Abstract: A millimeter wave wireless (M2W2) interconnect is used for transmitting and receiving signals at millimeter-wave frequencies for short-range wireless communication with high data rate capability. The transmitter and receiver antennae may comprise an on-chip differential dipole antenna or a bond-wire differential dipole antenna. The bond wire differential dipole antenna is comprised of a pair of bond wires connecting between a pair of pads on an integrated circuit (IC) die and a pair of floating pads on a printed circuit board (PCB).

Abstract: A millimeter wave wireless (M2W2) interconnect is used for transmitting and receiving signals at millimeter-wave frequencies for short-range wireless communication with high data rate capability. The transmitter and receiver antennae may comprise an on-chip differential dipole antenna or a bond-wire differential dipole antenna. The bond wire differential dipole antenna is comprised of a pair of bond wires connecting between a pair of pads on an integrated circuit (IC) die and a pair of floating pads on a printed circuit board (PCB).

Abstract: An on-chip Radio Frequency (RF) Interconnect (RF-I) for communication between internal circuit nodes of an integrated circuit is provided. In one embodiment, an integrated circuit is provided that includes an on-chip transmission line, a first circuit node associated with an RF transmitter connected to the transmission line, and a second circuit node associated with an RF receiver connected to the transmission line. In order to transmit data from the first circuit node to the second circuit node, the RF transmitter associated with the first circuit node modulates the data onto an RF carrier frequency to provide a modulated RF signal and transmits the modulated RF signal over the transmission line. The RF receiver associated with the second circuit node receives the modulated RF signal from the transmission line and demodulates the modulated RF signal to recover the data for the second circuit node.

Abstract: A wireless IC interconnect system and a source synchronous CDMA (SS-CDMA) bus interface facilitate interconnections between first and second IC locations. A signal conveyed using the wireless system is modulated and capacitively coupled to a transmission medium, and then capacitively coupled from the medium to a receiver which demodulates the modulated signal and provides the demodulated signal to the second IC location. Multiple signals can be conveyed simultaneously by modulating and demodulating them using multiple access algorithms such as CDMA and/or FDMA. The SS-CDMA bus interface utilizes source synchronous signaling and CDMA techniques to provide high bus concurrency and low channel latency. The interface is re-configurable, and provides multi-chip access in high-bandwidth multi-drop parallel interconnection applications.

Abstract: A wireless IC interconnect system and method facilitates interconnections between first and second IC locations via a wireless transmission medium; the IC locations may be on the same chip or on separate chips. A signal to be conveyed is modulated, and the modulated signal is capacitively coupled to the wireless transmission medium—preferably a properly terminated microstrip transmission line (MTL) or a coplanar waveguide (CPW). The modulated signal is capacitively coupled from the wireless medium to a receiver which demodulates the modulated signal and provides the demodulated signal to the second IC location. In a preferred embodiment, the wireless transmission system conveys numerous signals simultaneously, with the signals modulated and demodulated with multiple access algorithms such as code-division (CDMA) and/or frequency-division (FDMA) multiple access algorithms.

Abstract: A wireless IC interconnect system and a source synchronous CDMA (SS-CDMA) bus interface facilitate interconnections between first and second IC locations. A signal conveyed using the wireless system is modulated and capacitively coupled to a transmission medium, and then capacitively coupled from the medium to a receiver which demodulates the modulated signal and provides the demodulated signal to the second IC location. Multiple signals can be conveyed simultaneously by modulating and demodulating them using multiple access algorithms such as CDMA and/or FDMA. The SS-CDMA bus interface utilizes source synchronous signaling and CDMA techniques to provide high bus concurrency and low channel latency. The interface is re-configurable, and provides multi-chip access in high-bandwidth multi-drop parallel interconnection applications.

Abstract: An active inductor circuit includes a primary and a secondary coil and a drive circuit monolithically integrated on a common substrate to provide high-Q inductors. Each inductor circuit comprises a primary coil which carries a first current that varies with an RF input signal, and a secondary coil which carries a second current that varies with the RF input; an on-chip current source provides the second current. The inductor circuit is arranged such that there is a fixed phase difference of approximately 90° between the first and second currents, and such that the magnetic field induced by the second current compensates for energy that would otherwise be dissipated by the primary coil. When the second current is properly selected, the inductor circuit's input impedance is made purely imaginary, such that the circuit emulates an ideal inductor at a particular frequency.

