Abstract: Various carrier ring designs and configurations to control an amount of deposition at a wafer's front side and bevel edge are provided. The carrier ring designs can control the amount of deposition at various locations of the wafer while deposition is performed on the wafer's back side, with no deposition desired on the front side of the wafer. These locations include front side, edge, and back side of bevel; and front and back side of the wafer. Edge profiles of the carrier rings are designed to control flow of process gases, flow of front side purge gas, and plasma effects. In some designs, through holes are added to the carrier rings to control gas flows. The edge profiles and added features can reduce or eliminate deposition at the wafer's front side and bevel edge.

Abstract: Various carrier ring designs and configurations to control an amount of deposition at a wafer's front side and bevel edge are provided. The carrier ring designs can control the amount of deposition at various locations of the wafer while deposition is performed on the wafer's back side, with no deposition desired on the front side of the wafer. These locations include front side, edge, and back side of bevel; and front and back side of the wafer. Edge profiles of the carrier rings are designed to control flow of process gases, flow of front side purge gas, and plasma effects. In some designs, through holes are added to the carrier rings to control gas flows. The edge profiles and added features can reduce or eliminate deposition at the wafer's front side and bevel edge.

Abstract: A substrate processing system includes a showerhead pedestal, a carrier ring, a showerhead, and an RF source. The showerhead pedestal includes a top surface defining a first plurality of through holes configured to output a plasma gas mixture. The carrier ring is arranged on the top surface of the showerhead pedestal to support a substrate at a predetermined distance from the top surface of the showerhead pedestal. The showerhead is arranged above the carrier ring and includes a body defining a plenum, a recessed region located on a substrate-facing surface of the body, and a second plurality of through holes extending from the plenum through the substrate-facing surface of the body in the recessed region to disperse a purge gas onto a top surface of the substrate. The RF source is configured to strike plasma between a bottom surface of the substrate and the top surface of the showerhead pedestal.

Abstract: Various embodiments include apparatuses, systems, and methods for using a remote-plasma cleaning system with a directional-flow device for concurrently cleaning multiple processing stations in a processing tool used in the semiconductor and allied fields. In one example, an apparatus used to perform a remote-plasma clean (RPC) in a multi-station process chamber is disclosed and includes an RPC directional-flow device that is to be coupled between an RPC reactor and the process chamber. The RPC directional-flow device includes a number of ramped gas-diversion areas to direct at least a radical species generated by the RPC reactor to a separate one of the processing stations. An incoming cleaning-gas diversion hub is to receive the radical species and distribute at least the species substantially-uniformly to each of the of the ramped gas-diversion areas. Other apparatuses, systems, and methods are disclosed.

Abstract: A pedestal assembly including a pedestal for supporting a substrate. A central shaft positions the pedestal at a height during operation. A ring is placed along a periphery of the pedestal. A ring adjuster subassembly includes an adjuster flange disposed around a middle section of the central shaft. The subassembly includes a sleeve connected to the adjuster flange and extending from the adjuster flange to an adjuster plate disposed under the pedestal. The subassembly includes ring adjuster pins connected to the adjuster plate and extending vertically from the adjuster plate. Each of the ring adjuster pins being positioned on the adjuster plate at locations adjacent to and outside of a pedestal diameter. The ring adjuster pins contacting an edge undersurface of the ring. The adjuster flange coupled to at least three adjuster actuators for defining an elevation and tilt of the ring relative to a top surface of the pedestal.

Abstract: A pedestal assembly including a pedestal for supporting a substrate. A central shaft positions the pedestal at a height during operation. A ring is placed along a periphery of the pedestal. A ring adjuster subassembly includes an adjuster flange disposed around a middle section of the central shaft. The subassembly includes a sleeve connected to the adjuster flange and extending from the adjuster flange to an adjuster plate disposed under the pedestal. The subassembly includes ring adjuster pins connected to the adjuster plate and extending vertically from the adjuster plate. Each of the ring adjuster pins being positioned on the adjuster plate at locations adjacent to and outside of a pedestal diameter. The ring adjuster pins contacting an edge undersurface of the ring. The adjuster flange coupled to at least three adjuster actuators for defining an elevation and tilt of the ring relative to a top surface of the pedestal.

Abstract: Various carrier ring designs and configurations to control an amount of deposition at a wafer's front side and bevel edge are provided. The carrier ring designs can control the amount of deposition at various locations of the wafer while deposition is performed on the wafer's back side, with no deposition desired on the front side of the wafer. These locations include front side, edge, and back side of bevel; and front and back side of the wafer. Edge profiles of the carrier rings are designed to control flow of process gases, flow of front side purge gas, and plasma effects. In some designs, through holes are added to the carrier rings to control gas flows. The edge profiles and added features can reduce or eliminate deposition at the wafer's front side and bevel edge.

Abstract: Various embodiments include apparatuses, systems, and methods for using a remote-plasma cleaning system with a directional-flow device for concurrently cleaning multiple processing stations in a processing tool used in the semiconductor and allied fields. In one example, an apparatus used to perform a remote-plasma clean (RPC) in a multi-station process chamber is disclosed and includes an RPC directional-flow device that is to be coupled between an RPC reactor and the process chamber. The RPC directional-flow device includes a number of ramped gas-diversion areas to direct at least a radical species generated by the RPC reactor to a separate one of the processing stations. An incoming cleaning-gas diversion hub is to receive the radical species and distribute at least the species substantially-uniformly to each of the of the ramped gas-diversion areas. Other apparatuses, systems, and methods are disclosed.

