Patents by Inventor Mihaela A. Balseanu

Mihaela A. Balseanu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11164753
    Abstract: Provided are self-aligned double patterning methods including feature trimming. The SADP process is performed in a single batch processing chamber in which the substrate is laterally moved between sections of the processing chamber separated by gas curtains so that each section independently has a process condition.
    Type: Grant
    Filed: January 13, 2015
    Date of Patent: November 2, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Ning Li, Victor Nguyen, Mihaela Balseanu, Li-Qun Xia, Keiichi Tanaka, Steven D. Marcus
  • Patent number: 11158489
    Abstract: Apparatus and methods to control the phase of power sources for plasma process regions in a batch process chamber. A master exciter controls the phase of the power sources during the process sequence based on feedback from the match circuits of the respective plasma sources.
    Type: Grant
    Filed: November 7, 2017
    Date of Patent: October 26, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Tsutomu Tanaka, John C. Forster, Ran Liu, Kenichi Ohno, Ning Li, Mihaela Balseanu, Keiichi Tanaka, Li-Qun Xia
  • Patent number: 11133178
    Abstract: Methods for filling a substrate feature with a seamless dielectric gap fill are described. Methods comprise sequentially depositing a film with a seam, etching the the film to form a recess, and depositing a second film in the recess to form a seamless gap fill.
    Type: Grant
    Filed: September 20, 2019
    Date of Patent: September 28, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Mihaela Balseanu, Ning Li
  • Publication number: 20210265157
    Abstract: Processing methods for forming a silicon nitride film comprising exposing a metal surface to a silicon precursor, a nitrogen-containing reactant and a hydrogen-containing plasma at a temperature less than or equal to about 250° C. to form a silicon nitride film with a low etch rate without damaging the metal surface.
    Type: Application
    Filed: May 10, 2021
    Publication date: August 26, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Wenbo Yan, Cong Trinh, Ning Li, Mihaela Balseanu, Li-Qun Xia, Maribel Maldonado-Garcia
  • Publication number: 20210230747
    Abstract: Methods of selectively forming SiCON films are described. In some embodiments, the methods comprise sequential exposure to a silicon halide, a mixture of alkanolamine and amine reactants and a deposition plasma. In some embodiments, the method further comprises pre-cleaning the target substrate to improve selectivity.
    Type: Application
    Filed: January 26, 2020
    Publication date: July 29, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Shuaidi Zhang, Ning Li, Mihaela Balseanu
  • Patent number: 11028478
    Abstract: Provided are methods for the deposition of films comprising SiCN. Certain methods involve exposing a substrate surface to a silicon precursor, wherein the silicon precursor is halogenated with Cl, Br or I, and the silicon precursor comprises a halogenated silane, a halogenated carbosilane, an halogenated aminosilane or a halogenated carbo-sillyl amine. Then, the substrate surface can be exposed to a nitrogen-containing plasma or a nitrogen precursor and densification plasma.
    Type: Grant
    Filed: June 12, 2018
    Date of Patent: June 8, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Victor Nguyen, Ning Li, Mihaela Balseanu, Li-Qun Xia, Mark Saly, David Thompson
  • Publication number: 20210166973
    Abstract: Electronic devices and methods to form electronic devices having a self-aligned via are described. An adhesion enhancement layer is utilized to promote adhesion between the conductive material and the sidewalls of the at least one via opening. The self-aligned vias decrease via resistance and reduce the potential to short to the wrong metal line.
    Type: Application
    Filed: January 14, 2021
    Publication date: June 3, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Suketu Arun Parikh, Mihaela A. Balseanu
  • Patent number: 11017997
    Abstract: Processing methods for forming a silicon nitride film comprising exposing a metal surface to a silicon precursor, a nitrogen-containing reactant and a hydrogen-containing plasma at a temperature less than or equal to about 250° C. to form a silicon nitride film with a low etch rate without damaging the metal surface.
