Abstract: An apparatus for calibrating an eye tracking system of a head mounted display displays a moving object in a scene visible through the head mounted display. The object is displayed progressively at a plurality of different points (P) at corresponding different times (T). While the object is at a first point of the plurality of different points in time, the apparatus determines whether an offset between the point P and an eye gaze point (E) satisfies a threshold. The eye-gaze point (E) corresponds to a point where a user is determined to be gazing by the eye tracking system. If the threshold is not satisfied, the apparatus performs a calibration of the eye tracking system when the object is at a second point of the plurality of different points in time. The apparatus then repeats the determining step when the object is at a third point of the plurality of different points in time.

Abstract: A method, an apparatus, and a computer program product provide feedback to a user of an augmented reality (AR) device having an optical see-through head mounted display (HMD). The apparatus obtains a location on the HMD corresponding to a user interaction with an object displayed on the HMD. The object may be an icon on the HMD and the user interaction may be an attempt by the user to select the icon through an eye gaze or gesture. The apparatus determines whether a spatial relationship between the location of user interaction and the object satisfies a criterion, and outputs a sensory indication, e.g., visual display, sound, vibration, when the criterion is satisfied. The apparatus may be configured to output a sensory indication when user interaction is successful, e.g., the icon was selected. Alternatively, the apparatus may be configured to output a sensory indication when the user interaction fails.

Abstract: An apparatus for calibrating an augmented reality (AR) device having an optical see-through head mounted display (HMD) obtains eye coordinates in an eye coordinate system corresponding to a location of an eye of a user of the AR device, and obtains object coordinates in a world coordinate system corresponding to a location of a real-world object in the field of view of the AR device, as captured by a scene camera having a scene camera coordinate system. The apparatus calculates screen coordinates in a screen coordinate system corresponding to a display point on the HMD, where the calculating is based on the obtained eye coordinates and the obtained object coordinates. The apparatus calculates calibration data based on the screen coordinates, the object coordinates and a transformation from the target coordinate system to the scene camera coordinate system. The apparatus then derives subsequent screen coordinates for the display of AR in relation to other real-world object points based on the calibration data.

Abstract: Disclosed are methods for modifying the topography of HDP CVD films by modifying the composition of the reactive mixture. The methods allow for deposition profile control independent of film deposition rate. They rely on changes in the process chemistry of the HDP CVD system, rather than hardware modifications, to modify the local deposition rates on the wafer. The invention provides methods of modifying the film profile by altering the composition of the reactive gas mixture, in particular the hydrogen content. In this manner, deposition profile and wiw uniformity are decoupled from deposition rate, and can be controlled without hardware modifications.

Abstract: Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.15 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of hydrogen as a process gas in the reactive mixture of a plasma containing CVD reactor. The process gas also includes dielectric forming precursor molecules such as silicon and oxygen containing molecules.

Abstract: Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.13 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of hydrogen and a phosphorus dopant precursor as process gasses in the reactive mixture of a plasma containing CVD reactor. The process gas also includes dielectric forming precursor molecules such as silicon and oxygen containing molecules.

Abstract: Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.15 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of hydrogen as a process gas in the reactive mixture of a plasma containing CVD reactor. The process gas also includes dielectric forming precursor molecules such as silicon and oxygen containing molecules.

Abstract: Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.15 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of hydrogen as a process gas in the reactive mixture of a plasma containing CVD reactor. The process gas also includes dielectric forming precursor molecules such as silicon and oxygen containing molecules.