Patents by Inventor Michael R Krames

Michael R Krames has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9435525
    Abstract: Multi-part heat exchangers for hot/cold temperature domain isolation in LED lamps are disclosed.
    Type: Grant
    Filed: March 6, 2014
    Date of Patent: September 6, 2016
    Assignee: Soraa, Inc.
    Inventors: Qinghong He, Michael R. Krames
  • Publication number: 20160254418
    Abstract: A semiconductor light emitting device comprising a light emitting layer disposed between an n-type region and a p-type region is combined with a ceramic layer which is disposed in a path of light emitted by the light emitting layer. The ceramic layer is composed of or includes a wavelength converting material such as a phosphor. Luminescent ceramic layers according to embodiments of the invention may be more robust and less sensitive to temperature than prior art phosphor layers. In addition, luminescent ceramics may exhibit less scattering and may therefore increase the conversion efficiency over prior art phosphor layers.
    Type: Application
    Filed: May 9, 2016
    Publication date: September 1, 2016
    Inventors: Gerd O. Mueller, Regina B. Mueller-Mach, Michael R. Krames, Peter J. Schmidt, Hans-Helmut Bechtel, Joerg Meyer, Jan de Graaf, Theo Arnold Kop
  • Patent number: 9410664
    Abstract: Methods and apparatus for providing circadian-friendly LED light sources are disclosed. A light source is formed to include a first LED emission (e.g., one or more LEDs emitting a first spectrum) and a second LED emission (e.g., one or more LEDs emitting a second spectrum) wherein the first and second LED emissions are combined in a first ratio and in a second ratio such that while changing from the first ratio to the second ratio the relative circadian stimulation is varied while maintaining a color rendering index above 80.
    Type: Grant
    Filed: June 26, 2014
    Date of Patent: August 9, 2016
    Assignee: Soraa, Inc.
    Inventors: Michael R. Krames, Aurelien J. F. David
  • Publication number: 20160204308
    Abstract: A light emitting diode device has a bulk gallium and nitrogen containing substrate with an active region. The device has a lateral dimension and a thick vertical dimension such that the geometric aspect ratio forms a volumetric diode that delivers a nearly uniform current density across the range of the lateral dimension.
    Type: Application
    Filed: March 18, 2016
    Publication date: July 14, 2016
    Inventors: THOMAS M. KATONA, JAMES W. RARING, MARK P. D'EVELYN, MICHAEL R. KRAMES, AURELIEN J.F. DAVID
  • Publication number: 20160169476
    Abstract: A light-emitting system for emitting light, comprising: (a) at least one light-emitting diode (LED) configured to emit LED light; (b) at least one optical element optically coupled to said at least one LED and configured to direct a first fraction of said LED light along a first optical path and a second fraction of said LED light along a second optical path; and (c) a color modification element disposed along said second optical path and configured to modify the spectrum of said second fraction of said LED light to emit modified light.
    Type: Application
    Filed: February 23, 2016
    Publication date: June 16, 2016
    Inventors: MICHAEL R. KRAMES, FRANK SHUM
  • Patent number: 9368695
    Abstract: LED lamp systems having improved light quality are disclosed. The lamps emit more than 500 lm and more than 2% of the power in the spectral power distribution is emitted within a wavelength range from about 390 nm to about 430 nm.
    Type: Grant
    Filed: April 28, 2015
    Date of Patent: June 14, 2016
    Assignee: Soraa, Inc.
    Inventors: Aurelien J. F. David, Troy A. Trottier, Michael R. Krames
  • Patent number: 9359260
    Abstract: A semiconductor light emitting device comprising a light emitting layer disposed between an n-type region and a p-type region is combined with a ceramic layer which is disposed in a path of light emitted by the light emitting layer. The ceramic layer is composed of or includes a wavelength converting material such as a phosphor. Luminescent ceramic layers according to embodiments of the invention may be more robust and less sensitive to temperature than prior art phosphor layers. In addition, luminescent ceramics may exhibit less scattering and may therefore increase the conversion efficiency over prior art phosphor layers.
