Abstract: [Object] Provided is a method of producing a nerve fascicle including efficiently extending axons of neural cells. [Solution] Neural cells are cultivated in the presence of feeder cells including at least one type of cells selected from the group consisting of vascular component cells, perivascular cells, and oligodendrocytes.

Abstract: The present invention provides a method for labeling an agent, the method comprising: (i) a step of chelating a non-radioactive substance by a chelating agent having a reactive group, and (ii) a step of binding the chelating agent that chelated the non-radioactive substance in step (i) to the agent via the reactive group, the method being for use in the evaluation of pharmacokinetics, and the like.

Abstract: The present disclosure relates to a neural cell population, a neural cell-containing preparation, and a method for producing the population and preparation. More particularly, the present invention relates to a neural cell population derived from intraoral mesenchymal cells, wherein a proportion of normal diploid cells is 80% or more, a preparation containing the neural cell population, and a method for producing the population and the preparation.

Abstract: [Object] Provided is a method of producing a nerve bundle including efficiently extending axons of neural cells. [Solution] Neural cells are cultivated in the presence of feeder cells including at least one type of cells selected from vascular component cells and perivascular cells.

Abstract: A first semiconductor device of an embodiment includes a first semiconductor layer of a first conductivity type, a first control electrode, an extraction electrode, a second control electrode, and a third control electrode. The first control electrode faces a second semiconductor layer of the first conductivity type, a third semiconductor layer of a second conductivity type, and a fourth semiconductor layer of a first conductivity type, via a first insulating film. The second control electrode and the third control electrode are electrically connected to the extraction electrode, and face the second semiconductor layer under the extraction electrode, via the second insulating film. At least a part of the second control electrode and the whole of the third control electrode are provided under the extraction electrode. The electrical resistance of the second control electrode is higher than the electrical resistance of the third control electrode.

Abstract: A first semiconductor device of an embodiment includes a first semiconductor layer of a first conductivity type, a first control electrode, an extraction electrode, a second control electrode, and a third control electrode. The first control electrode faces a second semiconductor layer of the first conductivity type, a third semiconductor layer of a second conductivity type, and a fourth semiconductor layer of a first conductivity type, via a first insulating film. The second control electrode and the third control electrode are electrically connected to the extraction electrode, and face the second semiconductor layer under the extraction electrode, via the second insulating film. At least a part of the second control electrode and the whole of the third control electrode are provided under the extraction electrode. The electrical resistance of the second control electrode is higher than the electrical resistance of the third control electrode.

Abstract: According to one embodiment, there is provided a light-emitting device including a light-emitting section, a thermal radiation member, and a heat conduction layer. The light-emitting section includes a mounting substrate section and a light-emitting element section. The mounting substrate section includes a substrate, a first metal layer, and a second metal layer. The substrate includes a first principal plane including a mounting region and a second principal plane. The first metal layer includes mounting patterns provided in the mounting region. The light-emitting element section includes semiconductor light-emitting elements and a wavelength conversion layer. The semiconductor light-emitting elements are connected to the mounting patterns. The luminous existence of the light-emitting element section is equal to or higher than 10 lm/mm2 and equal to or lower than 100 lm/mm2. The thermal radiation member has an area equal to or larger than five times the area of the mounting region.

Abstract: A first semiconductor device of an embodiment includes a first semiconductor layer of a first conductivity type, a first control electrode, an extraction electrode, a second control electrode, and a third control electrode. The first control electrode faces a second semiconductor layer of the first conductivity type, a third semiconductor layer of a second conductivity type, and a fourth semiconductor layer of a first conductivity type, via a first insulating film. The second control electrode and the third control electrode are electrically connected to the extraction electrode, and face the second semiconductor layer under the extraction electrode, via the second insulating film. At least a part of the second control electrode and the whole of the third control electrode are provided under the extraction electrode. The electrical resistance of the second control electrode is higher than the electrical resistance of the third control electrode.

Abstract: A semiconductor device includes a first semiconductor layer of a first conductivity type. A second semiconductor layer of a second conductivity type is on the first semiconductor layer. A third semiconductor layer is on the second semiconductor layer. A fourth semiconductor layer is selectively in the first semiconductor layer. A first trench and second trench penetrate from a surface of the third layer through the second layer to reach the first layer. An embedded electrode is in the first trench. A control electrode is above the embedded electrode via an insulating film. A lower end of the second trench is connected to the fourth semiconductor layer. A first main electrode is electrically connected to the first layer. A second main electrode is provided in the second trench. A Schottky junction is formed by the first layer and the second main electrode at a sidewall of the second trench.

Abstract: According to an embodiment, a semiconductor device includes a second semiconductor layer provided on a first semiconductor layer and including first pillars and second pillars. A first control electrode is provided in a trench of the second semiconductor layer and a second control electrode is provided on the second semiconductor layer and connected to the first control electrode. A first semiconductor region is provided on a surface of the second semiconductor layer except for a portion under the second control electrode. A second semiconductor region is provided on a surface of the first semiconductor region, the second semiconductor region being apart from the portion under the second control electrode and a third semiconductor region is provided on the first semiconductor region. A first major electrode is connected electrically to the first semiconductor layer and a second major electrode is connected electrically to the second and the third semiconductor region.

Abstract: A self-ballasted lamp includes: a base body; a light-emitting module and a globe which are provided at one end side of the base body; a cap provided at the other end side of the base body; and a lighting circuit housed between the base body and the cap. The light-emitting module has light-emitting portions each using a semiconductor light-emitting element, and a support portion projected at one end side of the base body, and the light-emitting portions are disposed at least on a circumferential surface of the support portion. A light-transmissive member is interposed between the light-emitting module and an inner face of the globe.

