Abstract: A semiconductor device includes a substrate, a dielectric layer disposed over the substrate, and an interconnect structure extending through the dielectric layer. The dielectric layer includes a low-k dielectric material which includes silicon carbonitride having a carbon content ranging from about 30 atomic % to about 45 atomic %. The semiconductor device further includes a thermal dissipation feature extending through the dielectric layer and disposed to be spaced apart from the interconnect structure.

Abstract: The present invention provides a display panel, including a backplane having flexibility, a first fixing member, a front frame having flexibility, and a display module provided between the backplane and the front frame. The backplane has a base plate with a first side. The first fixing member extends corresponding to the first side and has a first predetermined curvature. The first fixing member at least has a first wall body standing upright relative to the base plate, and the first fixing member is relatively fixed to the backplane, so that the curvature of the backplane can be adjusted corresponding to the first fixing member. The front frame is provided in a manner that extends correspondingly to the periphery of the backplane, and is relatively fixed to the backplane, so that the curvature of the front frame is relatively adapted to that of the backplane.

Abstract: A cleaning device comprises a carrier and a cleaning unit. On the surface of the carrier, the cleaning unit comprises cleaning bodies of trapezoidal cylinders with a first surface and two inclined planes. The first surface is parallel to the surface of the carrier. The inclined planes face the circumference of the carrier and are separately located between adjacent two of the cleaning bodies. The first surface has a distance of 6.5 mm±10% to the surface of the carrier. The inclined planes at two sides have an angle of 50°±10% in between. When the cleaning body starts contacting a wafer, one of the inclined planes is deformed as a beginning. Then, gentle area changes is formed from contacting until departing between the cleaning body and the wafer. The wafer is thus stably forced to improve cleaning ability of scrubbing and stabilize surface friction of the wafer.

Abstract: Among other things, one or more systems and techniques for promoting metal plating profile uniformity are provided. A magnetic structure is positioned relative to a semiconductor wafer that is to be electroplated with metal during a metal plating process. In an embodiment, the magnetic structure applies a force that decreases an edge plating current by moving metal ions away from a wafer edge of the semiconductor wafer. In an embodiment, the magnetic structure applies a force that increases a center plating current by moving metal ions towards a center portion of the semiconductor wafer. In this way, the edge plating current has a current value that is similar to a current value of the center plating current. The similarity between the center plating current and the edge plating current promotes metal plating uniformity.

Abstract: Among other things, one or more systems and techniques for promoting metal plating profile uniformity are provided. A magnetic structure is positioned relative to a semiconductor wafer that is to be electroplated with metal during a metal plating process. In an embodiment, the magnetic structure applies a force that decreases an edge plating current by moving metal ions away from a wafer edge of the semiconductor wafer. In an embodiment, the magnetic structure applies a force that increases a center plating current by moving metal ions towards a center portion of the semiconductor wafer. In this way, the edge plating current has a current value that is similar to a current value of the center plating current. The similarity between the center plating current and the edge plating current promotes metal plating uniformity.

Abstract: A gas purifying apparatus is used to receive chemical liquid mixing with a gas, and used to clean the gas. The gas purifying apparatus includes a plurality of liquid status detection sensors, a plurality of gas status detection sensors, a plurality of pumping motors, a gas driving motor and a controller. The liquid status detection sensors are disposed in a chemical liquid transmission path, and detect a plurality of liquid status information of the chemical liquid. The gas status detection sensors are disposed in a gas transmission path, and detect a plurality of gas status information of the gas. The controller performs an operation on the liquid status information and the gas status information to adjust a first setting value and a second setting value. The first setting value and the second setting value are respectively used to drive the pumping motors and the gas driving motor.

Abstract: Among other things, one or more systems and techniques for promoting metal plating profile uniformity are provided. A magnetic structure is positioned relative to a semiconductor wafer that is to be electroplated with metal during a metal plating process. In an embodiment, the magnetic structure applies a force that decreases an edge plating current by moving metal ions away from a wafer edge of the semiconductor wafer. In an embodiment, the magnetic structure applies a force that increases a center plating current by moving metal ions towards a center portion of the semiconductor wafer. In this way, the edge plating current has a current value that is similar to a current value of the center plating current. The similarity between the center plating current and the edge plating current promotes metal plating uniformity.

Abstract: A thin film deposition system and method provide for multiple target assemblies that may be separately powered. Each target assembly includes a target and associated magnet or set of magnets. The disclosure provides a tunable film profile produced by multiple power sources that separately power the target arrangements. The relative amounts of power supplied to the target arrangements may be customized to provide a desired film and may be varied in time to produce a film with varied characteristics.

Abstract: A method for manufacturing a high-strength and high-ductility steel includes steps in which an alloy steel is provided. The method continues with step in which the alloy steel is hot rolled, so that the microstructure of the alloy steel includes austenite, bainite and martensite. The method continues with step in which the hot-rolled alloy steel is annealed, so as to decompose bainite and martensite structures of the alloy steel into ferrite and austenite structures. The method continues with step in which the annealed alloy steel is cold rolled. The method continues with step in which the cold-rolled alloy steel is annealed, so as to manufacture a high-strength and high-ductility steel in a phase with 50% to 70% of residual austenite.

Abstract: An apparatus comprises: a shower head having a supply plenum for supplying the gas to the chamber and a vacuum manifold fluidly coupled to the supply plenum; and at least one vacuum system fluidly coupled to the vacuum manifold of the shower head.

