Patents by Inventor Maurits Van Der Schaar

Maurits Van Der Schaar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10802409
    Abstract: A method of measuring n values of a parameter of interest (e.g., overlay) relating to a structure forming process, where n>1. The method includes performing n measurements on each of n+1 targets, each measurement performed with measurement radiation having a different wavelength and/or polarization combination and determining the n values for a parameter of interest from the n measurements of n+1 targets, each of the n values relating to the parameter of interest for a different pair of the layers. Each target includes n+1 layers, each layer including a periodic structure, the targets including at least n biased targets having at least one biased periodic structure formed with a positional bias relative to the other layers, the biased periodic structure being in at least a different one of the layers per biased target. Also disclosed is a substrate having such a target and a patterning device for forming such a target.
    Type: Grant
    Filed: April 25, 2018
    Date of Patent: October 13, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Chi-Hsiang Fan, Maurits Van Der Schaar, Youping Zhang
  • Patent number: 10802408
    Abstract: A method for improving the yield of a lithographic process, the method including: determining a parameter fingerprint of a performance parameter across a substrate, the parameter fingerprint including information relating to uncertainty in the performance parameter; determining a process window fingerprint of the performance parameter across the substrate, the process window being associated with an allowable range of the performance parameter; and determining a probability metric associated with the probability of the performance parameter being outside an allowable range. Optionally a correction to the lithographic process is determined based on the probability metric.
    Type: Grant
    Filed: October 16, 2017
    Date of Patent: October 13, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Everhardus Cornelis Mos, Jochem Sebastiaan Wildenberg, Erik Johannes Maria Wallerbos, Maurits Van Der Schaar, Frank Staals, Franciscus Hendricus Arnoldus Elich
  • Patent number: 10794693
    Abstract: Disclosed is a method and associated apparatus of determining a performance parameter (e.g., overlay) of a target on a substrate, and an associated metrology apparatus. The method comprises estimating a set of narrowband measurement values from a set of wideband measurement values relating to the target and determining the performance parameter from said set of narrowband measurement values. The wideband measurement values relate to measurements of the target performed using wideband measurement radiation and may correspond to different central wavelengths. The narrowband measurement values may comprise an estimate of the measurement values which would be obtained from measurement of the target using narrowband measurement radiation having a bandwidth narrower than said wideband measurement radiation.
    Type: Grant
    Filed: August 13, 2018
    Date of Patent: October 6, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Farzad Farhadzadeh, Mohammadreza Hajiahmadi, Maurits Van Der Schaar, Murat Bozkurt
  • Patent number: 10725386
    Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.
    Type: Grant
    Filed: May 24, 2019
    Date of Patent: July 28, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Scott Anderson Middlebrooks, Niels Geypen, Hendrik Jan Hidde Smilde, Alexander Straaijer, Maurits Van Der Schaar, Markus Gerardus Martinus Maria Van Kraaij
  • Publication number: 20200183290
    Abstract: Overlay error of a lithographic process is measured using a plurality of target structures, each target structure having a known overlay bias. A detection system captures a plurality of images (740) representing selected portions of radiation diffracted by the target structures under a plurality of different capture conditions (?1, ?2). Pixel values of the captured images are combined (748) to obtain one or more synthesized images (750). A plurality of synthesized diffraction signals are extracted (744) from the synthesized image or images, and used to calculate a measurement of overlay. The computational burden is reduced compared with extracting diffraction signals from the captured images individually. The captured images may be dark-field images or pupil images, obtained using a scatterometer.
    Type: Application
    Filed: February 16, 2020
    Publication date: June 11, 2020
    Applicant: ASML Netherlands B.V.
    Inventors: Gonzalo Roberto SANGUINETTI, Murat BOZKURT, Maurits VAN DER SCHAAR, Arie Jeffrey DEN BOEF
  • Publication number: 20200110342
    Abstract: A method of measuring overlay uses a plurality of asymmetry measurements from locations (LOI) on a pair of sub-targets (1032, 1034) formed on a substrate (W). For each sub-target, the plurality of asymmetry measurements are fitted to at least one expected relationship (1502, 1504) between asymmetry and overlay, based on a known bias variation deigned into the sub-targets. Continuous bias variation in one example is provided by varying the pitch of top and bottom gratings (P1/P2). Bias variations between the sub-targets of the pair are equal and opposite (P2/P1). Overlay (OV) is calculated based on a relative shift (xs) between the fitted relationships for the two sub-targets. The step of fitting asymmetry measurements to at least one expected relationship includes wholly or partially discounting measurements (1506, 1508, 1510) that deviate from the expected relationship and/or fall outside a particular segment of the fitted relationship.
