Patents by Inventor Mi Ri Lee

Mi Ri Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190276322
    Abstract: The present invention relates to a method for producing a silica aerogel blanket, the method comprising recovering a supercritical waste liquid generated after performing a step of supercritical drying, neutralizing the recovered supercritical waste liquid by adding an acid thereto for recycling, and reusing the recycled supercritical waste liquid, and a silica aerogel blanket produced thereby.
    Type: Application
    Filed: March 22, 2018
    Publication date: September 12, 2019
    Inventors: Mi Ri KIM, Je Kyun LEE, Kyoung Shil OH
  • Publication number: 20190218598
    Abstract: A graphene nanosensor is capable of: simply, quickly and accurately detecting RNA biomarkers that have disease-specific over-expression, as well as an expression level thereof, in living tissues or cells; obtaining a product with high reliability and resolution. The graphene nanosensor enables rapid diagnosis of a disease and being helpful for establishing treatment policy of the disease. The graphene nanosensor may rapidly and simply detect a target RNS with high sensitivity at low costs, thereby expecting superior effects when used in clinical applications and thus replacing the FISH method.
    Type: Application
    Filed: August 10, 2017
    Publication date: July 18, 2019
    Inventors: Do Won HWANG, Dong Soo LEE, Yoo Ri CHOI, Mi Young KIM
  • Patent number: 10289807
    Abstract: This invention relates to a method of evaluating the similarity of structural effects of solvents determining solvent reactivity and a system using the same, and more particularly to a novel evaluation method that is able to quantitatively measure the structural effect of a solvent having an influence on reactivity upon reaction of the solvent with a predetermined material and to a system using the same.
    Type: Grant
    Filed: July 19, 2016
    Date of Patent: May 14, 2019
    Assignee: LG Chem, Ltd.
    Inventors: Seung-Yup Lee, Ji-Won Jeong, Mi-Ri Kim, Kyoung-Shil Oh, Kyoung-Hoon Kim
  • Publication number: 20180203418
    Abstract: An electronic device according to various embodiments of the present invention may comprise: a housing; a display device mounted on a surface of the housing; a bezel, which is rotatably coupled to the housing, and which rotates along the circumference of the display device; and elastic portions provided on the housing so as to provide the bezel with an elastic force in a first direction. The above electronic device may be implemented variously according to embodiments.
    Type: Application
    Filed: July 11, 2016
    Publication date: July 19, 2018
    Inventors: In-Sik CHUNG, Yong-Seok BANG, Mi-Ri LEE
  • Publication number: 20180175042
    Abstract: A method for fabricating a semiconductor device includes: forming a transistor in a semiconductor substrate; forming a capacitor including a hydrogen-containing top electrode over the transistor; and performing an annealing process for hydrogen passivation after the capacitor is formed.
    Type: Application
    Filed: September 11, 2017
    Publication date: June 21, 2018
    Inventors: Il-Sik JANG, Ji-Hwan PARK, Mi-Ri LEE, Bong-Seok JEON, Yong-Soo JOUNG, Sun-Hwan HWANG
  • Patent number: 9850592
    Abstract: Provided is a method of forming a complex plating film using multi-layer graphene metal particles. The method of forming the plating film may include preparing a powder with a metal particle structure coated with multi-layer graphene, and forming a plating film by adding the powder to a plating solution through electric plating.
    Type: Grant
    Filed: July 21, 2015
    Date of Patent: December 26, 2017
    Assignee: Research & Business Foundation Sungkyunkwan University
    Inventors: Su-Jeong Suh, Young-Il Song, Jung-Ho Park, Jung-Kab Park, Tae-Yoo Kim, Hwa-Jin Son, Jin-Ha Shin, Mi-Ri Lee, Jungwoo Lee, Changhyoung Lee, Younglae Cho, Seung-Bin Baeg, Byung-Wook Ahn, Sook-Young Yun
  • Patent number: 9728638
    Abstract: A method for fabricating a semiconductor device includes forming a first conductive layer doped with an impurity for forming a cell junction over a semiconductor substrate, forming a second layer over the first conductive layer, forming a plurality of active regions by etching the second layer and the first conductive layer, the plurality of the active regions being separated from one another by trenches, forming a side contact connected to a sidewall of the first conductive layer, and forming a plurality of metal bit lines each connected to the side contact and filling a portion of each trench.
    Type: Grant
    Filed: December 28, 2015
    Date of Patent: August 8, 2017
    Assignee: SK Hynix Inc.
    Inventors: Jin-Ku Lee, Young-Ho Lee, Mi-Ri Lee
  • Patent number: 9418891
    Abstract: A method for fabricating a semiconductor device includes forming a silicon-containing layer; forming a metal-containing layer over the silicon-containing layer; forming an undercut prevention layer between the silicon containing layer and the metal containing layer; etching the metal-containing layer; and forming a conductive structure by etching the undercut prevention layer and the silicon-containing layer.
    Type: Grant
    Filed: December 8, 2015
    Date of Patent: August 16, 2016
    Assignee: SK Hynix Inc.
    Inventors: Kyong-Bong Rouh, Shang-Koon Na, Yong-Seok Eun, Su-Ho Kim, Tae-Han Kim, Mi-Ri Lee
  • Patent number: 9368586
    Abstract: A transistor including a recessed gate structure having improved doping characteristics and a method for forming such a transistor. The transistor includes a recess in a semiconductor substrate, where the recess is filled with a recessed gate structure including an impurity doped layer and a layer doped with a capture species. The capture species accumulates the impurity and diffuses the impurity to other layers of the recessed gate structure.
