Patents by Inventor Melvin Desilva

Melvin Desilva has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5824599
    Abstract: A method for utilizing electroless copper deposition to form interconnects on a semiconductor. Once a via or a trench is formed in a dielectric layer, a titanium nitride (TiN) or tantalum (Ta) barrier layer is deposited. Then, a catalytic copper seed layer is conformally blanket deposited in vacuum over the barrier layer. Next, without breaking the vacuum, an aluminum protective layer is deposited onto the catalytic layer to encapsulate and protect the catalytic layer from oxidizing. An electroless deposition technique is then used to auto-catalytically deposit copper on the catalytic layer. The electroless deposition solution dissolves the overlying protective layer to expose the surface of the underlying catalytic layer. The electroless copper deposition occurs on this catalytic surface, and continues until the via/trench is filled.
    Type: Grant
    Filed: January 16, 1996
    Date of Patent: October 20, 1998
    Assignees: Cornell Research Foundation, Inc., Intel Corporation, Sematech, Inc.
    Inventors: Yosef Schacham-Diamand, Valery M. Dubin, Chiu H. Ting, Bin Zhao, Prahalad K. Vasudev, Melvin Desilva