Abstract: Disclosed herein are apparatus for a cooler device includes a manifold constructed at least partially of silicon oxide. The manifold includes an array of inlet channels and an array of outlet channels. Each inlet channel has a first depth. The array of outlet channels are interlaced with the array of inlet channels, Each outlet channel has a second depth that is larger than the first depth. Each of the array of outlet channels has a pair of sidewalls separating each outlet channel from adjacent inlet channels of the array of inlet channels.

Abstract: Improved vapor chambers are provided using monolithic wick structures having deep features (?150 um) and two or more different feature heights above the substrate. Such monolithic multi-level wick structures provide improved performance in vapor chambers by alleviating the tradeoff between fluid transport (which favors tall pin-fins) and heat transfer (which favors short pin-fins).

Abstract: Improved microchannel structures are provided using monolithic structures having deep features (?150 um) and two or more different feature heights above the substrate. Exemplary channel structures that are enabled by this approach include step-tapered V-groove channels, channels having various kinds of lithographically define roughness, and channels having an arbitrarily defined depth along their length.

Abstract: A cooler device includes a cold plate and a manifold with fluid wicking structure. The cold plate includes an array of bonding posts and an array of fluid channels. Each bonding post of the array of bonding posts has a first height and is in contact with the manifold with fluid wicking structure. Each fluid channel of the array of fluid channels has a second height that is less than the first height. The array of fluid channels include a MIO secondary wick structure. The array of bonding posts is orthogonal to the array of fluid channels. The manifold with fluid wicking structure includes a plurality of spacer elements and a plurality of mesh layers. Each one of the plurality of spacer elements alternate with each one of the plurality of mesh layers in a stacked arrangement.

Abstract: A cooler device includes a cold plate and a manifold with fluid wicking structure. The cold plate includes an array of bonding posts and an array of fluid channels. Each bonding post of the array of bonding posts has a first height and is in contact with the manifold with fluid wicking structure. Each fluid channel of the array of fluid channels has a second height that is less than the first height. The array of fluid channels include a MIO secondary wick structure. The array of bonding posts is orthogonal to the array of fluid channels. The manifold with fluid wicking structure includes a plurality of spacer elements and a plurality of mesh layers. Each one of the plurality of spacer elements alternate with each one of the plurality of mesh layers in a stacked arrangement.

Abstract: We provide a novel cleanroom-based process flow that allows for easy creation of multi-level, hierarchical 3D structures in a substrate. This is achieved by introducing an ultra-thin sacrificial hardmask layer on the substrate which is first 3D patterned via multiple rounds of lithography. This 3D pattern is then scaled vertically by a factor of 200 - 300 and transferred to the substrate underneath via a single shot deep etching step. This method is also easily characterizable - using features of different topographies and dimensions, the etch rates and selectivities were quantified; this characterization information was later used while fabricating specific target structures.

Abstract: A charging cable apparatus having a connector, an electrically-conductive cable extending from the connector, the cable configured to be connectable to a charging station for receiving a charging current from the charging station, and having a heat pipe with a phase change section having a wicking structure, the wicking structure having a working fluid therein during operation for receiving heat generated during current flow within the cable. The charging cable apparatus may further have an external condensing surface in fluid communication with the phase change section of the heat pipe for accelerating condensation of evaporated working fluid. The charging cable apparatus may be connected to a charging station for charging an electric battery such as a battery of an electric vehicle.

Abstract: A first aspect of this work relates to water harvesting in power plants. A water adsorbent material is driven through adsorption-desorption cycles using waste heat from a power plant to harvest water from ambient air. In a preferred embodiment, metal-organic-framework (MOF) powders are used as the water adsorbent material for this application. A second aspect of this work relates more generally to rapid adsorption-desorption cycling of MOFs for various applications.

Abstract: A low-power phase-change memory (PCM) technology with interfacial thermoelectric heating (TEH) enhancement is provided. Embodiments described herein leverage a substantial, positive thermoelectric coefficient in PCM materials to generate additional heating or cooling at an interface with another material, enabling memory switching with a large reduction in current and power. Interfacial thermoelectric engineering is applied to a PCM cell using a special class of thermoelectric materials with large negative Seebeck coefficients (e.g., bismuth telluride (Bi2Te3), lead telluride (PbTe), lanthanum telluride (La3Te4), indium selenide (InSe), silicon-germanium (Si0.8Ge0.2)) to induce efficient heating at significantly lowered power and current.

Abstract: A charging cable apparatus having a connector, an electrically-conductive cable extending from the connector, the cable configured to be connectable to a charging station for receiving a charging current from the charging station, and having a heat pipe with a phase change section having a wicking structure, the wicking structure having a working fluid therein during operation for receiving heat generated during current flow within the cable. The charging cable apparatus may further have an external condensing surface in fluid communication with the phase change section of the heat pipe for accelerating condensation of evaporated working fluid. The charging cable apparatus may be connected to a charging station for charging an electric battery such as a battery of an electric vehicle.

Abstract: A heat sink apparatus having a pair of casings hinged in a clamshell arrangement and configured to contain a portion of an electric charging cable, the casings each having an inner space which contains a phase change material for absorbing heat generated during current flow through the electric charging cable.

Abstract: A method of etching features in a silicon wafer includes coating a top surface and a bottom surface of the silicon wafer with a mask layer having a lower etch rate than an etch rate of the silicon wafer, removing one or more portions of the mask layer to form a mask pattern in the mask layer on the top surface and the bottom surface of the silicon wafer, etching one or more top surface features into the top surface of the silicon wafer through the mask pattern to a depth plane located between the top surface and the bottom surface of the silicon wafer at a depth from the top surface, coating the top surface and the one or more top surface features with a metallic coating, and etching one or more bottom surface features into the bottom surface of the silicon wafer through the mask pattern to the target depth plane.

