Abstract: A first connector is fluid-tightly fitted with a second connector through an opening of a mounting wall. The first connector includes a cylindrical spacer fitted into the opening, and a housing having a support part and a housing body. The support part is mounted to a first surface of the mounting wall while being able to be displaced along a plane perpendicular to a connector fitting direction of the first and second connectors. The housing body has a leading end which is inserted in the opening with a clearance. A first ring-shaped seal member is interposed between the opening and the spacer, a second ring-shaped seal member is interposed between the spacer and the support part in the connector fitting direction, and a third ring-shaped seal member is interposed between the second connector and the leading end.

Abstract: The present invention provides a composition for controlling harmful arthropods having an excellent control efficacy on harmful arthropods. A composition for controlling harmful arthropods comprising an amide compound represented by a formula (I); wherein each of symbols are the same as defined in the Description; or salts thereof and at least one kind of neonicotinoid compounds selected from the group (A) consisting of imidacloprid, clothianidin, thiamethoxiam, dinotefuran, acetamiprid, thiacloprid and nitenpyram, shows an excellent controlling efficacy on harmful arthropods.

Abstract: To provide a semiconductor device including an oxide semiconductor which is capable of having stable electric characteristics and achieving high reliability, by a dehydration or dehydrogenation treatment performed on a base insulating layer provided in contact with an oxide semiconductor layer, the water and hydrogen contents of the base insulating layer can be decreased, and by an oxygen doping treatment subsequently performed, oxygen which can be eliminated together with the water and hydrogen is supplied to the base insulating layer. By formation of the oxide semiconductor layer in contact with the base insulating layer whose water and hydrogen contents are decreased and whose oxygen content is increased, oxygen can be supplied to the oxide semiconductor layer while entry of the water and hydrogen into the oxide semiconductor layer is suppressed.

Abstract: A connector includes a female connector and a male connector fitted in a hood of the female connector. The female connector includes: paired guide grooves either provided at opposed positions on an inside wall of the hood; and regulation projections either provided on bottom surfaces of the paired guide grooves. The male connector includes paired guide ribs provided on an outer periphery of the male connector. The paired guide ribs either positioned in the paired guide grooves with the female connector and the male connector being fitted together regulate a relative rotational movement between the female and male connector. The regulation projections either in contact with the paired guide ribs regulate a relative vertical and transverse movement between the female and male connectors.

Abstract: A connector includes: a housing including terminal accommodating chambers, and lances projecting into the terminal accommodating chambers and capable of withdrawing from the terminal accommodating chambers due to elastic deformation of the lances; terminals inserted into the terminal accommodating chambers and each including a terminal contact part formed on its leading side for contact with a mating terminal and an engagement part foamed for engagement with respective lance and a front holder fitted to a front part of the housing to move between a formal engagement position and a temporary engagement position to hold the terminal contact part. The housing is provided with an opening which exposes engagement points between the lances and the engagement parts in a direction generally perpendicular to an elastically-deformable direction of the lances.

Abstract: A connection structure includes a column electrode; a first connecting portion connected to one end of the column electrode; and a second connecting portion connected to another end of the column electrode via solder, wherein a height of the column electrode is a width of the first connecting portion or greater.

Abstract: To provide a semiconductor device including an oxide semiconductor which is capable of having stable electric characteristics and achieving high reliability, by a dehydration or dehydrogenation treatment performed on a base insulating layer provided in contact with an oxide semiconductor layer, the water and hydrogen contents of the base insulating layer can be decreased, and by an oxygen doping treatment subsequently performed, oxygen which can be eliminated together with the water and hydrogen is supplied to the base insulating layer. By formation of the oxide semiconductor layer in contact with the base insulating layer whose water and hydrogen contents are decreased and whose oxygen content is increased, oxygen can be supplied to the oxide semiconductor layer while entry of the water and hydrogen into the oxide semiconductor layer is suppressed.

Abstract: To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.

Abstract: To provide a semiconductor device including an oxide semiconductor which is capable of having stable electric characteristics and achieving high reliability, by a dehydration or dehydrogenation treatment performed on a base insulating layer provided in contact with an oxide semiconductor layer, the water and hydrogen contents of the base insulating layer can be decreased, and by an oxygen doping treatment subsequently performed, oxygen which can be eliminated together with the water and hydrogen is supplied to the base insulating layer. By formation of the oxide semiconductor layer in contact with the base insulating layer whose water and hydrogen contents are decreased and whose oxygen content is increased, oxygen can be supplied to the oxide semiconductor layer while entry of the water and hydrogen into the oxide semiconductor layer is suppressed.

Abstract: A connector includes: a housing including terminal accommodating chambers, and lances projecting into the terminal accommodating chambers and capable of withdrawing from the terminal accommodating chambers due to elastic deformation of the lances; terminals inserted into the terminal accommodating chambers and each including a terminal contact part formed on its leading side for contact with a mating terminal and an engagement part foamed for engagement with respective lance and a front holder fitted to a front part of the housing to move between a formal engagement position and a temporary engagement position to hold the terminal contact part. The housing is provided with an opening which exposes engagement points between the lances and the engagement parts in a direction generally perpendicular to an elastically-deformable direction of the lances.

