) succeeding the first mirror layer (2), and at least one contact structure (6) succeeding the layer stack (5). The layer stack (5) has at least one active layer (5a) which emits electromagnetic radiation. The contact structure (6) is arranged on a radiation exit area (4) and has a contact area (7). The first mirror layer (2) has, in a region lying opposite the contact area of the contact structure (6), a cutout which is larger than the contact area (7) of the contact structure (6). The efficiency of the thin-film LED is increased as a result.

Abstract: An optoelectronic semiconductor component includes an optoelectronic semiconductor chip with a first surface and a second surface. The component also includes a protective chip which has a protective diode, a first surface and a second surface. The semiconductor chip and the protective chip are embedded in a molded body. A first electrical contact and a second electrical contact are arranged on the first surface of the semiconductor chip. A third electrical contact and a fourth electrical contact are arranged on the first surface of the protective chip. The first electrical contact is electrically connected to the third electrical contact. In addition, the second electrical contact is electrically connected to the fourth electrical contact.

Abstract: A method of producing an optoelectronic component includes providing a carrier having a carrier surface, a first lateral section of the carrier surface being raised relative to a second lateral section of the carrier surface; arranging an optoelectronic semiconductor chip having a first surface and a second surface on the carrier surface, wherein the first surface faces toward the carrier surface; and forming a molded body having an upper side facing toward the carrier surface and a lower side opposite the upper side, the semiconductor chip being at least partially embedded in the molded body.

Abstract: An optoelectronic semi-conductor component includes an optoelectronic semi-conductor chip embedded into an electrically-insulating shaped body that has an upper face and a lower face. In the shaped body, an electrical via is also embedded which forms an electrically-conductive connection between the upper face and the lower face of the shaped body. On the upper face of the shaped body, a reflective layer is arranged which forms an electrically-conductive connection between an electrical semi-conductor chip contact and the via. The reflective layer covers at least 50% of the upper face of the shaped body.

Abstract: The invention relates to an optoelectronic device (101), comprising: —a semiconductor layer sequence (103) comprising an emitter layer (105) for emitting electromagnetic radiation, —a converter (113) for converting electromagnetic radiation with a first wavelength into an electromagnetic radiation with a second wavelength which differs from the first wavelength, —a scattering body (109) for scattering at least a part of the electromagnetic radiation emitted by the emitter layer (105) in the direction of the converter (113) in order to convert at least a part of the emitted electromagnetic radiation, wherein the scattering body (109) comprises a positive, temperature-dependent scattering cross-section and so, as the temperature increases, scattering of the electromagnetic radiation in the scattering body (109) in the direction of the converter can be increased. The invention also relates to a scattering body (109).

Abstract: An optoelectronic semiconductor chip, based on a nitride material system, comprising at least one active quantum well, wherein during operation electromagnetic radiation is generated in the active quantum well, the active quantum well comprises N successive zones in a direction parallel to a growth direction z of the semiconductor chip, N being a natural number greater than or equal to 2, the zones are numbered consecutively in a direction parallel to the growth direction z, at least two of the zones have average aluminium contents k which differ from one another, and the active quantum well fulfils the condition: 50??(35?k(z))dz?2.5N?1.5?dz?120.

Abstract: In at least one embodiment, the optoelectronic semiconductor component contains at least one chip support having electrical contact devices and also at least one optoelectronic semiconductor chip that is set up to produce radiation and that is mechanically and electrically mounted on the chip support. A component support is attached to the chip support. The semiconductor chip is situated in a recess in the component support. The component support is electrically insulated from the chip support and from the semiconductor chip. The component support is formed from a metal or from a metal alloy. On a top that is remote from the chip support, the component support is provided with a reflective coating.

Abstract: The invention relates to an An arrangement (1) for generating white light (5), having at least two light-emitting diodes, wherein the first diode (2) is designed to generate blue light, wherein a conversion element (4) is associated with the first diode, wherein the conversion element is designed to convert a part of the blue light from the first diode into green light, and wherein the conversion element is designed to convert a part of the blue light from the first diode into red light, wherein the second diode (3) is provided to emit red light.

Abstract: An optoelectronic semi-conductor component includes an optoelectronic semi-conductor chip embedded into an electrically-insulating shaped body that has an upper face and a lower face. In the shaped body, an electrical via is also embedded which forms an electrically-conductive connection between the upper face and the lower face of the shaped body. On the upper face of the shaped body, a reflective layer is arranged which forms an electrically-conductive connection between an electrical semi-conductor chip contact and the via. The reflective layer covers at least 50% of the upper face of the shaped body.