    Type: Grant
    Filed: January 11, 2018
    Date of Patent: May 25, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Wenbo Yan, Cong Trinh, Ning Li, Mihaela Balseanu, Li-Qun Xia, Maribel Maldonado-Garcia
  • Publication number: 20210140046
    Abstract: Silyl pseudohalides having a general formula of R4?nSiXn, where n is a range of 1-4, each R is independently selected from H, alkyl, alkenyl, aryl, amino, alkyl amino, alkoxide, and phosphine groups, and each X is a pseudohalide selected from nitrile, cyanate, isocyanate, thiocyanate, isothiocyanate, selenocyanate and isoselenocyanate are disclosed. Further, some embodiments of the disclosure provide methods for depositing silicon-containing films using silyl pseudohalides.
    Type: Application
    Filed: November 12, 2020
    Publication date: May 13, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Keenan N. Woods, Cong Trinh, Mark Saly, Mihaela A. Balseanu, Maribel Maldonado-Garcia, Lisa J. Enman
  • Publication number: 20210090882
    Abstract: Methods for filling a substrate feature with a seamless dielectric gap fill are described. Methods comprise sequentially depositing a film with a seam, etching the the film to form a recess, and depositing a second film in the recess to form a seamless gap fill.
    Type: Application
    Filed: September 20, 2019
    Publication date: March 25, 2021
    Inventors: Mihaela Balseanu, Ning Li
  • Patent number: 10957532
    Abstract: Methods and apparatus for forming a conformal SiOC film on a surface are described. A SiCN film is formed on a substrate surface and exposed to a steam annealing process to decrease the nitrogen content, increase the oxygen content and leave the carbon content about the same. The annealed film has one or more of the wet etch rate or dielectric constant of the film.
    Type: Grant
    Filed: September 11, 2019
    Date of Patent: March 23, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Ning Li, Zhelin Sun, Mihaela Balseanu, Li-Qun Xia, Bhaskar Jyoti Bhuyan, Mark Saly
  • Patent number: 10923396
    Abstract: Electronic devices and methods to form electronic devices having a self-aligned via are described. An adhesion enhancement layer is utilized to promote adhesion between the conductive material and the sidewalls of the at least one via opening. The self-aligned vias decrease via resistance and reduce the potential to short to the wrong metal line.
    Type: Grant
    Filed: March 13, 2020
    Date of Patent: February 16, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Suketu Arun Parikh, Mihaela Balseanu
  • Publication number: 20210043448
    Abstract: Processing platforms having a central transfer station with a robot and an environment having greater than or equal to about 0.1% by weight water vapor, a pre-clean chamber connected to a side of the transfer station and a batch processing chamber connected to a side of the transfer station. The processing platform configured to pre-clean a substrate to remove native oxides from a first surface, form a blocking layer using a alkylsilane and selectively deposit a film. Methods of using the processing platforms and processing a plurality of wafers are also described.
    Type: Application
    Filed: October 27, 2020
    Publication date: February 11, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Ning Li, Mihaela A. Balseanu, Li-Qun Xia, Dongqing Yang, Lala Zhu, Malcolm J. Bevan, Theresa Kramer Guarini, Wenbo Yan
  • Publication number: 20210032749
    Abstract: Methods of depositing an encapsulation stack without damaging underlying layers are discussed. The encapsulation stacks are highly conformal, have low etch rates, low atomic oxygen concentrations, good hermeticity and good adhesion. These films may be used to protect chalcogen materials in PCRAM devices. Some embodiments utilize a two-step process comprising a first ALD process to form a protective layer and a second plasma ALD process to form an encapsulation layer.
    Type: Application
    Filed: July 29, 2020
    Publication date: February 4, 2021
    Applicant: Applied Materials, Inc.
