Patents by Inventor Michiko Matsukawa

Michiko Matsukawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230383387
    Abstract: A diamond sintered material includes diamond grains, wherein a content ratio of the diamond grains is more than or equal to 80 volume % and less than or equal to 99 volume % with respect to the diamond sintered material, an average grain size of the diamond grains is more than or equal to 0.1 ?m and less than or equal to 50 ?m, and a dislocation density of the diamond grains is more than or equal to 8.1×1013 m?2 and less than 1.0×1016 m?2.
    Type: Application
    Filed: October 5, 2021
    Publication date: November 30, 2023
    Applicants: SUMITOMO ELECTRIC HARDMETAL CORP., SUMITOMO ELECTRIC INDUSTRIES, LTD.
    Inventors: Hirotsugu IWASAKI, Akihiko UEDA, Michiko MATSUKAWA, Satoru KUKINO, Kei HIRAI
  • Patent number: 11773030
    Abstract: A cBN sintered material comprising cBN particles and a binder phase, in which the binder phase contains AlN and AlB2, a content proportion of cBN particles is 70 to 97 vol %, cBN sintered material has a volume resistivity up to 5×10?3 ?cm, a rate of a peak intensity derived from Al with respect to a peak intensity derived from cBN particles is less than 1.0%, cBN particles include fine particles and coarse particles, coarse particles optionally include ultra-coarse particles, with respect to the entire cBN particles, a content proportion ? of fine particles is from 10 vol %, a content proportion ? of coarse particles is from 30 vol %, a content proportion ? of ultra-coarse particles is 25 vol % or less, and a total of the content proportion ? of fine particles and the content proportion ? of coarse particles is 50 to 100 vol %.
    Type: Grant
    Filed: October 26, 2021
    Date of Patent: October 3, 2023
    Assignee: SUMITOMO ELECTRIC HARDMETAL CORP.
    Inventors: Keita Miyamoto, Satoru Kukino, Akihiko Ueda, Michiko Matsukawa
  • Publication number: 20230203624
    Abstract: A diamond sintered material includes diamond grains, wherein a content ratio of the diamond grains is more than or equal to 80 volume % and less than or equal to 99 volume % with respect to the diamond sintered material, an average grain size of the diamond grains is more than or equal to 0.1 ?m and less than or equal to 50 ?m, and a dislocation density of the diamond grains is more than or equal to 1.2×1016 m?2 and less than or equal to 5.4×1019 m?2.
    Type: Application
    Filed: October 22, 2020
    Publication date: June 29, 2023
    Inventors: Hirotsugu IWASAKI, Akihiko UEDA, Michiko MATSUKAWA, Satoru KUKINO
  • Publication number: 20230192557
    Abstract: A cBN sintered material comprising cBN particles and a binder phase, in which the binder phase contains AlN and AlB2, a content proportion of cBN particles is 70 to 97 vol %, cBN sintered material has a volume resistivity up to 5×10?3 ?cm, a rate of a peak intensity derived from Al with respect to a peak intensity derived from cBN particles is less than 1.0%, cBN particles include fine particles and coarse particles, coarse particles optionally include ultra-coarse particles, with respect to the entire cBN particles, a content proportion ? of fine particles is from 10 vol %, a content proportion ? of coarse particles is from 30 vol %, a content proportion ? of ultra-coarse particles is 25 vol % or less, and a total of the content proportion ? of fine particles and the content proportion ? of coarse particles is 50 to 100 vol %.
    Type: Application
    Filed: October 26, 2021
    Publication date: June 22, 2023
    Inventors: Keita MIYAMOTO, Satoru KUKINO, Akihiko UEDA, Michiko MATSUKAWA
  • Publication number: 20230050739
    Abstract: A cutting tool includes a substrate; and a coating film, wherein the coating film includes a multilayer structure layer having first unit layer(s) and second unit layer(s), the first unit layer(s) and the second unit layer(s) are alternately layered, under a condition X-ray diffraction intensities of different planes in the multilayer structure layer are respectively represented by I(200), I(111), and I(220), the following formula 0.6?I(200)/{I(200)+I(111)+I(220)}, the first unit layer(s) has a NaCl-like structure in which an interplanar spacing d1c in a c-axis direction is larger than an interplanar spacing d1a in an a-axis direction, the second unit layer(s) has a NaCl-like structure in which an interplanar spacing d2c in the c-axis direction is smaller than an interplanar spacing d2a in the a-axis direction, and the following formulas are satisfied as well 1?d1a/d2a?1.02, 1.01?d1c/d2c?1.05, and d1a/d2a<d1c/d2c.