Abstract: Disclosed is a non-transitory computer-readable storage medium that stores a game program that processes progress of a game using a plurality of game mediums, the game program causing a computer to execute: moving each of the game mediums along a predetermined path in a game field including a plurality of regions; first displaying a selection object capable of selecting at least one of the plurality of regions so that the selection object is fired according to an operation detected by a predetermined input unit; and changing, when one of the plurality of regions is selected by the selection object, an attribute set in the region to change the predetermined path where the game medium moves.

Abstract: A method is specified for producing a light-emitting semiconductor component, in which method a light-emitting semiconductor layer sequence (2) with an active layer (3) that is designed to emit light during operation of the semiconductor component is provided, a wavelength conversion layer (4) containing at least one wavelength conversion material is applied on the semiconductor layer sequence (2), and a ceramic layer (5) is applied on the wavelength conversion layer (4) by means of an aerosol deposition process. A light-emitting semiconductor component is also specified.

Abstract: An optoelectronic device having an active layer that includes a multiplicity of structural elements spaced apart from one another laterally, wherein the structural elements each have a quantum well structure including at least one barrier layer composed of Inx1Aly1Ga1-x1-y1N, wherein 0?x1?1, 0?y1?1 and x1+y1?1, and at least one quantum well layer composed of Inx2Aly2Ga1-x2-y2N, wherein 0?x2?1, 0?y2?1 and x2+y2?1.

Abstract: An optoelectronic semiconductor component has a volume-emitting sapphire flip-chip with an upper side and a lower side. This optoelectronic semiconductor component is embedded in an optically transparent mold body with an upper side and a lower side.

Abstract: A lighting device with front carrier, rear carrier and plurality of light-emitting diode chips, which when in operation emits light and releases waste heat, wherein rear carrier is covered at least in selected locations by front carrier, light-emitting diode chips are arranged between rear carrier and front carrier to form array, light-emitting diodes are contacted electrically by rear and/or front carrier and immobilized mechanically by rear carrier and front carrier, front carrier is coupled thermally conductively to light-emitting diode chips and includes light outcoupling face remote from light-emitting diode chips, which light outcoupling face releases some of waste heat released by light-emitting diode chips into surrounding environment, each light-emitting diode chip is actuated with electrical nominal power of 100 mW or less when lighting device is in operation and has light yield of 100 lm/W or more.

Abstract: A process of producing a component includes providing a substrate having an electrically conductive surface in the form of an electrically conductive layer; subdividing the layer with the aid of a laser process into a first electrically autonomous region and a second electrically autonomous region, wherein an electrically insulating region is formed in the electrically conductive layer to electrically separate the electrically autonomous regions; forming an electrical potential difference between the first electrically autonomous region and the second electrically autonomous region; and applying an electrically charged substance or an electrically charged substance mixture onto the first electrically autonomous region and/or the second electrically autonomous region, wherein the electrically autonomous region and/or an amount of the applied electrically charged substance or of the electrically charged substance mixture are adjusted by the electrical potential difference.

Abstract: In at least one embodiment, a surface light source includes one or a more optoelectronic semiconductor chips having a radiation main side for generating a primary radiation. A scattering body is disposed downstream of the radiation main side along a main emission direction of the semiconductor chips. The scatting body is designed for scattering the primary radiation. A main emission direction of the scattering body is oriented obliquely with respect to the main emission direction of the semiconductor chip.

Abstract: An optoelectronic semiconductor chip comprises the following sequence of regions in a growth direction (c) of the semiconductor chip (20): a p doped barrier layer (1) for an active region (2), the active region (2), which is suitable for generating electromagnetic radiation, the active region being based on a hexagonal compound semiconductor, and an n doped barrier layer (3) for the active region (2). Also disclosed are a component comprising such a semiconductor chip, and to a method for producing such a semiconductor chip.

Abstract: An optoelectronic semiconductor chip, based on a nitride material system, comprising at least one active quantum well, wherein during operation electromagnetic radiation is generated in the active quantum well, the active quantum well comprises N successive zones in a direction parallel to a growth direction z of the semiconductor chip, N being a natural number greater than or equal to 2, the zones are numbered consecutively in a direction parallel to the growth direction z, at least two of the zones have average aluminium contents k which differ from one another, and the active quantum well fulfils the condition: 50??(35?k(z))dz?2.5N?1.5?dz?120.

Abstract: An optoelectronic semiconductor chip includes a semiconductor layer stack having an active layer that generates radiation, and a radiation emission side, and a conversion layer disposed on the radiation emission side of the semiconductor layer stack, wherein the conversion layer converts at least a portion of the radiation, which is emitted by the active layer, into radiation of a different wavelength, the radiation emission side of the semiconductor layer stack has a first nanostructuring, and the conversion layer is disposed in this first nanostructuring.