Abstract: A laser fixing apparatus includes: a laser light generator that generates laser light to be projected onto a recording medium.

Abstract: A laser fixing apparatus includes a laser light generator that generates laser light to be projected onto a recording medium; and a first condenser that reflects and condenses light reflected at an irradiation position of the laser light, such that the reflected light reenters at the irradiation position or near the irradiation position. The first condenser has a concave cylindrical surface and is arranged such that a center axis position of the cylindrical surface is located at the irradiation position of the laser light or near the irradiation position, and a reflecting surface of the first condenser is covered by a light transmitting body.

Abstract: According to an aspect of the invention, a fixing device includes a first laser unit and a second laser unit. The first laser unit outputs a first laser beam to irradiate a visible image formed of image forming material on a recording medium with the first laser beam. The second laser unit outputs a second laser beam to irradiate the visible image with the second laser beam after being irradiated with the first laser beam. The first laser beam and the second laser beam is configured to satisfy relations: W1<W2 and t1>t2, W1 is an optical output per unit area of the first laser beam, W2 is an optical output per unit area of the second laser beam, t1 is an irradiation time per unit area of the first laser beam, and t2 is an irradiation time per unit area of the second laser beam.

Abstract: According to one embodiment, a power semiconductor device includes a first semiconductor layer, and first, second and third semiconductor regions. The first semiconductor layer has a first conductivity type. The first semiconductor regions have a second conductivity type, and are formed with periodicity in a lateral direction in a second semiconductor layer of the first conductivity type. The second semiconductor layer is provided on a major surface of the first semiconductor layer in a device portion with a main current path formed in a vertical direction generally perpendicular to the major surface and in a terminal portion provided around the device portion. The second semiconductor region has the first conductivity type and is a portion of the second semiconductor layer sandwiched between adjacent ones of the first semiconductor regions. The third semiconductor regions have the second conductivity type and are provided below the first semiconductor regions in the terminal portion.

Abstract: According to one embodiment, a semiconductor device includes a first-conductivity-type semiconductor layer, a first and second-conductivity-type semiconductor pillar regions, a second and first-conductivity-type semiconductor regions, a first and second main electrodes, and a control electrode. Each of the first and second-conductivity-type pillar regions extends in a first direction and is alternately provided along a second direction generally perpendicular to the first direction. The second-conductivity-type semiconductor region is provided in a cell region and connected to the second-conductivity-type semiconductor pillar region. The first-conductivity-type semiconductor region is selectively provided in a surface of the second-conductivity-type semiconductor region. The first main electrode is connected to the first-conductivity-type semiconductor layer. The second main electrode is connected to the first and second-conductivity-type semiconductor region.

Abstract: A power semiconductor device includes: a first semiconductor layer of the first conduction type; second semiconductor layers of the first conduction type and third semiconductor layers of the second conduction type alternately provided transversely on the first semiconductor layer; fourth semiconductor layers of the second conduction type provided on the surfaces of the third semiconductor layers; fifth semiconductor layers of the first conduction type provided selectively on the surfaces of the fourth semiconductor layer; sixth semiconductor layers of the second conduction type and seventh semiconductor layers of the first conduction type alternately provided transversely on the second and the third semiconductor layers; a first main electrode electrically connected to the first semiconductor layer; an insulation film provided on the fourth semiconductor layers, the sixth semiconductor layers and the seventh semiconductor layers; a control electrode provided on the fourth semiconductor layers, the sixth semi

Abstract: A transistor contains a first semiconductor layer of a first conductivity type and a drift layer having a pillar structure in which a second semiconductor layer of the first conductivity type and a third semiconductor layer of a second conductivity type are alternately disposed in a direction parallel to a surface of the first semiconductor layer. The fourth semiconductor layer of the first conductivity type and the fifth semiconductor layer of the second conductivity type are alternately disposed and parallel to the drift layer. The fifth semiconductor layer has a larger amount of impurities than the fourth semiconductor layer. The sixth semiconductor layer of the first conductivity type and the seventh semiconductor layer of the second conductivity type are alternately disposed and parallel to the fourth and the fifth semiconductor layers. The seventh semiconductor layer has a smaller amount of impurities than the sixth semiconductor layer.

Abstract: An image forming method includes forming at least one electrostatic charge image on at least one image holding member, developing the at least one electrostatic charge image using a black toner and a color toner to form toner images, transferring toner images to a receiving body, and fixing the toner images by light-irradiation fusing, the black toner being melted in the light-irradiation fusing, the color toner containing an infrared absorber, a light absorptance of the color toner at a peak wavelength of the light irradiated in the light-irradiation fusing being from about 79% to about 98% of a light absorptance of the black toner at the peak wavelength, and the color difference ?E of the color toner due to the presence or absence of the infrared absorber is in a specific range.