    Type: Grant
    Filed: December 19, 2012
    Date of Patent: June 14, 2016
    Assignee: SK Hynix Inc.
    Inventors: Kyong-Bong Rouh, Yong-Seok Eun, Mi-Ri Lee
  • Patent number: 9356005
    Abstract: Disclosed herein is a light emitting diode (LED) package. The present invention is directed to a light emitting diode (LED) package capable of efficiently dissipating heat generated from LEDs. The present invention is also directed to a LED package in which a plurality of LEDs are disposed and heat generated from the plurality of LEDs is efficiently dissipated.
    Type: Grant
    Filed: May 27, 2015
    Date of Patent: May 31, 2016
    Assignee: RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
    Inventors: Su-jeong Suh, Hwa-sun Park, Jung-kab Park, Tae-yoo Kim, Young-lae Cho, Mi-ri Lee, Jin-ha Shin, Hwa-jin Son, Jung-woo Lee
  • Publication number: 20160111535
    Abstract: A method for fabricating a semiconductor device includes forming a first conductive layer doped with an impurity for forming a cell junction over a semiconductor substrate, forming a second layer over the first conductive layer, forming a plurality of active regions by etching the second layer and the first conductive layer, the plurality of the active regions being separated from one another by trenches, forming a side contact connected to a sidewall of the first conductive layer, and forming a plurality of metal bit lines each connected to the side contact and filling a portion of each trench.
    Type: Application
    Filed: December 28, 2015
    Publication date: April 21, 2016
    Inventors: Jin-Ku LEE, Young-Ho LEE, Mi-Ri LEE
  • Patent number: 9318390
    Abstract: A semiconductor device includes a semiconductor substrate and a gate insulation layer formed over the semiconductor substrate. A gate electrode is formed over the gate insulation layer. The gate electrode includes a silicon-containing electrode including a dopant, a capturing material to capture the dopant, and an activation control material to control an activation of the dopant.
    Type: Grant
    Filed: February 10, 2015
    Date of Patent: April 19, 2016
    Assignee: SK Hynix Inc.
    Inventors: Kyong-Bong Rouh, Shang-Koon Na, Mi-Ri Lee, Hun-Sung Lee
  • Publication number: 20160093527
    Abstract: A method for fabricating a semiconductor device includes forming a silicon-containing layer; forming a metal-containing layer over the silicon-containing layer; forming an undercut prevention layer between the silicon containing layer and the metal containing layer; etching the metal-containing layer; and forming a conductive structure by etching the undercut prevention layer and the silicon-containing layer.
    Type: Application
    Filed: December 8, 2015
    Publication date: March 31, 2016
    Inventors: Kyong-Bong ROUH, Shang-Koon NA, Yong-Seok EUN, Su-Ho KIM, Tae-Han KIM, Mi-Ri LEE
  • Patent number: 9263575
    Abstract: A method for fabricating a semiconductor device includes forming a first conductive layer doped with an impurity for forming a cell junction over a semiconductor substrate, forming a second layer over the first conductive layer, forming a plurality of active regions by etching the second layer and the first conductive layer, the plurality of the active regions being separated from one another by trenches, forming a side contact connected to a sidewall of the first conductive layer, and forming a plurality of metal bit lines each connected to the side contact and filling a portion of each trench.
    Type: Grant
    Filed: December 13, 2012
    Date of Patent: February 16, 2016
    Assignee: SK Hynix Inc.
    Inventors: Jin-Ku Lee, Young-Ho Lee, Mi-Ri Lee
  • Publication number: 20160024681
    Abstract: Provided is a method of forming a complex plating film using multi-layer graphene metal particles. The method of forming the plating film may include preparing a powder with a metal particle structure coated with multi-layer graphene, and forming a plating film by adding the powder to a plating solution through electric plating.
    Type: Application
    Filed: July 21, 2015
    Publication date: January 28, 2016
    Applicant: RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
    Inventors: Su-Jeong SUH, Young-Il SONG, Jung-Ho PARK, Jung-Kab PARK, Tae-Yoo KIM, Hwa-Jin SON, Jin-Ha SHIN, Mi-Ri LEE, Jungwoo LEE, Changhyoung LEE, Younglae CHO, Seung-Bin BAEG, Byung-Wook AHN, Sook-Young YUN
  • Patent number: D831605
    Type: Grant
    Filed: March 16, 2018
    Date of Patent: October 23, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jae-Ho Baik, Mi-Ri Lee, Jong-Bo Jung, Seon-Keun Park
  • Patent number: D839250
    Type: Grant
    Filed: March 16, 2018
    Date of Patent: January 29, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jae-Ho Baik, Mi-Ri Lee, Jong-Bo Jung, Seon-Keun Park
  • Patent number: D839251
    Type: Grant
    Filed: March 16, 2018
    Date of Patent: January 29, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jae-Ho Baik, Mi-Ri Lee, Jong-Bo Jung, Seon-Keun Park
  • Patent number: D839848
    Type: Grant
    Filed: March 16, 2018
    Date of Patent: February 5, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jae-Ho Baik, Mi-Ri Lee, Jong-Bo Jung, Seon-Keun Park
  • Patent number: RE47577
    Abstract: A method for providing widgets and a TV using the same are disclosed. The method for providing widgets includes searching for widgets related to a certain keyword or a broadcast program among widgets provided by a plurality of content providers, and displaying the searched widgets on a widget search list classified according to content provider. A user can thereby search for and use the widgets provided from various content providers more easily.
    Type: Grant
    Filed: April 20, 2015
    Date of Patent: August 20, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sang-hee Lee, Yong-hwan Kwon, Dong-heon Lee, Mi-ju Park, Won-il Kim, Yeo-ri Yoon