    Type: Application
    Filed: December 9, 2020
    Publication date: February 16, 2023
    Applicant: Sumitomo Electric Hardmetal Corp.
    Inventors: Kenta SANO, Satoru KUKINO, Michiko MATSUKAWA, Nozomi TSUKIHARA
  • Publication number: 20230013990
    Abstract: A cubic boron nitride sintered material includes: to 98 volume % of cubic boron nitride grains; and a binder phase, wherein the binder phase includes at least one selected from a group consisting of one or more first compounds and a solid solution originated from the first compounds, the cubic boron nitride grains include, on number basis, more than or equal to 50% of cubic boron nitride grains each having an equivalent circle diameter of more than 0.5 ?m, and includes, on number basis, less than or equal to 50% of cubic boron nitride grains each having an equivalent circle diameter of more than 2 ?m, and when a mass of the cubic boron nitride grains is assumed as 100 mass %, a total content of lithium, magnesium, calcium, strontium, beryllium, and barium in the cubic boron nitride grains is less than 0.001 mass %.
    Type: Application
    Filed: October 29, 2020
    Publication date: January 19, 2023
    Inventors: Machiko ABE, Satoru KUKINO, Michiko MATSUKAWA, Taisuke HIGASHI
  • Publication number: 20230013675
    Abstract: A cubic boron nitride sintered material includes: 0 to 85 volume % of cubic boron nitride grains; and a binder phase, wherein the binder phase includes at least one selected from a group consisting of one or more first compounds and a solid solution originated from the first compounds, the cubic boron nitride grains include, on number basis, more than or equal to 50% of cubic boron nitride grains each having an equivalent circle diameter of more than 0.5 ?m, and includes, on number basis, less than or equal to 50% of cubic boron nitride grains each having an equivalent circle diameter of more than 2 ?m, and when a mass of the cubic boron nitride grains is assumed as 100 mass %, a total content of lithium, magnesium, calcium, strontium, beryllium, and barium in the cubic boron nitride grains is less than 0.001 mass %.
    Type: Application
    Filed: October 29, 2020
    Publication date: January 19, 2023
    Inventors: Machiko ABE, Satoru KUKINO, Michiko MATSUKAWA, Taisuke HIGASHI
  • Patent number: 11434550
    Abstract: A cubic boron nitride sintered material includes 40% by volume or more and 96% by volume or less of cubic boron nitride grains and 4% by volume or more and 60% by volume or less of a binder phase, and the cubic boron nitride grains have a dislocation density of less than 1×105/m2.
    Type: Grant
    Filed: December 27, 2019
    Date of Patent: September 6, 2022
    Assignee: SUMITOMO ELECTRIC HARDMETAL CORP.
    Inventors: Machiko Abe, Satoru Kukino, Michiko Matsukawa
  • Patent number: 11319255
    Abstract: A composite sintered material includes: cubic boron nitride grains; and hexagonal boron nitride grains or the hexagonal boron nitride grains and wurtzite type boron nitride grains, wherein a dislocation density of the cubic boron nitride grains is more than or equal to 1×1015/m2 and less than or equal to 1×1017/m2, a median diameter d50 of equivalent circle diameters of the cubic boron nitride grains is more than or equal to 10 nm and less than or equal to 500 nm, and a relationship of the following expression 1 is satisfied: 0.015?(Vh+Vw)/(Vc+Vh+Vw)?0.5,??Expression 1: where Vc represents a volume-based content ratio of the cubic boron nitride grains, Vh represents a volume-based content ratio of the hexagonal boron nitride grains, and Vw represents a volume-based content ratio of the wurtzite type boron nitride grains.
    Type: Grant
    Filed: March 18, 2020
    Date of Patent: May 3, 2022
    Assignee: Sumitomo Electric Hardmetal Corp.
