Abstract: An integrated non-linear complex oxide thin film heterostructure with a tailored microstructure architecture design and a method of fabrication thereof, inclusive, is provided. The tailored microstructure architecture design mitigates the undesirable effects of thermal strain, hence provides strain relief, which enables the desirable simultaneously achievement of a high permittivity and high dielectric Q/low dielectric loss in concert with one another. The material design and fabrication method thereof; enables enhanced performance, low cost NLCO-based tunable devices which possess desirable attributes including, but are not limited to, tunable device miniaturization, wide tunability, minimization of signal attenuation, reduced device operational power and enhanced operational range. Furthermore, the materials and related process science protocols are complementary metal oxide semiconductor compatible, scalable and affordable.

Abstract: Integrated non-linear complex oxide (NLCO) thin film artificial structures include tailored microstructural and crystalline phases for designed material architectures and a method of fabrication. A nano-scale poly crystal-amorphous composite film includes an amorphous matrix surrounding crystalline domains/inclusions of the form of particles, platelets, rods and/or needles, etc. Artificial thin film layered material configurations include bilayers, repeat “unit cell” bilayers with variable stacking periodicity (N), and multilayers whereby each individual layer, ni, exhibits a different microstructural crystallinity phase state, hence the microstructural phase state is variable in the vertical direction perpendicular to the substrate. NLCO elements can be organized in array configurations.

Abstract: An integrated non-linear complex oxide thin film heterostructure with a tailored microstructure architecture design and a method of fabrication thereof, inclusive, is provided. The tailored microstructure architecture design mitigates the undesirable effects of thermal strain, hence provides strain relief, which enables the desirable simultaneously achievement of a high permittivity and high dielectric Q/low dielectric loss in concert with one another. The material design and fabrication method thereof; enables enhanced performance, low cost NLCO-based tunable devices which possess desirable attributes including, but are not limited to, tunable device miniaturization, wide tunability, minimization of signal attenuation, reduced device operational power and enhanced operational range. Furthermore, the materials and related process science protocols are complementary metal oxide semiconductor compatible, scalable and affordable.

Abstract: An integrated heterostructure material is achieved by combining the attributes of two perovskite oxide film growth methods, RF sputtering and the metallo-organic solution deposition (MOSD) technique, in combination with employing a novel integrated material design consisting of a SrTO3 thin film layer which serves as a template to achieve a property enhanced, BST-based thin film overgrowth. In specific the integrated materials design consists of a thin RF sputtered SrTiO3 film (lower layer) which underlies a substantially thicker MOSD over-growth Mg doped BST-based film (upper layer). The inventive material design and combinational film growth fabrication method thereof enables beneficial critical material/device characteristics which include enhanced dielectric permittivity in concert with low loss; low leakage current density; high voltage breakdown strength; high tunability; controlled and optimized film microstructure; and a smooth surface morphology with minimal surface defects.

Abstract: An integrated heterostructure material is achieved by combining the attributes of two perovskite oxide film growth methods, RF sputtering and the metallo-organic solution deposition (MOSD) technique, in combination with employing a novel integrated material design consisting of a SrTO3 thin film layer which serves as a template to achieve a property enhanced, BST-based thin film overgrowth. In specific the integrated materials design consists of a thin RF sputtered SrTiO3 film (lower layer) which underlies a substantially thicker MOSD over-growth Mg doped BST-based film (upper layer). The inventive material design and combinational film growth fabrication method thereof enables beneficial critical material/device characteristics which include enhanced dielectric permittivity in concert with low loss; low leakage current density; high voltage breakdown strength; high tunability; controlled and optimized film microstructure; and a smooth surface morphology with minimal surface defects.

Abstract: A compositionally stratified multi-layer Ba1-xSrxTiO3 (BST) heterostructure material is described which includes a lower layer of crystallized Ba1-xSrxTiO3 perovskite oxide where x is in the range of 0.36-0.44, inclusive, deposited on a substrate; an intermediate layer of crystallized Ba1-xSrxTiO3 perovskite oxide where x is in the range of 0.23-0.27, inclusive, in contact with the lower layer; and an upper layer of crystallized Ba1-xSrxTiO3 perovskite oxide where x in the range of 0.08-0.13, inclusive, in contact with the intermediate layer. A phase shifter and/or preselector tunable device including a compositionally stratified multi-layer BST hererostructure material is described according to the present invention. Temperature sensitivity of an inventive phase shifter is reduced by at least 70% in the temperature interval of 20 to 90° C., inclusive, and by at least 14% in the temperature interval of ?10 to 20° C., inclusive, compared to a compositionally homogeneous 60/40 BST material.

Abstract: A compositionally stratified multi-layer Ba1-xSrxTiO3 (BST) heterostructure material is described which includes a lower layer of crystallized Ba1-xSrxTiO3 perovskite oxide where x is in the range of 0.36-0.44, inclusive, deposited on a substrate; an intermediate layer of crystallized Ba1-xSrxTiO3 perovskite oxide where x is in the range of 0.23-0.27, inclusive, in contact with the lower layer; and an upper layer of crystallized Ba1-xSrxTiO3 perovskite oxide where x in the range of 0.08-0.13, inclusive, in contact with the intermediate layer. A phase shifter and/or preselector tunable device including a compositionally stratified multi-layer BST heterostructure material is described according to the present invention. Temperature sensitivity of an inventive phase shifter is reduced by at least 70% in the temperature interval of 20 to 90° C., inclusive, and by at least 14% in the temperature interval of ?10 to 20° C., inclusive, compared to a compositionally homogeneous 60/40 BST material.

Abstract: A compositionally stratified multi-layer Ba1-xSrxTiO3 (BST) heterostructure material is described which includes a lower layer of crystallized Ba1-xSrxTiO3 perovskite oxide where x is in the range of 0.36-0.44, inclusive, deposited on a substrate; an intermediate layer of crystallized Ba1-xSrxTiO3 perovskite oxide where x is in the range of 0.23-0.27, inclusive, in contact with the lower layer; and an upper layer of crystallized Ba1-xSrxTiO3 perovskite oxide where x in the range of 0.08-0.13, inclusive, in contact with the intermediate layer. A phase shifter and/or preselector tunable device including a compositionally stratified multi-layer BST hererostructure material is described according to the present invention. Temperature sensitivity of an inventive phase shifter is reduced by at least 70% in the temperature interval of 20 to 90° C., inclusive, and by at least 14% in the temperature interval of ?10 to 20° C., inclusive, compared to a compositionally homogeneous 60/40 BST material.

Abstract: A compositionally stratified multi-layer Ba1-xSrxTiO3 (BST) heterostructure material is described which includes a lower layer of crystallized Ba1-xSrxTiO3 perovskite oxide where x is in the range of 0.36-0.44, inclusive, deposited on a substrate; an intermediate layer of crystallized Ba1-xSrxTiO3 perovskite oxide where x is in the range of 0.23-0.27, inclusive, in contact with the lower layer; and an upper layer of crystallized Ba1-xSrxTiO3 perovskite oxide where x in the range of 0.08-0.13, inclusive, in contact with the intermediate layer. A phase shifter and/or preselector tunable device including a compositionally stratified multi-layer BST heterostructure material is described according to the present invention. Temperature sensitivity of an inventive phase shifter is reduced by at least 70% in the temperature interval of 20 to 90° C., inclusive, and by at least 14% in the temperature interval of ?10 to 20° C., inclusive, compared to a compositionally homogeneous 60/40 BST material.