Abstract: Disclosed are an inverter, a NAND gate, and a NOR gate. The inverter includes: a pull-up unit constituted by a second thin film transistor outputting a first power voltage to an output terminal according to a voltage applied to a gate; a pull-down unit constituted by a fifth thin film transistor outputting a ground voltage to the output terminal according to an input signal applied to a gate; and a pull-up driver applying a second power voltage or the ground voltage to the gate of the second thin film transistor according to the input signal.

Abstract: In a Voice over Internet Protocol (VoIP) video communication method and apparatus, first and second VoIP-based terminals store video event indexes and images mapped thereto with respect to state information of a user and terminal, and establish a session using session establishment information defining the video event. The first terminal then transmits a data packet including the video event index, and the second terminal receives the data packet and outputs an image mapped to the video event index of the images stored in advance. Thus, by transmitting and receiving a predefined index alone without transmitting user and terminal states as a real time data-type image, the VoIP video communication method and apparatus prevent unnecessary waste of bandwidth in video communication.

Abstract: Disclosed is a method for manufacturing a light-reflection aluminum door frame molding which comprises a multi-coating-applied aluminum material to thereby improve corrosion resistance and reduce costs. A method for manufacturing a light-reflection aluminum door frame molding includes cutting a metallic plate into a predetermined size, performing anodizing on the metallic plate to form an oxidized film on a surface thereof, performing opaque clear coating and transparent coating on the metallic plate to implement light reflection, and performing press molding on the metallic plate to provide the metallic plate in the shape of a door frame molding.

Abstract: Provided are a nonvolatile memory cell and a method of manufacturing the same. The nonvolatile memory cell includes a memory transistor and a driver transistor. The memory transistor includes a semiconductor layer, a buffer layer, an organic ferroelectric layer, and a gate electrode, which are disposed on a substrate. The driver transistor includes the semiconductor layer, the buffer layer, a gate insulating layer, and the gate electrode, which are disposed on the substrate. The memory transistor and the driver transistor are disposed on the same substrate. The nonvolatile memory cell is transparent in a visible light region.

Abstract: A ray tracing core comprises a ray tracing unit (RTU), a control unit, and a tree build unit (TBU). The ray tracing unit performs ray tracing based on a special partitioning structure. The control unit calculates the degree of complexity of the spatial partitioning structure by monitoring the load state of the ray tracing unit. The tree build unit builds the spatial partitioning structure having the degree of complexity which is calculated. The load state is determined based on a frame rate which is processed in the pertinent unit. The spatial partitioning structure applies a K-dimensional tree. For example, the degree of complexity can be modified according to either the maximum primitive number of a leaf node with respect to a K-dimensional tree structure or a tree depth.

Abstract: An estimating method for transmitting torque of a dry type clutch in a vehicle, may include a slip determining step of determining by a processor whether only one clutch slips between an engine and a transmission, a transmitting torque estimating step of estimating a current transmitting torque of the dry type clutch by using a torque observer when the only one clutch slips as a result of performing the slip determining step, and an updating step of reflecting the current transmitting torque of the dry type clutch estimated in the transmitting torque estimating step and an actuator torque in the transmitting torque estimating step to a T-S (Torque-Stroke) curve.

Abstract: A method and an apparatus are disclosed for moving an execution point of a multimedia file through an expansive search of a multimedia file being executed by the multimedia executing apparatus. When the multimedia executing apparatus enters into an expansive search mode during a display of a progress bar having an execution point for execution of a multimedia file on a screen according to the execution of the multimedia file, an enlarged progress bar representing an enlarged section of the progress bar including the execution point is displayed on the screen.

Abstract: Data transmission apparatus and method thereof, and data reception apparatus and method thereof. Input data is encoded into a plurality of visual codes according to a visual code type. The visual code type includes a sequential type requiring sequential transmission and a nonsequential type not requiring sequential transmission. The sequential visual code includes start code, data code, and end code, and is displayed sequentially. The nonsequential visual code is displayed nonsequentially.

Abstract: Disclosed are an inverter, a NAND gate, and a NOR gate. The inverter includes: a pull-up unit constituted by a second thin film transistor outputting a first power voltage to an output terminal according to a voltage applied to a gate; a pull-down unit constituted by a fifth thin film transistor outputting a ground voltage to the output terminal according to an input signal applied to a gate; and a pull-up driver applying a second power voltage or the ground voltage to the gate of the second thin film transistor according to the input signal.

Abstract: Provided are a nonvolatile memory cell and a method of manufacturing the same. The nonvolatile memory cell includes a memory transistor and a driver transistor. The memory transistor includes a semiconductor layer, a buffer layer, an organic ferroelectric layer, and a gate electrode, which are disposed on a substrate. The driver transistor includes the semiconductor layer, the buffer layer, a gate insulating layer, and the gate electrode, which are disposed on the substrate. The memory transistor and the driver transistor are disposed on the same substrate. The nonvolatile memory cell is transparent in a visible light region.

