Abstract: An acute kidney injury predicting system and a method thereof are proposed. A processor reads the data to be tested, the detection data, the machine learning algorithm and the risk probability comparison table from a main memory. The processor trains the detection data according to the machine learning algorithm to generate an acute kidney injury prediction model, and inputs the data to be tested into the acute kidney injury prediction model to generate an acute kidney injury characteristic risk probability and a data sequence table. The data sequence table lists the data to be tested in sequence according to a proportion of each of the data to be tested in the acute kidney injury characteristics. The processor selects one of the medical treatment data from the risk probability comparison table according to the acute kidney injury characteristic risk probability.

Abstract: A semiconductor structure includes a first metal-dielectric-metal layer, a first dielectric layer, a first conductive layer, a second conductive layer, and a second dielectric layer. The first metal-dielectric-metal layer includes a plurality of first fingers, a plurality of second fingers, and a first dielectric material. The first fingers are electrically connected to a first voltage. The second fingers are electrically connected to a second voltage different from the first voltage, and the first fingers and the second fingers are arranged in parallel and staggeredly. The first dielectric material is between the first fingers and the second fingers. The first dielectric layer is over the first metal-dielectric-metal layer. The first conductive layer is over the first dielectric layer. The second conductive layer is over the first conductive layer. The second dielectric layer is between the first conductive layer and the second conductive layer.

Abstract: A method for determining a collision distance includes receiving a series of data points from a second vehicle that were during the second vehicle driving on a historical path, the data points contain path information and steering wheel angle, the path information contains position information; determining whether the first vehicle is located within a preset area range corresponding to the second vehicle using a series of positions of the second vehicle and the current position of the first vehicle; if the first vehicle is currently located within the preset area range, determining a lane change state of the second vehicle in the historical path according to the steering wheel angle, the lane change state represents the second vehicle changing lanes; and determining the collision distance between the vehicles according to the lane change state, the current position of the first vehicle, and the series of data points.

Abstract: A micro-electro-mechanical system (MEMS) microphone is provided. The MEMS microphone includes a substrate, a diaphragm, a backplate and a first protrusion. The substrate has an opening portion. The diaphragm is disposed on one side of the substrate and extends across the opening portion of the substrate. The backplate includes a plurality of acoustic holes. The backplate is disposed on one side of the diaphragm. An air gap is formed between the backplate and the diaphragm. The first protrusion extends from the backplate towards the air gap.

Abstract: An electronic device has a keyboard with an internal membrane. The membrane has a set of strain gauges configured to respond to a key press, such as when a collapsible dome collapses into contact with the membrane. The strain gauges are connected in a half Wheatstone bridge configuration and are positioned on the membrane in order to limit effects of temperature and subtle flexure of the membrane. The strain gauges are also configured to magnify detection of a resistance differential when a keycap is pressed with sufficient force.

Abstract: A control method of a grinding water flow rate during a double side grinding process. A double side grinder used includes a grinding wheel, a feed unit and a water supply device, wherein a water inlet is disposed on the feed unit. The control method includes: prepare for grinding and complete the installation of a workpiece according to an operation procedure of the double side grinder; during a process of double side grinding, the flow rate of the water inlet is set to decrease with the shortening of the teeth length of the grinding wheel, with the flow rate of the water inlet being set to have a linear relationship with the teeth length of the grinding wheel.

Abstract: The present disclosure provides a preparation method for hydrothermal synthesis of fly ash silicate aggregate including: mixing sodium metasilicate, potassium hydroxide, and inorganic-organic hybrid excitation monomer as raw materials to obtain an inorganic-organic composite activator; preparing a silicate aggregate raw material, mixing measured fly ash, carbide slag, quicklime, and vitrified micro bubble by mass, adding the inorganic-organic composite activator and continue stirring to produce a mixture; forming a ball disc, wetting an expanded perlite that forms a core of the ball by spraying water, adding a prepared mixture, spraying water while adding, standing and curing, performing a maturation and activation treatment in an autoclave, undergoing a silicon calcium reaction for a hydrothermal synthesis to obtain the silicate aggregates.

Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.

Abstract: A sewing machine includes a main body and a quick release needle plate module. The main body includes a base seat having an inner frame, and an outer case that is mounted to the inner frame and that defines an accommodating compartment. The quick release needle plate module includes a catch member, and a needle plate that covers the accommodating compartment, that is detachably pivoted to a rear section of the inner frame, and that engages the catch member. The quick release needle plate module further includes a press member inserted through the outer case and the inner frame, and operable to push the catch member to disengage the catch member. The needle plate has a plate body that covers the accommodating compartment, and a resilient member mounted between the inner frame and the plate body for driving pivot action of the plate body away from the inner frame.

