Patents by Inventor Michael Albert Tischler
Michael Albert Tischler has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8988005Abstract: In various embodiments, an illumination system includes multiple light-emitting strings that are selectively activated or deactivated to regulate an overall output of the array.Type: GrantFiled: February 16, 2012Date of Patent: March 24, 2015Assignee: Cooledge Lighting Inc.Inventors: Paul Jungwirth, Ian Ashdown, Michael Albert Tischler
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Patent number: 8455370Abstract: This invention provides methods that permit wafers to be loaded and unloaded in a gas-phase epitaxial growth chamber at high temperatures. Specifically, this invention provides a method for moving wafers or substrates that can bathe a substrate being moved in active gases that are optionally temperature controlled. The active gases can act to limit or prevent sublimation or decomposition of the wafer surface, and can be temperature controlled to limit or prevent thermal damage. Thereby, previously-necessary temperature ramping of growth chambers can be reduced or eliminated leading to improvement in wafer throughput and system efficiency.Type: GrantFiled: March 2, 2012Date of Patent: June 4, 2013Assignee: SoitecInventors: Michael Albert Tischler, Ronald Thomas Bertram, Jr.
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Patent number: 8431419Abstract: A semiconductor growth system includes a chamber and a source of electromagnetic radiation. A detector is arranged to detect absorption of radiation from the source by a chloride- based chemical of the reaction chamber. A control system controls the operation of the chamber in response to the absorption of radiation by the chloride-based chemical. The control system controls the operation of the chamber by adjusting a parameter of the reaction chamber.Type: GrantFiled: July 21, 2009Date of Patent: April 30, 2013Assignee: SoitecInventors: Ronald Thomas Bertram, Jr., Chantal Arena, Christiaan J. Werkhoven, Michael Albert Tischler, Vasil Vorsa, Andrew D. Johnson
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Patent number: 8384114Abstract: The present invention relates to a light emitting device comprising a plurality of electrically coupled light emitting elements, wherein each light emitting element has a luminous efficacy vs. current characteristic, wherein said luminous efficacy vs. current characteristic has a maximum luminous efficacy value and wherein at least one of said light emitting devices is operated at a current corresponding to a luminous efficacy value that is within 10% of said maximum luminous efficacy value. The present invention also relates to methods of making said light emitting device, to lamps comprising said light emitting device and to methods of operating said light emitting device.Type: GrantFiled: June 23, 2010Date of Patent: February 26, 2013Assignee: Cooledge Lighting Inc.Inventors: Michael Albert Tischler, Vladimir Odnoblyudov, David Keogh
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Patent number: 8338849Abstract: In various embodiments, lighting systems include an electrically insulating carrier having a plurality of conductive elements disposed thereon, a light-emitting array, and at least one power source. The light-emitting array is disposed over the carrier and includes a plurality of light-emitting strings, each light-emitting string comprising a plurality of unpackaged light-emitting diode (LED) dies electrically connected in series. Each LED die has at least two electrical contacts on one surface thereof, and each electrical contact is electrically connected to a conductive element by a conductive adhesive. The power source provides power to the light-emitting strings.Type: GrantFiled: June 14, 2012Date of Patent: December 25, 2012Assignee: Cooledge Lighting, Inc.Inventors: Michael Albert Tischler, Vladimir Odnoblyudov, David Keogh
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Publication number: 20120212138Abstract: In various embodiments, an illumination system includes multiple light-emitting strings that are selectively activated or deactivated to regulate an overall output of the array.Type: ApplicationFiled: February 16, 2012Publication date: August 23, 2012Inventors: Paul Jungwirth, Ian Ashdown, Michael Albert Tischler
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Publication number: 20120164843Abstract: This invention provides methods that permit wafers to be loaded and unloaded in a gas-phase epitaxial growth chamber at high temperatures. Specifically, this invention provides a method for moving wafers or substrates that can bathe a substrate being moved in active gases that are optionally temperature controlled. The active gases can act to limit or prevent sublimation or decomposition of the wafer surface, and can be temperature controlled to limit or prevent thermal damage. Thereby, previously-necessary temperature ramping of growth chambers can be reduced or eliminated leading to improvement in wafer throughput and system efficiency.Type: ApplicationFiled: March 2, 2012Publication date: June 28, 2012Applicant: SOITECInventors: Michael Albert Tischler, Ronald Thomas Bertram, JR.
