Abstract: The current invention describes a formulation comprising of acetal or ketal as a solvent, a polyhydric alcohol, water and pH adjuster. These formulations should have a pH at least 7 or higher. Formulations in this invention can optionally contain water-soluble organic solvents as co-solvent, corrosion inhibitors and fluorides. The formulations in this invention can be used to remove post-etched organic and inorganic residue as well as polymeric residues from semiconductor substrates.

Abstract: The present invention relates to an aqueous cleaning composition used to remove unwanted organic and inorganic residues and contaminants from a substrate such as, for example, a semiconductor substrate. The cleaning composition comprises from about 0.01% to about 40% by weight of a salt selected from a guanidinium salt, an acetamidinium salt, a formamidinium salt, and mixtures thereof; water; and optionally a water soluble organic solvent. Compositions according to the present invention are free of an oxidizer and abrasive particles and are capable of removing residues from a substrate and, particularly, a substrate having silicon-containing BARC and/or photoresist residue.

Abstract: A composition comprising one or more water soluble organic solvents comprising a glycol ether; water; a fluoride containing compound provided that if the fluoride containing compound is ammonium fluoride than no additional fluoride containing compound is added to the composition; optionally a quaternary ammonium compound; and optionally a corrosion inhibitor is disclosed herein that is capable of removing residues from an article such as photoresist and/or etching residue. Also disclosed herein is a method for removing residues from an article using the composition disclosed herein.

Abstract: The invention is for a developer for a bilayer photoresist film comprising a first relatively thick layer of a polyglutarimide and a second relatively thin layer of a diazo sensitized novolak resin. The developer is an aqueous solution of a tetra alkyl ammonium hydroxide where at least two of the alkyl groups have two or more carbon atoms. The developer of the invention permits development of the bottom resist layer without erosion of the top resist layer.