    Type: Grant
    Filed: February 20, 2008
    Date of Patent: June 7, 2016
    Assignee: Lumileds LLC
    Inventors: Gerd O. Mueller, Regina B. Mueller-Mach, Michael R. Krames, Peter J. Schmidt, Hans-Helmut Bechtel, Joerg Meyer, Jan de Graaf, Theo Arnold Kop
  • Publication number: 20160093770
    Abstract: A III-nitride light emitting layer is disposed between an n-type region and a p-type region in a double heterostructure. At least a portion of the III-nitride light emitting layer has a graded composition.
    Type: Application
    Filed: September 30, 2014
    Publication date: March 31, 2016
    Inventors: YU-CHEN SHEN, NATHAN F. GARDER, SATOSHI WATANABE, MICHAEL R. KRAMES, GERD O. MUELLER
  • Patent number: 9293644
    Abstract: A light emitting diode device has a bulk gallium and nitrogen containing substrate with an active region. The device has a lateral dimension and a thick vertical dimension such that the geometric aspect ratio forms a volumetric diode that delivers a nearly uniform current density across the range of the lateral dimension.
    Type: Grant
    Filed: September 27, 2013
    Date of Patent: March 22, 2016
    Assignee: Soraa, Inc.
    Inventors: Thomas M. Katona, James W. Raring, Mark P. D'Evelyn, Michael R. Krames, Aurelien J. F. David
  • Patent number: 9267661
    Abstract: LED illumination systems and techniques for apportioning optical projection paths in an LED lamp are disclosed.
    Type: Grant
    Filed: February 27, 2014
    Date of Patent: February 23, 2016
    Assignee: Soraa, Inc.
    Inventors: Michael R. Krames, Frank Shum
  • Patent number: 9117944
    Abstract: A plurality of III-nitride semiconductor structures, each including a light emitting layer disposed between an n-type region and a p-type region, are grown on a composite substrate. The composite substrate includes a plurality of islands of III-nitride material connected to a host by a bonding layer. The plurality of III-nitride semiconductor structures are grown on the III-nitride islands. The composite substrate may be formed such that each island of III-nitride material is at least partially relaxed. As a result, the light emitting layer of each semiconductor structure has an a-lattice constant greater than 3.19 angstroms.
    Type: Grant
    Filed: September 24, 2008
    Date of Patent: August 25, 2015
    Assignees: Koninklijke Philips N.V., Philips Lumileds Lighting Company LLC
    Inventors: Melvin B. McLaurin, Michael R. Krames
  • Publication number: 20150236225
    Abstract: LED lamp systems having improved light quality are disclosed. The lamps emit more than 500 lm and more than 2% of the power in the spectral power distribution is emitted within a wavelength range from about 390 nm to about 430 nm.
    Type: Application
    Filed: April 28, 2015
    Publication date: August 20, 2015
    Inventors: Aurelien J.F. David, Troy A. Trottier, Michael R. Krames
  • Patent number: 9046227
    Abstract: LED lamp systems having improved light quality are disclosed. The lamps emit more than 500 lm and more than 2% of the power in the spectral power distribution is emitted within a wavelength range from about 390 nm to about 430 nm.
    Type: Grant
    Filed: October 30, 2014
    Date of Patent: June 2, 2015
    Assignee: Soraa, Inc.
    Inventors: Aurelien J. F. David, Troy A. Trottier, Michael R. Krames
  • Patent number: 9000450
    Abstract: A photonic crystal is grown within a semiconductor structure, such as a III-nitride structure, which includes a light emitting region disposed between an n-type region and a p-type region. The photonic crystal may be multiple regions of semiconductor material separated by a material having a different refractive index than the semiconductor material. For example, the photonic crystal may be posts of semiconductor material grown in the structure and separated by air gaps or regions of masking material. Growing the photonic crystal, rather than etching a photonic crystal into an already-grown semiconductor layer, avoids damage caused by etching which may reduce efficiency, and provides uninterrupted, planar surfaces on which to form electric contacts.
