Patents by Inventor Michael Feldbaum
Michael Feldbaum has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20070245557Abstract: A method for forming a via in an alumina protective layer on a structure such as a magnetic write head for use in perpendicular magnetic recording. A substrate such as an alumina fill layer, magnetic shaping layer, etc. is formed with region having a contact pad formed therein. A structure such as a magnetic pole, and or magnetic trailing shield, is formed over the substrate and is covered with a thick layer of alumina. The alumina can be applied by a high deposition rate process that does not form voids or seams in the alumina layer. The alumina layer can then be planarized by a chemical mechanical polishing process (CMP) and then a mask structure, such as a photoresist mask, is formed over the alumina layer. The mask structure is formed with an opening disposed over the contact pad. A reactive ion mill is then performed to remove portions of the alumina layer that are exposed at the opening in the mask, thereby forming a via in the alumina layer.Type: ApplicationFiled: April 25, 2006Publication date: October 25, 2007Inventors: Amanda Baer, Hamid Balamane, Michael Feldbaum, Ming Jiang, Aron Pentek
-
Publication number: 20070245544Abstract: A method for making a write pole in a perpendicular magnetic recording write head uses a metal mask to pattern the primary resist and only ion milling during the subsequent patterning steps. A layer of primary resist is deposited over the magnetic write pole material and a metal mask layer is deposited on the primary resist layer. An imaging resist layer is formed on the metal mask layer and lithographically patterned generally in the desired shape of the write pole. Ion milling without a reactive gas is then performed over the imaging resist pattern to pattern the underlying metal mask layer, which is then used as the mask to define the shape of the primary resist pattern. Ion milling with oxygen is then performed over the metal mask pattern to pattern the underlying primary resist. Ion milling without a reactive gas is then performed over the primary resist pattern to form the underlying write pole.Type: ApplicationFiled: April 25, 2006Publication date: October 25, 2007Applicant: HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V.Inventors: Donald Allen, Amanda Baer, Michael Feldbaum, Hung-Chin Guthrie, Aron Pentek
-
Patent number: 7275306Abstract: An improved damascene method of forming a write coil of a magnetic head. The method includes the steps of forming a hard mask layer over an insulator layer; forming a photoresist layer over the hard mask layer; performing an image patterning process to produce a write coil pattern in the photoresist layer; etching to remove portions of the hard mask layer in accordance with the write coil pattern; etching to remove portions of the insulator layer in accordance with the write coil pattern; etching to remove the remaining portion of the etched hard mask layer; after removing the etched hard mask layer, electroplating a material within the etched portion of the insulator material; and performing a chemical-mechanical polishing (CMP) process over the electroplated material. By removing the remainder of the hard mask material before the CMP, the quality of the CMP is improved.Type: GrantFiled: December 12, 2003Date of Patent: October 2, 2007Assignee: Hitachi Global Storage Technologies Netherlands B.V.Inventors: Donald Giles Allen, Richard Jule Contreras, Michael Feldbaum, Murali Ramasubramanian
-
Publication number: 20070081278Abstract: A magnetic head having non-GMR shunt for perpendicular recording and method for making magnetic head having non-GMR shunt for perpendicular recording is disclosed. A shunt is provided for shunting charge from a read sensor. The shunt is formed co-planar with the read sensor and is fabricated using non-GMR materials.Type: ApplicationFiled: October 11, 2005Publication date: April 12, 2007Inventors: Michael Feldbaum, Quang Le, Edward Lee, Neil Robertson, Charles Seegel
-
Patent number: 7159302Abstract: A method for manufacturing a write head having a small write pole tip that emits magnetic flux sufficient for effective perpendicular recording. The method creates a leading edge taper (LET) between the write pole tip and a magnetic flux guide to create a sufficient magnetic flux in the write pole. The LET is fabricated by ion milling away a sacrificial striated material whose layers have different rates of ion milling. The top layer of material thus mills away faster than lower layers, creating the required tapering of a negative mold. An endpoint material stops the milling. The LET magnetic material is then spattered into the negative mold, resulting in a well defined taper of magnetic flux shaping material extending the magnetic flux guide to the write pole tip, such that the write pole tip is able to emit sufficient magnetic flux for perpendicular recording.Type: GrantFiled: March 31, 2004Date of Patent: January 9, 2007Assignee: Hitachi Global Storage Technologies Netherlands B.V.Inventors: Michael Feldbaum, Quang Le
-
Publication number: 20060231523Abstract: A perpendicular write head includes a beveled main pole having corners defining a track width and having a planarized surface and encapsulated on either side thereof and below by an alumina layer, the alumina layer having a polished surface and extending above the main pole on either side thereof as steps.Type: ApplicationFiled: June 14, 2006Publication date: October 19, 2006Inventors: Amanda Baer, Hamid Balamane, Michael Feldbaum, Ming Jiang, Aron Pentek, Neil Robertson, Sue Zhang
