Abstract: Methods for detecting areas of localized tilt on a sample using imaging reflectometry measurements include obtaining a first image without blocking any light reflected from the sample and obtaining a second image while blocking some light reflected from the sample at the aperture plane. The areas of localized tilt are detected by comparing first reflectance intensity values of pixels in the first image with second reflectance intensity values of corresponding pixels in the second image.

Abstract: Embodiments of the disclosure include a method for forming a device comprising generating an image of a second die that is bonded on a first die that is bonded on a base substrate, the first die having a first feature formed on a first surface of the first die and the second die having a second feature formed on a second surface of the second die, determining a relative displacement between portions of the first feature and the second feature based on the generated image, and determining updated alignment instructions based on the determined relative displacement

Abstract: A method includes identifying a first growth rate of a first region of a substrate associated with one or more substrate deposition processes performed in a processing chamber of substrate processing equipment. The method further includes determining, based on the first growth rate, thickness data of a second region of the substrate without second structure data of the second region. The thickness data is determined in a non-destructive manner. The method further includes causing performance of an action associated with processing one or more substrates via the processing chamber of the substrate processing equipment based on the thickness data of the second region of the substrate.

Abstract: Implementations disclosed describe, among other things, a system and a method of scanning a substrate with a beam of light and detecting for each of a set of locations of the substrate, a respective one of a set of intensity values associated with a beam of light reflected from (or transmitted through) the substrate. The detected intensity values are used to determine a profile of a thickness of the substrate.

Abstract: An optical inspection system for pre-bonding inspection system includes a stage on which a sample to be inspected is placed, a sensor, optical assemblies, each including an optical head having optics to direct a sample field-of-view (FOV) to a portion of the sample, a first light source configured to illuminate the sample at a first oblique angle, a second light source configured to illuminate the sample at a second oblique angle, a focusing lens to focus a first optical image of the portion of the sample generated by the first light source, and a second optical image of the portion of the sample generated by the second light source onto a segment of the sensor, and a controller configured to combine the first optical image and the second optical image generated by each optical assembly, and generate a map of point defects on the sample.

Abstract: An optical inspection system for pre-bonding inspection includes a stage having a surface on which a sample to be inspected is placed, the surface of the sample having at least parts with a two dimensional (2D) periodic pattern which may include defects, an optical head including optics, a dark-field illuminator configured to illuminate the surface of the sample at an first angle, wherein the first angle is an oblique angle, a bright-field illuminator configured to illuminate the surface at a second angle, a dark-field collection path, a bright-field collection path, and a sensor configured to detect light transmitted from the dark-field illuminator, scattered at the surface of the sample, collected by the optical head, and relayed through the dark-field collection path, and light transmitted from the bright-field illuminator, reflected at the surface of the sample, and relayed through the bright-field collection path.

Abstract: A scanning inspection apparatus detects anomalies on surfaces of objects such as substrates, substrates with bonded chiplets, and carriers with singulated chiplets and the like. In some embodiments, the inspection apparatus includes a time delay integrated (TDI) linear sensor with an optical input and a data output where more than one optical assembly is positioned adjacent to each other with an optical output focused on a different segment of the TDI linear sensor and with an optical input positioned to receive a portion of a surface under examination. The apparatus may further include a platform with an upper surface for supporting an object with the surface under examination and with a motion assembly to move the platform and with a controller in communication with the motion assembly to move the platform in relation to the optical input of the optical assembly.

Abstract: Methods and apparatus for detecting metrology data are provided herein. For example, an apparatus comprises a substrate support configured to support a substrate and another substrate disposed on the substrate, an incoherent light source configured to transmit an illumination beam through the substrate and the another substrate, a set of optics configured to direct the illumination beam when transmitted through the substrate and the another substrate, an actuator operably coupled to the substrate support and configured to move the substrate and another substrate back and forth in a scanning pattern, and a sensor operably coupled to the actuator, synchronized therewith, and configured to receive the illumination beam from the set of optics to obtain subsurface images of the substrate and the another substrate.

Abstract: A method includes identifying first structure data of a first region of a substrate and receiving optical metrology data of the substrate associated with one or more substrate deposition processes in a processing chamber. The method further includes determining, based on the optical metrology data and the first structure data, a first growth rate of the first region of the substrate associated with the one or more substrate deposition processes. The method further includes predicting, based on the optical metrology data and the first growth rate, thickness data of a second region of the substrate without second structure data of the second region.

Abstract: Disclosed systems and techniques are directed to interferometry-based sample thickness metrology in manufacturing systems. For example, the disclosed techniques include directing a focused beam to a plurality of locations of a sample and detecting an interference pattern (IP) associated with a light departing from the respective location and generated upon interaction of the focused beam with the sample. The techniques further include determining, based on a first IP associated with a first light departing from a first location and a second IP associated with a second light departing from a second location, a magnitude and a sign of a difference between a first thickness of the sample at the first location and a second thickness of the sample at the second location.