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Publication number: 20120146066Abstract: The present invention relates to a light emitting device comprising a plurality of electrically coupled light emitting elements, wherein each light emitting element has a luminous efficacy vs. current characteristic, wherein said luminous efficacy vs. current characteristic has a maximum luminous efficacy value and wherein at least one of said light emitting devices is operated at a current corresponding to a luminous efficacy value that is within 10% of said maximum luminous efficacy value. The present invention also relates to methods of making said light emitting device, to lamps comprising said light emitting device and to methods of operating said light emitting device.Type: ApplicationFiled: June 23, 2010Publication date: June 14, 2012Inventors: Michael Albert Tischler, Vladimir Odnoblyudov, David Keogh
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Patent number: 8153536Abstract: This invention provides apparatus, protocols, and methods that permit wafers to be loaded and unloaded in a gas-phase epitaxial growth chamber at high temperatures. Specifically, this invention provides a device for moving wafers or substrates that can bath a substrate being moved in active gases that are optionally temperature controlled. The active gases can act to limit or prevent sublimation or decomposition of the wafer surface, and can be temperature controlled to limit or prevent thermal damage. Thereby, previously-necessary temperature ramping of growth chambers can be reduced or eliminated leading to improvement in wafer throughput and system efficiency.Type: GrantFiled: November 12, 2008Date of Patent: April 10, 2012Assignee: SoitecInventors: Michael Albert Tischler, Ronald Thomas Bertram, Jr.
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Patent number: 8133794Abstract: In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a method includes removing a portion of a semiconductor material using an orientation-dependent etch to form a first cavity, a second cavity, wherein the first cavity is isolated from the second cavity, a first protrusion is between the first cavity and the second cavity, and the semiconductor material comprises silicon. The method further includes performing a thermal oxidation to convert a portion of the silicon of the semiconductor material to silicon dioxide and forming a first dielectric material over the first cavity, over the second cavity, over at least a portion of the semiconductor material, and over at least a portion of the first protrusion. Other embodiments are described and claimed.Type: GrantFiled: December 9, 2008Date of Patent: March 13, 2012Assignee: HVVi Semiconductors, Inc.Inventor: Michael Albert Tischler
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Patent number: 8063467Abstract: In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a method includes removing a portion of a semiconductor material to form a first protrusion and a cavity having a boundary that is below a surface of the semiconductor material, wherein the first protrusion extends from the boundary of the cavity. The method further includes forming a non-conformal material over a first portion of the first protrusion using an angled deposition of the non-conformal material, wherein the angle of deposition of the non-conformal material is non-perpendicular to the surface of the semiconductor material. Other embodiments are described and claimed.Type: GrantFiled: December 9, 2008Date of Patent: November 22, 2011Assignee: HVVi Semiconductors, Inc.Inventor: Michael Albert Tischler
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Patent number: 8049297Abstract: In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a method includes removing a portion of a semiconductor material to form a cavity that extends at least about one micron or greater below the surface of the semiconductor material, filling the cavity with a sacrificial material, forming a dielectric material over the sacrificial material and over at least a portion of the surface of the semiconductor material, and removing a portion of the dielectric material to form an opening to expose a portion of the sacrificial material, wherein the opening has a width that is substantially less than a width of the cavity and the dielectric material is rigid or substantially rigid. The method further includes removing the sacrificial material. Other embodiments are described and claimed.Type: GrantFiled: December 9, 2008Date of Patent: November 1, 2011Assignee: HVVi Semiconductors, Inc.Inventor: Michael Albert Tischler
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Patent number: 8048760Abstract: In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a structure includes a dielectric material and a void below a surface of a substrate. The structure further includes a doped dielectric material over the dielectric material, over the first void, wherein at least a portion of the dielectric material is between at least a portion of the substrate and at least a portion of the doped dielectric material. Other embodiments are described and claimed.Type: GrantFiled: July 9, 2010Date of Patent: November 1, 2011Assignee: HVVi Semiconductors, Inc.Inventors: Bishnu Prasanna Gogoi, Michael Albert Tischler
