Abstract: The present invention enables highly accurate analysis when visualizing analysis results in spectral imaging. An surface analysis method includes: acquiring spectral image data regarding a sample surface with use of a spectral camera; extracting n wavelengths dispersed in a specific wavelength range in the acquired spectral image data, and converting spectrums of the wavelengths in the spectral image data into n-dimensional spatial vectors for each pixel; normalizing the spatial vectors of the pixels; clustering the normalized spatial vectors into a specific number of classifications; and identifying and displaying pixels clustered into the classifications, for each of the classifications.

Abstract: A defective part recognition device includes a microscope for obtaining a magnified image of a unit area for recognizing a defective part on the surface of a multi-layer film substrate; a spectral camera having an imaging surface where the magnified image is formed; and an information processing part for processing the spectrum information from the spectral camera. The information processing part includes a machine learning part for a clustering process on the spectrum information for each pixel, and a defect recognition part for recognizing a defective part from the result of the machine learning part. The machine learning part sets a cluster in the unit area and generates a histogram with a frequency, the number of pixels clustered into the cluster. The defect recognition part compares the frequency distribution of the generated histogram with that of a histogram free of defects and recognizes a defective part.

Abstract: In a measurement of a microscope image, a measurement can be conducted with high accuracy when measuring a measuring object including a step having a depth larger than a depth of focus or comparing patterns at different positions along the optical axis of a microscope. A microscope image measuring device includes: a microscope for obtaining a magnified image of a surface of a measuring object by irradiating the surface with white incident light; a spectral camera for obtaining a spectral image of the magnified image; and an image processing part for extracting the spectral image at each wavelength and performs an image measuring process. The microscope forms an image of a different focal position at each wavelength on the imaging surface of the spectral camera, and the image processing part extracts a spectral image with a wavelength where a measuring point has the highest contrast, and performs edge detection.

Abstract: Even in the case where an underlayer differs or a film thickness varies, high-quality repair is allowed to be performed. When a laser repair method performs repair work by setting a laser irradiation area for a defect part of a multi-layer film substrate and irradiating the defect part with a laser beam under a set laser working condition, the laser repair method includes: identifying a peripheral region of a laser beam irradiation position; dividing the identified peripheral region into a plurality of divided regions for each common reflected light information; inferring a layer structure at the laser beam irradiation position from analogy based on an arrangement pattern of the divided regions positioned around the laser beam irradiation position; and setting the laser working condition of the laser beam to be emitted based on the layer structure inferred from analogy.

Abstract: A laser repair method includes a repair process of performing repair work by setting a laser radiation range for a defect part in a multi-layer film substrate and irradiating the defect part with a laser beam under set laser working conditions. In the repair process, spectrum data of the defect part is acquired, and the laser working conditions of the laser beam, with which the defect part is to be irradiated, are set using a neural network after learning on the basis of the spectrum data, and the neural network has undergone machine learning using, as learning data, measurement data including multi-layer film structure data, spectrum data of each multi-layer film structure, and laser working experimental data of each multi-layer film structure.

Abstract: The present invention enables a layer to be worked to be properly subjected to a correcting process without being affected by the variations in the material of the underlayer or in the film thickness of the layer. A laser repair method for irradiating a defect portion of a multilayer film structure formed on a substrate, and performing a correcting process is provided. The method includes: acquiring an image of a region including the defect portion; and setting a scan range of the laser beam on the image so as to include the defect portion. At the time of scan of the inside of the scan range with the laser beam, at a scanning position at which color information of the image is recognized as that of the defect portion, an output of the laser beam is controlled to be ON or High.

Abstract: With providing a workpiece that has a seed-crystal zone for microcrystalline silicon at a location proximate to the periphery of and aligned with one of transformation-scheduled regions, each of which is set to coextend with that portion of amorphous silicon which extends over one of gate fins, in a lateral straight line perpendicular to a longitudinal axis of the gate fins, a lateral crystal forming process carries out selective crystal growth by moving a continuous wave laser beam along the lateral straight line with the seed-crystal zone as a starting point to irradiate the amorphous silicon to grow crystalline silicon within the transformation-scheduled region.

Abstract: A first laser irradiation, in which an amorphous silicon film is irradiated with a first laser beam for transformation of the amorphous silicon film to a microcrystalline silicon film, and a second laser irradiation, in which a second laser beam moves along a unidirectional direction with the microcrystalline silicon film as a starting point for lateral crystal growth of growing crystals constituting a crystallized silicon film, are carried out to form a microcrystalline silicon film and a crystallized silicon film alternately along the unidirectional direction.

Abstract: To provide a laser annealing apparatus which is high efficiency of irradiation energy and capable of achieving uniformity in density of irradiation energy in a region irradiated with a laser beam. SOLVING MEANS Scheduled treatment regions of a treatment film are each defined in the form of a strip extending in a scanning direction. Irradiation surface areas of line beams are oriented to be inclined relative to the scanning direction within respective scheduled treatment regions.

Abstract: A laser energy measuring device with which laser light radiated onto a substrate can be evaluated accurately. The laser energy measuring device includes: inside or outside an illuminating optical system, a first beam splitter which reflects laser light by any one of P-polarized reflection and S-polarized reflection; a second beam splitter which performs the other of P-polarized reflection and S-polarized reflection with respect to first reflected light reflected by the first beam splitter; a first measuring unit which measures energy of second reflected light reflected by the second beam splitter; and a second measuring unit which measures energy of transmitted light that has been transmitted through the second beam splitter.

