Patents by Inventor Ming-Fu Tsai
Ming-Fu Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220352709Abstract: An ESD power clamp device includes an ESD detection circuit; a controlling circuit coupled with the ESD detection circuit; a field effect transistor (FET) coupled with the controlling circuit, and an impedance element coupled with the FET. The FET includes a drain terminal coupled with a first supply node; a gate terminal coupled with the controlling circuit; a source terminal coupled with a second supply node via the impedance element; and a bulk terminal coupled with second supply node.Type: ApplicationFiled: July 29, 2021Publication date: November 3, 2022Inventors: Ken-Hao Fan, Yu-Ti Su, Tzu-Cheng Kao, Ming-Fu Tsai, Chia-Lin HSU
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Publication number: 20220344929Abstract: An electrostatic discharge (ESD) circuit includes an ESD detection circuit, a clamp circuit and an ESD assist circuit. The ESD detection circuit is coupled between a first and a second node. The first node has a first voltage. The second node has a second voltage. The clamp circuit includes a first transistor having a first gate, a first drain, a first source and a first body terminal. The first gate is coupled to at least the ESD detection circuit by a third node. The first drain is coupled to the second node. The first source and the first body terminal are coupled together at the first node. The ESD assist circuit is coupled between the first node and the third node, and is configured to clamp a third voltage of the third node at the first voltage during an ESD event at the first node or the second node.Type: ApplicationFiled: October 26, 2021Publication date: October 27, 2022Inventors: Chia-Lin HSU, Ming-Fu TSAI, Yu-Ti SU, Kuo-Ji CHEN
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Patent number: 11482952Abstract: A method for determining zero crossing occurrence in an alternating current (AC) signal with constant frequency of a permanent magnet synchronous motor (PMSM) includes: sampling the AC signal to obtain a plurality of data points; starting to count a number of consecutive data points that have sampled values with a same sign in a detection range, to generate a count value, wherein the consecutive data points are included in the plurality of data points; determining whether the count value is equal to a zero crossing determination value; and in response to the count value being equal to the zero crossing determination value, determining that a zero crossing occurs at a last data point of the consecutive data points.Type: GrantFiled: October 7, 2021Date of Patent: October 25, 2022Assignee: Elite Semiconductor Microelectronics Technology Inc.Inventors: Shih-Chieh Wang, Yong-Yi Jhuang, Ming-Fu Tsai
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Patent number: 11474554Abstract: A circuit is provided for providing a sampling clock to de-serializers in a communication physical layer. The circuit includes a slave delay lock loop (DLL), to receive an input clock and provide the sampling clock to the de-serializers. Further, a master DLL is included for receiving the input clock and outputting a control signal to the slave DLL to adjust a delay amount of the sampling clock of the slave DLL. The master DLL replicates a circuit of the slave DLL with a loop detection and determines the control signal for output.Type: GrantFiled: January 12, 2021Date of Patent: October 18, 2022Assignees: Global Unichip Corporation, Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ting-Hao Wang, Ting-Chin Cho, Hui-Ting Yang, Yung-Sheng Fang, Igor Elkanovich, Amnon Parnass, Chiung-Chi Lin, Ming-Fu Tsai
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Publication number: 20220302105Abstract: An electrostatic discharge (ESD) protection circuit is coupled between first and second power supply buses. The ESD protection circuit includes a detection circuit; a pull-up circuit, coupled to the detection circuit, comprising at least a first n-type transistor; a pull-down circuit, coupled to the pull-up circuit, comprising at least a second n-type transistor; and a bypass circuit, coupled to the pull-up and pull-down circuits, wherein the detection circuit is configured to detect whether an ESD event is present on either the first or the second bus so as to cause the pull-up and pull-down circuits to selectively enable the bypass circuit for providing a discharging path between the first and second power supply buses.Type: ApplicationFiled: June 9, 2022Publication date: September 22, 2022Inventors: Ming-Fu Tsai, Tzu-Heng Chang, Yu-Ti Su, Kai-Ping Huang