-
Publication number: 20060218776Abstract: A magnetic head fabrication process in which a stencil layer is deposited upon a plurality of sensor layers. A photoresist mask in the desired read track width is fabricated upon the stencil layer. A reactive ion milling step is then conducted to remove the unmasked portions of the stencil layer. Where the stencil layer is composed of an organic compound, such as Duramide and/or diamond-like-carbon, a reactive ion milling step utilizing oxygen species produces a stencil of the present invention having exceptionally straight side walls with practically no undercuts. Thereafter, an ion milling step is undertaken in which the sensor layers that are not covered by the stencil are removed. The accurately formed stencil results in correspondingly accurately formed side walls of the remaining central sensor layers. A magnetic head sensor structure having a desired read track width and accurately formed side walls is thus fabricated.Type: ApplicationFiled: March 30, 2005Publication date: October 5, 2006Inventors: Michael Feldbaum, Wipul Jayasekara, Mustafa Pinarbasi
-
Publication number: 20060168794Abstract: A method for constructing a magnetoresistive sensor that avoids shadowing effects of a mask structure during sensor definition. The method includes the use of an antireflective coating (ARC) and a photosensitive mask deposited there over. The photosensitive mask is formed to cover a desired sensor area, leaving non-sensor areas exposed. A reactive ion etch is performed to transfer the pattern of the photosensitive mask onto the underlying ARC layer. The reactive ion etch (RIE) is performed with a relatively high amount of platen power. The higher platen power increases ion bombardment of the wafer, thereby increasing the physical (ie mechanical) component of material removal relative to the chemical component. This increase in the physical component of material removal result in an increased rate of removal of the photosensitive mask material relative to the ion mill resistant mask.Type: ApplicationFiled: January 28, 2005Publication date: August 3, 2006Inventors: Richard Contreras, Michael Feldbaum, Mustafa Pinarbasi
-
Patent number: 7075094Abstract: A system for improving drift compensation for ion mill applications defines a reference step for purposes of time duration. The reference step is controlled by an end point detector and monitored for use with subsequent process steps. The time duration for a subsequent step is adjusted as a percentage of the reference step. A time scaling factor determines the actual duration of the subsequent step. Rather than directly using times of step duration, the system uses a percentage of the reference step for the latter step. The duration of the reference step varies depending on the tool drift. The overall duration is changed in the same proportion as the duration of the reference step, and thereby compensates for the influence of drift on the end product.Type: GrantFiled: August 30, 2004Date of Patent: July 11, 2006Assignee: Hitachi Global Storage Technologies Netherlands B.V.Inventors: Michael Feldbaum, Hung-Chin Guthrie, Wipul Pemsiri Jayasekara, Aron Pentek
-
Patent number: 7030035Abstract: To remove unwanted electrostatic charge from a substrate or substrate clamping mechanism in a plasma processing chamber following the plasma processing of the substrate, the process of shutting down the RF power supply is altered. Specifically, the present invention is a stepped RF power shut down sequence in which the RF power is lowered in a first step from full power to approximately 5 to 10 watts for a short period of time, such as approximately 1 second, and thereafter the RF power is turned off. As a result of this RF power shut down sequence, with its intermediate step, the plasma during the intermediate step acts to neutralize or discharge the electrostatic charge that has built up upon the wafer and/or clamping mechanism during full power operation. When the electrostatic charge has been removed, the wafer sticking problem is resolved.Type: GrantFiled: May 14, 2004Date of Patent: April 18, 2006Assignee: Hitachi Global Storage Technologies Netherlands, B.V.Inventors: Donald G. Allen, Richard Jule Contreras, Michael Feldbaum, Dominic Frank Truchetta
-
Publication number: 20060043280Abstract: A system for improving drift compensation for ion mill applications defines a reference step for purposes of time duration. The reference step is controlled by an end point detector and monitored for use with subsequent process steps. The time duration for a subsequent step is adjusted as a percentage of the reference step. A time scaling factor determines the actual duration of the subsequent step. Rather than directly using times of step duration, the system uses a percentage of the reference step for the latter step. The duration of the reference step varies depending on the tool drift. The overall duration is changed in the same proportion as the duration of the reference step, and thereby compensates for the influence of drift on the end product.Type: ApplicationFiled: August 30, 2004Publication date: March 2, 2006Applicant: Hitachi Global Storage Technologies Netherlands B.V.Inventors: Michael Feldbaum, Hung-Chin Guthrie, Wipul Jayasekara, Aron Pentek
-
