Patents by Inventor Mika Okumura

Mika Okumura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10252905
    Abstract: A semiconductor device includes a substrate, a beam, a movable structural body, a first stopper member, a second stopper member and a third stopper member. The first stopper member is arranged with a first gap from the movable structural body in an in-plane direction. The second stopper member is arranged with a second gap from the movable structural body in an out-of-plane direction. The third stopper member is arranged opposite to the second stopper member with the movable structural body interposed therebetween in the out-of-plane direction, and is arranged with a third gap from the movable structural body. Consequently, there can be provided a semiconductor device in which excessive displacement of the movable structural body can be suppressed to thereby suppress damage to and breakage of the beam supporting the movable structural body, and a method of manufacturing the same.
    Type: Grant
    Filed: February 24, 2015
    Date of Patent: April 9, 2019
    Assignee: Mitsubishi Electric Corporation
    Inventor: Mika Okumura
  • Publication number: 20180215606
    Abstract: A semiconductor device includes a substrate, a movable portion provided on the substrate, a junction frame provided on the substrate to surround the movable portion, a cap bonded to the junction frame, the cap having a recessed portion and covering a space over the movable portion with the recessed portion facing the movable portion, the cap having an inside wall provided with irregularities, and a prevention film formed on the inside wall of the cap, the prevention film having irregularities on a surface thereof.
    Type: Application
    Filed: September 11, 2017
    Publication date: August 2, 2018
    Applicant: Mitsubishi Electric Corporation
    Inventors: Yasuo YAMAGUCHI, Mika OKUMURA
  • Publication number: 20170341929
    Abstract: A semiconductor device includes a substrate, a beam, a movable structural body, a first stopper member, a second stopper member and a third stopper member. The first stopper member is arranged with a first gap from the movable structural body in an in-plane direction. The second stopper member is arranged with a second gap from the movable structural body in an out-of-plane direction. The third stopper member is arranged opposite to the second stopper member with the movable structural body interposed therebetween in the out-of-plane direction, and is arranged with a third gap from the movable structural body. Consequently, there can be provided a semiconductor device in which excessive displacement of the movable structural body can be suppressed to thereby suppress damage to and breakage of the beam supporting the movable structural body, and a method of manufacturing the same.
    Type: Application
    Filed: February 24, 2015
    Publication date: November 30, 2017
    Applicant: Mitsubishi Electric Corporation
    Inventor: Mika OKUMURA
  • Patent number: 8618666
    Abstract: A semiconductor device includes a semiconductor substrate, electrodes separated from each other and extending from a first main surface in the direction of depth of the semiconductor substrate, and an interconnect portion coupling the electrodes to each other and extending from the first main surface in the direction of depth of the semiconductor substrate without passing through the semiconductor substrate. One of the electrodes is a through electrode passing through the semiconductor substrate to reach a second main surface. For semiconductor devices having through electrodes and vertically stacked on each other, the interconnect portion serves to enhance the degree of design freedom.
    Type: Grant
    Filed: June 1, 2010
    Date of Patent: December 31, 2013
    Assignee: Mitsubishi Electric Corporation
    Inventors: Mika Okumura, Makio Horikawa, Takeshi Murakami
  • Patent number: 8390121
    Abstract: A semiconductor device includes a substrate, an element formed on the substrate, a nitride film formed on the substrate, a anti-peel film formed on the nitride film, and a molded resin covering the anti-peel film and the element. The anti-peel film has residual compressive stress.
    Type: Grant
    Filed: February 11, 2011
    Date of Patent: March 5, 2013
    Assignee: Mitsubishi Electric Corporation
    Inventors: Mika Okumura, Yasuo Yamaguchi, Takeshi Murakami
  • Patent number: 8304899
    Abstract: A recessed portion is provided in first and second insulating films, the first insulating film being stacked on a semiconductor wafer, the second insulating film being stacked on the first insulating film. The first and second insulating films are processed to form wiring in a formation region of the semiconductor wafer in which an acceleration sensor is to be formed. After a sacrificial film is stacked on the wiring and processed, a conductive film is stacked on the wiring and processed to form a plurality of thin film structures in the formation region. The recessed portion surrounds the formation region.