Abstract: A method for removing a heavy metal from water includes subjecting a microbial solution containing a liquid culture of a urease-producing bacterial strain and a reaction solution containing a manganese compound and urea to a microbial-induced precipitation reaction, so as to obtain biomineralized manganese carbonate (MnCO3) particles, admixing the biomineralized MnCO3 particles with water containing a heavy metal, so that the biomineralized MnCO3 particles adsorb the heavy metal in the water to form a precipitate, and removing the precipitate from the water.

Abstract: The present disclosure provides one embodiment of a method making semiconductor structure. The method includes forming a composite stress layer on a semiconductor substrate, wherein the forming of the composite stress layer includes forming a first stress layer of a dielectric material with a first compressive stress and forming a second stress layer of the dielectric material with a second compressive stress on the first stress layer, the second compressive stress being greater than the first compressive stress; and patterning the semiconductor substrate to form fin active regions using the composite stress layer as an etch mask.

Abstract: A foldable electronic device, including a first body, a second body, an air valve movably disposed in the first body, at least one triggering member, and a hinge connecting the first body and the second body, is provided. The first body has multiple openings respectively located at two opposite surfaces. The triggering member is movably disposed in the first body and has a part exposed outside the first body. The air valve and the triggering member are mutually on moving paths of each other. The first body and the second body are rotated to be folded or unfolded relative to each other by the hinge. A part of the triggering member is suitable for bearing a force such that the triggering member drives the air valve, so that the air valve opens or closes the openings.

Abstract: A light emitting substrate is provided. The light emitting substrate includes a plurality of light emitting controlling units arranged in M rows and N columns, M is an integer equal to or greater than one, N is an integer equal to or greater than one, wherein a respective one of the plurality of light emitting controlling units includes a plurality of light emitting elements arranged in J rows and I columns, J being an integer equal to or greater than one, I being an integer equal to or greater than one, a i-th column of the I columns of light emitting elements includes J rows of light emitting elements, 1?i?I; (M×J) number of first voltage signal lines; and (M×J) number of groups of second voltage signal lines.

Abstract: A semiconductor structure is provided and includes a first gate structure, a second gate structure, and at least one local interconnect that extend continuously across a non-active region from a first active region to a second active region. The semiconductor structure further includes a first separation spacer disposed on the first gate structure and first vias on the first gate structure. The first vias are arranged on opposite sides of the first separation spacer are isolated from each other and apart from the first separation spacer by different distances.

Abstract: A computing system performs partial cache deactivation. The computing system estimates the leakage power of a cache based on operating conditions of the cache including voltage and temperature. The computing system further identifies a region of the cache as a candidate for deactivation based on cache hit counts. The computing system then adjusts the size of the region for the deactivation based on the leakage power and a bandwidth of a memory hierarchy device. The memory hierarchy device is at the next level to the cache in a memory hierarchy of the computing system.

Abstract: A laser device is provided. The laser device includes a stack of epitaxial layers, a first conductive layer, an intermediate layer, and a first electrode. The stack of epitaxial layers has a central region and an edge region. The stack of epitaxial layers includes a first reflective structure, an active region disposed on the first reflective structure, a second reflective structure disposed on the active region. The first conductive layer disposes on the stack of epitaxial layers and covers the central region and at least a part of the edge region. The intermediate layer has a first opening that corresponding to the central region of the stack of epitaxial layers, wherein the intermediate layer comprises insulating material or metal. The first electrode disposes on the first conductive layer.

Abstract: A computing system performs shared cache allocation to allocate cache resources to groups of tasks. The computing system monitors the bandwidth at a memory hierarchy device that is at a next level to the cache in a memory hierarchy of the computing system. The computing system estimates a change in dynamic power from a corresponding change in the bandwidth before and after the cache resources are allocated. The allocation of the cache resources are adjusted according to an allocation policy that receives inputs including the estimated change in the dynamic power and a performance indication of task execution.

Abstract: In an embodiment, a device includes: a gate electrode; a epitaxial source/drain region adjacent the gate electrode; one or more inter-layer dielectric (ILD) layers over the epitaxial source/drain region; a first source/drain contact extending through the ILD layers, the first source/drain contact connected to the epitaxial source/drain region; a contact spacer surrounding the first source/drain contact; and a void disposed between the contact spacer and the ILD layers.

Abstract: A computer-implemented method for processing and/or analyzing nucleic acid sequencing data comprises receiving a first data input and a second data input. The first data input comprises untargeted sequencing data generated from a first nucleic acid sample obtained from a subject. The second data input comprises target-specific sequencing data generated from a second nucleic acid sample obtained from the subject. Next, with the aid of a computer processor, the first data input and the second data input are combined to produce a combined data set. Next, an output derived from the combined data set is generated. The output is indicative of the presence or absence of one or more polymorphisms of the first nucleic acid sample and/or the second nucleic acid sample.