Abstract: Methods and apparatus of hybrid bonding with inspection are provided herein. In some embodiments, a method of hybrid bonding with inspection includes: cleaning a substrate via a first cleaning chamber and a tape frame having a plurality of chiplets via a second cleaning chamber; inspecting, via a first metrology system, the substrate for pre-bond defects in a first metrology chamber and the tape frame for pre-bond defects in a second metrology chamber; bonding one or more of the plurality of chiplets to the substrate via a hybrid bonding process in a bonder chamber to form a bonded substrate; and performing, via a second metrology system different than the first metrology system, a post-bond inspection of the bonded substrate via a third metrology chamber for post-bond defects.

Abstract: A system includes a radiation source configured to emit a radiation beam. The system further includes a first optical sensor configured to detect a first intensity of a first portion of the radiation beam reflected from a surface of an object. The system further includes a second optical sensor configured to detect a second intensity of a second portion of the radiation beam scattered by the surface of the object. The system further includes a processing device communicatively coupled to the first optical sensor and the second optical sensor. The processing device is configured to determine at least one of a roughness or an emissivity of the surface of the object based on a comparison of the first intensity and the second intensity.

Abstract: Implementations disclosed describe a system that includes a deposition chamber, a light source to produce an incident beam of light, wherein the incident beam of light is to illuminate a region of the deposition chamber, and a camera to collect a scattered light originating from the illuminated region of the deposition chamber, wherein the scattered light is to be produced upon interaction of the first incident beam of light with particles inside the illuminated region of the deposition chamber. The described system may optionally have a processing device, coupled to the camera, to generate scattering data for a plurality of locations of the illuminated region, wherein the scattering data for each location comprises intensity of the scattered light originating from this location.

Abstract: Methods and apparatus for detecting metrology data are provided herein. For example, an apparatus comprises a substrate support configured to support a substrate and another substrate disposed on the substrate, an incoherent light source configured to transmit an illumination beam through the substrate and the another substrate, a set of optics configured to direct the illumination beam when transmitted through the substrate and the another substrate, an actuator operably coupled to the substrate support and configured to move the substrate and another substrate back and forth in a scanning pattern, and a sensor operably coupled to the actuator, synchronized therewith, and configured to receive the illumination beam from the set of optics to obtain subsurface images of the substrate and the another substrate.

Abstract: Implementations disclosed describe a system that includes a deposition chamber, a light source to produce an incident beam of light, wherein the incident beam of light is to illuminate a region of the deposition chamber, and a camera to collect a scattered light originating from the illuminated region of the deposition chamber, wherein the scattered light is to be produced upon interaction of the first incident beam of light with particles inside the illuminated region of the deposition chamber. The described system may optionally have a processing device, coupled to the camera, to generate scattering data for a plurality of locations of the illuminated region, wherein the scattering data for each location comprises intensity of the scattered light originating from this location.

Abstract: An apparatus for detecting metrology data in semiconductor packaging processes using fast focus and acquisition techniques to determine alignment metrology data for hybrid bonding. In some embodiments, the apparatus may include a source configured to illuminate a focal point with a wavelength selected from wavelengths greater than 1100 nm, an optical lens that forms an illumination beam when illuminated by the source, an acousto-optic scanner that moves the illumination beam back and forth in a scanning pattern, a splitter to allow the illumination beam to be directed at a metrology sampling location while allowing a reflection beam caused by the illumination beam to pass through the splitter to a detector, a set of optics configured to focus the illumination beam at one or more focal points in a Z direction to obtain subsurface images, and a substrate platform configured to hold a substrate and to move the substrate during scanning.

Abstract: A system includes a radiation source configured to emit a radiation beam. The system further includes a first optical sensor configured to detect a first intensity of a first portion of the radiation beam reflected from a surface of an object. The system further includes a second optical sensor configured to detect a second intensity of a second portion of the radiation beam scattered by the surface of the object. The system further includes a processing device communicatively coupled to the first optical sensor and the second optical sensor. The processing device is configured to determine at least one of a roughness or an emissivity of the surface of the object based on a comparison of the first intensity and the second intensity.

Abstract: Methods and systems for monitoring etch or deposition processes using image-based in-situ process monitoring techniques include illuminating a measurement area on a sample disposed in a process chamber. The measurement area is illuminated using an input beam generated remote from the process chamber and transmitted to a first viewing window of the process chamber by a first optical fiber. Portions of the first input beam reflected from the measurement area are transmitted from the first viewing window to an imaging sensor by a second optical fiber. A sequence of images is obtained at the imaging sensor, and a change in reflectance of pixels within each of the images is determined. The etch or deposition process is monitored based on the change in reflectance.

Abstract: An imaging system for capturing spatial-omic images of biological tissue samples may include an imaging chamber configured to secure a biological tissue sample placed in the imaging system; a Time Delay and Integration (TDI) imager comprising at least one scan line; a light source configured to illuminate an area on the biological tissue sample that is being captured by the TDI imager; and a controller configured to cause the TDI imager to scan the biological tissue sample using one or more TDI scans of the biological tissue sample.

Abstract: Implementations disclosed describe a method of obtaining a first image of a sample using a first light, wherein the sample has been subjected to a processing operation associated with a change of a thickness of the sample. The method further includes weighing the sample to obtain a first mass of the sample. The method further includes determining, based at least in part on the first image of the sample and the first mass of the sample, one or more properties of the sample, such as the change of a thickness of the sample, a change of an refractive index of the sample, and/or a change of an optical density of the sample a distribution of the change of the thickness of the sample.