Abstract: A power semiconductor device according to an embodiment of the present invention includes a first semiconductor layer of a first or second conductivity type, a second semiconductor layer of the first conductivity type formed on the first semiconductor layer, a third semiconductor layer of the second conductivity type selectively formed on a surface of the second semiconductor layer, at least one trench formed in a periphery of the third semiconductor layer on the surface of the second semiconductor layer, a depth of a bottom surface of the at least one trench being deeper than a bottom surface of the third semiconductor layer, and shallower than a top surface of the first semiconductor layer, and some or all of the at least one trench being in contact with a side surface of the third semiconductor layer, at least one insulator buried in the at least one trench, a first main electrode electrically connected to the first semiconductor layer, and a second main electrode electrically connected to the third semico

Abstract: A fixing device includes: a fixing unit that irradiates light to a color material transferred to a medium at a position specified by image data, to fix the color material on the medium; and a control unit that controls irradiation of light of the fixing unit so that an energy of light irradiated to an image-forming area on the medium including an area in which the color material has been transferred at the position specified by the image data is lower than an energy of light irradiated to a non image-forming area on the medium other than the image-forming area.

Abstract: A semiconductor device includes a semiconductor substrate of a first conductivity type, a first semiconductor region of the first conductivity type on the semiconductor substrate, and a plurality of second semiconductor regions of a second conductivity type disposed separately in the first semiconductor region. A difference between a charge quantity expressed by an integral value of a net activated doping concentration in the second semiconductor regions in the surface direction of the semiconductor substrate and a charge quantity expressed by an integral value of a net activated doping concentration in the first semiconductor region in the surface direction of the semiconductor substrate is always a positive quantity and becomes larger from the depth of the first junction plane to a depth of a second junction plane on an opposite side from the first junction plane.

Abstract: A semiconductor device of the invention includes: a super junction structure of an n-type pillar layer and a p-type pillar layer; a base layer provided on the p-type pillar layer; a source layer selectively provided on a surface of the base layer; a gate insulating film provided on a portion being in contact with the base layer, a portion being in contact with the source layer and a portion being in contact with the n-type pillar layer on a portion of a junction between the n-type pillar layer and the p-type pillar layer; a control electrode provided opposed to the base layer, the source layer and the n-type pillar layer through the gate insulating film; and a source electrode electrically connected to the base layer, the source layer and the n-type layer. The source electrode is contact with the surface of the n-type pillar layer located between the control electrodes to form a Schottky junction.

Abstract: Provided is a nanotube-polymer composite which can effectively utilize characteristics of a carbon nanotube structure. The composite includes a carbon nanotube structure and a polymer, in which: the carbon nanotube structure has a network structure constructed by mutually cross-linking functional groups bonded to multiple carbon nanotubes through chemical bonding of the functional groups together; and the polymer is filled in the network structure.

Abstract: A high-pressure discharge lamp includes a luminous tube, an outer bulb housing the luminous tube, and a diffusing film formed on at least one of inner and outer surfaces of the outer bulb, in which the diffusing film includes first silica particles having shapes different in surface curvature from each other and hollow second silica particles.

Abstract: In a vertical power semiconductor device having the super junction structure both in a device section and a terminal section, an n-type impurity layer is formed on the outer peripheral surface in the super junction structure. This allows an electric field on the outer peripheral surface of the super junction structure region to be reduced. Accordingly, a reliable vertical power semiconductor device of a high withstand voltage can be provided.

Abstract: A perimidine-substituted squarylium dye is represented by the following formula (I):

Abstract: A power semiconductor device according to an embodiment of the present invention includes a first semiconductor layer of a first conductivity type, second semiconductor layers of the first conductivity type and third semiconductor layers of a second conductivity type, which are formed on the first semiconductor layer, have stripe shapes extending in a first horizontal direction, and are alternately arranged along a second horizontal direction orthogonal to the first horizontal direction, a fourth semiconductor layer of the second conductivity type, selectively formed on a surface of one of the third semiconductor layers, a fifth semiconductor layer of the first conductivity type, selectively formed on a surface of the fourth semiconductor layer, and formed into a stripe shape extending in the first horizontal direction without being formed into a stripe shape extending in the second horizontal direction, and a control electrode formed on the second, third, fourth, and fifth semiconductor layers via an insulat

Abstract: A semiconductor device of the invention includes: a super junction structure of an n-type pillar layer and a p-type pillar layer; a base layer provided on the p-type pillar layer; a source layer selectively provided on a surface of the base layer; a gate insulating film provided on a portion being in contact with the base layer, a portion being in contact with the source layer and a portion being in contact with the n-type pillar layer on a portion of a junction between the n-type pillar layer and the p-type pillar layer; a control electrode provided opposed to the base layer, the source layer and the n-type pillar layer through the gate insulating film; and a source electrode electrically connected to the base layer, the source layer and the n-type layer. The source electrode is contact with the surface of the n-type pillar layer located between the control electrodes to form a Schottky junction.

Abstract: An image forming material includes a perimidine-substituted squarylium dye that has a structure represented by the following formula (I) and shows diffraction peaks at least at Bragg angles (2?±0.2°) of 17.7°, 19.9°, 22.1°, 23.2° and 24.9° in its X-ray powder diffraction spectrum measured by irradiation with X rays generated from a Cu target with a wavelength of 1.

Abstract: Provided is a nanotube-polymer composite which can effectively utilize characteristics of a carbon nanotube structure. The composite includes a carbon nanotube structure and a polymer, in which: the carbon nanotube structure has a network structure constructed by mutually cross-linking functional groups bonded to multiple carbon nanotubes through chemical bonding of the functional groups together; and the polymer is filled in the network structure.