    Inventors: Yuh Ishida, Satoru Kukino, Michiko Matsukawa
  • Patent number: 11214522
    Abstract: A polycrystalline cubic boron nitride comprising 96% by volume or more of cubic boron nitride, wherein the cubic boron nitride has a dislocation density of more than 8×1015/m2, the polycrystalline cubic boron nitride comprises a plurality of crystal grains, and the plurality of crystal grains have a median diameter d50 of an equivalent circle diameter of less than 100 nm.
    Type: Grant
    Filed: February 27, 2020
    Date of Patent: January 4, 2022
    Assignee: SUMITOMO ELECTRIC HARDMETAL CORP.
    Inventors: Michiko Matsukawa, Satoru Kukino, Taisuke Higashi, Machiko Abe
  • Patent number: 11208324
    Abstract: A polycrystalline cubic boron nitride comprising 98.5% by volume or more of cubic boron nitride, wherein the cubic boron nitride has a dislocation density of more than 8×1015/m2, the polycrystalline cubic boron nitride comprises a plurality of crystal grains, and the plurality of crystal grains have a median diameter d50 of an equivalent circle diameter of 0.1 ?m or more and 0.5 ?m or less.
    Type: Grant
    Filed: February 27, 2020
    Date of Patent: December 28, 2021
    Assignee: SUMITOMO ELECTRIC HARDMETAL CORP.
    Inventors: Michiko Matsukawa, Satoru Kukino, Taisuke Higashi, Machiko Abe
  • Patent number: 11186485
    Abstract: A polycrystalline cubic boron nitride comprising 96% by volume or more of cubic boron nitride, wherein the cubic boron nitride has a dislocation density of 8×1015/m2 or less, the polycrystalline cubic boron nitride comprises a plurality of crystal grains, and the plurality of crystal grains have a median diameter d50 of an equivalent circle diameter of less than 100 nm.
    Type: Grant
    Filed: February 27, 2020
    Date of Patent: November 30, 2021
    Assignee: SUMITOMO ELECTRIC HARDMETAL CORP.
    Inventors: Michiko Matsukawa, Satoru Kukino, Taisuke Higashi, Machiko Abe
  • Patent number: 11161790
    Abstract: A cubic boron nitride sintered material comprises 30% by volume or more and 80% by volume or less of cubic boron nitride grains and 20% by volume or more and 70% by volume or less of a binder phase, the cubic boron nitride grains having a dislocation density of 3×1017/m2 or more and 1×1020/m2 or less.
    Type: Grant
    Filed: December 16, 2019
    Date of Patent: November 2, 2021
    Assignees: SUMITOMO ELECTRIC HARDMETAL CORP., Sumitomo Electric Industries, Ltd.
    Inventors: Hironari Moroguchi, Michiko Matsukawa, Satoru Kukino, Akito Ishii, Katsumi Okamura, Machiko Abe, Kenta Sano
  • Publication number: 20210309579
    Abstract: A composite sintered material includes: cubic boron nitride grains; and hexagonal boron nitride grains or the hexagonal boron nitride grains and wurtzite type boron nitride grains, wherein a dislocation density of the cubic boron nitride grains is more than or equal to 1×1015/m2 and less than or equal to 1×1017/m2, a median diameter d50 of equivalent circle diameters of the cubic boron nitride grains is more than or equal to 10 nm and less than or equal to 500 nm, and a relationship of the following expression 1 is satisfied: 0.015?(Vh+Vw)/(Vc+Vh+Vw)?0.5,??Expression 1 where Vc represents a volume-based content ratio of the cubic boron nitride grains, Vh represents a volume-based content ratio of the hexagonal boron nitride grains, and Vw represents a volume-based content ratio of the wurtzite type boron nitride grains.
    Type: Application
    Filed: March 18, 2020
    Publication date: October 7, 2021
    Inventors: Yuh ISHIDA, Satoru KUKINO, Michiko MATSUKAWA
  • Publication number: 20210246077
    Abstract: A cubic boron nitride sintered material comprises 30% by volume or more and 80% by volume or less of cubic boron nitride grains and 20% by volume or more and 70% by volume or less of a binder phase, the cubic boron nitride grains having a dislocation density of 3×1017/m2 or more and 1×1020/m2 or less.
