Patents by Inventor Meng-Tse Chen
Meng-Tse Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11954259Abstract: Glasses with gesture recognition function include a glasses frame and a gesture recognition system. The gesture recognition system is disposed on the glasses frame and configured to detect hand gestures in front of the glasses thereby generating a control command. The gesture recognition system transmits the control command to an electronic device to correspondingly control the electronic device.Type: GrantFiled: March 8, 2021Date of Patent: April 9, 2024Assignee: PIXART IMAGING INC.Inventors: Horng-Goung Lai, En-Feng Hsu, Meng-Huan Hsieh, Yu-Hao Huang, Nien-Tse Chen
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Patent number: 11955460Abstract: In accordance with some embodiments, a package-on-package (PoP) structure includes a first semiconductor package having a first side and a second side opposing the first side, a second semiconductor package having a first side and a second side opposing the first side, and a plurality of inter-package connector coupled between the first side of the first semiconductor package and the first side of the second semiconductor package. The PoP structure further includes a first molding material on the second side of the first semiconductor package. The second side of the second semiconductor package is substantially free of the first molding material.Type: GrantFiled: October 5, 2020Date of Patent: April 9, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yi-Da Tsai, Meng-Tse Chen, Sheng-Feng Weng, Sheng-Hsiang Chiu, Wei-Hung Lin, Ming-Da Cheng, Ching-Hua Hsieh, Chung-Shi Liu
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Publication number: 20240113172Abstract: A semiconductor device includes a substrate, a channel layer, a gate structure, source/drain regions, and an insulating layer. The channel layer is disposed over the substrate. The gate structure is disposed over the channel layer. The source/drain regions are disposed over the substrate and disposed at two opposite sides of the channel layer. The insulating layer is disposed between the channel layer and the source/drain regions.Type: ApplicationFiled: March 5, 2023Publication date: April 4, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yi-Tse Hung, Meng-Zhan Li, Tzu-Chiang Chen, Chao-Ching Cheng, Iuliana Radu
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Patent number: 11929115Abstract: A memory device and an operation method thereof are provided. The memory device includes memory cells, each having a static random access memory (SRAM) cell and a non-volatile memory cell. The SRAM cell is configured to store complementary data at first and second storage nodes. The non-volatile memory cell is configured to replicate and retain the complementary data before the SRAM cell loses power supply, and to rewrite the replicated data to the first and second storage nodes of the SRAM cell after the power supply of the SRAM cell is restored.Type: GrantFiled: April 8, 2022Date of Patent: March 12, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jer-Fu Wang, Hung-Li Chiang, Yi-Tse Hung, Tzu-Chiang Chen, Meng-Fan Chang
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Patent number: 11915755Abstract: A layout of a semiconductor memory device includes a substrate and a ternary content addressable memory (TCAM). The TCAM is disposed on the substrate and includes a plurality of TCAM bit cells, where at least two of the TCAM bit cells are mirror-symmetrical along an axis of symmetry, and each of the TCAM bit cells includes two storage units electrically connected to two word lines respectively, and a logic circuit electrically connected to the storage units. The logic circuit includes two first reading transistors, and two second reading transistors, where each of the second reading transistors includes a gate and source and drain regions, the source and drain regions of the second reading transistors are electrically connected to two matching lines and the first reading transistors, respectively, where the word lines are disposed parallel to and between the matching lines.Type: GrantFiled: January 20, 2022Date of Patent: February 27, 2024Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chun-Yen Tseng, Yu-Tse Kuo, Shu-Ru Wang, Chun-Hsien Huang, Hsin-Chih Yu, Meng-Ping Chuang, Li-Ping Huang, Yu-Fang Chen
