Patents by Inventor Mikihiko Oogane

Mikihiko Oogane has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190137578
    Abstract: A magnetic sensor includes a substrate that has a main surface, a free layer that has a magnetic easy axis in an in-plane direction parallel to the main surface, an intermediate layer that is disposed between the substrate and the free layer, and a fixed layer that is disposed between the substrate and the intermediate layer. The fixed layer includes: a first ferromagnetic layer a magnetization direction of which is fixed in a first direction that is nonparallel to the main surface; a second ferromagnetic layer a magnetization direction of which is fixed in a second direction in which a component of a direction parallel to a normal line of the main surface is opposite to the first direction; and a nonmagnetic layer that is disposed between the first ferromagnetic layer and the second ferromagnetic layer.
    Type: Application
    Filed: December 27, 2018
    Publication date: May 9, 2019
    Inventors: Takamoto FURUICHI, Kenichi AO, Yasuo ANDO, Mikihiko OOGANE, Takafumi NAKANO
  • Publication number: 20190044058
    Abstract: A tunnel magnetic resistance element includes the following, a fixed magnetic layer with a fixed direction of magnetization, a free magnetic layer in which the direction of magnetization changes, and an insulating layer which is positioned between the fixed magnetic layer and the free magnetic layer. The fixed magnetic layer, the free magnetic layer, and the insulating layer form a magnetic tunnel junction. A resistance of the insulating layer changes by a tunnel effect according to a difference in an angle between the direction of magnetization of the fixed magnetic layer and the direction of magnetization of the free magnetic layer. The free magnetic layer includes a ferromagnetic layer, a soft magnetic layer, and a magnetic bonding layer placed in between. Material of the magnetic bonding layer include Ru or Ta, and a layer thickness is 1.0 nm to 1.3 nm.
    Type: Application
    Filed: February 16, 2017
    Publication date: February 7, 2019
    Inventors: Yasuo ANDO, Mikihiko OOGANE, Kosuke KUJIWARA, Junichi JONO
  • Publication number: 20190018083
    Abstract: There are provided: an element array 10a including a plurality of tunnel magnetoresistive elements 20 respectively having a fixed magnetic layer 21, a free magnetic layer 22, and an insulation layer 23 provided between the fixed magnetic layer 21 and the free magnetic layer 22, the elements respectively for varying the tunnel resistance of the insulation layer 23 by influence of an external magnetic field; and an electric circuit 30 that applies a voltage to a plurality of the tunnel magnetoresistive elements 20 forming the element array 10a, with the voltage to be applied to each tunnel magnetoresistive element being equal to or higher than 0.1 mV and equal to or lower than 50 mV.
    Type: Application
    Filed: December 28, 2016
    Publication date: January 17, 2019
    Inventors: Kousuke FUJIWARA, Mikihiko Oogane, Yasuo Ando, Junichi JONO
  • Patent number: 9905752
    Abstract: A magneto-resistance element includes a resistance variable layer and a trap layer. The resistance variable layer includes the alloy having B. A resistance of the resistance variable layer changes according to a magnetic field. The trap layer is for trapping the B diffused from the resistance variable layer. With this structure, the B in the resistance variable layer becomes easily trapped in the trap layer and becomes difficult to be diffused to an outside of the magneto-resistance element. A difficulty associated with B diffusion to the outside of the magneto-resistance element can be prevented from occurring.
    Type: Grant
    Filed: August 8, 2014
    Date of Patent: February 27, 2018
    Assignees: DENSO CORPORATION, TOHOKU UNIVERSITY
    Inventors: Toshifumi Yano, Kenichi Ao, Yasuo Ando, Mikihiko Oogane, Takafumi Nakano
  • Patent number: 9753100
    Abstract: A magnetic sensor includes a magnetization fixed layer, a magnetic field detecting layer, and an intermediate layer. The magnetization fixed layer is formed into a thin-film shape, and a magnetization direction of the magnetization fixed layer is fixed in a direction parallel to an in-plane direction. A magnetization direction of the magnetic field detecting layer changes depending on an external magnetic field. The intermediate layer is disposed between the magnetization fixed layer and the magnetic field detecting layer, and a resistance value of the intermediate layer changes depending on an angle between the magnetization direction of the magnetization fixed layer and the magnetization direction of the magnetic field detecting layer. A magnetization amount per unit area of the magnetic field detecting layer is less than 0.2 [memu/cm2].
