Abstract: A system for monitoring and controlling the state of a thermal process. The system applies a modulated heat input to a liquid in a vessel and a thermal response measured at the bottom of the vessel provides information for real time processing of thermal properties of the liquid as it is being heated. Detection and control of an unknown boiling point enables a steady simmer or boiling condition in the liquid to be maintained.

Abstract: A femoral nail which can be implanted in a bone has a transverse hole, and an arrangement is provided for generating a magnetic field which has a maximum strength along an axis of the transverse hole and which decreases in strength in directions radially away from the axis. A drill guide for axially aligning a drill with the transverse hole has an axial drill opening through it, and first and second sensor arrangements are provided at axially spaced locations on the drill guide and each have a plurality of sensors which are at angularly spaced locations and are spaced radially from the opening through the drill guide. An arrangement responsive to the first and second sensor arrangements detects a deviation of the drill opening in the drill guide from coaxial alignment with the axis of the hole in the member, and provides an operator perceptible indication of a radial direction from the drill opening to the axis.

Abstract: An electrolytic cell and electrolytic process wherein the cell includes a metal anode (such as a lithium anode), a cathode and an electrolyte. A surface layer which is applied to the metal anode enables transfer of ions from the metal anode to the electrolyte and thus allows the ions to pass back into contact with the metal anode. The surface layer is also electronically conductive so that the ions will be uniformally attracted back onto the metal anode during electrodeposition to, in turn, substantially suppress dendrite growth and, in turn, substantially increase the cycle life of the cell.

Abstract: This invention relates to a process for fabricating a metal-oxide-semiconductor device and to the semiconductor device which has enhanced charge mobility due to the inclusion of a thin layer of intrinsic semiconductor which provides a "fast track" charge channel directly at the accumulated inversion layer. The particular semiconductor device described is the enhanced mobility metal-oxide-semiconductor field effect transistor EMMOSFET having the intrinsic layer from about 100 .ANG. to about 1000 .ANG. thick. The intrinsic layer provides a low resistivity channel between the source and drain of the EMMOSFET resulting in an increase in device speed and a decrease in device heat generation.

Abstract: The disclosed source of coherent radiation is of the type adapted to provide an inversion layer of electrons. The preferred embodiment comprises a grated MOSFET having gallium arsenide or indium antimonide substrate so as to provide a source which is (1) operable at room temperatures, and (2) self-exciting in response to predetermined, substantially constant DC current levels of gate voltage and source-drain voltage.