Abstract: A laser annealing method is for irradiating an amorphous silicon film formed on a substrate 6 with laser beams and crystalizing the amorphous silicon film, wherein a plurality of first and second TFT formation portions 23, 24 on the substrate 6 are irradiated with laser beams at differing irradiation doses so as to crystalize the amorphous silicon film in the first TFT formation portions 23 into a polysilicon film having a crystalline state and crystalize the amorphous silicon film in the second TFT formation portions 24 into a polysilicon film having another crystalline state that is different from that of the polysilicon film in the first TFT formation portions 23.

Abstract: A laser annealing method is for irradiating an amorphous silicon film formed on a substrate 6 with laser beams and crystalizing the amorphous silicon film, wherein a plurality of first and second TFT formation portions 23, 24 on the substrate 6 are irradiated with laser beams at differing irradiation doses so as to crystalize the amorphous silicon film in the first TFT formation portions 23 into a polysilicon film having a crystalline state and crystalize the amorphous silicon film in the second TFT formation portions 24 into a polysilicon film having another crystalline state that is different from that of the polysilicon film in the first TFT formation portions 23.

Abstract: A set of film thickness calculation values of constituent films of a lamination structure is calculated at a set of non-treating regions unexposed to laser light, the non-treating regions residing close to a set of treating regions to be annealed, and a set of crystallization levels of the set of treating regions is calculated by a fitting between a second spectral spectrum measurement values of the set of treating regions and a second spectral spectrum calculation values computed from the set of film thickness calculation values, for use to adjust a set of laser energies of laser light to be irradiated on a TFT substrate to be laser annealed at the next time.

Abstract: A laser irradiation apparatus includes a light source that generates a laser beam, a projection lens that radiates the laser beam onto a predetermined region of an amorphous silicon thin film deposited on each of a plurality of thin film transistors on a glass substrate, and a projection mask pattern provided on the projection lens and has a plurality of openings so that the laser beam is radiated onto each of the plurality of thin film transistors, wherein the projection lens radiates the laser beam onto the plurality of thin film transistors on the glass substrate, which moves in a predetermined direction, through the projection mask pattern, and the projection mask pattern is provided such that the openings are not continuous in one column orthogonal to the moving direction.

Abstract: In an oxide semiconductor device including an active layer region constituted by an oxide semiconductor, stability when a stress is applied is improved. The oxide semiconductor device includes an active layer region constituted by an oxide semiconductor of indium (In), gallium (Ga), and zinc (Zn), wherein the active layer region contains an element selected from titanium (Ti), zirconium (Zr), and hafnium (Hf) that are Group 4 elements, or carbon (C), silicon (Si), germanium (Ge), and tin (Sn) that are Group 14 elements at a number density in a range of 1×1016 to 1×1020 cm?3.

Abstract: A laser irradiation device includes a light source that generates laser light; a projection lens that radiates the laser light to a predetermined region of an amorphous silicon thin film deposited on a thin film transistor; and a projection mask including a plurality of opening portions disposed on the projection lens and through which the laser light passes, wherein a predetermined pattern that is able to reduce diffraction of the laser light is formed at a peripheral edge portion of each of the plurality of opening portions.

Abstract: A laser irradiation device includes a light source that generates a laser beam, a projection lens that irradiates a predetermined region of an amorphous silicon thin film, mounted on each of a plurality of thin-film transistors on a glass substrate moving in a predetermined direction, with the laser beam, and a projection mask pattern provided on the projection lens and has a plurality of columns each including a predetermined number of opening portions and provided parallel to the predetermined direction, in which the projection lens emits the laser beam through the projection mask pattern, and the projection mask pattern is configured such that at least some of the predetermined number of opening portions are not on a straight line parallel to the predetermined direction in each of the plurality of columns.

Abstract: The present invention provides a method for manufacturing a thin film transistor including processing of irradiating an amorphous silicon film 8 deposited on a substrate with laser light. The method comprises: a laser annealing step for forming a polysilicon film 9 including a channel region 52 by irradiating an area including a formation region of the region 52 in the film 8 with the laser light such that the area including the formation region is heated, melted, and recrystallized; and a removing step for etching off an area outside the region 52 from the polysilicon film 9. Thus, the present invention can provide a method for manufacturing a thin film transistor and a mask for use in the manufacturing method that are capable of promoting the recrystallization of the film 8 and thereby improving its electron mobility even when laser irradiation has to be performed under restricted irradiation conditions.

Abstract: A laser irradiation device includes a light source that generates laser light; and a laser head including cylindrical lenses that receive the laser light and generate a thin line laser beam parallel to a moving direction of a substrate, wherein the laser head irradiates a predetermined region of the substrate covered with an amorphous silicon thin film with the thin line laser beam and forms a polysilicon thin film in the predetermined region.

Abstract: A laser irradiation device includes a light source that generates laser light, a projection lens that radiates the laser light to a predetermined region of an amorphous silicon thin film deposited on a substrate, and a projection mask pattern provided on the projection lens and having a plurality of opening portions so that a predetermined region of the amorphous silicon thin film is irradiated with the laser light, wherein each of the plurality of opening portions has a transmittance based on a projection magnification of the projection lens.