Patents by Inventor Mayumi Yamaguchi

Mayumi Yamaguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10168801
    Abstract: To provide a small and light-weight writing instrument that can accurately read information written down on a display portion as electronic information. A pen-shaped device which includes a battery capable of being charged wirelessly from the outside, a first sensor which detects whether a pen nib has contact with a surface, a second sensor which detects movement of the pen nib in contact with the surface, a control circuit which is electrically connected to the first sensor and the second sensor, and a memory which is electrically connected to the control circuit, where the first sensor, the second sensor, the control circuit, and the memory operate by supply of electric power from the battery.
    Type: Grant
    Filed: August 24, 2007
    Date of Patent: January 1, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takeshi Osada, Mayumi Yamaguchi, Konami Izumi
  • Patent number: 10035388
    Abstract: The present invention provides a MEMS and a sensor having the MEMS which can be formed without a process of etching a sacrifice layer. The MEMS and the sensor having the MEMS are formed by forming an interspace using a spacer layer. In the MEMS in which an interspace is formed using a spacer layer, a process for forming a sacrifice layer and an etching process of the sacrifice layer are not required. As a result, there is no restriction on the etching time, and thus the yield can be improved.
    Type: Grant
    Filed: March 16, 2017
    Date of Patent: July 31, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Mayumi Yamaguchi, Konami Izumi, Fuminori Tateishi
  • Publication number: 20170182853
    Abstract: The present invention provides a MEMS and a sensor having the MEMS which can be formed without a process of etching a sacrifice layer. The MEMS and the sensor having the MEMS are formed by forming an interspace using a spacer layer. In the MEMS in which an interspace is formed using a spacer layer, a process for forming a sacrifice layer and an etching process of the sacrifice layer are not required. As a result, there is no restriction on the etching time, and thus the yield can be improved.
    Type: Application
    Filed: March 16, 2017
    Publication date: June 29, 2017
    Inventors: Mayumi YAMAGUCHI, Konami IZUMI, Fuminori TATEISHI
  • Patent number: 9597933
    Abstract: The present invention provides a MEMS and a sensor having the MEMS which can be formed without a process of etching a sacrifice layer. The MEMS and the sensor having the MEMS are formed by forming an interspace using a spacer layer. In the MEMS in which an interspace is formed using a spacer layer, a process for forming a sacrifice layer and an etching process of the sacrifice layer are not required. As a result, there is no restriction on the etching time, and thus the yield can be improved.
    Type: Grant
    Filed: June 4, 2015
    Date of Patent: March 21, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Mayumi Yamaguchi, Konami Izumi, Fuminori Tateishi
  • Patent number: 9487390
    Abstract: A semiconductor element of the electric circuit includes a semiconductor layer over a gate electrode. The semiconductor layer of the semiconductor element is formed of a layer including polycrystalline silicon which is obtained by crystallizing amorphous silicon by heat treatment or laser irradiation, over a substrate. The obtained layer including polycrystalline silicon is also used for a structure layer such as a movable electrode of a structure body. Therefore, the structure body and the electric circuit for controlling the structure body can be formed over one substrate. As a result, a micromachine can be miniaturized. Further, assembly and packaging are unnecessary, so that manufacturing cost can be reduced.
    Type: Grant
    Filed: November 5, 2014
    Date of Patent: November 8, 2016
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Mayumi Yamaguchi, Konami Izumi
  • Publication number: 20150343857
    Abstract: The present invention provides a MEMS and a sensor having the MEMS which can be formed without a process of etching a sacrifice layer. The MEMS and the sensor having the MEMS are formed by forming an interspace using a spacer layer. In the MEMS in which an interspace is formed using a spacer layer, a process for forming a sacrifice layer and an etching process of the sacrifice layer are not required. As a result, there is no restriction on the etching time, and thus the yield can be improved.
    Type: Application
    Filed: June 4, 2015
    Publication date: December 3, 2015
    Inventors: Mayumi Yamaguchi, Konami Izumi, Fuminori Tateishi
  • Patent number: 9130012
    Abstract: Without sacrificial layer etching, a microstructure and a micromachine are manufactured. A separation layer 102 is formed over a substrate 101, and a layer 103 to be a movable electrode is formed over the separation layer 102. At an interface of the separation layer 102, the layer 103 to be a movable electrode is separated from the substrate. A layer 106 to be a fixed electrode is formed over another substrate 105. The layer 103 to be a movable electrode is fixed to the substrate 105 with the spacer layer 103 which is partially provided interposed therebetween, so that the layer 103 to be a movable electrode and a layer 106 to be a fixed electrode face each other.