    Type: Grant
    Filed: July 14, 2008
    Date of Patent: November 6, 2012
    Assignee: Mitsubishi Electric Corporation
    Inventors: Mika Okumura, Makio Horikawa, Kimitoshi Satou, Yasuo Yamaguchi
  • Publication number: 20120160029
    Abstract: An acceleration sensor of the present invention comprises a first mass body which is held by first beams and can be displaced by acceleration, fixed electrodes which are so arranged as to convert the displacement of the first mass body into the quantity of electricity, and a displaceability changing member for changing the displaceability of the first mass body when the displacement of the first mass body exceeds a predetermined range.
    Type: Application
    Filed: August 3, 2011
    Publication date: June 28, 2012
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Yasuo YAMAGUCHI, Mika Okumura, Takeshi Murakami
  • Patent number: 8193631
    Abstract: A first interconnection is formed along a groove of a substrate and on a bottom surface of the groove, and has a first thickness. A second interconnection is electrically connected to the first interconnection and has a second thickness larger than the first thickness. An acceleration sensing unit is electrically connected to the second interconnection. A sealing unit has a portion opposed to the substrate with the first interconnection therebetween, and surrounds the second interconnection and the acceleration sensing unit on the substrate. A cap is arranged on the sealing unit to form a cavity on a region of the substrate surrounded by the sealing unit. Thereby, airtightness of the cavity can be ensured and also an electric resistance of the interconnection connected to the acceleration sensing unit can be reduced.
    Type: Grant
    Filed: June 30, 2008
    Date of Patent: June 5, 2012
    Assignee: Mitsubishi Electric Corporation
    Inventors: Kimitoshi Sato, Mika Okumura, Yasuo Yamaguchi, Makio Horikawa
  • Publication number: 20110303992
    Abstract: A semiconductor device includes a substrate, an element formed on the substrate, a nitride film formed on the substrate, a anti-peel film formed on the nitride film, and a molded resin covering the anti-peel film and the element. The anti-peel film has residual compressive stress.
    Type: Application
    Filed: February 11, 2011
    Publication date: December 15, 2011
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Mika OKUMURA, Yasuo Yamaguchi, Takeshi Murakami
  • Patent number: 7900515
    Abstract: First and second semiconductor layers are attached to each other with an insulation layer sandwiched therebetween. An acceleration sensor device is formed in the first semiconductor layer. A control device for controlling the acceleration sensor device is formed on the second semiconductor layer. Through holes are formed in the second semiconductor layer, and an insulation layer is formed to cover the wall surfaces of the through holes. Through interconnections are formed within the through holes for electrically connecting the acceleration sensor device and the control device to each other. Accordingly, it is possible to obtain an acceleration sensor having excellent detection accuracy while having a reduced size, and a fabrication method thereof.
    Type: Grant
    Filed: November 28, 2007
    Date of Patent: March 8, 2011
    Assignee: Mitsubishi Electric Corporation
    Inventors: Yasuo Yamaguchi, Makio Horikawa, Mika Okumura, Kimitoshi Sato, Takeshi Murakami
  • Publication number: 20110042811
    Abstract: A semiconductor device includes a semiconductor substrate, electrodes separated from each other and extending from a first main surface in the direction of depth of the semiconductor substrate, and an interconnect portion coupling the electrodes to each other and extending from the first main surface in the direction of depth of the semiconductor substrate without passing through the semiconductor substrate. One of the electrodes is a through electrode passing through the semiconductor substrate to reach a second main surface. For semiconductor devices having through electrodes and vertically stacked on each other, the interconnect portion serves to enhance the degree of design freedom.