Abstract: According to one embodiment, a method for notifying a reserved call of an electronic device includes registering a schedule of at least one time period, acquiring an outgoing number when an incoming call is rejected, determining a time of notifying the reserved call associated with the outgoing number by referring to the schedule, and notifying the reserved call associated with the outgoing number when the determined time arrives.

Abstract: Disclosed is a method for the treatment and/or diagnosis of cancer, using bacterial cell-derived microvesicles, which is highly effective in cancer therapy with a significant reduction in side effects. Also, a method is provided for delivering of a drug therapeutic or diagnostic for a disease, using bacterial cell-derived microvesicles loaded with the drug, thereby treating and diagnosing the disease effectively and specifically.

Abstract: Provided is a memory cell including: a ferroelectric transistor; a plurality of switching elements electrically connected to the ferroelectric transistor; and a plurality of control lines for transmitting individual control signals to each of the plurality of switching element for separately controlling the plurality of switching elements. The plurality of switching elements are configured to be separately controlled on the basis of the individual control signals so as to prevent each electrode of the ferroelectric transistor from being floated.

Abstract: An image forming apparatus includes a main body of the image forming apparatus; at least one image forming unit disposed in the main body; a light scanning unit that is disposed in the main body and scans light to form an electrostatic latent image on a photosensitive medium of the at least one image forming unit; a window open-closing shutter that is disposed to slidably move on a surface of the light scanning unit from which light emits, and moves between an open position where a light moving path is opened and a blocking position where the light moving path is blocked; a shutter operating lever that is disposed in the main body, and activates the window open-closing shutter to be positioned at either of the open position and the blocking position; and a pressure member that is disposed in the main body and presses the shutter operating lever.

Abstract: Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.

Abstract: Provided are a nonvolatile memory device and a method of fabricating the same, in which a phase-change layer is formed using a solid-state reaction to reduce a programmable volume, thereby lessening power consumption. The device includes a first reactant layer, a second reactant layer formed on the first reactant layer, and a phase-change layer formed between the first and second reactant layers due to a solid-state reaction between a material forming the first reactant layer and a material forming the second reactant layer. The phase-change memory device consumes low power and operates at high speed.

Abstract: A nonvolatile programmable switch device using a phase-change memory device and a method of manufacturing the same are provided. The switch device includes a substrate, a first metal electrode layer disposed on the substrate and including a plurality of terminals, a phase-change material layer disposed on the substrate and having a self-heating channel structure, the phase-change material layer having a plurality of introduction regions electrically contacting the terminals of the first metal electrode layer and a channel region interposed between the introduction regions, an insulating layer disposed on the first metal electrode layer and the phase-change material layer, a via hole disposed on the first metal electrode layer, and a second metal electrode layer disposed to fill the via hole.

Abstract: A bearing holder and a spindle motor having the same are disclosed. The bearing holder in accordance with an embodiment of the present invention can include a body, which has an insertion hole formed therein such that a bearing is inserted into the insertion hole, a first supporting protrusion, which is protruded downward from a bottom surface of the body along a circumference of the insertion hole, and a first bent indentation, which is formed on an inner circumferential surface of the first supporting protrusion such that the first supporting protrusion is bent toward an inner side. Thus, unnecessary deformation in the bearing holder can be prevented while the bearing holder is coupled to a base plate. Moreover, since the bearing holder forms an accurate positional relationship with respect to the base plate, noise and vibration can be prevented from occurring during the operation of the motor.

Abstract: Provided is a method of manufacturing a tail trim using a clad metal plate, and a tail trim made of a clad metal plate, which thus enables decrease in weight and improved corrosion resistance, and which further enables increased heat resistance. The method includes rolling two washed metal materials to obtain an initial clad metal plate, and then heat treating and further rolling the initial clad metal plate to obtain a final clad metal plate; pressing the final clad metal plate, thus forming a main tail trim and a housing, the housing including a tail trim upper cover and a tail trim lower cover; and subjecting the main tail trim and the housing to tungsten inert gas welding, thus manufacturing the tail trim.

Abstract: A liquid crystal display device includes a first substrate; first to fourth pixels arranged in a matrix pattern on the first substrate, the fourth pixel having an area smaller than each of the first and second pixels and larger than the third pixel; a second substrate facing the first substrate; first to fourth color filter patterns formed on the second substrate and respectively corresponding to the first to fourth pixels, wherein the first to fourth color filter patterns have green, blue, white and red colors, respectively; and a liquid crystal layer interposed between the first and second substrates.