Abstract: A circuit for measuring the dynamic characteristics of encapsulating packages for high-speed integrated circuits includes at least two amplifiers integrated on a semiconductor substrate. These amplifiers have the same input and output impedances as those of the high-speed circuit to be encapsulated within the package. The amplifiers are located in widely spaced relation in order to ensure that there is no internal coupling. Depending on the measurements to be performed, the two amplifiers are mounted in parallel or in antiparallel relation. In order to measure the dynamic characteristics of a package, a measuring circuit is mounted within a package and a signal (V.sub.e) is addressed to an input connection of the package. The transmission and coupling coefficients are deduced from measurement of the signal (V.sub.S) collected on an output connection.

Abstract: A Gunn effect triode working as a programmable frequency dynamic divider or as a VCO oscillator is disclosed. The Gunn effect triode is made up of a layer of III-V material and has three metallizations, namely the anode metallization, the cathode metallization and the gate metallization. According to the invention, firstly, the layer has a non-uniform width between the anode and gate metallization which is either trapezoidal or bounded by two hyperbolas. Then, on the gate metallization DC bias voltage, V.sub.GK, or the anode metallization DC bias voltage, V.sub.AK, there is superimposed an alternating control voltage, V.sub.HF, which is a harmonic of the free oscillating frequency of the triode. The order of division is equal to the harmonic order. The output frequency is adjusted by vernier operation on the harmonic frequency.

Abstract: A circuit for measuring the dynamic characteristics of encapsulating packages for high-speed integrated circuits includes at least two amplifiers integrated on a semiconductor substrate. These amplifiers have the same input and output impedances as those of the high-speed circuit to be encapsulated within the package. The amplifiers are located in widely spaced relation in order to ensure that there is no internal coupling. Depending on the measurements to be performed, the two amplifiers are mounted in parallel or in antiparallel relation. In order to measure the dynamic characteristics of a package, a measuring circuit is mounted within a package and a signal (V.sub.e) is addressed to an input connection of the package. The transmission and coupling coefficients are deduced from measurement of the signal (V.sub.S) collected on an output connection.

Abstract: A bistable logic device, of the RSTT type, operating up to X band. The bistable logic device is organized into three stages: an input stage of four NOR operators (21, 31, 41, 51), a second stage of two OR operators (61, 71) and an output stage of two OR operators (62, 72). Each NOR operator of the input stage drives in parallel an OR operator of the second stage and an OR operator of the output stage. Each of the four OR operators are fed back to an input of one of the four NOR operators of the input stage. The organization in logic NOR/OR form makes it possible to use faster single gate transistors. The present invention may be particularly useful to frequency dividers for interfacing between signals at GHz frequency and measurement and control circuits at MHz frequency.

Abstract: Device for regenerating digital signals transmitted along a coaxial line.So as to transmit information at flow rates greater than or equal to 650 Mbauds, the storage comparator of the invention is constructed in the form of an integrated circuit on AsGa and with negative threshold voltage MESFET transistors. It comprises an adjustable threshold voltage comparator stage, a type-D flip-flop for storage and resynchronization with respect to an external clock, and an output matching stage which may provide summation at its output.

Abstract: A Gunn-effect device originated from a Gunn-triode wherein electrodes are added between gate and anode for receiving high and low potentials representing states 1 and 0 of a binary code. In a normal Gunn-triode a very short pulse on the gate produces a dipole domain which is propagated to the anode within a time of the order of the nanosecond. In the present device, under each finger brought temporarily to a low potential, there is produced a space charge which induces a negative pulse in the anode current of the Gunn device upon the passage of a dipole domain under the finger. Consequently, a series of successive pulses corresponds to a combination of simultaneous binary states. A digital converter using this device is proposed for converting simultaneous binary signals into successive binary signals.

Abstract: A device derived from a bulk semiconductor component called "Gunn-effect triode"; utilizing the propagation of travelling domains between gate and anode of said triode. Forming a register element with such a device consists of a "writing arm" with a semiconductor band of Ga As organized into a Gunn-effect triode and a "reading arm" which is a similar band of Ga As having two electrodes instead of three i.e. an anode and a cathode. The two bands are connected by a bridge of Ga As. The travelling domain triggered by a digital signal is propagated by a lateral extension across the bridge from the writing arm to the reading arm. An n-bit register is carried out by arranging a series of register elements in such a manner that the gate of the first band of the first element forms the input terminal of the register and the cathode of the second band of the first element is connected to the gate of the first band of the second element and so on up to the second band of the n.sup.