Abstract: A composite material includes a plurality of first layers and a plurality of second layers. The total number of the first and second layers is 5 or more. The first and second layers are stacked alternately in the thickness direction of the composite material, such that the first layer is located at each of the first and second surfaces. The first layers are formed from a metal material containing copper as a main component. The second layer includes a molybdenum plate and a coper filler. The molybdenum plate has first and second faces that are each an end face in the thickness direction, and a plurality of openings extending through the molybdenum plate from the first face to the second face.

Abstract: The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device 10 including an oxide semiconductor film 14 formed using the oxide sintered material.

Abstract: The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device 10 including an oxide semiconductor film 14 formed using the oxide sintered material.

Abstract: Provided is a semiconductor device including: a gate electrode; a channel layer arranged in a region directly below or directly above the gate electrode; a source and a drain electrodes arranged to be in contact with the channel layer; and a first insulating layer arranged between the gate electrode and the channel layer, the channel layer including a first oxide semiconductor, the source electrode and/or the drain electrode including a second oxide semiconductor, the first and second oxide semiconductors containing In, W and Zn, a content rate of W/(In+W+Zn) being higher than 0.001 atomic % and not higher than 8.0 atomic %, a content rate of Zn/(In+W+Zn) being from 1.2 atomic % to 40 atomic %, an atomic ratio of Zn to W being higher than 1.0 and lower than 20000. Also provided is a method for manufacturing the device.

Abstract: Provided are: an oxide sintered material including an In2O3 crystal phase, a Zn4In2O7 crystal phase and a ZnWO4 crystal phase, wherein the roundness of crystal particles composed of the ZnWO4 crystal phase is 0.01 or more and less than 0.7; a method for producing the oxide sintered material; and a method for manufacturing a semiconductor device including an oxide semiconductor film that is formed by using the oxide sintered material as a sputter target.

Abstract: There are provided an oxide sintered material containing an In2O3 crystal phase, a Zn4In2O7 crystal phase and a ZnWO4 crystal phase, and a method of producing the oxide sintered material. The method includes forming the oxide sintered material by sintering a molded body containing In, W and Zn, and forming the oxide sintered material including placing the molded body at a first constant temperature selected from a temperature range of 500° C. or more and 1000° C. or less for 30 minutes or longer.

Abstract: There is provided an oxide sintered body including indium, tungsten and zinc, wherein the oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.6 g/cm3 and equal to or lower than 7.5 g/cm3, a content rate of tungsten to a total of indium, tungsten and zinc in the oxide sintered body is higher than 0.5 atomic % and equal to or lower than 5.0 atomic %, a content rate of zinc to the total of indium, tungsten and zinc in the oxide sintered body is equal to or higher than 1.2 atomic % and equal to or lower than 19 atomic %, and an atomic ratio of zinc to tungsten is higher than 1.0 and lower than 60. There are also provided a sputtering target including this oxide sintered body, and a semiconductor device.

Abstract: The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device 10 including an oxide semiconductor film 14 formed using the oxide sintered material.

Abstract: The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor device 10 including an oxide semiconductor film 14 formed using the oxide sintered material.

Abstract: There is provided an oxide sintered material containing indium, tungsten, and zinc, the oxide sintered material including: a first crystal phase that is a main component of the oxide sintered material and includes a bixbyite type crystal phase; and a second crystal phase having a content of the zinc higher than a content of the zinc in the first crystal phase, the second crystal phase including particles having an average major axis size of not less than 3 ?m and not more than 50 ?m and having an average aspect ratio of not less than 4 and not more than 50.

Abstract: There are provided an oxide sintered material and a method of manufacturing the same as well as an oxide semiconductor film. The oxide sintered material contains In, W and Zn, includes an In2O3 crystal phase and an In2(ZnO)mO3 crystal phase (m represents a natural number), and an average number of oxygen atoms coordinated to an indium atom is 3 or more and less than 5.5. The oxide semiconductor film contains In, W and Zn. The oxide semiconductor film is amorphous, and an average number of oxygen atoms coordinated to an indium atom is 2 or more and less than 4.5.

Abstract: Provided are: an oxide sintered material including an In2O3 crystal phase, a Zn4In2O7 crystal phase and a ZnWO4 crystal phase, wherein the roundness of crystal particles composed of the ZnWO4 crystal phase is 0.01 or more and less than 0.7; a method for producing the oxide sintered material; and a method for manufacturing a semiconductor device including an oxide semiconductor film that is formed by using the oxide sintered material as a sputter target.

