Abstract: Methods for forming a spacer comprising depositing a film on the top, bottom and sidewalls of a feature and treating the film to change a property of the film on the top and bottom of the feature. Selectively dry etching the film from the top and bottom of the feature relative to the film on the sidewalls of the feature using a high intensity plasma.

Abstract: Methods for forming a spacer comprising depositing a film on the top, bottom and sidewalls of a feature and treating the film to change a property of the film on the top and bottom of the feature so that the film can be selectively etched from the top and bottom of the feature relative to the film on the sidewalls of the feature.

Abstract: Aspects of the disclosure pertain to methods of forming conformal liners on patterned substrates having high height-to-width aspect ratio gaps. Layers formed according to embodiments outlined herein have been found to inhibit diffusion and electrical leakage across the conformal liners. The liners may comprise nitrogen and be described as nitride layers according to embodiments. The conformal liners may comprise silicon and nitrogen and may consist of silicon and nitrogen in embodiments. Methods described herein may comprise introducing a silicon-containing precursor and a nitrogen-containing precursor into a substrate processing region and concurrently applying a pulsed plasma power capacitively to the substrate processing region to form the conformal layer.

Abstract: Embodiments of the present invention provide processes to selectively form a metal layer on a conductive surface, followed by flowing a silicon based compound over the metal layer to form a metal silicide layer. In one embodiment, a substrate having a conductive surface and a dielectric surface is provided. A metal layer is then deposited on the conductive surface. A metal silicide layer is formed as a result of flowing a silicon based compound over the metal layer. A dielectric is formed over the metal silicide layer.

Abstract: Methods for the deposition of SiN films comprising sequential exposure of a substrate surface to a silicon halide precursor at a temperature greater than or equal to about 600° C. and a nitrogen-containing reactant.

Abstract: A method for fabricating an MRAM bit that includes depositing a spacer layer that protects the tunneling barrier layer during processing is disclosed. The deposited spacer layer prevents byproducts formed in later processing from redepositing on the tunneling barrier layer. Such redeposition may lead to product failure and decreased manufacturing yield. The method further includes non-corrosive processing conditions that prevent damage to the layers of MRAM bits. The non-corrosive processing conditions may include etching without using a halogen-based plasma. Embodiments disclosed herein use an etch-deposition-etch sequence that simplifies processing.

Abstract: Methods for the formation of SiCN, SiCO and SiCON films comprising cyclical exposure of a substrate surface to a silicon-containing gas, a carbon-containing gas and a plasma. Some embodiments further comprise the addition of an oxidizing agent prior to at least the plasma exposure.

Abstract: Aspects of the disclosure pertain to methods of forming conformal liners on patterned substrates having high height-to-width aspect ratio gaps. Layers formed according to embodiments outlined herein have been found to inhibit diffusion and electrical leakage across the conformal liners. The liners may comprise nitrogen and be described as nitride layers according to embodiments. The conformal liners may comprise silicon and nitrogen and may consist of silicon and nitrogen in embodiments. Methods described herein may comprise introducing a silicon-containing precursor and a nitrogen-containing precursor into a substrate processing region and concurrently applying a pulsed plasma power capacitively to the substrate processing region to form the conformal layer.

Abstract: Processes for depositing SiO2 films on a wafer surface utilizing an aminosilane compound as a silicon precursor are described.

Abstract: Embodiments disclosed herein generally relate to the processing of substrates, and more particularly, relate to methods for accurate control of film thickness using deposition-etch cycles. Particularly, embodiments of the present disclosure may be used in controlling film thickness during filling high aspect ratio features.

Abstract: Embodiments of the present invention generally relate to a method for forming a dielectric barrier layer. The dielectric barrier layer is deposited over a substrate by a plasma enhanced deposition process. In one embodiment, a gas mixture is introduced into a processing chamber. The gas mixture includes a silicon-containing gas, a nitrogen-containing gas, a boron-containing gas, and argon (Ar) gas.