Abstract: Various carrier ring designs and configurations to control an amount of deposition at a wafer's front side and bevel edge are provided. The carrier ring designs can control the amount of deposition at various locations of the wafer while deposition is performed on the wafer's back side, with no deposition desired on the front side of the wafer. These locations include front side, edge, and back side of bevel; and front and back side of the wafer. Edge profiles of the carrier rings are designed to control flow of process gases, flow of front side purge gas, and plasma effects. In some designs, through holes are added to the carrier rings to control gas flows. The edge profiles and added features can reduce or eliminate deposition at the wafer's front side and bevel edge.

Abstract: A deposition tool including a processing chamber, a substrate holder for holding a substrate to be processed within the processing chamber and a showerhead having a faceplate for distributing a first and/or second gas(es) and/or vapor(s) into the processing chamber. The showerhead includes first and second plenums, first and second chambers, each provided behind a backside of the faceplate, and first and second sets of holes, both formed through the faceplate of the showerhead, and in fluid communication with the first and second chambers respectively.

Abstract: A pedestal assembly including a pedestal for supporting a substrate. A central shaft positions the pedestal at a height during operation. A ring is placed along a periphery of the pedestal. A ring adjuster subassembly includes an adjuster flange disposed around a middle section of the central shaft. The subassembly includes a sleeve connected to the adjuster flange and extending from the adjuster flange to an adjuster plate disposed under the pedestal. The subassembly includes ring adjuster pins connected to the adjuster plate and extending vertically from the adjuster plate. Each of the ring adjuster pins being positioned on the adjuster plate at locations adjacent to and outside of a pedestal diameter. The ring adjuster pins contacting an edge undersurface of the ring. The adjuster flange coupled to at least three adjuster actuators for defining an elevation and tilt of the ring relative to a top surface of the pedestal.

Abstract: A substrate lift pin assembly includes a tubular support member connected to a bottom of a pedestal beneath a lift pin through-hole. The tubular support member has an interior cavity and an end closure with a cartridge through-hole extending through the end closure. A cartridge member includes a lift pin holder portion and a plunger portion. The lift pin holder portion is located inside of the interior cavity of the tubular support member. The plunger portion extends through the cartridge through-hole of the end closure of the tubular support member. A lift pin extends through the lift pin through-hole and connects to the lift pin holder portion of the cartridge member. A handle member connects to the plunger portion of the cartridge member at a location near a distal end of the plunger portion relative to the tubular support member. The handle member is configured to engage a lifting mechanism.

Abstract: A substrate lift pin assembly includes a tubular support member connected to a bottom of a pedestal beneath a lift pin through-hole. The tubular support member has an interior cavity and an end closure with a cartridge through-hole extending through the end closure. A cartridge member includes a lift pin holder portion and a plunger portion. The lift pin holder portion is located inside of the interior cavity of the tubular support member. The plunger portion extends through the cartridge through-hole of the end closure of the tubular support member. A lift pin extends through the lift pin through-hole and connects to the lift pin holder portion of the cartridge member. A handle member connects to the plunger portion of the cartridge member at a location near a distal end of the plunger portion relative to the tubular support member. The handle member is configured to engage a lifting mechanism.

Abstract: A scan speed procedure and method wherein a minimum radiation exposure period is determined on an object by object basis for a transmission study. Two transmission scans are performed including a prescan followed by a second transmission scan phase. The first transmission prescan is performed using a radiation source over the object. This prescan is of a rapid and predetermined duration (Tp). A resultant count density associated with the object is then generated and examined. The portion having the smallest count density (Cm) is determined and a value (Co) representing the minimum required number of counts for transmission study is given. From the above, a transmission period (Ts) is determined by the system and the second transmission scan phase is performed for the duration Ts using a multi-pass scan phase.

Abstract: A method and apparatus for collecting transmission information utilizing a large field of view of a detector and for collecting emission data using a small field of view window of the same detector. The system employs the large field of view of a scintillation detector in order to collect transmission data for the entire body being scanned. Such a technique improves the quantitative capability of emission data by acquiring non-truncated attenuation factors. The emission data of a small field of view window is collected so that high resolution image pixels are used for processing the emission data (e.g., of a particular body organ). Since a large field of view is used for collecting the transmission data, the imaging pixels for transmission data are of lower resolution than the emission data. The emission data can be collected using a roving zoom technique during an ECT scan.

Abstract: A variable filter arrangement wherein differently sized and shaped filters are automatically selected and installed from a collection of filters housed within a configuration for use with a radiation source. The line source is typically used for transmission scanning to collect attenuation correction factors. A line source is utilized in the preferred embodiment and a series of filters (e.g., differently sized "bow-tie" filters) are rotatably attached to a central junction so that a particular filter can be rotated into an installed position. When installed, the filter acts to attenuate the radiation emitted from the line source to reduce radiation emitted on an otherwise unobstructed area of a scintillation detector. Differently sized filters are advantageously used to accommodate differently sized patents and also to accommodate different unobstructed parts of a detector for different angles of rotation during an ECT transmission scan.

Abstract: A blood filter device for separating gas bubbles from a flow of blood includes a filter medium in a lower body portion of the device through which the blood must flow before being directed through an outlet tube. An upper cap sealed to the top of the lower body portion includes a blood inlet tube into which a conical dispersion plate is projected so as to decrease the rate of flow of the blood. The rate of flow further decreases as it enters a debubbling chamber in the cap. A top wall of the cap defines a sloped and arched channel around the inlet tube adapted to direct released gas toward a vent tube at the uppermost extent of the sloped top wall.