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Publication number: 20220294212Abstract: A device is disclosed herein. The device includes a bias generator, an ESD driver, and a logic circuit. The bias generator includes a first transistor. The ESD driver includes a second transistor and a third transistor coupled to each other in series. The logic circuit is configured to generate a logic control signal. A first terminal of the first transistor is configured to receive a reference voltage signal, a control terminal of the first transistor is configured to receive a detection signal in response to an ESD event being detected, a second terminal of the first transistor is coupled to a control terminal of the third transistor, and a control terminal of the second transistor is configured to receive the logic control signal.Type: ApplicationFiled: May 29, 2022Publication date: September 15, 2022Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Po-Lin PENG, Yu-Ti SU, Chia-Wei HSU, Ming-Fu TSAI, Shu-Yu SU, Li-Wei CHU, Jam-Wem LEE, Chia-Jung CHANG, Hsiang-Hui CHENG
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Patent number: 11404409Abstract: An electrostatic discharge (ESD) protection circuit is coupled between first and second power supply buses. The ESD protection circuit includes a detection circuit; a pull-up circuit, coupled to the detection circuit, comprising at least a first n-type transistor; a pull-down circuit, coupled to the pull-up circuit, comprising at least a second n-type transistor; and a bypass circuit, coupled to the pull-up and pull-down circuits, wherein the detection circuit is configured to detect whether an ESD event is present on either the first or the second bus so as to cause the pull-up and pull-down circuits to selectively enable the bypass circuit for providing a discharging path between the first and second power supply buses.Type: GrantFiled: November 16, 2020Date of Patent: August 2, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ming-Fu Tsai, Tzu-Heng Chang, Yu-Ti Su, Kai-Ping Huang
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Publication number: 20220221893Abstract: A circuit is provided for providing a sampling clock to de-serializers in a communication physical layer. The circuit includes a slave delay lock loop (DLL), to receive an input clock and provide the sampling clock to the de-serializers. Further, a master DLL is included for receiving the input clock and outputting a control signal to the slave DLL to adjust a delay amount of the sampling clock of the slave DLL. The master DLL replicates a circuit of the slave DLL with a loop detection and determines the control signal for output.Type: ApplicationFiled: January 12, 2021Publication date: July 14, 2022Applicants: Global Unichip Corporation, Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ting-Hao Wang, Ting-Chin Cho, Hui-Ting Yang, Yung-Sheng Fang, Igor Elkanovich, Amnon Parnass, Chiung-Chi Lin, Ming-Fu Tsai
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Publication number: 20220208753Abstract: In some embodiments, a semiconductor device is provided, including a first doped region of a first conductivity type configured as a first terminal of a first diode, a second doped region of a second conductivity type configured as a second terminal of the first diode, wherein the first and second doped regions are coupled to a first voltage terminal; a first well of the first conductivity type surrounding the first and second doped regions in a layout view; a third doped region of the first conductivity type configured as a first terminal, coupled to an input/output pad, of a second diode; and a second well of the second conductivity type surrounding the third doped region in the layout view. The second and third doped regions, the first well, and the second well are configured as a first electrostatic discharge path between the I/O pad and the first voltage terminal.Type: ApplicationFiled: March 21, 2022Publication date: June 30, 2022Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Po-Lin PENG, Li-Wei CHU, Ming-Fu TSAI, Jam-Wem LEE, Yu-Ti SU
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Publication number: 20220208752Abstract: A semiconductor device includes a first diode, a second diode, a clamp circuit and a third diode. The first diode is coupled between an input/output (I/O) pad and a first voltage terminal. The second diode is coupled with the first diode, the I/O pad and a second voltage terminal. The clamp circuit is coupled between the first voltage terminal and the second voltage terminal. The second diode and the clamp circuit are configured to direct a first part of an electrostatic discharge (ESD) current flowing between the I/O pad and the first voltage terminal. The third diode, coupled to the first voltage terminal, and the second diode include a first semiconductor structure configured to direct a second part of the ESD current flowing between the I/O pad and the first voltage terminal.Type: ApplicationFiled: March 21, 2022Publication date: June 30, 2022Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Po-Lin PENG, Li-Wei CHU, Ming-Fu TSAI, Jam-Wem LEE, Yu-Ti SU