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Publication number: 20240045539Abstract: A touch screen (500) can include electrodes (520, 540) (e.g., first and second touch electrodes, reference electrodes) on opposite sides (e.g., top and bottom) of a substrate (510). In some examples, vias (618, 638) can be used to couple the touch electrodes (520, 540) to conductive connections (518, 538) of flex circuits (502, 522) such that the connections (604, 624) to the flex circuits (502, 522) can be on the same side of the substrate (510) even if the touch electrodes (520, 540) are on opposite sides of the substrate (510). The conductive filling material of the via (618) can make direct contact with the conductive connections (604, 624) of the flex circuits (502, 522), for example.Type: ApplicationFiled: December 9, 2020Publication date: February 8, 2024Inventors: Meng-Tse CHEN, Arnoldus Alvin BARLIAN, Bayu Atmaja THEDJOISWORO, Boris RUSS, Ziyang ZHANG, Nathan Krishan GUPTA
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Publication number: 20230378153Abstract: A semiconductor device includes a first package component and a second package component. The first package component has a first die formed on a first substrate. A second package component has a second die formed on a second substrate. A thermal isolation material is attached on the first die, wherein the thermal isolation material thermally insulates the second die from the first die, and the thermal isolation material has a thermal conductivity of from about 0.024 W/mK to about 0.2 W/mK. A first set of conductive elements couples the first package component to the second package component.Type: ApplicationFiled: July 28, 2023Publication date: November 23, 2023Inventors: Meng-Tse Chen, Kuei-Wei Huang, Tsai-Tsung Tsai, Ai-Tee Ang, Ming-Da Cheng, Chung-Shi Liu
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Publication number: 20230352497Abstract: A display may have one or more bent portions. To increase the magnitude of curvature in a display and/or to allow for compound curvature in the display, a display panel may be partially formed in a planar state. The partial display panel is then bent to have desired curvature. After the partial display panel is bent, additional display components that are susceptible to damage during the bending process may be added to complete the display panel. A flexible printed circuit may be formed directly on the display panel using precise deposition of conductive material. By forming the flexible printed circuit layer-by-layer directly on the display panel, no substantive pressure needs to be applied to the display panel. Electrical connections may therefore be made to the display panel in regions of the display with high levels of curvature and/or with compound curvature without causing front-of-screen artifacts for the display panel.Type: ApplicationFiled: March 1, 2023Publication date: November 2, 2023Inventors: Meng-Tse Chen, Anshi Liang, Arnoldus A Barlian, Bayu A Thedjoisworo, Boris A Russ, Chun-Hsien Lee, Chun-Lan Wu, Han-Chieh Chang, Jiming Yu, Marc J DeVincentis, Nathan K Gupta, Paolo Sacchetto, Paul S Drzaic, Zhen Zhang, Ziyang Zhang
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Publication number: 20230343914Abstract: Conductive traces may be conformally wrapped around the side of a display panel that includes an array of display pixels. The conductive traces may electrically connect contacts on an upper surface of the display panel to corresponding contacts on a flexible printed circuit that is attached to a lower surface of the display panel. The side-wrapped conductive traces may be interposed between first and second insulating layers. The flexible printed circuit may have a multi-step interface that is electrically connected to the side-wrapped conductive traces. A system-in-package including a display driver integrated circuit may be mounted to the flexible printed circuit. The system-in-package may include a plurality of redistribution layers that electrically connect contacts on the display driver integrated circuit to contacts on the flexible printed circuit.Type: ApplicationFiled: March 16, 2023Publication date: October 26, 2023Inventors: Han-Chieh Chang, Anshi Liang, Arnoldus A Barlian, Bayu A Thedjoisworo, Boris A Russ, Chun-Lan Wu, Ken Hsuan Liao, Marc J DeVincentis, Meng-Tse Chen, Nathan K Gupta, Paolo Sacchetto, Paul S Drzaic, Po-Jui Chen, Ying-Chih Wang, Yong Sun, Zhen Zhang, Ziyang Zhang
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Patent number: 11776945Abstract: A semiconductor device includes a first package component and a second package component. The first package component has a first die formed on a first substrate. A second package component has a second die formed on a second substrate. A thermal isolation material is attached on the first die, wherein the thermal isolation material thermally insulates the second die from the first die, and the thermal isolation material has a thermal conductivity of from about 0.024 W/mK to about 0.2 W/mK. A first set of conductive elements couples the first package component to the second package component.Type: GrantFiled: September 24, 2019Date of Patent: October 3, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Meng-Tse Chen, Kuei-Wei Huang, Tsai-Tsung Tsai, Ai-Tee Ang, Ming-Da Cheng, Chung-Shi Liu