    Type: Application
    Filed: December 16, 2019
    Publication date: August 12, 2021
    Applicants: SUMITOMO ELECTRIC HARDMETAL CORP., SUMITOMO ELECTRIC HARDMETAL CORP., Sumitomo Electric Industries, Ltd., Sumitomo Electric Industries, Ltd.
    Inventors: Hironari MOROGUCHI, Michiko MATSUKAWA, Satoru KUKINO, Akito ISHII, Katsumi OKAMURA, Machiko ABE, Kenta SANO
  • Publication number: 20210246076
    Abstract: The cubic boron nitride sintered material comprises 30% by volume or more and 80% by volume or less of cubic boron nitride grains and 20% by volume or more and 70% by volume or less of a binder phase, the cubic boron nitride grains having a dislocation density of 1×1015/m2 or more and 1×1017/m2 or less.
    Type: Application
    Filed: December 16, 2019
    Publication date: August 12, 2021
    Applicants: SUMITOMO ELECTRIC HARDMETAL CORP., Sumitomo Electric Industries, Ltd.
    Inventors: Hironari MOROGUCHI, Michiko MATSUKAWA, Satoru KUKINO, Akito ISHII, Katsumi OKAMURA, Machiko ABE, Kenta SANO
  • Publication number: 20210238036
    Abstract: A polycrystalline cubic boron nitride comprising 98.5% by volume or more of cubic boron nitride, wherein the cubic boron nitride has a dislocation density of more than 8×1015/m2, the polycrystalline cubic boron nitride comprises a plurality of crystal grains, and the plurality of crystal grains have a median diameter d50 of an equivalent circle diameter of 0.1 ?m or more and 0.5 ?m or less.
    Type: Application
    Filed: February 27, 2020
    Publication date: August 5, 2021
    Applicant: Sumitomo Electric Hardmetal Corp.
    Inventors: Michiko MATSUKAWA, Satoru KUKINO, Taisuke HIGASHI, Machiko ABE
  • Publication number: 20210238100
    Abstract: A polycrystalline cubic boron nitride comprising 96% by volume or more of cubic boron nitride, wherein the cubic boron nitride has a dislocation density of more than 8×1015/m2, the polycrystalline cubic boron nitride comprises a plurality of crystal grains, and the plurality of crystal grains have a median diameter d50 of an equivalent circle diameter of less than 100 nm.
    Type: Application
    Filed: February 27, 2020
    Publication date: August 5, 2021
    Applicant: SUMITOMO ELECTRIC HARDMETAL CORP.
    Inventors: Michiko MATSUKAWA, Satoru KUKINO, Taisuke HIGASHI, Machiko ABE
  • Publication number: 20210198772
    Abstract: A cubic boron nitride sintered material includes 40% by volume or more and 96% by volume or less of cubic boron nitride grains and 4% by volume or more and 60% by volume or less of a binder phase, and the cubic boron nitride grains have a dislocation density of less than 1×105/m2.
    Type: Application
    Filed: December 27, 2019
    Publication date: July 1, 2021
    Applicant: SUMITOMO ELECTRIC HARDMETAL CORP.
    Inventors: Machiko ABE, Satoru KUKINO, Michiko MATSUKAWA
  • Patent number: 10987739
    Abstract: Provided are a cemented carbide having excellent plastic deformation resistance and a cutting tool in which the cemented carbide is used as a substrate. A cemented carbide includes a hard phase containing tungsten carbide particles and a binder phase containing, as a main component, an iron-group element, wherein the formula B/A?0.05 is satisfied, where A represents the number of the tungsten carbide particles, and B represents the number of tungsten carbide particles whose number of contact points with other tungsten carbide particles is 1 or less. Preferably, the iron-group element includes cobalt, and the cobalt content in the cemented carbide is 8% by mass or more. Preferably, the tungsten carbide particles have an average particle diameter of 3 ?m or more.
    Type: Grant
    Filed: December 15, 2015
    Date of Patent: April 27, 2021
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Tsuyoshi Yamamoto, Michiko Matsukawa, Yasuki Kido, Keiichi Tsuda