Patents by Inventor Mayank Tayal
Mayank Tayal has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11915745Abstract: A memory architecture for optimizing leakage currents in standby mode and a method thereof is disclosed. The memory architecture includes a plurality of memory segments configured to operate in one or more modes of operations. The plurality of memory segments includes a plurality of decoder slices. Each of the plurality of decoder slice includes a plurality of wordlines running in the row direction; at least one array power header configured for controlling leakage currents within each of the plurality of decoder slice in the row direction; and a retention header. Each of the plurality of power supply rails running in the column direction are segmented within one or more decoder slice to form one or more segmented power supply node.Type: GrantFiled: September 15, 2021Date of Patent: February 27, 2024Assignee: DXCorr Design Inc.Inventors: Sudarshan Kumar, Mayank Tayal, Sagar Vidya Reddy
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Publication number: 20230080591Abstract: A memory architecture for optimizing leakage currents in standby mode and a method thereof is disclosed. The memory architecture includes a plurality of memory segments configured to operate in one or more modes of operations. The plurality of memory segments includes a plurality of decoder slices. Each of the plurality of decoder slice includes a plurality of wordlines running in the row direction; at least one array power header configured for controlling leakage currents within each of the plurality of decoder slice in the row direction; and a retention header. Each of the plurality of power supply rails running in the column direction are segmented within one or more decoder slice to form one or more segmented power supply node.Type: ApplicationFiled: September 15, 2021Publication date: March 16, 2023Inventors: SUDARSHAN KUMAR, MAYANK TAYAL, Sagar Vidya Reddy
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Patent number: 9865331Abstract: A circuit includes a plurality of first circuits, a selection circuit, and a second circuit. The selection circuit is configured to selectively couple a first circuit of the plurality of first circuits with the second circuit. The first circuit includes a first data line and a second data line; and a pair of cross-coupled transistors of a first type coupled with the first data line and the second data line. The second circuit includes a first switching circuit and a second switching circuit; and a pair of cross coupled transistors of a second type different from the first type. The pair of cross-coupled transistors of the first circuit and the pair of cross-coupled transistors of the second circuit are configured as part of a sense amplifier when the first switching circuit and the second switching circuit are turned on.Type: GrantFiled: May 13, 2015Date of Patent: January 9, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventor: Mayank Tayal
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Patent number: 9324412Abstract: A memory circuit includes a memory cell and a data circuit. In a write operation of the memory cell, the data circuit is configured to provide a first write logical value to the first output of the data circuit and to provide a second write logical value to the second output of the data circuit. The first write logical value is different from the second write logical value. In a read operation of the memory cell, the data circuit is configured to provide a same logical value to the first output and the second output of the data circuit.Type: GrantFiled: March 8, 2013Date of Patent: April 26, 2016Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Atul Katoch, Mayank Tayal
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Publication number: 20150243349Abstract: A circuit includes a plurality of first circuits, a selection circuit, and a second circuit. The selection circuit is configured to selectively couple a first circuit of the plurality of first circuits with the second circuit. The first circuit includes a first data line and a second data line; and a pair of cross-coupled transistors of a first type coupled with the first data line and the second data line. The second circuit includes a first switching circuit and a second switching circuit; and a pair of cross coupled transistors of a second type different from the first type. The pair of cross-coupled transistors of the first circuit and the pair of cross-coupled transistors of the second circuit are configured as part of a sense amplifier when the first switching circuit and the second switching circuit are turned on.Type: ApplicationFiled: May 13, 2015Publication date: August 27, 2015Inventor: Mayank TAYAL
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Patent number: 9053817Abstract: A circuit comprises a first data line, a second data line, a charging circuit, a first circuit, a second circuit, a first switching circuit, and a second switching circuit. The charging circuit and the first circuit are each coupled with the first data and the second data line. The first switching circuit is coupled between the first data line and a first node of the second circuit. The second switching circuit is coupled between the second data line and a second node of the second circuit. The data on the first node or the second node represents data in a single-ended circuit. Data on both the first node and the second node represent data in a differential circuit.Type: GrantFiled: June 18, 2013Date of Patent: June 9, 2015Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventor: Mayank Tayal
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Patent number: 9013940Abstract: A sense amplifier comprises a cross coupled pair of inverters, a first transistor, a second transistor, and a capacitive device. The cross coupled pair of inverters includes a first end, a second end, and a third end. The first end is configured to receive a first supply voltage. The second end is coupled with a first terminal of the capacitive device and a first terminal of the first transistor. The third end is coupled with a second terminal of the capacitive device and a first terminal of the second transistor. A second terminal of the first transistor and a second terminal of the second transistor are coupled together and are configured to receive a first control signal. A third terminal of the first transistor and a third terminal of the second transistor are coupled together and are configured to receive a second supply voltage different from the first supply voltage.Type: GrantFiled: February 28, 2013Date of Patent: April 21, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Atul Katoch, Mayank Tayal, Cormac Michael O'Connell
