Patents by Inventor Michael A. Cecere

Michael A. Cecere has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5840630
    Abstract: A focused ion beam is used to etch material from a specimen while directing a vapor of 1,2 di-iodo-ethane at the surface being etched. The etch rate is accelerated for surfaces of aluminum and gold relative to the etch rate without use of 1,2 di-iodo-ethane.
    Type: Grant
    Filed: December 20, 1996
    Date of Patent: November 24, 1998
    Assignee: Schlumberger Technologies Inc.
    Inventors: Michael A. Cecere, Theodore Ralph Lundquist
  • Patent number: 5747818
    Abstract: Apparatus for supplying a jet of chemical vapor at a substantially constant rate comprises a crucible for containing a quantity of chemical, a hollow needle, a flow path from the crucible to the hollow needle, a Peltier element in thermal communication with the crucible, and a temperature control circuit responsive to temperature in the crucible for powering the Peltier element so as to maintain temperature of the crucible substantially constant. The temperature control circuit powers the Peltier element so as to maintain temperature of the crucible below (or above) ambient temperature. The apparatus is useful in a system for modifying an integrated circuit specimen which further comprises a vacuum chamber and an ion-optical column for directing a focused ion beam at an integrated circuit specimen within the vacuum chamber. Control of vapor pressure, and thus flow rate, offers improved control over FIB processing of integrated circuit specimens.
    Type: Grant
    Filed: October 21, 1996
    Date of Patent: May 5, 1998
    Assignee: Schlumberger Technologies Inc.
    Inventor: Michael A. Cecere
  • Patent number: 5700526
    Abstract: Methods are provided for depositing insulator material at a pre-defined area of an integrated circuit (IC) by: placing an IC in a vacuum chamber; applying to a localized surface region of the integrated circuit at which insulator material is to be deposited a first gas containing molecules of a dissociable compound comprising atoms of silicon and oxygen and a second gas containing molecules of a compound which reacts with metal ions; generating a focused ion beam having metal ions of sufficient energy to dissociate molecules of the first gas; and directing the focused ion beam at the localized surface region to dissociate at least some of the molecules of the first gas and to thereby deposit on at least a portion of the localized surface region a material containing atoms of silicon and oxygen. The dissociable compound comprises atoms of carbon and hydrogen, such as di-t-butoxydiacetoxy-silane. The compound which reacts with metal ions may be carbon tetrabromide or ammonium carbonate.
    Type: Grant
    Filed: May 4, 1995
    Date of Patent: December 23, 1997
    Assignee: Schlumberger Technologies Inc.
    Inventors: Hongyu Ximen, Michael A. Cecere, Douglas Masnaghetti