    Type: Grant
    Filed: May 29, 2014
    Date of Patent: September 8, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Mayumi Yamaguchi, Konami Izumi
  • Patent number: 9054227
    Abstract: The present invention provides a MEMS and a sensor having the MEMS which can be formed without a process of etching a sacrifice layer. The MEMS and the sensor having the MEMS are formed by forming an interspace using a spacer layer. In the MEMS in which an interspace is formed using a spacer layer, a process for forming a sacrifice layer and an etching process of the sacrifice layer are not required. As a result, there is no restriction on the etching time, and thus the yield can be improved.
    Type: Grant
    Filed: August 29, 2014
    Date of Patent: June 9, 2015
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Mayumi Yamaguchi, Konami Izumi, Fuminori Tateishi
  • Publication number: 20150053985
    Abstract: A semiconductor element of the electric circuit includes a semiconductor layer over a gate electrode. The semiconductor layer of the semiconductor element is formed of a layer including polycrystalline silicon which is obtained by crystallizing amorphous silicon by heat treatment or laser irradiation, over a substrate. The obtained layer including polycrystalline silicon is also used for a structure layer such as a movable electrode of a structure body. Therefore, the structure body and the electric circuit for controlling the structure body can be formed over one substrate. As a result, a micromachine can be miniaturized. Further, assembly and packaging are unnecessary, so that manufacturing cost can be reduced.
    Type: Application
    Filed: November 5, 2014
    Publication date: February 26, 2015
    Inventors: Mayumi Yamaguchi, Konami Izumi
  • Publication number: 20140370639
    Abstract: The present invention provides a MEMS and a sensor having the MEMS which can be formed without a process of etching a sacrifice layer. The MEMS and the sensor having the MEMS are formed by forming an interspace using a spacer layer. In the MEMS in which an interspace is formed using a spacer layer, a process for forming a sacrifice layer and an etching process of the sacrifice layer are not required. As a result, there is no restriction on the etching time, and thus the yield can be improved.
    Type: Application
    Filed: August 29, 2014
    Publication date: December 18, 2014
    Inventors: Mayumi Yamaguchi, Konami Izumi, Fuminori Tateishi
  • Patent number: 8884384
    Abstract: A semiconductor element of the electric circuit includes a semiconductor layer over a gate electrode. The semiconductor layer of the semiconductor element is formed of a layer including polycrystalline silicon which is obtained by crystallizing amorphous silicon by heat treatment or laser irradiation, over a substrate. The obtained layer including polycrystalline silicon is also used for a structure layer such as a movable electrode of a structure body. Therefore, the structure body and the electric circuit for controlling the structure body can be formed over one substrate. As a result, a micromachine can be miniaturized. Further, assembly and packaging are unnecessary, so that manufacturing cost can be reduced.
    Type: Grant
    Filed: June 20, 2013
    Date of Patent: November 11, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Mayumi Yamaguchi, Konami Izumi
  • Publication number: 20140262000
    Abstract: Without sacrificial layer etching, a microstructure and a micromachine are manufactured. A separation layer 102 is formed over a substrate 101, and a layer 103 to be a movable electrode is formed over the separation layer 102. At an interface of the separation layer 102, the layer 103 to be a movable electrode is separated from the substrate. A layer 106 to be a fixed electrode is formed over another substrate 105. The layer 103 to be a movable electrode is fixed to the substrate 105 with the spacer layer 103 which is partially provided interposed therebetween, so that the layer 103 to be a movable electrode and a layer 106 to be a fixed electrode face each other.
    Type: Application
    Filed: May 29, 2014
    Publication date: September 18, 2014
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Mayumi Yamaguchi, Konami Izumi
  • Patent number: 8822251
    Abstract: The present invention provides a MEMS and a sensor having the MEMS which can be formed without a process of etching a sacrifice layer. The MEMS and the sensor having the MEMS are formed by forming an interspace using a spacer layer. In the MEMS in which an interspace is formed using a spacer layer, a process for forming a sacrifice layer and an etching process of the sacrifice layer are not required. As a result, there is no restriction on the etching time, and thus the yield can be improved.
    Type: Grant
    Filed: April 20, 2009
    Date of Patent: September 2, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Mayumi Yamaguchi, Konami Izumi, Fuminori Tateishi
  • Patent number: 8759887
    Abstract: To manufacture a micro structure and an electric circuit included in a micro electro mechanical device over the same insulating surface in the same step. In the micro electro mechanical device, an electric circuit including a transistor and a micro structure are integrated over a substrate having an insulating surface. The micro structure includes a structural layer having the same stacked-layer structure as a layered product of a gate insulating layer of the transistor and a semiconductor layer provided over the gate insulating layer. That is, the structural layer includes a layer formed of the same insulating film as the gate insulating layer and a layer formed of the same semiconductor film as the semiconductor layer of the transistor. Further, the micro structure is manufactured by using each of conductive layers used for a gate electrode, a source electrode, and a drain electrode of the transistor as a sacrificial layer.