Abstract: According to one embodiment, there is provided a light-emitting module including a substrate, a light-emitting body provided on the substrate, and a phosphor containing layer provided on the substrate and the light-emitting body, the phosphor containing layer including a first phosphor excited by emitted light of the light-emitting body, having a light emission peak in a wavelength range equal to or greater than 610 nm and less than 655 nm, and having a surface covered with a protection film.

Abstract: A light emitting module according to one embodiment includes a substrate; a light emitting body disposed on the substrate; and a phosphor layer having a first phosphor and a second phosphor which are excited by emitted light of the light emitting body. The first phosphor has a light emitting peak whose half-value width is 20 nm or less in a wavelength range from 610 nm to less than 650 nm, and the second phosphor has the light emitting peak in the wavelength range between a peak wavelength of a light emitting spectrum of the light emitting body and the peak wavelength of the light emitting spectrum of the first phosphor. Then, a distribution of the first phosphor in the phosphor layer has density gradient, where the density of the first phosphor increases toward at least one end of the phosphor layer in a direction perpendicular to the substrate.

Abstract: A luminaire includes a semiconductor light source having a light emission peak in a range of wavelength smaller than 480 nm and a phosphor excited by light radiated from the semiconductor light source to radiate light having wavelength equal to or larger than 480 nm. A spectrum of radiated light obtained by combining the light radiated from the semiconductor light source and the light radiated from the phosphor has a light emission peak in a range of wavelength equal to or larger than 610 nm and smaller than 650 nm. A ratio of radiation energy in a range of wavelength equal to or larger than 650 nm and equal to or smaller than 780 nm to radiation energy in a range of wavelength equal to or larger than 600 nm and smaller than 650 nm is equal to or lower than 35%. A color gamut area ratio exceeds 100%.

Abstract: A first semiconductor device of an embodiment includes a first semiconductor layer of a first conductivity type, a first control electrode, an extraction electrode, a second control electrode, and a third control electrode. The first control electrode faces a second semiconductor layer of the first conductivity type, a third semiconductor layer of a second conductivity type, and a fourth semiconductor layer of a first conductivity type, via a first insulating film. The second control electrode and the third control electrode are electrically connected to the extraction electrode, and face the second semiconductor layer under the extraction electrode, via the second insulating film. At least a part of the second control electrode and the whole of the third control electrode are provided under the extraction electrode. The electrical resistance of the second control electrode is higher than the electrical resistance of the third control electrode.

Abstract: A luminaire includes a semiconductor light source having a light emission peak in a range of wavelength smaller than 480 nm and a phosphor excited by light radiated from the semiconductor light source to radiate light having wavelength equal to or larger than 480 nm. A spectrum of radiated light obtained by combining the light radiated from the semiconductor light source and the light radiated from the phosphor has a light emission peak in a range of wavelength equal to or larger than 610 nm and smaller than 650 nm. A ratio of radiation energy in a range of wavelength equal to or larger than 650 nm and equal to or smaller than 780 nm to radiation energy in a range of wavelength equal to or larger than 600 nm and smaller than 650 nm is equal to or lower than 35%. A color gamut area ratio exceeds 100%.

Abstract: According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type, a third semiconductor layer of a second conductivity type, a fourth semiconductor layer of the second conductivity type, a fifth semiconductor layer of the first conductivity type, a control electrode, a first main electrode, a second main electrode, and a sixth semiconductor layer of the first conductivity type. The second semiconductor layer and the third semiconductor layer are alternately provided on the first semiconductor layer in a direction substantially parallel to a major surface of the first semiconductor layer. The fourth semiconductor layer is provided on the second semiconductor layer and the third semiconductor layer. The fifth semiconductor layer is selectively provided on a surface of the fourth semiconductor layer. The control electrode is provided in a trench via an insulating film.

Abstract: A first semiconductor device of an embodiment includes a first semiconductor layer of a first conductivity type, a first control electrode, an extraction electrode, a second control electrode, and a third control electrode. The first control electrode faces a second semiconductor layer of the first conductivity type, a third semiconductor layer of a second conductivity type, and a fourth semiconductor layer of a first conductivity type, via a first insulating film. The second control electrode and the third control electrode are electrically connected to the extraction electrode, and face the second semiconductor layer under the extraction electrode, via the second insulating film. At least a part of the second control electrode and the whole of the third control electrode are provided under the extraction electrode. The electrical resistance of the second control electrode is higher than the electrical resistance of the third control electrode.

Abstract: A light emitting module according to one embodiment includes a substrate; a light emitting body disposed on the substrate; a first phosphor which is excited by emitted light of the light emitting body; and a second phosphor which is arranged between the first phosphor and the light emitting body. The first phosphor has a light emitting peak whose half-value width is 20 nm or less in a wavelength range from 610 nm to less than 650 nm. The second phosphor is excited by the emitted light of the light emitting body, and has the light emitting peak in the wavelength range between a peak wavelength of a light emitting spectrum of the light emitting body and the peak wavelength of the light emitting spectrum of the first phosphor.

Abstract: A light emitting module according to one embodiment includes a substrate; a light emitting body disposed on the substrate; and a phosphor layer having a first phosphor and a second phosphor which are excited by emitted light of the light emitting body. The first phosphor has a light emitting peak whose half-value width is 20 nm or less in a wavelength range from 610 nm to less than 650 nm, and the second phosphor has the light emitting peak in the wavelength range between a peak wavelength of a light emitting spectrum of the light emitting body and the peak wavelength of the light emitting spectrum of the first phosphor. Then, a distribution of the first phosphor in the phosphor layer has density gradient, where the density of the first phosphor increases toward at least one end of the phosphor layer in a direction perpendicular to the substrate.