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Patent number: 11355927Abstract: A device is disclosed herein. The device includes an electrostatic discharge (ESD) detector, a bias generator, and an ESD driver including at least two transistors coupled to each other in series. The ESD detector is configured to detect an input signal and generate a detection signal in response to an ESD event being detected. The bias generator is configured to generate a bias signal according to the detection signal. The at least two transistors are controlled according to the bias signal and a logic control signal, and the input signal is applied across the at least two transistors.Type: GrantFiled: July 22, 2020Date of Patent: June 7, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Po-Lin Peng, Yu-Ti Su, Chia-Wei Hsu, Ming-Fu Tsai, Shu-Yu Su, Li-Wei Chu, Jam-Wem Lee, Chia-Jung Chang, Hsiang-Hui Cheng
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Patent number: 11282831Abstract: A semiconductor device includes a first diode, a second diode, a clamp circuit and a third diode. The first diode is coupled between an input/output (I/O) pad and a first voltage terminal. The second diode is coupled with the first diode, the I/O pad and a second voltage terminal. The clamp circuit is coupled between the first voltage terminal and the second voltage terminal. The second diode and the clamp circuit are configured to direct a first part of an electrostatic discharge (ESD) current flowing between the I/O pad and the first voltage terminal. The third diode, coupled to the first voltage terminal, and the second diode include a first semiconductor structure configured to direct a second part of the ESD current flowing between the I/O pad and the first voltage terminal.Type: GrantFiled: September 18, 2019Date of Patent: March 22, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Po-Lin Peng, Li-Wei Chu, Ming-Fu Tsai, Jam-Wem Lee, Yu-Ti Su
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Publication number: 20220029414Abstract: A device is disclosed herein. The device includes an electrostatic discharge (ESD) detector, a bias generator, and an ESD driver including at least two transistors coupled to each other in series. The ESD detector is configured to detect an input signal and generate a detection signal in response to an ESD event being detected. The bias generator is configured to generate a bias signal according to the detection signal. The at least two transistors are controlled according to the bias signal and a logic control signal, and the input signal is applied across the at least two transistors.Type: ApplicationFiled: July 22, 2020Publication date: January 27, 2022Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Po-Lin PENG, Yu-Ti SU, Chia-Wei HSU, Ming-Fu TSAI, Shu-Yu SU, Li-Wei CHU, Jam-Wem LEE, Chia-Jung CHANG, Hsiang-Hui CHENG
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Patent number: 10964037Abstract: An optical projector module to establish distance to target object in a field of view for three dimensional image acquisition purposes includes a printed circuit board, point light sources mounted on the printed circuit board to emit a plurality of light beams, a lens unit apart from the plurality of point light sources, and a distance adjusting unit connected to the lens unit. A memory storage device is also included. The lens unit comprises separated lenses, the adjusting unit can adjust distances between the lenses of the lens unit, and light beams with a number of light spot patterns can accordingly be projected. Previously-captured images in the memory storage device can be referred to in seeking target objects in the field of view and light beams in different spot-concentrations on or around the target object enable calculations for the capture of images in three dimensions of the target object.Type: GrantFiled: January 30, 2019Date of Patent: March 30, 2021Assignee: Chiun Mai Communication Systems, Inc.Inventors: Yu-Yang Chih, Ming-Fu Tsai, Hsueh-Feng Hsu
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Patent number: 10957687Abstract: Some embodiments relate to a semiconductor device on a substrate. An interconnect structure is disposed over the semiconductor substrate. A first conductive pad is disposed over the interconnect structure. A second conductive pad is disposed over the interconnect structure and spaced apart from the first conductive pad. A third conductive pad is disposed over the interconnect structure and spaced apart from the first and second conductive pads. A first ESD protection element is electrically coupled between the first and second conductive pads. A first device under test (DUT) is electrically coupled between the first and third conductive pads.Type: GrantFiled: March 13, 2020Date of Patent: March 23, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Jen-Chou Tseng, Ming-Fu Tsai, Tzu-Heng Chang