Abstract: An active inductor circuit includes a primary and a secondary coil and a drive circuit, all of which are monolithically integrated on a common substrate to provide high-Q inductors, which can in turn be used to provide high performance resonators and filters. Each active inductor circuit comprises a primary coil which carries a first current that varies with an RF input signal, and a secondary coil which carries a second current that also varies with the input signal; an on-chip current source provides the second current. The inductor circuit is arranged such that there is a fixed phase difference of approximately 90° between the first and second currents, and such that the magnetic field induced by the second current compensates for energy that would otherwise be dissipated by the primary coil. When the second current is properly selected, the inductor circuit's input impedance is made purely imaginary, such that the circuit emulates an ideal inductor at a particular frequency.

Abstract: A wireless IC interconnect system and method facilitates interconnections between first and second IC locations via a wireless transmission medium; the IC locations may be on the same chip or on separate chips. A signal to be conveyed is modulated, and the modulated signal is capacitively coupled to the wireless transmission medium—preferably a properly terminated microstrip transmission line (MTL) or a coplanar waveguide (CPW). The modulated signal is capacitively coupled from the wireless medium to a receiver which demodulates the modulated signal and provides the demodulated signal to the second IC location. In a preferred embodiment, the wireless transmission system conveys numerous signals simultaneously, with the signals modulated and demodulated with multiple access algorithms such as code-division (CDMA) and/or frequency-division (FDMA) multiple access algorithms.

Abstract: Power amplifiers having reactive networks (such as classes C, C-E, E and F) employ tunable reactive devices in their reactive networks, with the reactive devices respective reactance values capable of being adjusted by means of respective control signals. The tunable reactive devices are made from micro-electromechanical (MEM) devices capable of being integrated with the control circuitry needed to produce the control signals and other amplifier components on a common substrate. The reactive components have high Q values across their adjustment range, enabling the amplifier to produce an output with a low harmonic content over a wide range of input signal frequencies, and a frequency agile, high quality output. The invention can be realized on a number of foundry technologies.

Abstract: A high-Q precision integrated reversibly trimmable singleband oscillator and tunable multiband oscillator are presented that overcome the problems laser trimming and solid state switches. This is accomplished using micro-electromechanical system (MEMS) technology to integrate an amplifier and its tunable LC network on a common substrate. The LC network can be configured to provide a very narrow bandwidth frequency response which peaks at one or more very specific predetermined frequencies without de-Qing the oscillator.

Abstract: A frequency stabilizer circuit in the form of a charge-pump phase-lock loop utilizing a MEMS capacitance device, preferably a tunable MEMS capacitor or a MEMS capacitor bank, which more rapid and with a greater precision determine the phase and frequency of a carrier signal so that it can be extracted, providing an information signal of interest. Such MEMS devices have the added advantage of providing linear capacitance, low insertion losses, higher isolation and high reliability, they run on low power and permit the entire circuit to be fabricated on a common substrate. The use of the MEMS capacitance device reduces unwanted harmonics generated by the circuit's charge pump allowing the filtering requirements to be relaxed or perhaps eliminated.

Abstract: The passive components of a transceiver, such as transmit/receive switches, antennas, inductors, capacitors and resonators, are integrated together on a common substrate to form an integrated passive transceiver section, which, in combination with other components, provides a highly reliable, low-cost, high-performance transceiver. Micro-electromechanical (MEM) device fabrication techniques are used to provide low-loss, high-performance switches and low-loss, high-Q reactive components, and enable the passive transceiver section's high level of integration. The passive components are preferably integrated on a low-cost glass substrate, with transceiver circuits containing active components fabricated on a separate substrate; the separate substrates are interconnected to implement the RF/analog and analog/digital interface portions of a transceiver. Additional MEM switching devices permit multiple, parallel signal paths to be switched in and out of the transceiver circuitry as needed to optimize performance.

