Ming-Hsin Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
Abstract: A fuse structure for a semiconductor device on a substrate includes a fuse having an electrically conductive fuse line of a standard fuse length formed in an electrically conductive layer disposed over the substrate, and a pair of electrically conductive, inwardly bent interconnects formed in a first plurality of electrically conductive layers disposed over the substrate, below the electrically conductive layer in which the fuse line is formed. The inwardly bent interconnects couple the fuse line to a circuit area of the substrate disposed under the fuse line. The fuse structure may further include a protective guard ring formed around the fuse. The guard ring includes a second plurality of electrically conductive interconnects.
Abstract: The present invention relates to a novel flocculant comprising bacteria of the Bacillus genus cultivated in a culture medium comprising soybean protein, glucose, molasses, and yeast. Alternatively, the flocculant comprises soybean protein. The present invention also relates to methods of making the flocculant, including fermentation method for mass production, and methods of using the flocculant in water treatment.
January 21, 2004
November 4, 2004
Heng-Chuan Wang, Ming-Hsin Li, Hsu-Wen Tsang, Mei-Mao Wu, Hsui-Ping Pearl Lin
Abstract: A method of forming a grooved fuse (plug fuse) in the same step that via plugs are formed in the guard ring area 14 and in product device areas. A key point of the invention is to form fuses from the via plug layer, not from the metal layers. Also, key guard rings are formed around the plug guise. The invention can include the following: a semiconductor structure is provided having a fuse area, a guard ring area surrounding the fuse area; and a device area. First and second conductive strips are formed. First and second insulating layers are formed over the first and second conductive strips. Plug contacts and fuse plugs are formed through the first and second insulating layers to the first and second conductive strips. A third insulating layer is formed over the second insulating layer. Metal lines are formed over the third insulating layer in the device area. A fuse via opening is formed in the third insulating layer. A plug fuse is formed in the fuse via opening.
September 18, 1998
Date of Patent:
December 19, 2000
Taiwan Semiconductor Manufacturing Company
Kuo Ching Huang, Tse-Liang Ying, Yu-Hua Lee, Ming-Hsin Li