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Publication number: 20230307391Abstract: A semiconductor device including a chip package, a dielectric structure, and a first antenna pattern is provided. The dielectric structure is disposed on the chip package and includes a cavity and a vent in communication with the cavity. The first antenna pattern is disposed on the dielectric structure, wherein the chip package is electrically coupled to the first antenna pattern, and the cavity of the dielectric structure is disposed between the chip package and the first antenna pattern.Type: ApplicationFiled: May 29, 2023Publication date: September 28, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Albert Wan, Ching-Hua Hsieh, Chao-Wen Shih, Han-Ping Pu, Meng-Tse Chen, Sheng-Hsiang Chiu
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Patent number: 11749535Abstract: A system and method for applying an underfill is provided. An embodiment comprises applying an underfill to a substrate and patterning the underfill. Once patterned other semiconductor devices, such as semiconductor dies or semiconductor packages may then be attached to the substrate through the underfill, with electrical connections from the other semiconductor devices extending into the pattern of the underfill.Type: GrantFiled: July 26, 2018Date of Patent: September 5, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Meng-Tse Chen, Hsiu-Jen Lin, Wei-Hung Lin, Kuei-Wei Huang, Ming-Da Cheng, Chung-Shi Liu
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Patent number: 11705409Abstract: A semiconductor device including a chip package, a dielectric structure, and a first antenna pattern is provided. The dielectric structure is disposed on the chip package and includes a cavity and a vent in communication with the cavity. The first antenna pattern is disposed on the dielectric structure, wherein the chip package is electrically coupled to the first antenna pattern, and the cavity of the dielectric structure is disposed between the chip package and the first antenna pattern.Type: GrantFiled: June 29, 2020Date of Patent: July 18, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Albert Wan, Ching-Hua Hsieh, Chao-Wen Shih, Han-Ping Pu, Meng-Tse Chen, Sheng-Hsiang Chiu
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Publication number: 20230154896Abstract: An embodiment is method including forming a first die package over a carrier substrate, the first die package comprising a first die, forming a first redistribution layer over and coupled to the first die, the first redistribution layer including one or more metal layers disposed in one or more dielectric layers, adhering a second die over the redistribution layer, laminating a first dielectric material over the second die and the first redistribution layer, forming first vias through the first dielectric material to the second die and forming second vias through the first dielectric material to the first redistribution layer, and forming a second redistribution layer over the first dielectric material and over and coupled to the first vias and the second vias.Type: ApplicationFiled: January 3, 2023Publication date: May 18, 2023Inventors: Meng-Tse Chen, Chung-Shi Liu, Chih-Wei Lin, Hui-Min Huang, Hsuan-Ting Kuo, Ming-Da Cheng
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Publication number: 20230074456Abstract: An emulation system traverses trace buffers to read data captured from a design under test (DUT). The emulation system receives a request to read at least a portion of DUT data. The emulation system reads a header of the latest sample of the DUT data, where header of each sample of the DUT data includes one or more pointers to a previously stored sample. The samples of the DUT data are partitioned into frames and sectors. The emulation system can identify samples of the DUT data using the pointers in the header of the samples and compare time stamps of the samples against a specified time stamp in the received request. After identifying a sample having the specified time stamp, the emulation system may read the sample for output to the user (e.g., reconstructing a waveform using the sample).Type: ApplicationFiled: September 6, 2022Publication date: March 9, 2023Inventors: Chia-Wei Liang, Wenxin Wang, Meng-Tse Chen, Goichiro Ono, Zhe Zhao, Yang Song, Yu Sui, Yuchen Xu