    Type: Grant
    Filed: February 24, 2012
    Date of Patent: April 7, 2015
    Assignee: Philips Lumileds Lighting Company LLC
    Inventors: Jonathan J. Wierer, Jr., Michael R. Krames, Nathan F. Gardner
  • Publication number: 20150062892
    Abstract: Methods and apparatus for providing circadian-friendly LED light sources are disclosed. A light source is formed to include a first LED emission (e.g., one or more LEDs emitting a first spectrum) and a second LED emission (e.g., one or more LEDs emitting a second spectrum) wherein the first and second LED emissions are combined in a first ratio and in a second ratio such that while changing from the first ratio to the second ratio the relative circadian stimulation is varied while maintaining a color rendering index above 80.
    Type: Application
    Filed: June 26, 2014
    Publication date: March 5, 2015
    Inventors: Michael R. Krames, Aurelien J.F. David
  • Publication number: 20150049460
    Abstract: LED lamp systems having improved light quality are disclosed. The lamps emit more than 500 lm and more than 2% of the power in the spectral power distribution is emitted within a wavelength range from about 390 nm to about 430 nm.
    Type: Application
    Filed: October 30, 2014
    Publication date: February 19, 2015
    Inventors: AURELIEN J.F. DAVID, TROY A. TROTTIER, MICHAEL R. KRAMES
  • Patent number: 8933644
    Abstract: LED lamp systems having improved light quality are disclosed. The lamps emit more than 500 lm and more than 2% of the power in the spectral power distribution is emitted within a wavelength range from about 390 nm to about 430 nm.
    Type: Grant
    Filed: June 20, 2014
    Date of Patent: January 13, 2015
    Assignee: Soraa, Inc.
    Inventors: Aurelien J. F. David, Troy A. Trottier, Michael R. Krames
  • Patent number: 8911518
    Abstract: The present disclosure relates generally to semiconductor techniques. More specifically, embodiments of the present disclosure provide methods for efficiently dicing substrates containing gallium and nitrogen material. Additionally, the present disclosure provides techniques resulting in an optical device comprising a substrate having a dislocation bundle center being used as a conductive region for a contact.
    Type: Grant
    Filed: June 7, 2012
    Date of Patent: December 16, 2014
    Assignee: Soraa, Inc.
    Inventors: Arpan Chakraborty, Michael R. Krames, Tal Margalith, Rafael Aldaz
  • Patent number: 8884517
    Abstract: An lighting source includes a driver for outputting electrical power in response to external electrical power, wherein the driver generates heat in response thereto, a lamp coupled to the driver, for outputting light in response to the electrical power, wherein the lamp generates heat in response thereto, a first heat sink physically coupled to the driver for receiving and dissipating heat there from, a second heat sink physically coupled to the light for receiving heat and dissipating heat there from, and an insulating portion disposed between the first heat sink and the second heat sink, wherein the insulating portion is configured to inhibit heat from the lamp from being transferred to the driver.
    Type: Grant
    Filed: October 17, 2011
    Date of Patent: November 11, 2014
    Assignee: Soraa, Inc.
    Inventors: Frank Tin Chung Shum, Frank M. Steranka, Michael R. Krames
  • Publication number: 20140301062
    Abstract: LED lamp systems having improved light quality are disclosed. The lamps emit more than 500 lm and more than 2% of the power in the spectral power distribution is emitted within a wavelength range from about 390 nm to about 430 nm.
    Type: Application
    Filed: June 20, 2014
    Publication date: October 9, 2014
    Inventors: Aurelien J.F. David, Troy A. Trottier, Michael R. Krames