    Type: Application
    Filed: June 1, 2010
    Publication date: February 24, 2011
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Mika OKUMURA, Makio HORIKAWA, Takeshi MURAKAMI
  • Publication number: 20090230485
    Abstract: A recessed portion is provided in first and second insulating films, the first insulating film being stacked on a semiconductor wafer, the second insulating film being stacked on the first insulating film. The first and second insulating films are processed to form wiring in a formation region of the semiconductor wafer in which an acceleration sensor is to be formed. After a sacrificial film is stacked on the wiring and processed, a conductive film is stacked on the wiring and processed to form a plurality of thin film structures in the formation region. The recessed portion surrounds the formation region.
    Type: Application
    Filed: July 14, 2008
    Publication date: September 17, 2009
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Mika OKUMURA, Makio Horikawa, Kimitoshi Satou, Yasuo Yamaguchi
  • Publication number: 20090166623
    Abstract: A first interconnection is formed along a groove of a substrate and on a bottom surface of the groove, and has a first thickness. A second interconnection is electrically connected to the first interconnection and has a second thickness larger than the first thickness. An acceleration sensing unit is electrically connected to the second interconnection. A sealing unit has a portion opposed to the substrate with the first interconnection therebetween, and surrounds the second interconnection and the acceleration sensing unit on the substrate. A cap is arranged on the sealing unit to form a cavity on a region of the substrate surrounded by the sealing unit. Thereby, airtightness of the cavity can be ensured and also an electric resistance of the interconnection connected to the acceleration sensing unit can be reduced.
    Type: Application
    Filed: June 30, 2008
    Publication date: July 2, 2009
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Kimitoshi SATO, Mika OKUMURA, Yasuo YAMAGUCHI, Makio HORIKAWA
  • Patent number: 7533570
    Abstract: In an electrostatic-capacitance-type acceleration sensor, water, etc. penetrating into a sealed space incorporating an acceleration detector having a movable electrode 6, and sticking of the movable electrode 6 to a cap 8 due to static charge accumulated on the cap 8 during the anodic bonding being performed are prevented. A conductive shielding film 9 that can be extendedly transformed on the entire inner face of the cap 8 constituting the sealed space is provided, which is not only extendedly arranged so as to be sandwiched between a bonding frame 7 and the cap 8, but also electrically connected to the movable electrode 6; thereby, even if unevenness exists on the surface of the bonding frame 7, not only sufficient anodic bonding between the bonding frame 7 and the cap 8 becomes possible, but also the electric field due to the static charge accumulated in the cap 8 can be shielded.
    Type: Grant
    Filed: April 6, 2006
    Date of Patent: May 19, 2009
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Yasuo Yamaguchi, Makio Horikawa, Mika Okumura, Kimitoshi Satou
  • Patent number: 7495301
    Abstract: A thin film structure including a conductive thin film provided on a substrate and configured to be displaced in response to an applied acceleration, a pair of electrode pads formed on the substrate such that the pair of electrode pads are disposed on respective sides of the thin film, and a nonconductive film covering a top surface of the thin film and the side of the thin film facing the electrode pads. A top surface of the conductive thin film being higher than top surfaces of the electrode pads.
    Type: Grant
    Filed: February 24, 2006
    Date of Patent: February 24, 2009
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Mika Okumura, Makio Horikawa, Kimitoshi Satou
  • Publication number: 20080302184
    Abstract: First and second semiconductor layers are attached to each other with an insulation layer sandwiched therebetween. An acceleration sensor device is formed in the first semiconductor layer. A control device for controlling the acceleration sensor device is formed on the second semiconductor layer. Through holes are formed in the second semiconductor layer, and an insulation layer is formed to cover the wall surfaces of the through holes. Through interconnections are formed within the through holes for electrically connecting the acceleration sensor device and the control device to each other. Accordingly, it is possible to obtain an acceleration sensor having excellent detection accuracy while having a reduced size, and a fabrication method thereof.
