Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a stacked structure, a semiconductor pillar, a memory layer and an outer insulating film. The stacked structure includes a plurality of electrode films and a plurality of interelectrode insulating films alternately stacked in a first direction. The semiconductor pillar pierces the stacked structure in the first direction. The memory layer is provided between the electrode films and the semiconductor pillar. The outer insulating film is provided between the electrode films and the memory layer. The device includes a first region and a second region. An outer diameter of the outer insulating film along a second direction perpendicular to the first direction in the first region is larger than that in the second region. A thickness of the outer insulating film along the second direction in the first region is thicker than that in the second region.

Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes: a first stacked body; a memory film; a first channel body layer provided inside the memory film; an interlayer insulating film provided on the first stacked body; a second stacked body having a select gate electrode layer, and a second insulating layer; a gate insulating film provided on a side wall of a second hole communicating with the first hole and penetrating the second stacked body and the interlayer insulating film in a stacking direction of the second stacked body; and a second channel body layer provided inside the gate insulating film in the second hole. A first pore diameter of the second hole at an upper end of the select gate electrode layer is smaller than a second pore diameter of the second hole at an lower end of the select gate electrode layer.

Abstract: According to one embodiment, a semiconductor device includes a substrate, a first stacked body, a memory film, a first channel body, a second stacked body, a gate insulating film and a second channel body. A step part is formed between a side face of the select gate and the second insulating layer. A film thickness of a portion covering the step part of the second channel body is thicker than a film thickness of a portion provided between the second insulating layers of the second channel body.

Abstract: A nonvolatile semiconductor memory device includes: a semiconductor substrate; a stacked body provided on the semiconductor substrate, the stacked body having electrode films and insulating films being alternately stacked; a first and second semiconductor pillars; and a first and second charge storage layers. The first and second semiconductor pillars are provided inside a through hole penetrating through the stacked body in a stacking direction of the stacked body. The through hole has a cross section of an oblate circle, when cutting in a direction perpendicular to the stacking direction. The first and second semiconductor pillars face each other in a major axis direction of the first oblate circle. The first and second semiconductor pillars extend in the stacking direction. The first and second charge storage layers are provided between the electrode film and the first and second semiconductor pillars, respectively.

Abstract: A non-volatile semiconductor storage device includes a plurality of memory strings each having a plurality of electrically rewritable memory cells connected in series. Each of the memory strings comprising: a first semiconductor layer including a columnar portion extending in a vertical direction with respect to a substrate; a plurality of first conductive layers formed to surround side surfaces of the columnar portions via insulation layers, and formed at a certain pitch in the vertical direction, the first conductive layers functioning as floating gates of the memory cells; and a plurality of second conductive layers formed to surround the first conductive layers via insulation layers, and functioning as control electrodes of the memory cells. Each of the first conductive layers has a length in the vertical direction that is shorter than a length in the vertical direction of each of the second conductive layers.

Abstract: A non-volatile semiconductor storage device has a plurality of memory strings to each of which a plurality of electrically rewritable memory cells are connected in series. Each of the memory strings includes first semiconductor layers each having a pair of columnar portions extending in a vertical direction with respect to a substrate and a coupling portion formed to couple the lower ends of the pair of columnar portions; a charge storage layer formed to surround the side surfaces of the columnar portions; and first conductive layers formed to surround the side surfaces of the columnar portions and the charge storage layer. The first conductive layers function as gate electrodes of the memory cells.

Abstract: A nonvolatile semiconductor memory device, includes: a stacked structural unit including a plurality of insulating films alternately stacked with a plurality of electrode films in a first direction; a selection gate electrode stacked on the stacked structural unit in the first direction; an insulating layer stacked on the selection gate electrode in the first direction; a first semiconductor pillar piercing the stacked structural unit, the selection gate electrode, and the insulating layer in the first direction, a first cross section of the first semiconductor pillar having an annular configuration, the first cross section being cut in a plane orthogonal to the first direction; a first core unit buried in an inner side of the first semiconductor pillar, the first core unit being recessed from an upper face of the insulating layer; and a first conducting layer of the first semiconductor pillar provided on the first core unit to contact the first core unit.

Abstract: According to one embodiment, a method for manufacturing a nonvolatile semiconductor storage device includes; forming a first and a second stacked bodies; forming a through hole penetrating through the first stacked body, a second portion communicating with the first portion and penetrating through a select gate, and a third portion communicating with the second portion and penetrating through a second insulating layer; forming a memory film, a gate insulating film, and a channel body; forming a third insulating layer inside the channel body; forming a first embedded portion above a boundary portion inside the third portion; exposing the channel body by removing part of the first embedded portion and part of the third insulating layer in the third portion; and embedding a second embedded portion including silicon having higher impurity concentration than the first embedded portion above the first embedded portion inside the third portion.

Abstract: A nonvolatile semiconductor memory device includes: a stacked body in which insulating films and electrode films are alternately stacked; selection gate electrodes provided on the stacked body; bit lines provided on the selection gate electrodes; semiconductor pillars; connective members separated from one another; and a charge storage layer provided between the electrode film and the semiconductor pillar. One of the connective members is connected between a lower part of one of the semiconductor pillars and a lower part of another of the semiconductor pillars. The one of the semiconductor pillars passes through one of the selection gate electrodes and is connected to one of the bit lines, and the another of the semiconductor pillars passes through another of the selection gate electrodes and is connected to another of the bit lines.