Publication number: 20060002022Abstract: A first magnetic shield layer of the read head sensor is deposited upon a slider substrate surface. A patterned photoresist is then photolithographically fabricated upon the first magnetic shield layer with openings that are formed alongside the location at which the read sensor will be fabricated. An ion milling step is performed to create pockets within the surface of the magnetic shield layer at the location of the openings in the photoresist layer. The photoresist layer is then removed, and a fill layer is deposited across the surface of the magnetic shield layer in a depth greater than the depth of the pocket. Thereafter, a polishing step is conducted to remove portions of the fill layer down to the surface of the magnetic shield layer. A G1 insulation layer is deposited and a magnetic head sensor element is then fabricated upon the insulation layer.Type: ApplicationFiled: June 30, 2004Publication date: January 5, 2006Inventors: Michael Feldbaum, John Kim, Murali Ramasubramanian, Howard Zolla
-
Publication number: 20050255705Abstract: To remove unwanted electrostatic charge from a substrate or substrate clamping mechanism in a plasma processing chamber following the plasma processing of the substrate, the process of shutting down the RF power supply is altered. Specifically, the present invention is a stepped RF power shut down sequence in which the RF power is lowered in a first step from full power to approximately 5 to 10 watts for a short period of time, such as approximately 1 second, and thereafter the RF power is turned off. As a result of this RF power shut down sequence, with its intermediate step, the plasma during the intermediate step acts to neutralize or discharge the electrostatic charge that has built up upon the wafer and/or clamping mechanism during full power operation. When the electrostatic charge has been removed, the wafer sticking problem is resolved.Type: ApplicationFiled: May 14, 2004Publication date: November 17, 2005Inventors: Donald Allen, Richard Contreras, Michael Feldbaum, Dominic Truchetta
-
Publication number: 20050219744Abstract: A method for manufacturing a write head having a small write pole tip that emits magnetic flux sufficient for effective perpendicular recording. The method creates a leading edge taper (LET) between the write pole tip and a magnetic flux guide to create a sufficient magnetic flux in the write pole. The LET is fabricated by ion milling away a sacrificial striated material whose layers have different rates of ion milling. The top layer of material thus mills away faster than lower layers, creating the required tapering of a negative mold. An endpoint material stops the milling. The LET magnetic material is then spattered into the negative mold, resulting in a well defined taper of magnetic flux shaping material extending the magnetic flux guide to the write pole tip, such that the write pole tip is able to emit sufficient magnetic flux for perpendicular recording.Type: ApplicationFiled: March 31, 2004Publication date: October 6, 2005Inventors: Michael Feldbaum, Quang Le
-
Publication number: 20050125990Abstract: An improved damascene method of forming a write coil of a magnetic head includes forming a hard mask layer over an insulator layer; forming a photoresist layer over the hard mask layer; performing an image patterning process to produce a write coil pattern in the photoresist layer; etching to remove portions of the hard mask layer in accordance with the write coil pattern; etching to remove portions of the insulator layer in accordance with the write coil pattern; etching to remove the remaining portion of the etched hard mask layer; electroplating a material comprising copper (Cu) within the etched portion of the insulator material; and performing a chemical-mechanical polishing (CMP) process over the resulting structure. By removing the remainder of the hard mask material before the CMP, the quality of the CMP is improved.Type: ApplicationFiled: December 12, 2003Publication date: June 16, 2005Inventors: Donald Allen, Richard Contreras, Michael Feldbaum, Murali Ramasubramanian
-
Patent number: 6383938Abstract: A method of plasma etching of silicon that utilizes the plasma to provide laterally defined recess structures through a mask. The method is based on the variation of the plasma parameters to provide a well-controlled anisotropic etch, while achieving a very high etch rate, and a high selectivity with respect to a mask. A mixed gas is introduced into the vacuum chamber after the chamber is evacuated, and plasma is generated within the chamber. The substrate's surface is exposed to the plasma. Power sources are used for formation of the plasma discharge. An integrated control system is used to modulate the plasma discharge power and substrate polarization voltage levels.Type: GrantFiled: April 21, 1999Date of Patent: May 7, 2002Assignee: AlcatelInventors: Tamarak Pandhumsoporn, Kevin Yu, Michael Feldbaum, Michel Puech
-
Publication number: 20010044213Abstract: A method of plasma etching of silicon that utilizes the plasma to provide laterally defined recess structures through a mask. The method is based on the variation of the plasma parameters to provide a well-controlled anisotropic etch, while achieving a very high etch rate, and a high selectivity with respect to a mask. A mixed gas is introduced into the vacuum chamber after the chamber is evacuated, and plasma is generated within the chamber. The substrate's surface is exposed to the plasma. Power sources are used for formation of the plasma discharge. An integrated control system is used to modulate the plasma discharge power and substrate polarization voltage levels.Type: ApplicationFiled: April 21, 1999Publication date: November 22, 2001Inventors: TAMARAK PANDHUMSOPORN, KEVIN YU, MICHAEL FELDBAUM, MICHEL PUECH