Patents by Inventor McDonald Robinson
McDonald Robinson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7232487Abstract: A method of making a highly sensitive epitaxial germanium low temperature sensor that is superior in the method of production and performance than those currently available. The geometry and sensitivity of the sensor can be tuned to desired temperature ranges, and specifically can operate at cryogenic temperatures. The sensor can be manufactured uniformly and reproducibly in large quantities at relatively low cost in which large area arrays are possible. The applications of the sensors range from conventional low temperature thermometry and control in laboratory and industrial settings, to applications associated with infrared, x-ray, particle and plasma physics and spectroscopy.Type: GrantFiled: November 9, 2001Date of Patent: June 19, 2007Assignee: Smithsonian Astrophysical ObservatoryInventors: Eric H. Silver, Norman W. Madden, McDonald Robinson, Lamonte H. Lawrence
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Publication number: 20040217845Abstract: A method of making a highly sensitive epitaxial germanium low temperature sensor that is superior in the method of production and performance than those currently available. The geometry and sensitivity of the sensor can be tuned to desired temperature ranges, and specifically can operate at cryogenic temperatures. The sensor can be manufactured uniformly and reproducibly in large quantities at relatively low cost in which large area arrays are possible. The applications of the sensors range from conventional low temperature thermometry and control in laboratory and industrial settings, to applications associated with infrared, x-ray, particle and plasma physics and spectroscopy.Type: ApplicationFiled: November 9, 2001Publication date: November 4, 2004Inventors: Eric H. Silver, Norman W. Madden, McDonald Robinson, Lamonte H. Lawrence
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Patent number: 6770504Abstract: A method for controlling bow in wafers which utilize doped layers is described. The method includes depositing a silicon-germanium layer onto a substrate, depositing an undoped buffer layer onto the silicon-germanium layer, and depositing a silicon-baron layer onto the undoped layer.Type: GrantFiled: January 6, 2003Date of Patent: August 3, 2004Assignee: Honeywell International Inc.Inventors: Robert D. Horning, McDonald Robinson, Timothy Louis Scullard
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Publication number: 20040132227Abstract: A method for controlling bow in wafers which utilize doped layers is described. The method includes depositing a silicon-germanium layer onto a substrate, depositing an undoped buffer layer onto the silicon-germanium layer, and depositing a silicon-boron layer onto the undoped layer.Type: ApplicationFiled: January 6, 2003Publication date: July 8, 2004Inventors: Robert D. Horning, McDonald Robinson, Timothy Louis Scullard
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Publication number: 20020081861Abstract: Silicon-germanium-based compositions comprising silicon, germanium, and carbon (i.e., Si—Ge—C), methods for growing Si—Ge—C epitaxial layer(s) on a substrate, etchants especially suitable for Si—Ge—C etch-stops, and novel methods of use for Si—Ge—C compositions are provided. In particular, the invention relates to Si—Ge—C compositions, especially for use as etch-stops and related processes and etchants useful for microelectronic and nanotechnology fabrication.Type: ApplicationFiled: November 13, 2001Publication date: June 27, 2002Inventors: McDonald Robinson, Richard C. Westhoff, Charles E. Hunt, Li Ling, Ziv Atzmon
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Patent number: 6064081Abstract: Silicon-germanium-based compositions comprising silicon, germanium, and carbon (i.e., Si--Ge--C), methods for growing Si--Ge--C epitaxial layer(s) on a substrate, etchants especially suitable for Si--Ge--C etch-stops, and novel methods of use for Si--Ge--C compositions are provided. In particular, the invention relates to Si--Ge--C compositions, especially for use as etch-stops and related processes and etchants useful for microelectronic and nanotechnology fabrication.Type: GrantFiled: January 15, 1998Date of Patent: May 16, 2000Assignees: Lawrence Semiconductor Research Laboratory, Inc., The Regents of the University of California, The Arizona Board of RegentsInventors: McDonald Robinson, Richard C. Westhoff, Charles E. Hunt, Li Ling, Ziv Atzmon
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Patent number: 5961877Abstract: Silicon-germanium-based compositions comprising silicon, germanium, and carbon (i.e., Si--Ge--C), methods for growing Si--Ge--C epitaxial layer(s) on a substrate, etchants especially suitable for Si--Ge--C etch-stops, and novel methods of use for Si--Ge--C compositions are provided. In particular, the invention relates to Si--Ge--C compositions, especially for use as etch-stops and related processes and etchants useful for microelectronic and nanotechnology fabrication.Type: GrantFiled: December 6, 1995Date of Patent: October 5, 1999Inventors: McDonald Robinson, Richard C. Westhoff, Charles E. Hunt, Li Ling
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Patent number: 5906708Abstract: Silicon-germanium-based compositions comprising silicon, germanium, and carbon (i.e., Si--Ge--C), methods for growing Si--Ge--C epitaxial layer(s) on a substrate, etchants especially suitable for Si--Ge--C etch-stops, and novel methods of use for Si--Ge--C compositions are provided. In particular, the invention relates to Si--Ge--C compositions, especially for use as etch-stops and related processes and etchants useful for microelectronic and nanotechnology fabrication.Type: GrantFiled: December 6, 1995Date of Patent: May 25, 1999Assignee: Lawrence Semiconductor Research Laboratory, Inc.Inventors: McDonald Robinson, Richard C. Westhoff, Charles E. Hunt, Li Ling
