Abstract: A method of manufacturing ZnO-containing semiconductor structure includes steps of: (a) forming a subsidiary lamination, including alternately laminating at least two periods of active oxygen layers and ZnO-containing semiconductor layers doped with at least one species of group 3B element; (b) alternately laminating said subsidiary lamination and AgO layer, sandwiching an active oxygen layer, to form lamination structure; and (c) carrying out annealing in atmosphere in which active oxygen exists and pressure is below 10?2 Pa, intermittently irradiating oxygen radical beam on a surface of said lamination structure, forming a p-type ZnO-containing semiconductor structure co-doped with said group 3B element and Ag.

Abstract: A method of manufacturing ZnO-containing semiconductor structure includes steps of: (a) forming a subsidiary lamination, including alternately laminating at least two periods of active oxygen layers and ZnO-containing semiconductor layers doped with at least one species of group 3B element; (b) alternately laminating said subsidiary lamination and AgO layer, sandwiching an active oxygen layer, to form lamination structure; and (c) carrying out annealing in atmosphere in which active oxygen exists and pressure is below 10?2 Pa, intermittently irradiating oxygen radical beam on a surface of said lamination structure, forming a p-type ZnO-containing semiconductor structure co-doped with said group 3B element and Ag.

Abstract: A p-type ZnO based compound semiconductor single crystal layer, wherein the layer includes a p-type ZnO based compound semiconductor single crystal layer co-doped with (i) a Group 11 element which is Cu and/or Ag and (ii) at least one Group 13 element selected from the group consisting of B, Ga, Al, and In, and a concentration of the Group 11 element [11] and a concentration of the Group 13 element [13] fulfill the relation: 0.9?[11]/[13]<100.

Abstract: A p-type ZnO based compound semiconductor single crystal layer, wherein the layer includes a p-type ZnO based compound semiconductor single crystal layer co-doped with (i) a Group 11 element which is Cu and/or Ag and (ii) at least one Group 13 element selected from the group consisting of B, Ga, Al, and In, and a concentration of the Group 11 element [11] and a concentration of the Group 13 element [13] fulfill the relation: 0.9?[11]/[13]<100.

Abstract: A method for producing a p-type ZnO based compound semiconductor layer is provided. The method comprises the steps of (a) preparing an n-type single crystal ZnO based compound semiconductor structure containing a Group 11 element which is Cu and/or Ag and at least one Group 13 element selected from the group consisting of B, Ga, Al, and In, and (b) annealing the n-type single crystal ZnO based compound semiconductor structure to form the p-type ZnO based compound semiconductor layer co-doped with the Group 11 element and the Group 13 element.

Abstract: A method for producing a p-type ZnO based compound semiconductor layer including the steps of (a) supplying (i) Zn, (ii) O, (iii) optional Mg, and (iv) a Group 11 element which is Cu and/or Ag to form a MgxZn1-xO (0?x?0.6) single crystal film doped with the Group 11 element; (b) supplying at least one Group 13 element selected from the group consisting of B, Ga, Al, and In on the MgxZn1-xO (0?x?0.6) single crystal film; (c) alternately carrying out the steps (a) and (b) to form a laminate structure; and (d) annealing the laminate structure to form a p-type MgxZn1-xO (0?x?0.6) layer co-doped with the Group 11 element and the Group 13 element.

Abstract: A method for producing a p-type ZnO based compound semiconductor layer including the steps of (a) supplying (i) Zn, (ii) O, (iii) optional Mg, and (iv) a Group 11 element which is Cu and/or Ag to form a MgxZn1-xO (0?x?0.6) single crystal film doped with the Group 11 element; (b) supplying at least one Group 13 element selected from the group consisting of B, Ga, Al, and In on the MgxZn1-xO (0?x?0.6) single crystal film; (c) alternately carrying out the steps (a) and (b) to form a laminate structure; and (d) annealing the laminate structure to form a p-type MgxZn1-xO (0?x?0.6) layer co-doped with the Group 11 element and the Group 13 element.

Abstract: A method for producing a ZnO based semiconductor element comprises the steps of (a) forming an n-type ZnO based semiconductor layer, (b) forming a ZnO based semiconductor active layer above the n-type ZnO based semiconductor layer, (c) forming a first p-type ZnO based semiconductor layer above the ZnO based semiconductor active layer, and (d) forming a second p-type ZnO based semiconductor layer above the first p-type ZnO based semiconductor layer, wherein the step (d) comprises the steps of (d1) forming an n-type MgxZn1-xO film having a Group 11 element supplied on its surface and doped with a Group 13 element, and (d2) annealing the n-type MgxZn1-xO film for conversion into a p-type film doped with the 11 element, and the first p-type ZnO based semiconductor layer doped an element which reduces diffusion of the Group 11 element and the Group 13 element is formed in the step (c).