    Type: Application
    Filed: October 7, 2019
    Publication date: April 9, 2020
    Applicant: ASML Netherlands B.V.
    Inventors: Zili ZHOU, Nitesh Pandey, Olger Victor Zwier, Patrick Warnaar, Maurits Van Der Schaar, Elliott Gerard MC Namara, Arie Jeffrey Den Boef, Paul Christiaan Hinnen, Murat Bozkurt, Joost Jeroen Ottens, Kaustuve Bhattacharyya
  • Patent number: 10585357
    Abstract: A target structure, wherein the target structure is configured to be measured with a metrology tool that has a diffraction threshold; the target structure including: one or more patterns supported on a substrate, the one or more patterns being periodic with a first period in a first direction and periodic with a second period in a second direction, wherein the first direction and second direction are different and parallel to the substrate, and the first period is equal to or greater than the diffraction threshold and the second period is less than the diffraction threshold.
    Type: Grant
    Filed: December 13, 2016
    Date of Patent: March 10, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Maurits Van Der Schaar, Youping Zhang, Hua Xu
  • Publication number: 20200073254
    Abstract: A substrate has first and second target structures formed thereon by a lithographic process. Each target structure has two-dimensional periodic structure formed in a single material layer on a substrate using first and second lithographic steps, wherein, in the first target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a first bias amount that is close to one half of a spatial period of the features formed in the first lithographic step, and, in the second target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a second bias amount close to one half of said spatial period and different to the first bias amount.
    Type: Application
    Filed: November 6, 2019
    Publication date: March 5, 2020
    Applicant: ASML Netherlands B.V.
    Inventors: Maurits VAN DER SCHAAR, Youping ZHANG, Hendrik Jan Hidde SMILDE, Anagnostis TSIATMAS, Adriaan Johan VAN LEEST, Alok VERMA, Thomas THEEUWES, Hugo Augustinus Joseph CRAMER, Paul Christiaan HINNEN
  • Patent number: 10564552
    Abstract: Overlay error of a lithographic process is measured using a plurality of target structures, each target structure having a known overlay bias. A detection system captures a plurality of images (740) representing selected portions of radiation diffracted by the target structures under a plurality of different capture conditions (?1, ?2). Pixel values of the captured images are combined (748) to obtain one or more synthesized images (750). A plurality of synthesized diffraction signals are extracted (744) from the synthesized image or images, and used to calculate a measurement of overlay. The computational burden is reduced compared with extracting diffraction signals from the captured images individually. The captured images may be dark-field images or pupil images, obtained using a scatterometer.
    Type: Grant
    Filed: June 13, 2018
    Date of Patent: February 18, 2020
    Assignee: ASML Netherlands B.V.
    Inventors: Gonzalo Roberto Sanguinetti, Murat Bozkurt, Maurits Van Der Schaar, Arie Jeffrey Den Boef
  • Publication number: 20200050114
    Abstract: An overlay metrology target (600, 900, 1000) contains a plurality of overlay gratings (932-935) formed by lithography. First diffraction signals (740(1)) are obtained from the target, and first asymmetry values (As) for the target structures are derived. Second diffraction signals (740(2)) are obtained from the target, and second asymmetry values (As?) are derived. The first and second diffraction signals are obtained using different capture conditions and/or different designs of target structures and/or bias values. The first asymmetry signals and the second asymmetry signals are used to solve equations and obtain a measurement of overlay error. The calculation of overlay error makes no assumption whether asymmetry in a given target structure results from overlay in the first direction, in a second direction or in both directions. With a suitable bias scheme the method allows overlay and other asymmetry-related properties to be measured accurately, even in the presence of two-dimensional overlay structure.
    Type: Application
    Filed: October 17, 2019
    Publication date: February 13, 2020
    Applicant: ASML Netherlands B.V.