Abstract: There is provided an oxide sintered body including indium, tungsten and zinc, wherein the oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.5 g/cm3 and equal to or lower than 7.1 g/cm3, a content rate of tungsten to a total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %, and a content rate of zinc to the total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %. There are also provided a sputtering target including this oxide sintered body, and a semiconductor device including an oxide semiconductor film formed by a sputtering method by using the sputtering target.

Abstract: There is provided an oxide sintered body including indium, tungsten and zinc, wherein the oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.6 g/cm3 and equal to or lower than 7.5 g/cm3, a content rate of tungsten to a total of indium, tungsten and zinc in the oxide sintered body is higher than 0.5 atomic % and equal to or lower than 5.0 atomic %, a content rate of zinc to the total of indium, tungsten and zinc in the oxide sintered body is equal to or higher than 1.2 atomic % and equal to or lower than 19 atomic %, and an atomic ratio of zinc to tungsten is higher than 1.0 and lower than 60. There are also provided a sputtering target including this oxide sintered body, and a semiconductor device.

Abstract: Provided is a semiconductor device including: a gate electrode; a channel layer arranged in a region directly below or directly above the gate electrode; a source and a drain electrodes arranged to be in contact with the channel layer; and a first insulating layer arranged between the gate electrode and the channel layer, the channel layer including a first oxide semiconductor, the source electrode and/or the drain electrode including a second oxide semiconductor, the first and second oxide semiconductors containing In, W and Zn, a content rate of W/(In+W+Zn) being higher than 0.001 atomic % and not higher than 8.0 atomic %, a content rate of Zn/(In+W+Zn) being from 1.2 atomic % to 40 atomic %, an atomic ratio of Zn to W being higher than 1.0 and lower than 20000. Also provided is a method for manufacturing the device.

Abstract: There are provided an oxide sintered material containing an In2O3 crystal phase, a Zn4In2O7 crystal phase and a ZnWO4 crystal phase, and a method of producing the oxide sintered material. The method includes forming the oxide sintered material by sintering a molded body containing In, W and Zn, and forming the oxide sintered material including placing the molded body at a first constant temperature selected from a temperature range of 500° C. or more and 1000° C. or less for 30 minutes or longer.

Abstract: There is provided an oxide sintered body including indium, tungsten and zinc, wherein the oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.6 g/cm3 and equal to or lower than 7.5 g/cm3, a content rate of tungsten to a total of indium, tungsten and zinc in the oxide sintered body is higher than 0.5 atomic % and equal to or lower than 5.0 atomic %, a content rate of zinc to the total of indium, tungsten and zinc in the oxide sintered body is equal to or higher than 1.2 atomic % and equal to or lower than 19 atomic %, and an atomic ratio of zinc to tungsten is higher than 1.0 and lower than 60. There are also provided a sputtering target including this oxide sintered body, and a semiconductor device (10).

Abstract: Provided are a semiconductor device and a method for manufacturing the same, the device including a channel layer including an oxide semiconductor containing In, W, and Zn, a content of W relative to a total of In, W, and Zn in the channel layer being more than 0.01 atom % and less than or equal to 8.0 atom %, the channel layer including a first region, a second region, and a third region in this order, the first region including a first surface in contact with the gate insulating layer, the third region including a second surface opposite to the first surface, a content W3 (atom %) of W relative to a total of In, W, and Zn in the third region being larger than a content W2 (atom %) of W relative to a total of In, W, and Zn in the second region.

Abstract: There is provided an oxide sintered body including indium, tungsten and zinc, wherein the oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.6 g/cm3 and equal to or lower than 7.5 g/cm3, a content rate of tungsten to a total of indium, tungsten and zinc in the oxide sintered body is higher than 0.5 atomic % and equal to or lower than 5.0 atomic %, a content rate of zinc to the total of indium, tungsten and zinc in the oxide sintered body is equal to or higher than 1.2 atomic % and equal to or lower than 19 atomic %, and an atomic ratio of zinc to tungsten is higher than 1.0 and lower than 60. There are also provided a sputtering target including this oxide sintered body, and a semiconductor device.

Abstract: There is provided an oxide sintered body including indium, tungsten and zinc, wherein the oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.5 g/cm3 and equal to or lower than 7.1 g/cm3, a content rate of tungsten to a total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %, and a content rate of zinc to the total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %. There are also provided a sputtering target including this oxide sintered body, and a semiconductor device including an oxide semiconductor film formed by a sputtering method by using the sputtering target.