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Publication number: 20210082743Abstract: Methods and devices are provided herein for enhancing robustness of a bipolar electrostatic discharge (ESD) device. The robustness of a bipolar ESD device includes providing an emitter region and a collector region adjacent to the emitter region. An isolation structure is provided between the emitter region and the collector region. A ballasting characteristic at the isolation structure is modified by inserting at least one partition structure therein. Each partition structure extends substantially abreast at least one of the emitter and the collector regions.Type: ApplicationFiled: November 30, 2020Publication date: March 18, 2021Inventors: Alexander Kalnitsky, Jen-Chou Tseng, Chia-Wei Hsu, Ming-Fu Tsai
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Publication number: 20210082906Abstract: A semiconductor device includes a first diode, a second diode, a clamp circuit and a third diode. The first diode is coupled between an input/output (I/O) pad and a first voltage terminal. The second diode is coupled with the first diode, the I/O pad and a second voltage terminal. The clamp circuit is coupled between the first voltage terminal and the second voltage terminal. The second diode and the clamp circuit are configured to direct a first part of an electrostatic discharge (ESD) current flowing between the I/O pad and the first voltage terminal. The third diode, coupled to the first voltage terminal, and the second diode include a first semiconductor structure configured to direct a second part of the ESD current flowing between the I/O pad and the first voltage terminal.Type: ApplicationFiled: September 18, 2019Publication date: March 18, 2021Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Po-Lin PENG, Li-Wei CHU, Ming-Fu TSAI, Jam-Wem LEE, Yu-Ti SU
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Publication number: 20210066287Abstract: An electrostatic discharge (ESD) protection circuit is coupled between first and second power supply buses. The ESD protection circuit includes a detection circuit; a pull-up circuit, coupled to the detection circuit, comprising at least a first n-type transistor; a pull-down circuit, coupled to the pull-up circuit, comprising at least a second n-type transistor; and a bypass circuit, coupled to the pull-up and pull-down circuits, wherein the detection circuit is configured to detect whether an ESD event is present on either the first or the second bus so as to cause the pull-up and pull-down circuits to selectively enable the bypass circuit for providing a discharging path between the first and second power supply buses.Type: ApplicationFiled: November 16, 2020Publication date: March 4, 2021Inventors: Ming-Fu TSAI, Tzu-Heng CHANG, Yu-Ti SU, Kai-Ping HUANG
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Patent number: 10854501Abstract: Methods and devices are provided herein for enhancing robustness of a bipolar electrostatic discharge (ESD) device. The robustness of a bipolar ESD device includes providing an emitter region and a collector region adjacent to the emitter region. An isolation structure is provided between the emitter region and the collector region. A ballasting characteristic at the isolation structure is modified by inserting at least one partition structure therein. Each partition structure extends substantially abreast at least one of the emitter and the collector regions.Type: GrantFiled: June 28, 2018Date of Patent: December 1, 2020Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Alexander Kalnitsky, Jen-Chou Tseng, Chia-Wei Hsu, Ming-Fu Tsai
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Patent number: 10840237Abstract: An electrostatic discharge (ESD) protection circuit is coupled between first and second power supply buses. The ESD protection circuit includes a detection circuit; a pull-up circuit, coupled to the detection circuit, comprising at least a first n-type transistor; a pull-down circuit, coupled to the pull-up circuit, comprising at least a second n-type transistor; and a bypass circuit, coupled to the pull-up and pull-down circuits, wherein the detection circuit is configured to detect whether an ESD event is present on either the first or the second bus so as to cause the pull-up and pull-down circuits to selectively enable the bypass circuit for providing a discharging path between the first and second power supply buses.Type: GrantFiled: February 9, 2018Date of Patent: November 17, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ming-Fu Tsai, Tzu-Heng Chang, Yu-Ti Su, Kai-Ping Huang