    Type: Application
    Filed: November 28, 2007
    Publication date: December 11, 2008
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Yasuo Yamaguchi, Makio Horikawa, Mika Okumura, Kimitoshi Sato, Takeshi Murakami
  • Patent number: 7371600
    Abstract: A thin-film structural body formed by using a semiconductor processing technique and a manufacturing method thereof, and particularly a thin-film structural body constituting a semiconductor acceleration sensor and a manufacturing method thereof. The thin-film structural body allows the thin-film member to be easily stress-controlled, and easily makes the film-thickness of the thin-film member thicker. The thin-film member forms a mass body and, beams and fixed electrodes of the semiconductor acceleration sensor are constituted by a plurality of doped polysilicon thin-films that are laminated by performing a step of film deposition of polysilicon while, for example, phosphorous is being doped as impurities plural times.
    Type: Grant
    Filed: June 13, 2001
    Date of Patent: May 13, 2008
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Kiyoshi Ishibashi, Makio Horikawa, Mika Okumura, Masaaki Aoto, Daisaku Yoshida, Hirofumi Takakura
  • Publication number: 20070062285
    Abstract: In an electrostatic-capacitance-type acceleration sensor, water, etc. penetrating into a sealed space incorporating an acceleration detector having a movable electrode 6, and sticking of the movable electrode 6 to a cap 8 due to static charge accumulated on the cap 8 during the anodic bonding being performed are prevented. A conductive shielding film 9 that can be extendedly transformed on the entire inner face of the cap 8 constituting the sealed space is provided, which is not only extendedly arranged so as to be sandwiched between a bonding frame 7 and the cap 8, but also electrically connected to the movable electrode 6; thereby, even if unevenness exists on the surface of the bonding frame 7, not only sufficient anodic bonding between the bonding frame 7 and the cap 8 becomes possible, but also the electric field due to the static charge accumulated in the cap 8 can be shielded.
    Type: Application
    Filed: April 6, 2006
    Publication date: March 22, 2007
    Applicant: MITSUBISHI DENKI KABUSHIKI KAISHA
    Inventors: Yasuo YAMAGUCHI, Makio Horikawa, Mika Okumura, Kimitoshi Satou
  • Publication number: 20070031638
    Abstract: The present invention provides a thin film structure configured such that: thin films 8a and 8b and an electrode pad 7 are provided on a substrate 5; and a nonconductive shielding film 11 is formed on the sides of the thin films 8a facing the electrode pad 7 such that the top surface of the shielding film 11 is higher than the top surface of the electrode pad 7. That is, the shielding film 11 covers the top surfaces and sides of the thin films 8a between adjacent electrode pads. This arrangement allows one to reduce the parasitic capacitance between adjacent electrode pads and prevent a change in the characteristics, as well as canceling the fringe effect.
    Type: Application
    Filed: February 24, 2006
    Publication date: February 8, 2007
    Applicant: MITSUBISHI DENKI KABUSHIKI KAISHA
    Inventors: Mika OKUMURA, Makio Horikawa, Kimitoshi Satou
  • Patent number: 7094620
    Abstract: A semiconductor device manufacturing method includes forming an insulating layer on a semiconductor substrate, forming, over the insulating layer, a first sacrificial layer having a first opening, and forming, on the sacrificial layer, a first electrode and a dummy body between the first electrode and the first opening. A photoresist is formed on the structure obtained by the previous steps, the photoresist having a second opening that opens inside the first opening. The insulating layer is etched using the photoresist as a mask to expose the semiconductor substrate, and a second electrode is formed in contact with the exposed semiconductor substrate. The sacrificial layer is removed.
    Type: Grant
    Filed: January 29, 2003
    Date of Patent: August 22, 2006
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Mika Okumura, Makio Horikawa, Kimitoshi Satou