Abstract: A nonvolatile semiconductor memory device includes a memory unit and a control unit. The memory unit includes a multilayer structure including electrode films and inter-electrode insulating films alternately stacked in a first direction; a semiconductor pillar piercing the multilayer structure in the first direction; a memory layer provided between the semiconductor pillar and the electrode films; an inner insulating film provided between the memory layer and the semiconductor pillar; an outer insulating film provided between the memory layer and the electrode films; and a wiring electrically connected to the first semiconductor pillar. In an erasing operation, the control unit sets the first wiring at a first potential and sets the electrode film at a second potential lower than the first potential, and then sets the first wiring at a third potential and sets the electrode film at a fourth potential higher than the third potential.

Abstract: A nonvolatile semiconductor memory device, includes: a stacked structural unit including a plurality of insulating films alternately stacked with a plurality of electrode films in a first direction; a selection gate electrode stacked on the stacked structural unit in the first direction; an insulating layer stacked on the selection gate electrode in the first direction; a first semiconductor pillar piercing the stacked structural unit, the selection gate electrode, and the insulating layer in the first direction, a first cross section of the first semiconductor pillar having an annular configuration, the first cross section being cut in a plane orthogonal to the first direction; a first core unit buried in an inner side of the first semiconductor pillar, the first core unit being recessed from an upper face of the insulating layer; and a first conducting layer of the first semiconductor pillar provided on the first core unit to contact the first core unit.

Abstract: According to one embodiment, a semiconductor device includes a substrate, a first stacked body, a memory film, a first channel body, a second stacked body, a gate insulating film and a second channel body. A step part is formed between a side face of the select gate and the second insulating layer. A film thickness of a portion covering the step part of the second channel body is thicker than a film thickness of a portion provided between the second insulating layers of the second channel body.

Abstract: According to one embodiment, a method is disclosed for manufacturing a semiconductor device. The second insulating film seals the hole near an interface of the insulating layer and the select gate. The second insulating film is provided on a side wall of the channel body with a space left in the hole above the select gate. The method can include burying a semiconductor film in the space, in addition, forming a conductive film in contact with the channel body.

Abstract: According to one embodiment, a semiconductor device includes a substrate, a first stacked body, a memory film, a first channel body, a second stacked body, a gate insulating film and a second channel body. A step part is formed between a side face of the select gate and the second insulating layer. A film thickness of a portion covering the step part of the second channel body is thicker than a film thickness of a portion provided between the second insulating layers of the second channel body.

Abstract: A nonvolatile semiconductor memory device includes a plurality of memory strings, each of which has a plurality of electrically rewritable memory cells connected in series; and select transistors, one of which is connected to each of ends of each of the memory strings. Each of the memory strings is provided with a first semiconductor layer having a pair of columnar portions extending in a perpendicular direction with respect to a substrate, and a joining portion formed so as to join lower ends of the pair of columnar portions; a charge storage layer formed so as to surround a side surface of the columnar portions; and a first conductive layer formed so as to surround the side surface of the columnar portions and the charge storage layer, and configured to function as a control electrode of the memory cells.

Abstract: A nonvolatile semiconductor memory device, includes: a stacked structural unit including a plurality of stacked component units stacked in a first direction, each of the stacked component units including a first conducting film made of a semiconductor of a first conductivity type provided perpendicular to the first direction and a first insulating film stacked in the first direction with the first conducting film; a semiconductor pillar piercing the stacked structural unit in the first direction and including a conducting region of a second conductivity type, the semiconductor pillar including a first region opposing each of the first conducting films, and a second region provided between the first regions with respect to the first direction, the second region having a resistance different from a resistance of the first region; and a second insulating film provided between the semiconductor pillar and the first conducting film.

Abstract: A nonvolatile semiconductor memory device includes: a semiconductor substrate; a stacked body provided on the semiconductor substrate, the stacked body having electrode films and insulating films being alternately stacked; a first and second semiconductor pillars; and a first and second charge storage layers. The first and second semiconductor pillars are provided inside a through hole penetrating through the stacked body in a stacking direction of the stacked body. The through hole has a cross section of an oblate circle, when cutting in a direction perpendicular to the stacking direction. The first and second semiconductor pillars face each other in a major axis direction of the first oblate circle. The first and second semiconductor pillars extend in the stacking direction. The first and second charge storage layers are provided between the electrode film and the first and second semiconductor pillars, respectively.

Abstract: According to one embodiment, a semiconductor memory device includes a multilayer body, a second electrode film provided on the multilayer body, a second insulating film provided on the second electrode film, a semiconductor film, a memory film and a gate insulating film. At boundary between the inner surface of the second through hole and the inner surface of the third through hole, or on the inner surface of the second through hole, a step difference is formed so that an upper side from the step difference is thicker than a lower side from the step difference.

Abstract: A nonvolatile semiconductor memory device includes: forming a stacked body by alternately stacking a plurality of interlayer insulating films and a plurality of control gate electrodes; forming a through-hole extending in a stacking direction in the stacked body; etching a portion of the interlayer insulating film facing the through-hole via the through-hole to remove the portion; forming a removed portion; forming a first insulating film on inner faces of the through-hole and the portion in which the interlayer insulating films are removed; forming a floating gate electrode in the portion in which the interlayer insulating films are removed; forming a second insulating film so as to cover a portion of the floating gate electrode facing the through-hole; and burying a semiconductor pillar in the through-hole.

Abstract: A nonvolatile semiconductor memory device includes: a semiconductor substrate; a stacked body provided on the semiconductor substrate, the stacked body having electrode films and insulating films being alternately stacked; a first and second semiconductor pillars; and a first and second charge storage layers. The first and second semiconductor pillars are provided inside a through hole penetrating through the stacked body in a stacking direction of the stacked body. The through hole has a cross section of an oblate circle, when cutting in a direction perpendicular to the stacking direction. The first and second semiconductor pillars face each other in a major axis direction of the first oblate circle. The first and second semiconductor pillars extend in the stacking direction. The first and second charge storage layers are provided between the electrode film and the first and second semiconductor pillars, respectively.