Abstract: A first connector is fluid-tightly fitted with a second connector through an opening of a mounting wall. The first connector includes a cylindrical spacer fitted into the opening, and a housing having a support part and a housing body. The support part is mounted to a first surface of the mounting wall while being able to be displaced along a plane perpendicular to a connector fitting direction of the first and second connectors. The housing body has a leading end which is inserted in the opening with a clearance. A first ring-shaped seal member is interposed between the opening and the spacer, a second ring-shaped seal member is interposed between the spacer and the support part in the connector fitting direction, and a third ring-shaped seal member is interposed between the second connector and the leading end.

Abstract: A semiconductor device is provided, which includes a single crystal semiconductor layer formed over an insulating surface and having a source region, a drain region, and a channel formation region, a gate insulating film covering the single crystal semiconductor layer and a gate electrode overlapping with the channel formation region with the gate insulating film interposed therebetween. In the semiconductor device, at least the drain region of the source and drain regions includes a first impurity region adjacent to the channel formation region and a second impurity region adjacent to the first impurity region. A maximum of an impurity concentration distribution in the first impurity region in a depth direction is closer to the insulating surface than a maximum of an impurity concentration distribution in the second impurity region in a depth direction.

Abstract: A terminal device may include: a communication interface to receive, from a server via a network, a file for updating software in a memory device coupled with the terminal device, and a software update table that includes data regarding one or more performance values and one or more time values indicative of one or more lengths of time taken to update the software using the file; a processor to obtain data regarding a performance value of the memory device, select, from the software update table, one of the one or more performance values based on the performance value of the memory device, and obtain, from the software update table, a time value associated with the selected performance value; and an output device to provide an output corresponding to the obtained time value. Each performance value is associated with one of the one or more time values, respectively.

Abstract: The present invention provides a composition for controlling harmful arthropods having an excellent control efficacy on harmful arthropods. A composition for controlling harmful arthropods comprising an amide compound represented by a formula (I); wherein each of symbols are the same as defined in the Description; or salts thereof and at least one kind of neonicotinoid compounds selected from the group (A) consisting of imidacloprid, clothianidin, thiamethoxiam, dinotefuran, acetamiprid, thiacloprid and nitenpyram, shows an excellent controlling efficacy on harmful arthropods.

Abstract: The present invention provides a composition for controlling harmful arthropods having an excellent control efficacy on harmful arthropods. A composition for controlling harmful arthropods comprising an amide compound represented by a formula (I); wherein each of symbols are the same as defined in the Description; or salts thereof, and at least one kind of neonicotinoid compounds selected from the group (A) consisting of imidacloprid, clothianidin, thiamethoxiam, dinotefuran, acetamiprid, thiacloprid and nitenpyram, shows an excellent controlling efficacy on harmful arthropods.

Abstract: The present invention provides a composition for controlling harmful arthropods having an excellent control efficacy on harmful arthropods. A composition for controlling harmful arthropods comprising a carboxylic acid compound represented by a formula (I); wherein each of symbols are the same as defined in the Description; or salts thereof and at least one kind of neonicotinoid compounds selected from the group (A) consisting of imidacloprid, clothianidin, thiamethoxiam, dinotefuran, acetamiprid, thiacloprid and nitenpyram, shows an excellent controlling efficacy on harmful arthropods.

Abstract: A semiconductor device is provided, which includes a single crystal semiconductor layer formed over an insulating surface and having a source region, a drain region, and a channel formation region, a gate insulating film covering the single crystal semiconductor layer and a gate electrode overlapping with the channel formation region with the gate insulating film interposed therebetween. In the semiconductor device, at least the drain region of the source and drain regions includes a first impurity region adjacent to the channel formation region and a second impurity region adjacent to the first impurity region. A maximum of an impurity concentration distribution in the first impurity region in a depth direction is closer to the insulating surface than a maximum of an impurity concentration distribution in the second impurity region in a depth direction.

Abstract: The present invention provides a composition for controlling harmful arthropods having an excellent control efficacy on harmful arthropods. A composition for controlling harmful arthropods comprising an amide compound represented by a formula (I); wherein each of symbols are the same as defined in the Description; or salts thereof and at least one kind of neonicotinoid compounds selected from the group (A) consisting of imidacloprid, clothianidin, thiamethoxiam, dinotefuran, acetamiprid, thiacloprid and nitenpyram, shows an excellent controlling efficacy on harmful arthropods.

Abstract: The present invention provides a composition for controlling harmful arthropods having an excellent control efficacy on harmful arthropods. A composition for controlling harmful arthropods comprising an amide compound represented by a formula (I); wherein each of symbols are the same as defined in the Description; or salts thereof and at least one kind of neonicotinoid compounds selected from the group (A) consisting of imidacloprid, clothianidin, thiamethoxiam, dinotefuran, acetamiprid, thiacloprid and nitenpyram, shows an excellent controlling efficacy on harmful arthropods.

Abstract: A terminal device may include: a communication interface to receive, from a server via a network, a file for updating software in a memory device coupled with the terminal device, and a software update table that includes data regarding one or more performance values and one or more time values indicative of one or more lengths of time taken to update the software using the file; a processor to obtain data regarding a performance value of the memory device, select, from the software update table, one of the one or more performance values based on the performance value of the memory device, and obtain, from the software update table, a time value associated with the selected performance value; and an output device to provide an output corresponding to the obtained time value. Each performance value is associated with one of the one or more time values, respectively.