Abstract: In some examples, a battery assembly for an implantable medical device. The battery assembly may include an electrode stack comprising a plurality of electrode plates, wherein the plurality of electrode plates comprises a first electrode plate including a first tab extending from the first electrode plate and a second electrode plate including a second tab extending from the second electrode plate; a spacer between the first tab and the second tab; and a rivet extending through the first tab, second tab, and spacer, wherein the rivet is configured to mechanically attach the first tab, second tab, and spacer to each other.

Abstract: In some examples, a battery assembly for an implantable medical device. The battery assembly may include an electrode stack comprising a plurality of electrode plates, wherein the plurality of electrode plates comprises a first electrode plate including a first tab extending from the first electrode plate and a second electrode plate including a second tab extending from the second electrode plate; a spacer between the first tab and the second tab; and a rivet extending through the first tab, second tab, and spacer, wherein the rivet is configured to mechanically attach the first tab, second tab, and spacer to each other.

Abstract: In some examples, a battery assembly for an implantable medical device. The battery assembly may include an electrode stack comprising a plurality of electrode plates, wherein the plurality of electrode plates comprises a first electrode plate including a first tab extending from the first electrode plate and a second electrode plate including a second tab extending from the second electrode plate; a spacer between the first tab and the second tab; and a rivet extending through the first tab, second tab, and spacer, wherein the rivet is configured to mechanically attach the first tab, second tab, and spacer to each other.

Abstract: The disclosure describes a method of making porous nitrogenized titanium coated substrates. The process includes depositing titanium on a substrate using a glancing angle deposition (GLAD) process and then nitrogenizing the deposited titanium using a thermal or plasma-assisted thermal gaseous nitrogenizing process.

Abstract: A component of an implantable medical device comprises a body comprising at least one external surface, the body comprising at least one of titanium, titanium-based alloys, and composites thereof, and a corrosion-resistant surface region at the at least one external surface, the corrosion-resistant surface region comprising at least one of titanium nitride, dititanium nitride, and a solid solution of nitrogen dissolved in the body, wherein the corrosion-resistant surface region is formed by thermal nitridation of the body.

Abstract: A component of an implantable medical device comprises a body comprising at least one external surface, the body comprising at least one of titanium, titanium-based alloys, and composites thereof, and a corrosion-resistant surface region at the at least one external surface, the corrosion-resistant surface region comprising at least one of titanium nitride, dititanium nitride, and a solid solution of nitrogen dissolved in the body, wherein the corrosion-resistant surface region is formed by thermal nitridation of the body.

Abstract: Methods of preparing an electrode are provided. A metal powder can be sintered onto a portion of a lead wire to form a connection region. An additional metal powder can be de-oxidation sintered onto the connection region to form the electrode. The oxides formed during the de-oxidation sintering are then removed from the electrode.

Abstract: The present teachings provide methods of preparing an anode for use in a high volumetric energy density electrolytic capacitor. A lead wire is de-oxidized and sintered in a valve metal powder compact to form the anode. The de-oxidizing and sintering are conducted in the presence of a reactive metal having a stronger affinity for oxygen than the valve metal powder. A residual reactive metal and at least one reactive metal reaction product are removed from the anode surface with a leaching process. Remaining residual reactive metal and reactive metal reaction products are redistributed by thermal processing. A capacitor containing the anode has an operating voltage greater than 90% of the forming voltage.

Abstract: Methods of preparing an electrode are provided. A metal powder can be sintered onto a portion of a lead wire to form a connection region. An additional metal powder can be de-oxidation sintered onto the connection region to form the electrode. The oxides formed during the de-oxidation sintering are then removed from the electrode.

Abstract: Methods of preparing an electrode are provided. A metal lead wire is pre-treated to facilitate bonding of the lead wire to a metal powder during subsequent de-oxidation sintering. A connection region can be formed by directly contacting the metal lead wire with a liquid reactive metal. After removal of resultant oxides, an additional metal powder can be de-oxidation sintered onto the connection region to form the electrode. The oxides formed during the de-oxidation sintering are then removed from the electrode.

Abstract: A magnetic field strength detector includes a magnetic field sensing element that outputs voltage as a function of magnetic field strength. In some embodiments, the magnetic field sensing element comprises a coil, and voltage is induced across the coil as a function of the magnetic field strength. A magnetic field strength detector also includes an indicator that alters as a function of the voltage output by the magnetic field sensing element when the magnetic field strength exceeds a threshold. The alteration is substantially irreversible and, in some embodiments, visible. The detector may be used to, for example, measure the strength of a magnetic field generated by a degaussing device, or to confirm that a particular medium was exposed to a magnetic field with a strength adequate to degauss the medium.

Abstract: Perpendicular magnetic media are described for use in magnetic recording and data storage. Seed layer compositions are described which can facilitate perpendicular magnetic anisotropy in subsequently deposited magnetic layers. In particular, nickel-iron-chromium (NiFeCr) alloys or nickle-chromium (NiCr) alloys can be used as seed layers which cause a subsequently multi-layered magnetic stack to assume perpendicular magnetic anisotropy. In this manner, high perpendicular magnetic anisotropy can be achieved and storage densities of media may be increased.

