Abstract: A method comprises forming a single-crystal-like metal layer on a metal seed layer, the metal seed layer formed on a carrier wafer. The method comprises forming a first bonding layer on the single-crystal-like metal layer. The method also comprises forming a second bonding layer on a dielectric layer of a target substrate, the target substrate comprising one or more recording head subassemblies. The bonding layers may include diffusion layers or dielectric bonding layers. The method further comprises flipping and joining the carrier wafer with the target substrate such that the first and second diffusion layers are bonded and the single-crystal-like metal layer is integrated with the recording head as a near-field transducer.

Abstract: A near-field transducer or heat sink is formed via a first process. The near-field transducer or heat sink is transfer-printed to a read/write head via a second process.

Abstract: A method comprises forming a single-crystal-like metal layer on a metal seed layer, the metal seed layer formed on a carrier wafer. The method comprises forming a first bonding layer on the single-crystal-like metal layer. The method also comprises forming a second bonding layer on a dielectric layer of a target substrate, the target substrate comprising one or more recording head subassemblies. The bonding layers may include diffusion layers or dielectric bonding layers. The method further comprises flipping and joining the carrier wafer with the target substrate such that the first and second diffusion layers are bonded and the single-crystal-like metal layer is integrated with the recording head as a near-field transducer.

Abstract: A method includes forming a single-crystal-like metal layer on a metal seed layer, the metal seed layer formed on a sacrificial wafer. An anchor layer is formed on the single-crystal-like metal layer. The single-crystal-like metal layer is separated from the sacrificial wafer via the anchor layer. The single-crystal-like metal layer is transported via the anchor layer to a target substrate having one or more recording head subassemblies. The single-crystal-like metal layer is joined with the recording head, the single-crystal-like metal layer being integrated with the recording head as a near-field transducer.

Abstract: A method of forming a thin film structure involves performing one or more repetitions to form a template on a wafer. The repetitions include: depositing a layer of a template material to a first thickness T1; and ion beam milling the layer of the template material to remove thickness T2, where T2<T1, resulting in a layer of the template material with thickness T1?T2. The ion beam milling is performed at a channeling angle relative to a deposition plane of the wafer, the channeling angle defined relative to a channeling direction of a crystalline microstructure of the template material. After the repetitions, additional material is deposited on the template to form a final structure. The additional material has a same crystalline microstructure as the template material.

Abstract: A thin film structure (e.g., a near-field transducer), includes a first surface parallel to a substrate on which the thin film structure is deposited and two other surfaces orthogonal to the first surface. The first surface and the two other surfaces have respective first, second, and third selected plane orientations with respective first, second, and third atomic packing factors. The first, second, and third selected plane orientations are selected to maximize an average of the first, second, and third atomic packing factors.

Abstract: A near-field transducer or heat sink is formed via a first process. The near-field transducer or heat sink is transfer-printed to a read/write head via a second process.

Abstract: A recording head includes a near-field transducer proximate a media-facing surface. The near-field transducer comprises an aperture portion surrounded by walls of plasmonic material, the walls oriented normal to the media-facing surface. A notch protrudes within the aperture. The notch comprises at least one of Rh and Ir. A write pole is proximate the near-field transducer. The write pole has a back surface facing away from the media-facing surface and an aperture-facing surface proximate the aperture.

Abstract: A recording head includes a near-field transducer proximate a media-facing surface. The near-field transducer comprises an aperture portion surrounded by walls of plasmonic material, the walls oriented normal to the media-facing surface. A notch protrudes within the aperture. The notch comprises at least one of Rh and Ir. A write pole is proximate the near-field transducer. The write pole has a back surface facing away from the media-facing surface and an aperture-facing surface proximate the aperture.

Abstract: A recording head includes a near-field transducer proximate a media-facing surface. The near-field transducer comprises an aperture portion surrounded by walls of plasmonic material, the walls oriented normal to the media-facing surface. A notch protrudes within the aperture. The notch comprises at least one of Rh and Ir. A write pole is proximate the near-field transducer. The write pole has a back surface facing away from the media-facing surface and an aperture-facing surface proximate the aperture.