Abstract: A method for producing a p-type ZnO based compound semiconductor layer is provided. The method comprises the steps of (a) preparing an n-type single crystal ZnO based compound semiconductor structure containing a Group 11 element which is Cu and/or Ag and at least one Group 13 element selected from the group consisting of B, Ga, Al, and In, and (b) annealing the n-type single crystal ZnO based compound semiconductor structure to form the p-type ZnO based compound semiconductor layer co-doped with the Group 11 element and the Group 13 element.

Abstract: A ZnO-containing semiconductor layer contains Se added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or a semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted.

Abstract: A semiconductor device includes a ZnO-containing substrate containing Li, a zinc silicate layer formed above the ZnO-containing substrate, and a semiconductor layer epitaxially grown relative to the ZnO-containing substrate via the zinc silicate layer.

Abstract: A ZnO based semiconductor device includes: a lamination structure including a first semiconductor layer containing ZnO based semiconductor of a first conductivity type and a second semiconductor layer containing ZnO based semiconductor of a second conductivity type opposite to the first conductivity type, formed above the first semiconductor layer and forming a pn junction together with the first semiconductor layer; and a Zn—Si—O layer containing compound of Zn, Si and O and covering a surface exposing the pn junction of the lamination structure.

Abstract: A ZnO crystal growth method has the steps of (a) preparing a substrate having a surface capable of growing ZnO crystal exposing a Zn polarity plane; (b) supplying Zn and O above the surface of the substrate by alternately repeating a Zn-rich condition period and an O-rich condition period; and (c) supplying conductivity type determining impurities above the surface of the substrate while Zn and O are supplied at the step (b).

Abstract: A semiconductor light emitting device manufacture method is provided which can manufacture a semiconductor light emitting device of high quality. A first substrate of an n-type ZnO substrate is prepared. A lamination structure including an optical emission layer made of ZnO based compound semiconductor is formed on the first substrate. A p-side conductive layer is formed on the lamination structure. A first eutectic material layer made of eutectic material is formed on the p-side conductive layer. A second eutectic material layer made of eutectic material is formed on a second substrate. The first and second eutectic material layers are eutectic-bonded to couple the first and second substrates. After the first substrate is optionally thinned, an n-side electrode is formed on a partial surface of the first substrate.

Abstract: A ZnO-containing semiconductor layer, doped with Se, has an emission peak wavelength in visual light and has a band gap equivalent to a band gap of ZnO.

Abstract: A manufacture method for zinc oxide (ZnO) based semiconductor crystal includes providing a substrate having a Zn polarity plane; and reacting at least zinc (Zn) and oxygen (O) on the Zn polarity plane of said substrate to grow ZnO based semiconductor crystal on the Zn polarity plane of said substrate in a Zn rich condition. (a) An n-type ZnO buffer layer is formed on a Zn polarity plane of a substrate. (b) An n-type ZnO layer is formed on the surface of the n-type ZnO buffer layer. (c) An n-type ZnMgO layer is formed on the surface of the n-type ZnO layer. (d) A ZnO/ZnMgO quantum well layer is formed on the surface of the n-type ZnMgO layer, by alternately laminating a ZnO layer and a ZnMgO layer. @(e) A p-type ZnMgO layer is formed on the surface of the ZnO/ZnMgO quantum well layer. (f) A p-type ZnO layer is formed on the surface of the p-type ZnMgO layer. @(g) An electrode is formed on the n-type ZnO layer and p-type ZnO layer. The n-type ZnO layer is formed under a Zn rich condition at the step (b).

Abstract: A ZnO-containing semiconductor layer contains Se or S added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted.

Abstract: A ZnO based semiconductor light emitting device includes: a first semiconductor layer containing ZnO1-x1Sx1; a second semiconductor layer formed above the first semiconductor layer and containing ZnO1-x2Sx2; and a third semiconductor layer formed above the second semiconductor layer and containing ZnO1-x3Sx3, wherein an S composition x1 of the first semiconductor layer, an S composition x2 of the second semiconductor layer and an S composition x3 of the third semiconductor layer are so selected that an energy of the second semiconductor layer at the lower end of a conduction band becomes lower than both energies of the first and third semiconductor layers at the lower end of the conduction bands, and that an energy of the second semiconductor layer at the upper end of a valence band becomes higher than both energies of the first and third semiconductor layers at the upper end of the valence bands.

Abstract: A ZnO-containing semiconductor layer contains Se added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or a semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted.

Abstract: A semiconductor device includes a ZnO-containing substrate containing Li, a zinc silicate layer formed above the ZnO-containing substrate, and a semiconductor layer epitaxially grown relative to the ZnO-containing substrate via the zinc silicate layer.