    Inventors: Murat Bozkurt, Maurits Van Der Schaar, Patrick Warnaar, Martin Jacobus Johan Jak, Mohammadreza Hajiahmadi, Grzegorz Grzela, Lukasz Jerzy Macht
  • Publication number: 20200041563
    Abstract: Disclosed is a method for obtaining a computationally determined interference electric field describing scattering of radiation by a pair of structures comprising a first structure and a second structure on a substrate. The method comprises determining a first electric field relating to first radiation scattered by the first structure; determining a second electric field relating to second radiation scattered by the second structure; and computationally determining the interference of the first electric field and second electric field, to obtain a computationally determined interference electric field.
    Type: Application
    Filed: July 31, 2019
    Publication date: February 6, 2020
    Applicant: Stichting VU
    Inventors: Patricius Aloysius Jacobus TINNEMANS, Patrick WARNAAR, Vasco Tomas Tenner, Maurits Van der schaar
  • Publication number: 20200033741
    Abstract: A method and apparatus are described for providing an accurate and robust measurement of a lithographic characteristic or metrology parameter. The method includes providing a range or a plurality of values for each of a plurality of metrology parameters of a metrology target, providing a constraint for each of the plurality of metrology parameters, and calculating, by a processor to optimize/modify these parameters within the range of the plurality of values, resulting in a plurality of metrology target designs having metrology parameters meeting the constraints.
    Type: Application
    Filed: October 4, 2019
    Publication date: January 30, 2020
    Applicant: ASML Netherlands B.V
    Inventors: Maurits Van Der Schaar, Murat Bozkurt, Patrick Warnaar, Stefan Cornelis Theodorus Van Der Sanden
  • Patent number: 10481506
    Abstract: An overlay metrology target (600, 900, 1000) contains a plurality of overlay gratings (932-935) formed by lithography. First diffraction signals (740(1)) are obtained from the target, and first asymmetry values (As) for the target structures are derived. Second diffraction signals (740(2)) are obtained from the target, and second asymmetry values (As?) are derived. The first and second diffraction signals are obtained using different capture conditions and/or different designs of target structures and/or bias values. The first asymmetry signals and the second asymmetry signals are used to solve equations and obtain a measurement of overlay error. The calculation of overlay error makes no assumption whether asymmetry in a given target structure results from overlay in the first direction, in a second direction or in both directions. With a suitable bias scheme the method allows overlay and other asymmetry-related properties to be measured accurately, even in the presence of two-dimensional overlay structure.
    Type: Grant
    Filed: May 1, 2018
    Date of Patent: November 19, 2019
    Assignee: ASML Netherlands B.V.
    Inventors: Murat Bozkurt, Maurits Van Der Schaar, Patrick Warnaar, Martin Jacobus Johan Jak, Mohammadreza Hajiahmadi, Grzegorz Grzela, Lukasz Jerzy Macht
  • Patent number: 10481503
    Abstract: A substrate has first and second target structures formed by a lithographic process. Each target structure has a two-dimensional periodic structure formed in a single layer using first and second lithographic steps. The first target structure has features defined in the second lithographic step displaced relative to features defined in the first lithographic step by a first bias amount. The second target structure has features defined in the second lithographic step displaced relative to features defined in the first lithographic step by a second bias amount. An angle-resolved scatter spectrum of the first target structure and an angle-resolved scatter spectrum of the second target structure is obtained. A measurement of a parameter of a lithographic process is derived from the measurements using asymmetry found in the scatter spectra of the first and second target structures.
    Type: Grant
    Filed: August 15, 2016
    Date of Patent: November 19, 2019
    Assignee: ASML Netherlands B.V.
    Inventors: Maurits Van Der Schaar, Youping Zhang, Hendrik Jan Hidde Smilde, Anagnostis Tsiatmas, Adriaan Johan Van Leest, Alok Verma, Thomas Theeuwes, Hugo Augustinus Joseph Cramer, Paul Christiaan Hinnen
  • Patent number: 10474039
    Abstract: A lithographic apparatus (LA) prints product features and at least one focus metrology pattern (T) on a substrate. The focus metrology pattern is defined by a reflective reticle and printing is performed using EUV radiation (404) incident at an oblique angle (?). The focus metrology pattern comprises a periodic array of groups of first features (422). A spacing (S1) between adjacent groups of first features is much greater than a dimension (CD) of the first features within each group. Due to the oblique illumination, the printed first features become distorted and/or displaced as a function of focus error. Second features 424 may be provided as a reference against which displacement of the first features may be seen. Measurement of this distortion and/or displacement may be by measuring asymmetry as a property of the printed pattern. Measurement can be done at longer wavelengths, for example in the range 350-800 nm.