Abstract: Perpendicular magnetic media are described for use in magnetic recording and data storage. Seed layer compositions are described which can facilitate perpendicular magnetic anisotropy in subsequently deposited magnetic layers. In particular, nickel-iron-chromium (NiFeCr) alloys or nickle-chromium (NiCr) alloys can be used as seed layers which cause a subsequently multi-layered magnetic stack to assume perpendicular magnetic anisotropy. In this manner, high perpendicular magnetic anisotropy can be achieved and storage densities of media may be increased.

Abstract: This invention presents a method and structure for magnetic spin valves. The spin valve structure includes a first ferromagnetic layer separated from a second ferromagnetic layer by a non-magnetic layer. The spin valve structure also includes a first specular scattering layer separated from a second specular scattering layer by the first ferromagnetic layer, the non-magnetic layer, and the second ferromagnetic layer. The first ferromagnetic layer can include a free layer and the non-magnetic layer can include a spacer layer. The second ferromagnetic layer can include a pinned layer or a reference layer. The specular scattering layers can include a material such as Y2O3, HfO2, MgO, Al2O3, NiO, Fe2O3, and Fe3O4. The specular scattering layers can also be used in a SAF structure. In the SAF structure, the antiferromagnetic coupling material can be co-deposited with the second specular scattering layer.

Abstract: This invention presents a method and structure for magnetic spin valves. The spin valve structure includes a first ferromagnetic layer separated from a second ferromagnetic layer by a non-magnetic layer. The spin valve structure also includes a first specular scattering layer separated from a second specular scattering layer by the first ferromagnetic layer, the non-magnetic layer, and the second ferromagnetic layer. The first ferromagnetic layer can include a free layer and the non-magnetic layer can include a spacer layer. The second ferromagnetic layer can include a pinned layer or a reference layer. The specular scattering layers can include a material such as Y2O3, HfO2, MgO, Al2O3, NiO, Fe2O3, and Fe3O4. The specular scattering layers can also be used in a SAF structure. In the SAF structure, the antiferromagnetic coupling material can be co-deposited with the second specular scattering layer.

Abstract: This invention presents a method and structure for magnetic spin valves. The spin valve structure includes a first ferromagnetic layer separated from a second ferromagnetic layer by a non-magnetic layer. The spin valve structure also includes a first specular scattering layer separated from a second specular scattering layer by the first ferromagnetic layer, the non-magnetic layer, and the second ferromagnetic layer. The first ferromagnetic layer can include a free layer and the non-magnetic layer can include a spacer layer. The second ferromagnetic layer can include a pinned layer or a reference layer. The specular scattering layers can include a material such as Y2O3, HfO2, MgO, Al2O3, NiO, Fe2O3, and Fe3O4. The specular scattering layers can also be used in a SAF structure. In the SAF structure, the antiferromagnetic coupling material can be co-deposited with the second specular scattering layer.

Abstract: Playback transducers for patterned media systems comprise temperature sensitive resistors, including thermistors and resistance temperature detectors. The transducers are typically thin film depositions mounted on a slider for flying head application. Possible configurations are generally V-shaped, may involve parallel or perpendicular recording geometry, and are conceptually similar to (but simpler in construction than) magnetoresistive or giantmagnetoresistive thin film transducers. The transducers may incorporate supplementary heating elements and/or coatings to optimize performance.

Abstract: This invention presents a method and structure for magnetic spin valves. The spin valve structure includes a first ferromagnetic layer separated from a second ferromagnetic layer by a non-magnetic layer. The spin valve structure also includes a first specular scattering layer separated from a second specular scattering layer by the first ferromagnetic layer, the non-magnetic layer, and the second ferromagnetic layer. The first ferromagnetic layer can include a free layer and the non-magnetic layer can include a spacer layer. The second ferromagnetic layer can include a pinned layer or a reference layer. The specular scattering layers can include a material such as Y2O3, HfO2, MgO, Al2O3, NiO, Fe2O3, and Fe3O4. The specular scattering layers can also be used in a SAF structure. In the SAF structure, the antiferromagnetic coupling material can be co-deposited with the second specular scattering layer.

Abstract: A giant magnetoresistive spin valve read sensor includes a bilayer seed layer and a stack of films. The bilayer seed layer includes a TaN seed layer and a NiFeCr seed layer. The stack of films includes a free layer adjacent the NiFeCr seed layer, a pinning layer, a pinned layer positioned between the free layer and the pinning layer, and a spacer layer positioned between the free layer and the pinned layer. The bilayer seed layer is used to promote the texture and grain growth of each of the layers subsequently grown upon the seed layer. The free layer has a rotatable magnetic moment, while the pinned layer has a fixed magnetic moment. The resistance of the giant magnetoresistive spin valve read sensor varies as a function of an angle formed between the magnetization of the free layer and the magnetization of the pinned layer.

Abstract: A magnetoresistive element has a height that extends from the air-bearing surface of a head. The height is determined by a slot in the head extending from the air-bearing surface adjacent the sensor portion at an acute angle to both the air bearing surface and the height of the magnetoresistive element to separate the magnetoresistive element into the sensor portion and a dormant portion. Alternatively, the height is determined by a recess of design depth in the magnetoresistive element at the air bearing surface. Alternatively, the height of the magnetoresistive element is determined by a stepped thickness to the first and second bias current carrying contacts along the height of the magnetoresistive element.