Abstract: A current file is obtained in the data. It is determined whether a similar historical file exists based on a sampled data block from at least one predetermined location in the current file. In response to non-existence of the similar historical file, the current file and corresponding metadata are stored on a file basis. In response to existence of the similar historical file, a deduplication operation is applied on the current file on a block basis.

Abstract: A method of preparation and application for a glass ceramic sealing thin strip with high sealing performance, differing from using conventional glass ceramic packaging paste applied to the junction of the cell stack assembly and connecting plates. The glass ceramic sealing thin strip of present invention utilizes tape casting to produce a single layer or multi-layer stacking in accordance with the required thickness of the glass-ceramic sealing thin strip, and cutting the glass ceramic sealing thin strips from molds in accordance with the geometry of cell stacks with equal thickness of the glass ceramic sealing thin strip for SOFC cell stack assembly, aiming to overcome the setbacks of the conventional dispensing method with glass ceramic packaging paste that makes the thickness difficult to control, and to effectively improve sealing performance of the cell stack assembly and the power generation efficiency, and achieve commercial application with mass production.

Abstract: Provided is a method of making colloidal selenium nanoparticles. The method includes the steps as follows: Step (A): providing a reducing agent and an aqueous solution containing a selenium precursor; Step (B): mixing the aqueous solution containing the selenium precursor and the reducing agent to form a mixture solution in a reaction vessel and heating the mixture solution to undergo a reduction reaction and produce a composition containing selenium nanoparticles, residues and a gas, and guiding the gas out of the reaction vessel, wherein an amount of the residues is less than 20% by volume of the mixture solution; and Step (C): dispersing the selenium nanoparticles with a medium to obtain the colloidal selenium nanoparticles. The method has advantages of simplicity, safety, time-effectiveness, cost-effectiveness, high yield and eco-friendliness.

Abstract: A driving circuit is provided in this present disclosure, the driving circuit includes a voltage input module, a quick start module and a control module. The voltage input module includes a first input terminal and a second input terminal and is configured to receive an alternating current voltage and convert the alternating current voltage into a direct current voltage. The quick start module is coupled to the voltage input module and configured to receive the direct current voltage and convert the direct current voltage into a startup voltage. The control module is coupled to the quick start module and configured to receive the startup voltage and control a load, wherein the quick start module comprises a first resistor and a second resistor connected in series and is coupled between the first input terminal and the control module.

Abstract: Provided is a method of making colloidal platinum nanoparticles. The method includes three consecutive steps: dissolving platinum powders by a halogen-containing oxidizing agent in HCl to obtain an inorganic platinum solution containing an inorganic platinum compound; adding a reducing agent into the same reaction vessel to form a mixture solution and heating the mixture solution to undergo a reduction reaction and produce a composition containing platinum nanoparticles, residues and a gas, and guiding the gas out of the reaction vessel, wherein the amount of the residues is less than 15% by volume of the mixture solution; and adding a medium into the same reaction vessel to disperse the platinum nanoparticles to obtain colloidal platinum nanoparticles. The method is simple, safe, time-effective, cost-effective, and has the advantage of high yield.

Abstract: A semiconductor device includes a semiconductive substrate, a first semiconductive fin and a second semiconductive fin extending upwards from the semiconductive substrate, an isolation structure at least partially between the first semiconductive fin and the second semiconductive fin, a first semiconductive raised portion and a second semiconductive raised portion. The first semiconductive raised portion extends upwards from the semiconductive substrate, is buried under the isolation structure, and is between the first semiconductive fin and the second semiconductive fin. A top surface of the first semiconductive fin is higher than a top surface of the first semiconductive raised portion. The second semiconductive raised portion extends upwards from the semiconductive substrate, is buried under the isolation structure, and is between the first semiconductive raised portion and the second semiconductive fin.