    Type: Grant
    Filed: June 3, 2013
    Date of Patent: June 24, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Mayumi Yamaguchi, Konami Izumi
  • Patent number: 8741682
    Abstract: Without sacrificial layer etching, a microstructure and a micromachine are manufactured. A separation layer 102 is formed over a substrate 101, and a layer 103 to be a movable electrode is formed over the separation layer 102. At an interface of the separation layer 102, the layer 103 to be a movable electrode is separated from the substrate. A layer 106 to be a fixed electrode is formed over another substrate 105. The layer 103 to be a movable electrode is fixed to the substrate 105 with the spacer layer 103 which is partially provided interposed therebetween, so that the layer 103 to be a movable electrode and a layer 106 to be a fixed electrode face each other.
    Type: Grant
    Filed: March 8, 2012
    Date of Patent: June 3, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Mayumi Yamaguchi, Konami Izumi
  • Patent number: 8686405
    Abstract: A micromachine is generally formed using a semiconductor substrate such as a silicon wafer. One of the objects of the present invention is to realize further reduction in cost by integrating a minute structure and a semiconductor element controlling the minute structure over one insulating surface in one step. A minute structure has a structure in which a first layer formed into a frame-shape are provided over an insulating surface, a space is formed inside the frame, and a second layer is formed to cross over the first layer. Such a minute structure and a thin film transistor can be integrated over one insulating surface in one step.
    Type: Grant
    Filed: October 28, 2011
    Date of Patent: April 1, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Mayumi Yamaguchi, Konami Izumi
  • Patent number: 8624336
    Abstract: It is an object of the present invention to manufacture a micromachine having a plurality of structural bodies with different functions and to shorten the time required for sacrifice layer etching in a process of manufacturing the micromachine. Another object of the present invention is to prevent a structural layer from being attached to a substrate after the sacrifice layer etching. In other words, an object of the present invention is to provide an inexpensive and high-value-added micromachine by improving throughput and yield. The sacrifice layer etching is conducted in multiple steps. In the multiple steps of the sacrifice layer etching, a part of the sacrifice layer that does not overlap with the structural layer is removed by the earlier sacrifice layer etching and a part of the sacrifice layer that is under the structural layer is removed by the later sacrifice layer etching.
    Type: Grant
    Filed: October 18, 2011
    Date of Patent: January 7, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Mayumi Yamaguchi, Konami Izumi
  • Publication number: 20130307030
    Abstract: To manufacture a micro structure and an electric circuit included in a micro electro mechanical device over the same insulating surface in the same step. In the micro electro mechanical device, an electric circuit including a transistor and a micro structure are integrated over a substrate having an insulating surface. The micro structure includes a structural layer having the same stacked-layer structure as a layered product of a gate insulating layer of the transistor and a semiconductor layer provided over the gate insulating layer. That is, the structural layer includes a layer formed of the same insulating film as the gate insulating layer and a layer formed of the same semiconductor film as the semiconductor layer of the transistor. Further, the micro structure is manufactured by using each of conductive layers used for a gate electrode, a source electrode, and a drain electrode of the transistor as a sacrificial layer.
    Type: Application
    Filed: June 3, 2013
    Publication date: November 21, 2013
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Mayumi Yamaguchi, Konmai Izumi
  • Patent number: 8585775
    Abstract: The present invention provides a higher-performance assist device which is safer by using a wireless charging technique. The assist device includes a detecting portion and an assist device driving portion. The detecting portion includes a sensor, a first transmitting/receiving circuit, a first data processing circuit, a first charging circuit, and a first battery. The assist device driving portion includes a driving portion, a second data processing circuit, a second transmitting/receiving circuit, a second charging circuit, and a second battery. Electromagnetic waves are transmitted from the second transmitting/receiving circuit provided in the assist device driving portion, and the first transmitting/receiving circuit provided in the detecting portion receives the electromagnetic waves.
    Type: Grant
    Filed: February 6, 2008
    Date of Patent: November 19, 2013
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takashi Hirota, Mayumi Yamaguchi, Konami Izumi
  • Publication number: 20130285059
    Abstract: A semiconductor element of the electric circuit includes a semiconductor layer over a gate electrode. The semiconductor layer of the semiconductor element is formed of a layer including polycrystalline silicon which is obtained by crystallizing amorphous silicon by heat treatment or laser irradiation, over a substrate. The obtained layer including polycrystalline silicon is also used for a structure layer such as a movable electrode of a structure body. Therefore, the structure body and the electric circuit for controlling the structure body can be formed over one substrate. As a result, a micromachine can be miniaturized. Further, assembly and packaging are unnecessary, so that manufacturing cost can be reduced.
    Type: Application
    Filed: June 20, 2013
    Publication date: October 31, 2013
    Inventors: Mayumi Yamaguchi, Konami Izumi