    Type: Grant
    Filed: February 23, 2015
    Date of Patent: September 5, 2017
    Assignees: DENSO CORPORATION, TOHOKU UNIVERSITY
    Inventors: Toshifumi Yano, Kenichi Ao, Takamoto Furuichi, Yasuo Ando, Mikihiko Oogane, Takafumi Nakano
  • Publication number: 20160341801
    Abstract: A magnetic sensor includes a magnetization fixed layer, a magnetic field detecting layer, and an intermediate layer. The magnetization fixed layer is formed into a thin-film shape, and a magnetization direction of the magnetization fixed layer is fixed in a direction parallel to an in-plane direction. A magnetization direction of the magnetic field detecting layer changes depending on an external magnetic field. The intermediate layer is disposed between the magnetization fixed layer and the magnetic field detecting layer, and a resistance value of the intermediate layer changes depending on an angle between the magnetization direction of the magnetization fixed layer and the magnetization direction of the magnetic field detecting layer. A magnetization amount per unit area of the magnetic field detecting layer is less than 0.2 [memu/cm2].
    Type: Application
    Filed: February 23, 2015
    Publication date: November 24, 2016
    Inventors: Toshifumi YANO, Kenichi AO, Takamoto FURUICHI, Yasuo ANDO, Mikihiko OOGANE, Takafumi NAKANO
  • Publication number: 20160218277
    Abstract: A magneto-resistance element includes a resistance variable layer and a trap layer. The resistance variable layer includes the alloy having B. A resistance of the resistance variable layer changes according to a magnetic field. The trap layer is for trapping the B diffused from the resistance variable layer. With this structure, the B in the resistance variable layer becomes easily trapped in the trap layer and becomes difficult to be diffused to an outside of the magneto-resistance element. A difficulty associated with B diffusion to the outside of the magneto-resistance element can be prevented from occurring.
    Type: Application
    Filed: August 8, 2014
    Publication date: July 28, 2016
    Applicant: DENSO CORPORATION
    Inventors: Toshifumi YANO, Kenichi AO, Yasuo ANDO, Mikihiko OOGANE, Takafumi NAKANO
  • Patent number: 8895162
    Abstract: A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer and having a changeable magnetization direction with an easy axis of magnetization in a direction perpendicular to a film plane; a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer and having a fixed magnetization layer with an easy axis of magnetization in a direction perpendicular to the film plane. The first magnetic layer includes a ferrimagnetic layer having a DO22 structure or an L10 structure, the ferrimagnetic layer has a c-axis oriented in a direction perpendicular to the film plane, and the magnetization direction of the first magnetic layer is changeable by a current flowing through the first magnetic layer, the first nonmagnetic layer, and the second magnetic layer.
    Type: Grant
    Filed: September 19, 2011
    Date of Patent: November 25, 2014
    Assignees: Kabushiki Kaisha Toshiba, National University Corporation Tohoku University
    Inventors: Katsuya Nishiyama, Shigemi Mizukami, Terunobu Miyazaki, Hiroaki Yoda, Tadashi Kai, Tatsuya Kishi, Daisuke Watanabe, Mikihiko Oogane, Yasuo Ando, Masatoshi Yoshikawa, Toshihiko Nagase, Eiji Kitagawa, Tadaomi Daibou, Makoto Nagamine, Chunlan Feng
  • Publication number: 20120088125
    Abstract: A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer and having a changeable magnetization direction with an easy axis of magnetization in a direction perpendicular to a film plane; a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer and having a fixed magnetization layer with an easy axis of magnetization in a direction perpendicular to the film plane. The first magnetic layer includes a ferrimagnetic layer having a DO22 structure or an L10 structure, the ferrimagnetic layer has a c-axis oriented in a direction perpendicular to the film plane, and the magnetization direction of the first magnetic layer is changeable by a current flowing through the first magnetic layer, the first nonmagnetic layer, and the second magnetic layer.
    Type: Application
    Filed: September 19, 2011
    Publication date: April 12, 2012
    Applicants: NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY, KABUSHIKI KAISHA TOSHIBA
    Inventors: Katsuya NISHIYAMA, Wu Feng, Chunlan Feng, Shigemi Mizukami, Terunobu Miyazaki, Hiroaki Yoda, Tadashi Kai, Tatsuya Kishi, Daisuke Watanabe, Mikihiko Oogane, Yasuo Ando, Masatoshi Yoshikawa, Toshihiko Nagase, Eiji Kitagawa, Tadaomi Daibou, Makoto Nagamine