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Patent number: 5819684Abstract: The present invention relates to improved injectors for use in CVD reactor systems, and more specifically for use in epitaxial deposition systems for processing a single wafer-at-a-time. The improved injectors of the present invention are used to provide a predetermined desired shaped velocity profile for the injected reactant gases for insuring a more uniform deposition on a single wafer to be processed within the reactor system. In the first embodiment, the reactant gas is fed into a horizontal gas distribution manifold cavity and distributed horizontally in both directions. The gas then passes through a manifold wall having a pattern of predetermined sized and spaced apertures therein. The size of the apertures and the distribution of these sizes, shapes the resultant velocity profile to a desired pattern.Type: GrantFiled: June 10, 1996Date of Patent: October 13, 1998Inventors: Mark R. Hawkins, McDonald Robinson
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Patent number: 5525157Abstract: The present invention relates to improved injectors for use in CVD reactor systems, and more specifically for use in epitaxial deposition systems for processing a single wafer-at-a-time. The improved injectors of the present invention are used to provide a predetermined desired shaped velocity profile for the injected reactant gases for insuring a more uniform deposition on a single wafer to be processed within the reactor system. In the first embodiment, the reactant gas is fed into a horizontal gas distribution manifold cavity and distributed horizontally in both directions. The gas then passes through a manifold wall having a pattern of predetermined sized and spaced apertures therein. The size of the apertures and the distribution of these sizes, shapes the resultant velocity profile to a desired pattern.Type: GrantFiled: August 11, 1995Date of Patent: June 11, 1996Assignee: Advanced Semiconductor Materials America, Inc.Inventors: Mark R. Hawkins, McDonald Robinson
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Patent number: 5458918Abstract: The present invention relates to improved injectors for use in CVD reactor systems, and more specifically for use in epitaxial deposition systems for processing a single wafer-at-a-time. The improved injectors of the present invention are used to provide a predetermined desired shaped velocity profile for the injected reactant gases for insuring a more uniform deposition on a single wafer to be processed within the reactor system. In the first embodiment, the reactant gas is fed into a horizontal gas distribution manifold cavity and distributed horizontally in both directions. The gas then passes through a manifold wall having a pattern of predetermined sized and spaced apertures therein. The size of the apertures and the distribution of these sizes, shapes the resultant velocity profile to a desired pattern.Type: GrantFiled: December 21, 1993Date of Patent: October 17, 1995Assignee: Advanced Semiconductor Materials America, Inc.Inventors: Mark R. Hawkins, McDonald Robinson
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Patent number: 5435682Abstract: This invention discloses a system for chemically depositing various materials carried by a reactant gas onto substrates for manufacturing semiconductor devices. The system includes special loading and unloading sub-systems for placement of substrates to be processed into the system and subsequent extraction without contamination of the system. A special substrate handling sub-system is provided for moving the substrates to and from at least one processing sub-system without physically contacting the planar surfaces of the substrates. The processing sub-system includes a horizontal gas flow reaction chamber having a rotatable susceptor therein for rotating the single substrate supportable thereon about an axis that is normal to the center of the substrate for averaging of the temperature and reactant gas concentration variables.Type: GrantFiled: June 7, 1994Date of Patent: July 25, 1995Assignee: Advanced Semiconductor Materials America, Inc.Inventors: Richard Crabb, McDonald Robinson, Mark R. Hawkins, Dennis L. Goodwin, Armand P. Ferro, Wiebe B. deBoer, Albert E. Ozias
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Patent number: 5411590Abstract: The present invention relates to improved injectors for use in CVD reactor systems, and more specifically for use in epitaxial deposition systems for processing a single wafer-at-a-time. The improved injectors of the present invention are used to provide a predetermined desired shaped velocity profile for the injected reactant gases for insuring a more uniform deposition on a single wafer to be processed within the reactor system. In the first embodiment, the reactant gas is fed into a horizontal gas distribution manifold cavity and distributed horizontally in both directions. The gas then passes through a manifold wall having a pattern of predetermined sized and spaced apertures therein. The size of the apertures and the distribution of these sizes, shapes the resultant velocity profile to a desired pattern.Type: GrantFiled: December 16, 1991Date of Patent: May 2, 1995Assignee: Advanced Semiconductor Materials America, Inc.Inventors: Mark R. Hawkins, McDonald Robinson