Abstract: A method of etching features in a silicon wafer includes coating a top surface and a bottom surface of the silicon wafer with a mask layer having a lower etch rate than an etch rate of the silicon wafer, removing one or more portions of the mask layer to form a mask pattern in the mask layer on the top surface and the bottom surface of the silicon wafer, etching one or more top surface features into the top surface of the silicon wafer through the mask pattern to a depth plane located between the top surface and the bottom surface of the silicon wafer at a depth from the top surface, coating the top surface and the one or more top surface features with a metallic coating, and etching one or more bottom surface features into the bottom surface of the silicon wafer through the mask pattern to the target depth plane.

Abstract: A method of etching features in a silicon wafer includes coating a top surface and a bottom surface of the silicon wafer with a mask layer having a lower etch rate than an etch rate of the silicon wafer, removing one or more portions of the mask layer to form a mask pattern in the mask layer on the top surface and the bottom surface of the silicon wafer, etching one or more top surface features into the top surface of the silicon wafer through the mask pattern to a depth plane located between the top surface and the bottom surface of the silicon wafer at a depth from the top surface, coating the top surface and the one or more top surface features with a metallic coating, and etching one or more bottom surface features into the bottom surface of the silicon wafer through the mask pattern to the target depth plane.

Abstract: A method of etching features in a silicon wafer includes coating a top surface and a bottom surface of the silicon wafer with a mask layer having a lower etch rate than an etch rate of the silicon wafer, removing one or more portions of the mask layer to form a mask pattern in the mask layer on the top surface and the bottom surface of the silicon wafer, etching one or more top surface features into the top surface of the silicon wafer through the mask pattern to a depth plane located between the top surface and the bottom surface of the silicon wafer at a depth from the top surface, coating the top surface and the one or more top surface features with a metallic coating, and etching one or more bottom surface features into the bottom surface of the silicon wafer through the mask pattern to the target depth plane.

Abstract: Embodiments of an evaporator chamber heat flux rectifier and thermal switch are provided. Some embodiments include an evaporator layer with a first thermally conductive surface, a wicking structure for facilitating evaporation of a fluid in the vapor chamber heat flux rectifier, and a condenser layer that includes a second thermally conductive surface. Some embodiments include a middle layer, where when heat is applied to the first thermally conductive surface, the vapor chamber heat flux rectifier operates as a thermal conductor. Some embodiments that operate as a thermal switch include a non-condensable gas reservoir that is coupled to the condenser layer. The non-condensable gas reservoir may store a non-condensable gas when a threshold heat flux is applied to the evaporator layer. The non-condensable gas provides thermal insulation between the evaporator layer and the condenser layer when the threshold heat flux is not applied to the evaporator layer.

Abstract: Embodiments of an evaporator chamber heat flux rectifier and thermal switch are provided. Some embodiments include an evaporator layer with a first thermally conductive surface, a wicking structure for facilitating evaporation of a fluid in the vapor chamber heat flux rectifier, and a condenser layer that includes a second thermally conductive surface. Some embodiments include a middle layer, where when heat is applied to the first thermally conductive surface, the vapor chamber heat flux rectifier operates as a thermal conductor. Some embodiments that operate as a thermal switch include a non-condensable gas reservoir that is coupled to the condenser layer. The non-condensable gas reservoir may store a non-condensable gas when a threshold heat flux is applied to the evaporator layer. The non-condensable gas provides thermal insulation between the evaporator layer and the condenser layer when the threshold heat flux is not applied to the evaporator layer.

Abstract: Provided is a phase change memory device including a graphene layer inserted between a lower electrode into which heat flows and a phase change material layer, to prevent the heat from being diffused to an outside so as to efficiently transfer the heat to the phase change material layer, and a method of fabricating the phase change memory device. The phase change memory device includes a lower electrode; an insulating layer formed to enclose the lower electrode; a graphene layer formed on the lower electrode; a phase change material layer formed on the graphene layer and the insulating layer; and an upper electrode formed on the phase change material layer. Since a phase of the phase change material layer is changed at a small amount of driving current, the phase change memory device is fabricated to have a high driving speed and a high integration.

Abstract: Provided is a phase change memory device including a graphene layer inserted between a lower electrode into which heat flows and a phase change material layer, to prevent the heat from being diffused to an outside so as to efficiently transfer the heat to the phase change material layer, and a method of fabricating the phase change memory device. The phase change memory device includes a lower electrode; an insulating layer formed to enclose the lower electrode; a graphene layer formed on the lower electrode; a phase change material layer formed on the graphene layer and the insulating layer; and an upper electrode formed on the phase change material layer. Since a phase of the phase change material layer is changed at a small amount of driving current, the phase change memory device is fabricated to have a high driving speed and a high integration.

Abstract: A multilayer-stacked phase change memory (PCM) device is provided that includes a substrate that is electrically insulative and thermally conductive, a number (n) of PCM layers deposited on the substrate, where each PCM layer is thicker than a previous PCM layer, a number (n?1) layers of passivation layer deposited between the PCM layers, where the (n) PCM layers, and the (n?1) passivation layers form a stacked multi-layer PCM on the substrate, a first electrode deposited on a first side of the multi-layer PCM stack, and a second electrode deposited on a second side of the multi-layer PCM stack, where the first side is opposite the second side, where charge transport is decoupled by stacking the PCM layers with the pasivation layers.