Abstract: The present invention relates to a substantially water-free photoresist stripping composition. Particularly, the present invention relates to a substantially water-free photoresist stripping composition useful in removing the photoresist after ion-implant process, comprising: (a) an amine, (b) an organic solvent A, and (c) a co-solvent, wherein the composition is substantially water-free (<3 wt % H2O). The present invention also provides a process for post-ion implantation stripping by using the composition of the present invention.

Abstract: An aqueous acidic solution and an aqueous acidic etching solution suitable for texturizing the surface of single crystal and polycrystal silicon substrates, hydrofluoric acid; nitric acid; and at least one anionic polyether, which is surface active; a method for texturizing the surface of single crystal and polycrystal silicon substrates comprising the step of (1) contacting at least one major surface of a substrate with the said aqueous acidic etching solution; (2) etching the at least one major surface of the substrate for a time and at a temperature sufficient to obtain a surface texturization consisting of recesses and protrusions; and (3) removing the at least one major surface of the substrate from the contact with the aqueous acidic etching solution; and a method for manufacturing photovoltaic cells and solar cells using the said solution and the said texturizing method.

Abstract: An aqueous acidic solution and an aqueous acidic etching solution suitable for texturizing the surface of single crystal and polycrystal silicon substrates, hydrofluoric acid; nitric acid; and at least one anionic polyether, which is surface active; a method for texturizing the surface of single crystal and polycrystal silicon substrates comprising the step of (1) contacting at least one major surface of a substrate with the said aqueous acidic etching solution; (2) etching the at least one major surface of the substrate for a time and at a temperature sufficient to obtain a surface texturization consisting of recesses and protrusions; and (3) removing the at least one major surface of the substrate from the contact with the aqueous acidic etching solution; and a method for manufacturing photovoltaic cells and solar cells using the said solution and the said texturizing method.

Abstract: The present invention relates to a substantially water-free photoresist stripping composition. Particularly, the present invention relates to a substantially water-free photoresist stripping composition useful in removing the photoresist after ion-implant process, comprising: (a) an amine, (b) an organic solvent A, and (c) a co-solvent, wherein the composition is substantially water-free (<3 wt % H2O). The present invention also provides a process for post-ion implantation stripping by using the composition of the present invention.