Abstract: Embodiments include a load calculator, a workload analyzer, and a decision module. The load calculator generates an input/output (IO) record for an asset. The IO record includes a count of read operations and write operations corresponding to the asset from each of a plurality of sites. The workload analyzer collects the IO record and generates at least one of a write threshold and a read threshold. The decision module generates a request for at least one of a promotion and a copy of the asset in response to a determination that an operation has reached at least one of the write threshold and the read threshold for the asset.

Abstract: Embodiments for server port virtualization for guest logical unit number (LUN) masking in a host direct attach configuration using a storage adapter in a computing environment by a processor. An F switch port is simulated by an N storage port to enable either N-port virtualization (NPV) or N-port identification (ID) virtualization (NPIV) in the host direct attach configuration by directly attaching the N server port to the N storage port. A domain name system (DNS) operation is performed to cause each virtualized N-port ID to be mapped to fiber channel (FC) IDs in domain format of domain, area, port.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a first source region, a second source region, a first drain region, and a second drain region. The semiconductor device structure includes a first gate structure over the substrate and between the first source region and the first drain region. The semiconductor device structure includes a second gate structure over the substrate and between the second source region and the second drain region. A first thickness of the first gate structure is greater than a second thickness of the second gate structure. A first gate width of the first gate structure is less than a second gate width of the second gate structure.

Abstract: A cold plate for a battery module comprising a plurality of cells that produces heat as charging and discharging is disclosed. The cold plate includes a plurality of first fins distributed in a first subarea of the cold plate; and a plurality of second fins distributed in a second subarea of the cold plate; wherein a second fin coverage of the plurality of second fins distributed in the second subarea is smaller than a first fin coverage of the plurality of first fins distributed in the first subarea when an amount of heat absorption of the second subarea from the plurality of cells is greater than an amount of heat absorption of the first subarea from the plurality of cells.

Abstract: A liquid cooling module comprises a cooling plate, including a plurality of cooling channels for liquid flowing, and a pump block, integrated with the cooling plate and including a pump and a heat exchange chamber connecting to the plurality of cooling channels of the cooling plate, to form a circulation loop.

Abstract: A single-stage driver for an LED device, configured to be coupled between a power supply and the LED device, comprises: a rectifier, a DC-to-DC converter, a resistor and a controller. The rectifier is configured to be coupled to the power supply and convert an alternating voltage from the power supply into a first direct voltage. The DC-to-DC converter, which comprises at least two switches, is coupled between the rectifier and the LED device and configured to receive the first direct voltage and provide a constant current to the LED device. The resistor is configured to be coupled in series with the LED device. The controller is coupled between the resistor and the at least two switches, and configured to keep the current through the LED device stable around a predetermined current value by controlling the switches based on a voltage across the resistor, wherein all the at least two switches are turned on or off synchronously.

Abstract: A Schottky diode includes a cathode terminal in a high voltage region of a semiconductor die, an anode terminal in a low voltage region of the semiconductor die, where the anode terminal and the cathode terminal are separated by a junction isolation termination situated between the high voltage region and the low voltage region. The Schottky diode includes a junction barrier Schottky diode or a trench metal-oxide-semiconductor (MOS) Schottky diode. The junction isolation termination includes pzener rings. The semiconductor die includes a substrate of a first conductivity type, an epitaxial layer of a second conductivity type situated on the substrate, a well region of the second conductivity type situated in the epitaxial layer in the high voltage region, and coupled to the cathode terminal, a Schottky barrier situated on the epitaxial layer in the low voltage region, and coupled to the anode terminal.

Abstract: Methods that copy data from mirrored storage to auxiliary storage arrays co-located with primary storage arrays are provided. One method includes requesting a subset of the data from a backup system mirroring the set of data at a remote location in response to detecting an error in a storage device of an array of primary storage devices storing a set of data. The method further includes receiving the subset of the data from the backup system and storing the subset of the data in an array of auxiliary storage devices co-located with the array of primary storage devices in which the subset of the data can correspond to data stored on the storage device. Systems and computer program products for performing the above method are also provided.