Abstract: A recording head includes a near-field transducer proximate a media-facing surface. The near-field transducer comprises an aperture portion surrounded by walls of plasmonic material, the walls oriented normal to the media-facing surface. A notch protrudes within the aperture. The notch comprises at least one of Rh and Ir. A write pole is proximate the near-field transducer. The write pole has a back surface facing away from the media-facing surface and an aperture-facing surface proximate the aperture.

Abstract: A recording head includes a near-field transducer proximate a media-facing surface. The near-field transducer comprises an aperture portion surrounded by walls of plasmonic material, the walls oriented normal to the media-facing surface. A notch protrudes within the aperture. The notch comprises at least one of Rh and Ir. A write pole is proximate the near-field transducer. The write pole has a back surface facing away from the media-facing surface and an aperture-facing surface proximate the aperture.

Abstract: A near field transducer includes gold and at least one dopant. The dopant can include at least one of: Cu, Rh, Ru, Ag, Ta, Cr, Al, Zr, V, Pd, Ir, Co, W, Ti, Mg, Fe, or Mo. The dopant concentration may be in a range from 0.5% and 30%. The dopant can be a nanoparticle oxide of V, Zr, Mg, Ca, Al, Ti, Si, Ce, Y, Ta, W, or Th, or a nitride of Ta, Al, Ti, Si, In, Fe, Zr, Cu, W or B.

Abstract: A recording head includes a near-field transducer proximate a media-facing surface. The near-field transducer comprises an aperture portion surrounded by walls of plasmonic material, the walls oriented normal to the media-facing surface. A notch protrudes within the aperture. The notch comprises at least one of Rh and Ir. A write pole is proximate the near-field transducer. The write pole has a back surface facing away from the media-facing surface and an aperture-facing surface proximate the aperture.

Abstract: A near-field transducer includes first and second stacked base portions having a common outline shape. The second base portion is proximate alight delivery structure. A peg extends from the first base portion towards a media-facing surface. The peg includes a material that is more thermally robust than a plasmonic material of the base portion. The peg has a peg thickness that is less than a thickness of the first base portion. The first base portion has a first recess proximate the peg. The first recess separates the first base portion from the media-facing surface and exposes at least a top side of the peg.

Abstract: A device that includes a near field transducer (NFT); at least one cladding layer adjacent the NFT; and a discontinuous metal layer positioned between the NFT and the at least one cladding layer.

Abstract: A near-field transducer includes first and second stacked base portions having a common outline shape. The second base portion is proximate alight delivery structure. A peg extends from the first base portion towards a media-facing surface. The peg includes a material that is more thermally robust than a plasmonic material of the base portion. The peg has a peg thickness that is less than a thickness of the first base portion. The first base portion has a first recess proximate the peg. The first recess separates the first base portion from the media-facing surface and exposes at least a top side of the peg.

Abstract: Thermal energy is generated within an optical NFT when in operation within a HAMR head. A heat-sink assembly within the HAMR head extracts thermal energy from the optical NFT and transmits the thermal energy via convection to air surrounding the HAMR head, radiation to surfaces adjacent to the HAMR head, and/or conduction to other parts of the HAMR head. The thermal energy generated within the optical NFT is conducted to the heat-sink. An air-bearing surface of the heat-sink convectively transfers at least some of the thermal energy to air passing between the air-bearing surface and a surface of an adjacent magnetic medium. Further, some of the thermal energy may also radiatively transfer from the air-bearing surface to the magnetic medium.

Abstract: A near field transducer with a peg region, an enlarged region disposed adjacent the peg region, and a barrier material disposed between the peg region and the enlarged region. The barrier material reduces or eliminates interdiffusion of material between the peg region and the enlarged region.

Abstract: Example embodiments include an apparatus that has a piezoelectric contact sensor. The piezoelectric contact sensor includes a semiconductor device having a semiconductor material that defines a channel through which current can flow. The piezoelectric contact sensor also includes a piezoelectric element coupled to the semiconductor material. The semiconductor material is configured to modulate the current channel in response to compressive stress waves at the contact sensor. Other example embodiments include an apparatus that has a slider having an air-bearing surface, a write head integral to the slider, and a piezoelectric contact sensor that includes a semiconductor device and a piezoelectric element.