Abstract: Among other things, one or more systems and techniques for promoting metal plating uniformity are provided. An insulator plate is positioned relative to a semiconductor wafer that is to be electroplated with metal during a metal plating process. The insulator plate comprises an insulator ring that provides a resistance to electrical plating current passing through the insulator ring to the semiconductor wafer. The insulator plate comprises one or more porous regions, such as holes, that introduce little to no additional resistance to electrical plating current passing through such porous regions to the semiconductor wafer. The insulator plate influences electrical plating current so that edge plating current has a current value similar to a center plating current. The similarity in plating current promotes metal plating uniformity for the semiconductor wafer.

Abstract: The present disclosure is directed to a physical vapor deposition system configured to heat a semiconductor substrate or wafer. In some embodiments the disclosed physical vapor deposition system comprises at least one heat source having one or more lamp modules for heating of the substrate. The lamp modules may be separated from the substrate by a shielding device. In some embodiments, the shielding device comprises a one-piece device or a two piece device. The disclosed physical vapor deposition system can heat the semiconductor substrate, reflowing a metal film deposited thereon without the necessity for separate chambers, thereby decreasing process time, requiring less thermal budget, and decreasing substrate damage.

Abstract: A thin film deposition system and method provide for multiple target assemblies that may be separately powered. Each target assembly includes a target and associated magnet or set of magnets. The disclosure provides a tunable film profile produced by multiple power sources that separately power the target arrangements. The relative amounts of power supplied to the target arrangements may be customized to provide a desired film and may be varied in time to produce a film with varied characteristics.

Abstract: A thin film deposition system and method provide for multiple target assemblies that may be separately powered. Each target assembly includes a target and associated magnet or set of magnets. The disclosure provides a tunable film profile produced by multiple power sources that separately power the target arrangements. The relative amounts of power supplied to the target arrangements may be customized to provide a desired film and may be varied in time to produce a film with varied characteristics.

Abstract: A method for manufacturing a high-strength and high-ductility steel includes steps in which an alloy steel is provided. The method continues with step in which the alloy steel is hot rolled, so that the microstructure of the alloy steel includes austenite, bainite and martensite. The method continues with step in which the hot-rolled alloy steel is annealed, so as to decompose bainite and martensite structures of the alloy steel into ferrite and austenite structures. The method continues with step in which the annealed alloy steel is cold rolled. The method continues with step in which the cold-rolled alloy steel is annealed, so as to manufacture a high-strength and high-ductility steel in a phase with 50% to 70% of residual austenite.

Abstract: In some embodiments, the present disclosure relates to a plasma processing system configured to form a symmetric plasma distribution around a workpiece. In some embodiments, the plasma processing system comprises a plurality of coils symmetrically positioned around a processing chamber. When a current is provided to the coils, separate magnetic fields, which operate to ionize the target atoms, emanate from the separate coils. The separate magnetic fields operate upon ions within the coils to form a plasma on the interior of the coils. Furthermore, the separate magnetic fields are superimposed upon one another between coils to form a plasma on the exterior of the coils. Therefore, the disclosed plasma processing system can form a plasma that continuously extends along a perimeter of the workpiece with a high degree of uniformity (i.e., without dead spaces).

Abstract: The present disclosure is directed to a physical vapor deposition system configured to heat a semiconductor substrate or wafer. In some embodiments the disclosed physical vapor deposition system comprises at least one heat source having one or more lamp modules for heating of the substrate. The lamp modules may be separated from the substrate by a shielding device. In some embodiments, the shielding device comprises a one-piece device or a two piece device. The disclosed physical vapor deposition system can heat the semiconductor substrate, reflowing a metal film deposited thereon without the necessity for separate chambers, thereby decreasing process time, requiring less thermal budget, and decreasing substrate damage.

Abstract: Among other things, one or more systems and techniques for promoting metal plating uniformity are provided. An insulator plate is positioned relative to a semiconductor wafer that is to be electroplated with metal during a metal plating process. The insulator plate comprises an insulator ring that provides a resistance to electrical plating current passing through the insulator ring to the semiconductor wafer. The insulator plate comprises one or more porous regions, such as holes, that introduce little to no additional resistance to electrical plating current passing through such porous regions to the semiconductor wafer. The insulator plate influences electrical plating current so that edge plating current has a current value similar to a center plating current. The similarity in plating current promotes metal plating uniformity for the semiconductor wafer.

Abstract: Among other things, one or more systems and techniques for promoting metal plating profile uniformity are provided. A magnetic structure is positioned relative to a semiconductor wafer that is to be electroplated with metal during a metal plating process. In an embodiment, the magnetic structure applies a force that decreases an edge plating current by moving metal ions away from a wafer edge of the semiconductor wafer. In an embodiment, the magnetic structure applies a force that increases a center plating current by moving metal ions towards a center portion of the semiconductor wafer. In this way, the edge plating current has a current value that is similar to a current value of the center plating current. The similarity between the center plating current and the edge plating current promotes metal plating uniformity.

Abstract: The present disclosure is directed to a physical vapor deposition system configured to heat a semiconductor substrate or wafer. In some embodiments the disclosed physical vapor deposition system comprises at least one heat source having one or more lamp modules for heating of the substrate. The lamp modules may be separated from the substrate by a shielding device. In some embodiments, the shielding device comprises a one-piece device or a two piece device. The disclosed physical vapor deposition system can heat the semiconductor substrate, reflowing a metal film deposited thereon without the necessity for separate chambers, thereby decreasing process time, requiring less thermal budget, and decreasing substrate damage.