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Patent number: 11545465Abstract: An embodiment is method including forming a first die package over a carrier substrate, the first die package comprising a first die, forming a first redistribution layer over and coupled to the first die, the first redistribution layer including one or more metal layers disposed in one or more dielectric layers, adhering a second die over the redistribution layer, laminating a first dielectric material over the second die and the first redistribution layer, forming first vias through the first dielectric material to the second die and forming second vias through the first dielectric material to the first redistribution layer, and forming a second redistribution layer over the first dielectric material and over and coupled to the first vias and the second vias.Type: GrantFiled: December 7, 2020Date of Patent: January 3, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Meng-Tse Chen, Chung-Shi Liu, Chih-Wei Lin, Hui-Min Huang, Hsuan-Ting Kuo, Ming-Da Cheng
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Patent number: 11390000Abstract: A method includes placing a package structure into a mold chase, with top surfaces of device dies in the package structure contacting a release film in the mold chase. A molding compound is injected into an inner space of the mold chase through an injection port, with the injection port on a side of the mold chase. During the injection of the molding compound, a venting step is performed through a first venting port and a second venting port of the mold chase. The first venting port has a first flow rate, and the second port has a second flow rate different from the first flow rate.Type: GrantFiled: December 13, 2019Date of Patent: July 19, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Bor-Ping Jang, Yeong-Jyh Lin, Chien Ling Hwang, Chung-Shi Liu, Meng-Tse Chen, Ming-Da Cheng, Chen-Hua Yu
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Patent number: 11264342Abstract: Some embodiments relate to a semiconductor device package, which includes a substrate with a contact pad. A non-solder ball is coupled to the contact pad at a contact pad interface surface. A layer of solder is disposed over an outer surface of the non-solder ball, and has an inner surface and an outer surface which are generally concentric with the outer surface of the non-solder ball. An intermediate layer separates the non-solder ball and the layer of solder. The intermediate layer is distinct in composition from both the non-solder ball and the layer of solder. Sidewalls of the layer of solder are curved or sphere-like and terminate at a planar surface, which is disposed at a maximum height of the layer of solder as measured from the contact pad interface surface.Type: GrantFiled: January 3, 2020Date of Patent: March 1, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chen-Hua Yu, Chung-Shi Liu, Ming-Da Cheng, Mirng-Ji Lii, Meng-Tse Chen, Wei-Hung Lin
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Patent number: 11177237Abstract: A manufacturing method for semiconductor packages is provided. Chips are provided on a carrier. Through interlayer vias are formed over the carrier to surround the chips. A molding compound is formed over the carrier to partially and laterally encapsulate the chip and the through interlayer vias. The molding compound comprises pits on a top surface thereof. A polymeric molding compound is formed on the molding compound to fill the pits of the molding compound.Type: GrantFiled: December 16, 2019Date of Patent: November 16, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Meng-Tse Chen, Ching-Hua Hsieh, Chung-Shi Liu, Chih-Wei Lin
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Patent number: 11133285Abstract: The present disclosure, in some embodiments, relates to a method of forming a package. The method includes coupling a first package component to a second package component using a first set of conductive elements. A first polymer-comprising material is formed over the second package component and surrounding the first set of conductive elements. The first polymer-comprising material is cured to solidify the first polymer-comprising material. A part of the first polymer-comprising material is removed to expose an upper surface of the second package component. The second package component is coupled to a third package component using a second set of conductive elements that are formed onto the upper surface of the second package component.Type: GrantFiled: March 21, 2019Date of Patent: September 28, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Meng-Tse Chen, Yu-Chih Liu, Hui-Min Huang, Wei-Hung Lin, Jing Ruei Lu, Ming-Da Cheng, Chung-Shi Liu