Abstract: The present disclosure relates to an organic electroluminescent compound represented by formula 2? or formula 2?, a plurality of host materials comprising at least one first host compound and at least one second host compound, and an organic electroluminescent device comprising the same. An organic electroluminescent device having improved driving voltage, luminous efficiency, power efficiency and/or lifespan properties can be provided by including the organic electroluminescent compound or a specific combination of compounds according to the present disclosure as a host material(s).

Abstract: A silica sol, a silica aerogel blanket using the same, and a method for manufacturing the same, wherein a hydrophobizing agent, a base catalyst, an organic solvent, and water are included in a catalyst composition when manufacturing the silica aerogel blanket, so that a wet aging step which is performed under high-temperature conditions and increases the amount of a solvent used, surface modification step which uses a large amount of an organic solvent and an expensive surface modifier, resulting in a process that is complex and long and thus inhibiting economic feasibility and productivity, can be omitted.

Abstract: Disclosed are a plasmid comprising dxCas9 and a CRP derivative for controlling the expression of a target gene, a recombinant strain transformed with the plasmid, a preparation method therefor, a target gene control system, and a method for controlling the expression of a target gene, wherein the plasmid, recombinant strain, and expression control system according to the present invention can improve the production of high-value-added substances by construction of a system for simultaneously and multiply controlling the expression of target genes.

Abstract: A method for fabricating a semiconductor device includes: forming a transistor in a semiconductor substrate; forming a capacitor including a hydrogen-containing top electrode over the transistor; and performing an annealing process for hydrogen passivation after the capacitor is formed.

Abstract: A method for fabricating a semiconductor device includes: forming a transistor in a semiconductor substrate; forming a capacitor including a hydrogen-containing top electrode over the transistor; and performing an annealing process for hydrogen passivation after the capacitor is formed.