    Inventors: Cong Trinh, Mihaela A. Balseanu, Maribel Maldonado-Garcia, Ning Li, Mark Saly, Bhaskar Jyoti Bhuyan, Keenan N. Woods, Lisa J. Enman
  • Publication number: 20200332415
    Abstract: Methods and apparatus for forming a conformal SiCON film on a surface are described. A SiCN film is formed on a substrate surface and exposed to a low temperature steam annealing process to form a film resistant to damage by rapid thermal processing or ashing. The film is treated by rapid thermal processing and then subjected to a high temperature anneal to form a film with a low dielectric constant.
    Type: Application
    Filed: August 6, 2018
    Publication date: October 22, 2020
    Inventors: Bhaskar Jyoti Bhuyan, Mark Saly, Zhelin Sun, Ning Li, Mihaela Balseanu, Li-Qun Xia, Yijun Liu, Lin Yang
  • Publication number: 20200312653
    Abstract: Methods and precursors for selectively depositing a metal film on a silicon nitride surface relative to a silicon oxide surface are described. The substrate comprising both surfaces is exposed to a blocking compound to selectively block the silicon oxide surface. A metal film is then selectively deposited on the silicon nitride surface.
    Type: Application
    Filed: October 5, 2018
    Publication date: October 1, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Kurt Fredrickson, Atashi Basu, Mihaela Balseanu, Ning Li
  • Publication number: 20200235104
    Abstract: Memory devices and methods of forming memory devices are described. The memory devices comprise a substrate with at least one film stack. The film stack comprises a polysilicon layer on the substrate; a bit line metal layer on the polysilicon layer; a cap layer on the bit line metal layer; and a hardmask on the cap layer. The memory device of some embodiments includes an optional barrier metal layer on the polysilicon layer and the bit line metal layer is on the barrier metal layer. Methods of forming electronic devices are described where one or more patterns are transferred through the films of the film stack to provide the bit line of a memory device.
    Type: Application
    Filed: April 3, 2020
    Publication date: July 23, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Priyadarshi Panda, Jianxin Lei, Wenting Hou, Mihaela Balseanu, Ning Li, Sanjay Natarajan, Gill Yong Lee, In Seok Hwang, Nobuyuki Sasaki, Sung-Kwan Kang
  • Patent number: 10714331
    Abstract: A method for forming a thermally stable spacer layer is disclosed. The method includes first disposing a substrate in an internal volume of a processing chamber. The substrate has a film formed thereon, the film including silicon, carbon, nitrogen, and hydrogen. Next, high pressure steam is introduced into the processing chamber. The film is exposed to the high pressure steam to convert the film to reacted film, the reacted film including silicon, carbon, oxygen, and hydrogen.
    Type: Grant
    Filed: March 15, 2019
    Date of Patent: July 14, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Mihaela Balseanu, Srinivas D. Nemani, Mei-Yee Shek, Ellie Y. Yieh
  • Publication number: 20200219768
    Abstract: Electronic devices and methods to form electronic devices having a self-aligned via are described. An adhesion enhancement layer is utilized to promote adhesion between the conductive material and the sidewalls of the at least one via opening. The self-aligned vias decrease via resistance and reduce the potential to short to the wrong metal line.
    Type: Application
    Filed: March 13, 2020
    Publication date: July 9, 2020
    Inventors: Suketu Arun Parikh, Mihaela Balseanu
  • Patent number: 10700072
    Abstract: Memory devices and methods of forming memory devices are described. The memory devices comprise a substrate with at least one film stack. The film stack comprises a polysilicon layer on the substrate; a bit line metal layer on the polysilicon layer; a cap layer on the bit line metal layer; and a hardmask on the cap layer. The memory device of some embodiments includes an optional barrier metal layer on the polysilicon layer and the bit line metal layer is on the barrier metal layer. Methods of forming electronic devices are described where one or more patterns are transferred through the films of the film stack to provide the bit line of a memory device.
    Type: Grant
    Filed: October 18, 2018
    Date of Patent: June 30, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Priyadarshi Panda, Jianxin Lei, Wenting Hou, Mihaela Balseanu, Ning Li, Sanjay Natarajan, Gill Yong Lee, In Seok Hwang, Nobuyuki Sasaki, Sung-Kwan Kang