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Patent number: 8929160Abstract: A current flowing through a voltage line and/or a data line in a column of a tracking circuit is determined. A threshold tracking time delay of the tracking circuit is determined. Based on the determined current handled by the voltage line and/or the data line and the determined threshold tracking time delay, a plurality of columns in the tracking circuit, a number of first cells in each column of the plurality of columns, and a number of second cells in the each column of the plurality of columns are determined.Type: GrantFiled: February 28, 2013Date of Patent: January 6, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Atul Katoch, Mayank Tayal
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Publication number: 20140269027Abstract: A circuit comprises a first data line, a second data line, a charging circuit, a first circuit, a second circuit, a first switching circuit, and a second switching circuit. The charging circuit and the first circuit are each coupled with the first data and the second data line. The first switching circuit is coupled between the first data line and a first node of the second circuit. The second switching circuit is coupled between the second data line and a second node of the second circuit. The data on the first node or the second node represents data in a single-ended circuit. Data on both the first node and the second node represent data in a differential circuit.Type: ApplicationFiled: June 18, 2013Publication date: September 18, 2014Inventor: Mayank TAYAL
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Publication number: 20140241077Abstract: A current flowing through a voltage line and/or a data line in a column of a tracking circuit is determined. A threshold tracking time delay of the tracking circuit is determined. Based on the determined current handled by the voltage line and/or the data line and the determined threshold tracking time delay, a plurality of columns in the tracking circuit, a number of first cells in each column of the plurality of columns, and a number of second cells in the each column of the plurality of columns are determined.Type: ApplicationFiled: February 28, 2013Publication date: August 28, 2014Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Atul KATOCH, Mayank TAYAL
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Patent number: 8605529Abstract: Embodiments of the invention are related to sense amplifiers. In an embodiment involving a sense amplifier used with a memory cell, signals BL, ZBL, SN and SP are pre-charged and equalized to a voltage reference, e.g., Vref, using an equalizing signal. A compensation signal, e.g., SAC, is applied to compensate for the mismatch between transistors in the sense amplifier. The word line WL is activated to connect the memory cell to a bit line, e.g., bit line ZBL. Because the memory cell shares the charge with the connected bit line ZBL, it causes a differential signal to be developed between bit lines BL and ZBL. When enough split between bit lines BL and ZBL is developed, signals SP and SAE are raised to VDD (while signal SN has been lowered to VSS) to turn on the sense amplifier and allow it to function as desire. Other embodiments and exemplary applications are also disclosed.Type: GrantFiled: September 14, 2012Date of Patent: December 10, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Atul Katoch, Mayank Tayal
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Publication number: 20130010561Abstract: Embodiments of the invention are related to sense amplifiers. In an embodiment involving a sense amplifier used with a memory cell, signals BL, ZBL, SN and SP are pre-charged and equalized to a voltage reference, e.g., Vref, using an equalizing signal. A compensation signal, e.g., SAC, is applied to compensate for the mismatch between transistors in the sense amplifier. The word line WL is activated to connect the memory cell to a bit line, e.g., bit line ZBL. Because the memory cell shares the charge with the connected bit line ZBL, it causes a differential signal to be developed between bit lines BL and ZBL. When enough split between bit lines BL and ZBL is developed, signals SP and SAE are raised to VDD (while signal SN has been lowered to VSS) to turn on the sense amplifier and allow it to function as desire. Other embodiments and exemplary applications are also disclosed.Type: ApplicationFiled: September 14, 2012Publication date: January 10, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Atul KATOCH, Mayank TAYAL
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Patent number: 8295112Abstract: Embodiments of the invention are related to sense amplifiers. In an embodiment involving a sense amplifier used with a memory cell, signals BL, ZBL, SN and SP are pre-charged and equalized to a voltage reference, e.g., Vref, using an equalizing signal. A compensation signal, e.g., SAC, is applied to compensate for the mismatch between transistors in the sense amplifier. The word line WL is activated to connect the memory cell to a bit line, e.g., bit line ZBL. Because the memory cell shares the charge with the connected bit line ZBL, it causes a differential signal to be developed between bit lines BL and ZBL. When enough split between bit lines BL and ZBL is developed, signals SP and SAE are raised to VDD (while signal SN has been lowered to VSS) to turn on the sense amplifier and allow it to function as desire. Other embodiments and exemplary applications are also disclosed.Type: GrantFiled: March 25, 2010Date of Patent: October 23, 2012Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Atul Katoch, Mayank Tayal
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Publication number: 20100246303Abstract: Embodiments of the invention are related to sense amplifiers. In an embodiment involving a sense amplifier used with a memory cell, signals BL, ZBL, SN and SP are pre-charged and equalized to a voltage reference, e.g., Vref, using an equalizing signal. A compensation signal, e.g., SAC, is applied to compensate for the mismatch between transistors in the sense amplifier. The word line WL is activated to connect the memory cell to a bit line, e.g., bit line ZBL. Because the memory cell shares the charge with the connected bit line ZBL, it causes a differential signal to be developed between bit lines BL and ZBL. When enough split between bit lines BL and ZBL is developed, signals SP and SAE are raised to VDD (while signal SN has been lowered to VSS) to turn on the sense amplifier and allow it to function as desire. Other embodiments and exemplary applications are also disclosed.Type: ApplicationFiled: March 25, 2010Publication date: September 30, 2010Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Atul KATOCH, Mayank TAYAL