Abstract: Embodiments disclosed herein generally relate to the processing of substrates, and more particularly, relate to methods for accurate control of film thickness using deposition-etch cycles. Particularly, embodiments of the present disclosure may be used in controlling film thickness during filling high aspect ratio features.

Abstract: Embodiments disclosed herein generally relate to the processing of substrates, and more particularly, relate to methods for forming a dielectric film. In one embodiment, the method includes placing a plurality of substrates inside a processing chamber and performing a sequence of exposing the substrates to a first reactive gas comprising silicon, and then exposing the substrates to a plasma of a second reactive gas comprising nitrogen and at least one of oxygen or carbon, and repeating the sequence to form the dielectric film comprising silicon carbon nitride or silicon carbon oxynitride on each of the substrates.

Abstract: Embodiments disclosed herein generally relate to forming dielectric materials in high aspect ratio features. In one embodiment, a method for filling high aspect ratio trenches in one processing chamber is disclosed. The method includes placing a substrate inside a processing chamber, where the substrate has a surface having a plurality of high aspect ratio trenches and the surface is facing a gas/plasma distribution assembly. The method further includes performing a sequence of depositing a layer of dielectric material on the surface of the substrate and inside each of the plurality of trenches, where the layer of dielectric material is on a bottom and side walls of each trench, and removing a portion of the layer of dielectric material disposed on the surface of the substrate, where an opening of each trench is widened. The sequence repeats until the trenches are filled seamlessly with the dielectric material.

Abstract: A method for fabricating an MRAM bit that includes depositing a spacer layer that protects the tunneling barrier layer during processing is disclosed. The deposited spacer layer prevents byproducts formed in later processing from redepositing on the tunneling barrier layer. Such redeposition may lead to product failure and decreased manufacturing yield. The method further includes non-corrosive processing conditions that prevent damage to the layers of MRAM bits. The non-corrosive processing conditions may include etching without using a halogen-based plasma. Embodiments disclosed herein use an etch-deposition-etch sequence that simplifies processing.

Abstract: Provided are self-aligned double patterning methods including feature trimming. The SADP process is performed in a single batch processing chamber in which the substrate is laterally moved between sections of the processing chamber separated by gas curtains so that each section independently has a process condition.

Abstract: Provided are methods for the deposition of films comprising SiCN. Certain methods involve exposing a substrate surface to a silicon precursor, wherein the silicon precursor is halogenated with Cl, Br or I, and the silicon precursor comprises a halogenated silane, a halogenated carbosilane, an halogenated aminosilane or a halogenated carbo-sillyl amine. Then, the substrate surface can be exposed to a nitrogen-containing plasma or a nitrogen precursor and densification plasma.

Abstract: Provided are methods for the deposition and doping of films comprising Si. Certain methods involve depositing a SiN, SiO, SiON, SiC or SiCN film and doping the Si-containing film with one or more of C, B, O, N and Ge by a plasma implantation process. Such doped Si-containing films may have improved properties such as reduced etch rate in acid-based clean solutions, reduced dielectric constant and/or improved dielectric strength.

Abstract: Methods for the repair of damaged low k films are provided. In one embodiment, the method comprises providing a substrate having a low k dielectric film deposited thereon, and exposing a surface of the low k dielectric film to an activated carbon-containing precursor gas to form a conformal carbon-containing film on the surface of the low k dielectric film, wherein the carbon-containing precursor gas has at least one or more Si—N—Si linkages in the molecular structure.

Abstract: Embodiments of the present invention provide processes to selectively form a metal layer on a conductive surface, followed by flowing a silicon based compound over the metal layer to form a metal silicide layer. In one embodiment, a substrate having a conductive surface and a dielectric surface is provided. A metal layer is then deposited on the conductive surface. A metal silicide layer is formed as a result of flowing a silicon based compound over the metal layer. A dielectric is formed over the metal silicide layer.