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Publication number: 20110212546Abstract: A semiconductor growth system includes a chamber and a source of electromagnetic radiation. A detector is arranged to detect absorption of radiation from the source by a chloride- based chemical of the reaction chamber. A control system controls the operation of the chamber in response to the absorption of radiation by the chloride-based chemical. The control system controls the operation of the chamber by adjusting a parameter of the reaction chamber.Type: ApplicationFiled: July 21, 2009Publication date: September 1, 2011Inventors: Ronald Thomas Bertram Jr., Chantal Arena, Christiaan J. Werkhoven, Michael Albert Tischler, Vasil Vorsa, Andrew D. Johnson
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Patent number: 7998829Abstract: In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a method includes removing a portion of a semiconductor material using an electrochemical etch to form a first cavity, a second cavity, wherein the first cavity is isolated from the second cavity, a first protrusion is between the first cavity and the second cavity, and the semiconductor material comprises silicon. The method further includes performing a thermal oxidation to convert a portion of the silicon of the semiconductor material to silicon dioxide and forming a first dielectric material over the first cavity, over the second cavity, over at least a portion of the semiconductor material, and over at least a portion of the first protrusion. Other embodiments are described and claimed.Type: GrantFiled: December 9, 2008Date of Patent: August 16, 2011Assignee: HVVi Semiconductors, Inc.Inventor: Michael Albert Tischler
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Patent number: 7888746Abstract: In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a semiconductor structure having a silicon-on-insulator (SOI) substrate and a dielectric region is disclosed. The dielectric region is adjacent to the active layer of the SOI substrate and the dielectric region includes a portion of a buried oxide (BOX) layer of the SOI substrate. At least a portion of the dielectric region extends from a surface of the active layer of the SOI substrate to a depth of at least about three microns or greater below the surface of the active layer. Other embodiments are described and claimed.Type: GrantFiled: December 15, 2006Date of Patent: February 15, 2011Assignee: HVVi Semiconductors, Inc.Inventor: Michael Albert Tischler
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Publication number: 20100273308Abstract: In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a structure includes a dielectric material and a void below a surface of a substrate. The structure further includes a doped dielectric material over the dielectric material, over the first void, wherein at least a portion of the dielectric material is between at least a portion of the substrate and at least a portion of the doped dielectric material. Other embodiments are described and claimed.Type: ApplicationFiled: July 9, 2010Publication date: October 28, 2010Inventors: Bishnu Prasanna Gogoi, Michael Albert Tischler
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Publication number: 20100216316Abstract: This invention provides apparatus, protocols, and methods that permit wafers to be loaded and unloaded in a gas-phase epitaxial growth chamber at high temperatures. Specifically, this invention provides a device for moving wafers or substrates that can bath a substrate being moved in active gases that are optionally temperature controlled. The active gases can act to limit or prevent sublimation or decomposition of the wafer surface, and can be temperature controlled to limit or prevent thermal damage. Thereby, previously-necessary temperature ramping of growth chambers can be reduced or eliminated leading to improvement in wafer throughput and system efficiency.Type: ApplicationFiled: November 12, 2008Publication date: August 26, 2010Applicant: S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIESInventors: Michael Albert Tischler, Ronald Thomas Bertram, JR.
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Patent number: 7777295Abstract: In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a structure includes a dielectric material and a void below a surface of a substrate. The structure further includes a doped dielectric material over the dielectric material, over the first void, wherein at least a portion of the dielectric material is between at least a portion of the substrate and at least a portion of the doped dielectric material. Other embodiments are described and claimed.Type: GrantFiled: December 8, 2008Date of Patent: August 17, 2010Assignee: HVVI Semiconductors, Inc.Inventors: Bishnu Prasanna Gogoi, Michael Albert Tischler
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Publication number: 20090146245Abstract: In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a method includes removing a portion of a semiconductor material to form a cavity that extends at least about one micron or greater below the surface of the semiconductor material, filling the cavity with a sacrificial material, forming a dielectric material over the sacrificial material and over at least a portion of the surface of the semiconductor material, and removing a portion of the dielectric material to form an opening to expose a portion of the sacrificial material, wherein the opening has a width that is substantially less than a width of the cavity and the dielectric material is rigid or substantially rigid. The method further includes removing the sacrificial material. Other embodiments are described and claimed.Type: ApplicationFiled: December 9, 2008Publication date: June 11, 2009Inventor: Michael Albert Tischler