    Type: Grant
    Filed: December 19, 2016
    Date of Patent: November 12, 2019
    Assignee: ASML Netherlands B.V.
    Inventors: Paul Christiaan Hinnen, Simon Gijsbert Josephus Mathijssen, Maikel Robert Goosen, Maurits Van Der Schaar, Arie Jeffrey Den Boef
  • Patent number: 10474043
    Abstract: A method of measuring a property of a substrate, the substrate having a plurality of targets formed thereon, the method comprising: measuring N targets of the plurality of targets using an optical measurement system, where N is an integer greater than 2 and each of said N targets is measured Wt times, where Wt is an integer greater than 2 so as to obtain N*Wt measurement values; and determining R property values using Q equations and the N*Wt measurement values, where R<Q?N*Wt; wherein the optical measurement system has at least one changeable setting and, for each of the N targets, measurement values are obtained using different setting values of at least one changeable setting.
    Type: Grant
    Filed: December 14, 2017
    Date of Patent: November 12, 2019
    Assignee: ASML Netherlands B.V.
    Inventors: Patrick Warnaar, Maurits Van Der Schaar, Grzegorz Grzela, Erik Johan Koop, Victor Emanuel Calado, Si-Han Zeng
  • Publication number: 20190317412
    Abstract: A method for improving the yield of a lithographic process, the method including: determining a parameter fingerprint of a performance parameter across a substrate, the parameter fingerprint including information relating to uncertainty in the performance parameter; determining a process window fingerprint of the performance parameter across the substrate, the process window being associated with an allowable range of the performance parameter; and determining a probability metric associated with the probability of the performance parameter being outside an allowable range. Optionally a correction to the lithographic process is determined based on the probability metric.
    Type: Application
    Filed: October 16, 2017
    Publication date: October 17, 2019
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Everhardus Cornelis MOS, Jochem Sebastiaan WILDENBERG, Erik Johannes Maria WALLERBOS, Maurits VAN DER SCHAAR, Frank STAALS, Franciscus Hendricus Arnoldus ELICH
  • Patent number: 10437163
    Abstract: A method and apparatus are described for providing an accurate and robust measurement of a lithographic characteristic or metrology parameter. The method includes providing a range or a plurality of values for each of a plurality of metrology parameters of a metrology target, providing a constraint for each of the plurality of metrology parameters, and calculating, by a processor to optimize/modify these parameters within the range of the plurality of values, resulting in a plurality of metrology target designs having metrology parameters meeting the constraints.
    Type: Grant
    Filed: July 14, 2017
    Date of Patent: October 8, 2019
    Assignee: ASML Netherlands B.V.
    Inventors: Maurits Van Der Schaar, Murat Bozkurt, Patrick Warnaar, Stefan Cornelis Theodorus Van Der Sanden
  • Publication number: 20190278190
    Abstract: Disclosed is a method of measuring a parameter of a lithographic process, and associated inspection apparatus. The method comprises measuring at least two target structures on a substrate using a plurality of different illumination conditions, the target structures having deliberate overlay biases; to obtain for each target structure an asymmetry measurement representing an overall asymmetry that includes contributions due to (i) the deliberate overlay biases, (ii) an overlay error during forming of the target structure and (iii) any feature asymmetry. A regression analysis is performed on the asymmetry measurement data by fitting a linear regression model to a planar representation of asymmetry measurements for one target structure against asymmetry measurements for another target structure, the linear regression model not necessarily being fitted through an origin of the planar representation. The overlay error can then be determined from a gradient described by the linear regression model.
    Type: Application
    Filed: May 24, 2019
    Publication date: September 12, 2019
    Applicant: ASML Netherlands B.V.
    Inventors: Scott Anderson MIDDLEBROOKS, Niels GEYPEN, Hendrik Jan Hidde SMILDE, Alexander STRAAIJER, Maurits VAN DER SCHAAR, Markus Gerardus Martinus Maria VAN KRAAIJ
  • Publication number: 20190235394
    Abstract: A method of patterning of at least a layer in a semiconductor device, the method including a patterning step by a patterning means, wherein the patterned layer comprises sensing radiation transmissive portions and sensing radiation blocking portions.
    Type: Application
    Filed: January 25, 2019
    Publication date: August 1, 2019
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Reinder Teun PLUG, Maurits VAN DER SCHAAR