Abstract: A high-performance integrable tunable inductor includes a "primary" coil and a "drive" coil placed in close proximity to each other and simultaneously driven with primary and drive currents, respectively. The drive current induces mutual components of inductance in the primary coil which vary with the phase and amplitude relationship between the two currents. These relationships are controlled to precisely establish the impedance of the primary coil, allowing the inductor to be "tuned" to provide a desired inductance or resistance by simply varying the phase and amplitude relationships appropriately. Inductance values tunable over ranges of about 2:1 and Q values of nearly 2000 have been demonstrated. The primary coil can also be made to operate as a relatively large integrated capacitance by setting the phase and amplitude relationships appropriately.

Abstract: A high Q MEMS capacitor that can be continuously tuned with a large tuning ratio or reversibly trimmed using an electrostatic force. The tunable capacitor has a master/slave structure in which a control voltage is applied to the master (control) capacitor to set the capacitance of the slave (signal) capacitor to which an RF signal is applied via a suspended mechanical coupler. The master-slave structure reduces tuning error by reducing the signal capacitor's surface area and increasing its spring constant, and may eliminate the need for discrete blocking inductors by electrically isolating the control and signal capacitors. The trimmable capacitor provides an electrostatic actuator that selectively engages a stopper with teeth on a tunable capacitor structure to fix the trimmed capacitance.

Abstract: A monolithically integrated switched capacitor bank using MEMS technology that is capable of handling GHz signal frequencies in both the RF and millimeter bands while maintaining precise digital selection of capacitor levels over a wide tuning range. Each MEMS switch includes a cantilever arm that is affixed to the substrate and extends over a ground line and a gapped signal line. An electrical contact is formed on the bottom of the cantilever arm positioned above and facing the gap in the signal line. A top electrode atop the cantilever arm forms a control capacitor structure above the ground line. A capacitor structure, preferably a MEMS capacitor suspended above the substrate at approximately the same height as the cantilever arm, is anchored to the substrate and connected in series with a MEMS switch.

Abstract: An integrated, tunable inductance network features a number of fixed inductors fabricated on a common substrate along with a switching network made up of a number of micro-electromechanical (MEM) switches. The switches selectably interconnect the inductors to form an inductance network having a particular inductance value, which can be set with a high degree of precision when the inductors are configured appropriately. The preferred MEM switches introduce a very small amount of resistance, and the inductance network can thus have a high Q. The MEM switches and inductors can be integrated using common processing steps, reducing parasitic capacitance problems associated with wire bonds and prior art switches, increasing reliability, and reducing the space, weight and power requirements of prior art designs.

Abstract: An integrated, variable gain microwave frequency power amplifier comprises a number of individual amplifier stages which contain microwave frequency active devices. Each stage is fed with a common input signal, and the individual stage outputs are connected to respective micro-electromechanical (MEM) switches which, when closed, connect the individual outputs together to form the power amplifier's output. The power amplifier's gain is determined by the number of outputs connected together. The preferred switch provides low insertion loss and excellent electrical isolation, enabling a number of amplifier stages to be efficiently interconnected to provide a wide dynamic range power amplifier. The switches are preferably integrated on a common substrate with the active devices, eliminating the need for wire bonds and reducing parasitic capacitances.

Abstract: A method is described for transferring a thin film of arbitrarily large area from an original substrate to an alternate substrate. An etch stop layer is provided below an epitaxial layer, for example, grown on a semiconductor substrate. In a single transfer process, the epitaxial layer is bonded to a rigid host substrate having desirable thermal, electromagnetic, and/or mechanical properties. The original growth substrate is then removed from the transferred epitaxial layer using the etch stop layer. In a double transfer process, the epitaxial layer is first bonded to a rigid and porous temporary substrate using a thermally or chemically releasable resin, for example. The original growth substrate is removed using the etch stop layer so that the original substrate side of the epitaxial layer can be bonded to a rigid host substrate, as described above. The temporary substrate is then removed using the releasable resin to leave the transferred thin film attached to the host substrate.

Abstract: A C-up HBT is made to operate in the microwave/millimeter frequency range by self-aligning the collector uprisers on the base relative to proton damaged emitter regions and the base contacts which minimizes carrier injection into the extrinsic base. The use of about 7-10% indium in the indium gallium arsenide base is sufficient to stop the FREON-12 etch at the base after totally etching through the collector and single self-aligning mask.