Abstract: An actinic ray-sensitive or radiation-sensitive resin composition includes a resin having a repeating unit having a group in which a phenolic hydroxyl group is protected with an acid-leaving group; a first photoacid generator that generates an acid having a pKa of ?2.00 to 2.00, in which in a case where the acid thus generated is a carboxylic acid, a pKa of the carboxylic acid is ?2.00 or more and less than 1.00; and a second photoacid generator that generates a carboxylic acid having a pKa of 1.00 or more.

Abstract: The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition with which a pattern having an excellent pattern collapse suppressing property and excellent LWR performance can be obtained. In addition, the present invention also provides a resist film, a pattern forming method, and a method for manufacturing an electronic device, each regarding the actinic ray-sensitive or radiation-sensitive resin composition. The actinic ray-sensitive or radiation-sensitive resin composition of the present invention includes a resin whose solubility in a developer is changed by the action of an acid, a photoacid generator represented by General Formula (b1), and a solvent, in which the photoacid generator represented by General Formula (b1) is a compound that generates an acid having a pka of 1.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition including: (A) a resin which is decomposed by action of acid to increase polarity; and (B) a compound which generates an acid by irradiation with an actinic ray or a radiation, in which the resin (A) and the acid generated from the compound (B) form a bond by the actinic ray or the radiation or by the action of acid.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition containing, (A) a resin which is decomposed by action of acid to increase polarity; and an ionic compound, in which the ionic compound contains (B) an ionic compound which generates an acid by irradiation with an actinic ray or a radiation and (C) an ionic compound which is decomposed by irradiation with an actinic ray or a radiation to reduce acid-trapping property, or contains (D) an ionic compound which generates an acid by irradiation with an actinic ray or a radiation and is decomposed by irradiation with an actinic ray or a radiation to reduce acid-trapping property, and the resin (A) has a repeating unit represented by the Formula (1).

Abstract: A pattern forming method including: (1) forming a film using an actinic ray-sensitive or radiation-sensitive resin composition that contains a resin (A) which is decomposed by action of acid to increase polarity and a compound (B) which generates an acid by irradiation with an actinic ray or a radiation; (2) exposing the film; and (3) subjecting the exposed film to at least one of development or rinsing with an organic treatment liquid containing butyl acetate and a hydrocarbon having 11 or more carbon atoms, in which a content of the hydrocarbon having 11 or more carbon atoms in the organic treatment liquid is 1% by mass or more and 35% by mass or less.

Abstract: The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition capable of obtaining a pattern having a good shape, a resist film, a pattern forming method, and a method for manufacturing an electronic device. The actinic ray-sensitive or radiation-sensitive resin composition of an embodiment of the present invention includes a salt including a cation represented by Formula (X) and a resin of which polarity increases through decomposition by the action of an acid.

Abstract: A photosensitive composition for EUV light includes a predetermined resin and a photoacid generator, or includes a predetermined resin having a repeating unit having a photoacid generating group, and satisfies Requirements 1 to 3, Requirement 1: The A value determined by Formula (1) is 0.14 or more, A=([H]×0.04+[C]×1.0+[N]×2.1+[O]×3.6+[F]×5.6+[S]×1.5+[I]×39.5)/([H]×1+[C]×12+[N]×14+[O]×16+[F]×19+[S]×32+[I]×127)??Formula(1) Requirement 2: The concentration of solid contents in the photosensitive composition for EUV light is 5.0% by mass or less, Requirement 3: The content of the photoacid generator is 5% to 50% by mass with respect to the total solid content in the photosensitive composition for EUV light.

Abstract: An object of the present invention is to provide an actinic ray-sensitive or radiation-sensitive resin composition by which a pattern having excellent LWR performance can be formed. In addition, another object of the present invention is to provide a resist film, a pattern forming method, and a method for manufacturing an electronic device, each relating to the actinic ray-sensitive or radiation-sensitive resin composition.

Abstract: An object of the present invention is to provide an actinic ray-sensitive or radiation-sensitive resin composition by which a pattern having excellent LWR performance can be formed. In addition, another object of the present invention is to provide a resist film, a pattern forming method, and a method for manufacturing an electronic device, each relating to the actinic ray-sensitive or radiation-sensitive resin composition.

Abstract: The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition that can provide a resist film with excellent sensitivity and a pattern with excellent LER performance, and can suppress pattern collapse during pattern formation. In addition, the present invention also provides a resist film, a pattern forming method, a mask blank with a resist film, a method for producing a photomask, and a method for manufacturing an electronic device, each using the actinic ray-sensitive or radiation-sensitive resin composition.

Abstract: The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition with which a pattern having excellent LWR performance can be obtained, a resist film, a pattern forming method, a method for manufacturing an electronic device, a compound, and a method for producing the compound. The actinic ray-sensitive or radiation-sensitive resin composition of an embodiment of the present invention is an actinic ray-sensitive or radiation-sensitive resin composition including a resin having a repeating unit having a group having a polarity that increases through decomposition by the action of an acid, in which the actinic ray-sensitive or radiation-sensitive resin composition further includes, in addition to the resin, a compound having at least one cation represented by General Formula (1), or the resin further has, in addition to the repeating unit, a repeating unit having the cation represented by General Formula (1).

