Patents by Inventor Mazid MUNSHI

Mazid MUNSHI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10714337
    Abstract: A process for growing nanowires or nanopyramids comprising: (I) providing a graphitic substrate and depositing AlGaN, InGaN, AlN or AlGa(In)N on said graphitic substrate at an elevated temperature to form a buffer layer or nanoscale nucleation islands of said compounds; (II) growing a plurality of semiconducting group III-V nanowires or nanopyramids, preferably III-nitride nanowires or nanopyramids, on the said buffer layer or nucleation islands on the graphitic substrate, preferably via MOVPE or MBE.
    Type: Grant
    Filed: August 1, 2016
    Date of Patent: July 14, 2020
    Assignees: CRAYONANO AS, NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (NTNU)
    Inventors: Dong Chul Kim, Ida Marie Høiaas, Mazid Munshi, Bjørn Ove Fimland, Helge Weman, Dingding Ren, Dasa Dheeraj
  • Publication number: 20200006051
    Abstract: A process for growing nanowires or nanopyramids comprising: (I) providing a graphitic substrate and depositing AlGaN, InGaN, AlN or AlGa(In)N on said graphitic substrate at an elevated temperature to form a buffer layer or nanoscale nucleation islands of said compounds; (II) growing a plurality of semiconducting group III-V nanowires or nanopyramids, preferably III-nitride nanowires or nanopyramids, on the said buffer layer or nucleation islands on the graphitic substrate, preferably via MOVPE or MBE.
    Type: Application
    Filed: June 28, 2019
    Publication date: January 2, 2020
    Inventors: Dong-Chul KIM, Ida Marie HØIAAS, Mazid MUNSHI, Bjørn Ove FIMLAND, Helge WEMAN, Dingding REN, Dasa DHEERAJ
  • Publication number: 20180226242
    Abstract: A process for growing nanowires or nanopyramids comprising: (I) providing a graphitic substrate and depositing AlGaN, InGaN, AlN or AlGa(In)N on said graphitic substrate at an elevated temperature to form a buffer layer or nanoscale nucleation islands of said compounds; (II) growing a plurality of semiconducting group III-V nanowires or nanopyramids, preferably III-nitride nanowires or nanopyramids, on the said buffer layer or nucleation islands on the graphitic substrate, preferably via MOVPE or MBE.
    Type: Application
    Filed: August 1, 2016
    Publication date: August 9, 2018
    Inventors: Dong-Chul KIM, Ida Marie HØIAAS, Mazid MUNSHI, Bjørn Ove FIMLAND, Helge WEMAN, Dingding REN, Dasa DHEERAJ