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Patent number: 5358926Abstract: Novel articles are provided of thin super-conductive thallium-based copper oxide layers on inorganic, usually crystalline substrates. Novel methods are provided for ease of producing such articles, particularly involving sol-gel techniques and laser ablation. The articles have a highly oriented superconductive thallium-based copper oxide film, particularly epitaxial, with high superconductive transition temperatures and desirable electrical properties. The subject articles find use in a wide variety of electronic applications, particularly in microwave and millimeter wave devices.Type: GrantFiled: July 29, 1993Date of Patent: October 25, 1994Assignee: Superconductor Technologies Inc.Inventors: William L. Olson, Michael M. Eddy, Robert B. Hammond, Timothy W. James, McDonald Robinson
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Patent number: 5324155Abstract: An improved wafer handling system including a pair of robot arms each having a drive apparatus operatively coupled to its rear end portion for extending, retracting, and rotatably positioning the robot arms. The opposite end of the robot arms are operatively connected to a pick-up wand. The pick-up wand includes a top plate and a bottom plate. The lower surface of the top plate has a plurality of commonly-connected grooves ground therein and a reservoir for supplying gas to said grooves from the forward end portion of the robot arms. A plurality of gas outlets are provided in the bottom plate, and the bottom surface of the top plate is positioned securely over and flush against the top surface of the bottom plate such that at least one of the grooves are over each of the plurality of gas outlets for delivering gas thereto.Type: GrantFiled: January 9, 1992Date of Patent: June 28, 1994Assignee: Advanced Semiconductor Materials America, Inc.Inventors: Dennis L. Goodwin, Richard Crabb, McDonald Robinson, Armand P. Ferro
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Patent number: 5221556Abstract: The present invention relates to improved injectors for use in CVD reactor systems, and more specifically for use in epitaxial deposition systems for processing a single water-at-a-time. The improved injectors of the present invention are used to provide a predetermined desired shaped velocity profile for the injected reactant gases for insuring a more uniform deposition on a single wafer to be processed within the reactor system. In the first embodiment, the reactant gas is fed into a horizontal gas distribution manifold cavity and distributed horizontally in both directions. The gas then passes through a manifold wall having a pattern of predetermined sized and spaced apertures therein. The size of the apertures and the distribution of these sizes, shapes the resultant velocity profile to a desired pattern.Type: GrantFiled: June 24, 1987Date of Patent: June 22, 1993Assignee: Epsilon Technology, Inc.Inventors: Mark R. Hawkins, McDonald Robinson
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Patent number: 5156521Abstract: A method for loading a substrate into a receiving chamber upon a positionable platform, which platform is in sealed relationship with the receiving chamber, permits purging of the receiving chamber prior to transport of the loaded substrate(s) to a feed chamber. The platform is positioned from the receiving chamber into the feed chamber to off load the substrates. A cassette containing a plurality of stacked substrates may be loaded upon the platform to transport a plurality of substrates into the feed chamber.Type: GrantFiled: June 25, 1991Date of Patent: October 20, 1992Assignee: Epsilon Technology, Inc.Inventors: Richard Crabb, McDonald Robinson, Mark R. Hawkins, Dennis L. Goodwin, Armand P. Ferro
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Patent number: 5092728Abstract: Each substrate is loaded into a receiving chamber upon a positionable platform, which platform is in sealed relationship with the receiving chamber to permit purging of the receiving chamber prior to transport of the loaded substrate(s) to a feed chamber. The platform is positioned from the receiving chamber into the feed chamber wherefrom the substrates are off loaded. A cassette containing a plurality of stacked substrates may be loaded upon the platform to transport a plurality of substrates into the feed chamber.Type: GrantFiled: February 24, 1989Date of Patent: March 3, 1992Assignee: Epsilon Technology, Inc.Inventors: Richard Crabb, McDonald Robinson, Mark R. Hawkins, Dennis L. Goodwin, Armand P. Ferro, Wiebe B. deBoer, Albert E. Ozias
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Patent number: 5080549Abstract: Wafer handling apparatus operating under the Bernoulli principle to pick up, transport and deposit wafers, which apparatus includes a plate having a plurality of laterally oriented outlets and a central outlet for discharging gas in a pattern sufficient to develop a low pressure enviroment to pick up the wafer while bathing the wafer in radially outflowing gases to prevent intrusion and deposition on the wafer of particulate matter in suspension.Type: GrantFiled: July 2, 1990Date of Patent: January 14, 1992Assignee: Epsilon Technology, Inc.Inventors: Dennis L. Goodwin, Richard Crabb, McDonald Robinson, Armand P. Ferro
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Patent number: 5071830Abstract: An epitaxial thallium-based copper oxide superconducting film is formed on a crystalline substrate by metalorganic deposition which comprises forming a film of carboxylate soap solution on said substrate, prepyrolyzing said film at a temperature of 350.degree. C. or less and pyrolyzing said film at a temperature of 800.degree.900.degree. C. in the presence of oxygen and an overpressure of thallium for a sufficient time to produce said epitaxial superconducting film.Type: GrantFiled: August 31, 1988Date of Patent: December 10, 1991Assignee: Superconductor Technologies, Inc.Inventors: William L. Olson, Michael M. Eddy, Robert B. Hammond, Timothy W. James, McDonald Robinson