Abstract: An object of the present invention is to provide an actinic ray-sensitive or radiation-sensitive resin composition with which a pattern having excellent LWR performance can be formed even after the composition is stored for a long period of time. In addition, another object of the present invention is to provide a resist film, a pattern forming method, and a method for manufacturing an electronic device, each relating to the actinic ray-sensitive or radiation-sensitive resin composition. The actinic ray-sensitive or radiation-sensitive resin composition of an embodiment of the present invention includes a resin of which polarity increases through decomposition by an action of an acid, and a compound that generates an acid upon irradiation with actinic rays or radiation, and the compound that generates an acid upon irradiation with actinic rays or radiation is selected from compounds (I) and (II).

Abstract: The present invention provides a pattern forming method with which a pattern having excellent LER performance is obtained. In addition, the present invention provides an actinic ray-sensitive or radiation-sensitive composition and a method for manufacturing an electronic device, which relate to the pattern forming method. The pattern forming method of the present invention includes, in the following order, an exposure step of exposing a resist film, the resist film including an acid-decomposable group a which reacts to generate a polar group having a pKa of 6.0 or more, an acid-decomposable group b which reacts to generate a polar group having a pKa of less than 6.0, and a photoacid-generating component, a first heating step for reacting at least a part of the acid-decomposable group a with an acid to generate the polar group having a pKa of 6.0 or more, a second heating step for reacting at least a part of the acid-decomposable group b to generate the polar group having a pKa of less than 6.

Abstract: A photosensitive composition for EUV light includes a predetermined resin and a photoacid generator, or includes a predetermined resin having a repeating unit having a photoacid generating group, and satisfies Conditions 1 and 2, Condition 1: The A value determined by Formula (1) is 0.14 or more, A=([H]×0.04+[C]×1.0+[N]×2.1+[O]×3.6+[F]×5.6+[S]×1.5+[I]×39.5)/([H]×1+[C]×12+[N]×14+[O]×16+[F]×19+[S]×32+[I]×127)??Formula (1): Condition 2: The concentration of the solid content in the photosensitive composition for EUV light is 2.5% by mass or less.

Abstract: An object of the present invention is to provide a pattern forming method using a non-chemically amplified resist composition, which has excellent washing properties in a washing step with an EBR liquid and is less likely to cause a film loss in a non-exposed portion during development using an organic solvent-based developer. Another object of the present invention to provide a method for manufacturing an electronic device using the pattern forming method.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition contains a resin (C) having a repeating unit represented by Formula (1). A pattern forming method includes a step of forming a film with the actinic ray-sensitive or radiation-sensitive resin composition, and a method of manufacturing an electronic device includes the pattern forming method, in Formula (1), Z represents a halogen atom, a group represented by R11OCH2—, or a group represented by R12OC(?O)CH2—. R11 and R12 each represent a monovalent substituent. X represents an oxygen atom or a sulfur atom. L represents a (n+1)-valent linking group. R represents a group having a group that is decomposed due to the action of an alkali developer to increase solubility in an alkali developer, n represents a positive integer.

Abstract: A method for producing a resist composition includes setting parameter, acquiring a pattern size for a regression analysis, analyzing performing a regression analysis, calculating a pattern size of a target resist composition based on the regression analysis, comparing the pattern size of the target resist composition and the target pattern size, determining a formulating amount of the resist composition in a case where a difference between the pattern size of the target resist composition and the target pattern size is within an allowable range, and producing a resist composition based on the determined formulating amount, in which, in a case where the difference is out of the allowable range, the method further includes changing at least the content of components in the target resist composition, and the formulating amount of the resist composition is determined based on the changed physical quantity to produce the resist composition.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition includes a salt including a sulfonium cation having an aryl group substituted with an acid-decomposable group-containing group and having at least three fluorine atoms; and a resin having a polarity that increases through decomposition by an action of an acid, in which the acid-decomposable group-containing group includes a group having a polarity that increases through decomposition by an action of an acid, and the acid-decomposable group-containing group includes no fluorine atom.

Abstract: An object of the present invention is to provide a pattern forming method with which a pattern having excellent resolution performance and LER performance can be formed. In addition, another object of the present invention is to provide a method for manufacturing an electronic device, an actinic ray-sensitive or radiation-sensitive resin composition, and a resist film. A pattern forming method of the present invention includes a resist film forming step of forming a resist film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition, an exposing step of exposing the resist film, and a developing step of positively developing the exposed resist film using an organic solvent-based developer, in which the actinic ray-sensitive or radiation-sensitive resin composition includes a resin having a polar group, a compound including two or more ion pairs which are decomposed by an irradiation with an actinic ray or a radiation and having a molecular weight of 5,000 or less, and a solvent.

Abstract: The present invention provides a negative tone photosensitive composition for EUV light, capable of forming a pattern, in which occurrence of missing defects is suppressed and pattern collapse is suppressed. The present invention also provides a pattern forming method and a method for manufacturing an electronic device. The negative tone photosensitive composition for EUV light of an embodiment of the present invention includes a resin A having a repeating unit having an acid-decomposable group with a polar group being protected with a protective group that is eliminated by the action of an acid, and a photoacid generator, in which a ClogP value of the resin after elimination of the protective group from the resin A is 1.4 or less, a value x calculated by Expression (1) is 1.2 or more, and the value x calculated by Expression (1) and a value y calculated by Expression (2) satisfy a relationship of Expression (3).