Abstract: A semiconductor process includes the following steps. Two gates are formed on a substrate. A recess is formed in the substrate beside the gates. A surface modification process is performed on a surface of the recess to modify the shape of the recess and change the contents of the surface.

Abstract: A method for fabricating a semiconductor device, and a semiconductor device made with the method are described. In the method, a cavity is formed in a substrate, a first epitaxy process is performed under a pressure higher than 65 torr to form a buffer layer in the cavity, and a second epitaxy process is performed to form a semiconductor compound layer on the buffer layer in the cavity. In the semiconductor device, the ratio (S/Y) of the thickness S of the buffer layer on a lower sidewall of the cavity to the thickness Y of the buffer layer at the bottom of the cavity ranges from 0.6 to 0.8.

Abstract: A semiconductor process includes the following steps. Two gates are formed on a substrate. A recess is formed in the substrate beside the gates. A surface modification process is performed on a surface of the recess to modify the shape of the recess and change the contents of the surface.

Abstract: A semiconductor process includes the steps of providing a substrate with fin structures formed thereon, performing an epitaxy process to grow an epitaxial structure on each fin structure, forming a conformal cap layer on each epitaxial structure, where adjacent conformal cap layers contact each other, and performing an etching process to separate contacting conformal cap layers.

Abstract: A method of forming a semiconductor device is disclosed. At least one gate structure is provided on a substrate, wherein the gate structure includes a first spacer formed on a sidewall of a gate. A first disposable spacer material layer is deposited on the substrate covering the gate structure. The first disposable spacer material layer is etched to form a first disposable spacer on the first spacer. A second disposable spacer material layer is deposited on the substrate covering the gate structure. The second disposable spacer material layer is etched to form a second disposable spacer on the first disposable spacer. A portion of the substrate is removed, by using the first and second disposable spacers as a mask, so as to form two recesses in the substrate beside the gate structure. A stress-inducing layer is formed in the recesses.

Abstract: A semiconductor process includes the following steps. Two gates are formed on a substrate. A recess is formed in the substrate beside the gates. A surface modification process is performed on a surface of the recess to modify the shape of the recess and change the contents of the surface.

Abstract: An epitaxial process includes the following step. A recess is formed in a substrate. A seeding layer is formed to cover a surface of the recess. A buffer layer is formed on the seeding layer. An etching process is performed on the buffer layer to homogenize and shape the buffer layer. An epitaxial layer is formed on the homogenized flat bottom shape buffer layer.

Abstract: A method of forming a semiconductor device is disclosed. At least one gate structure is provided on a substrate, wherein the gate structure includes a first spacer formed on a sidewall of a gate. A first disposable spacer material layer is deposited on the substrate covering the gate structure. The first disposable spacer material layer is etched to form a first disposable spacer on the first spacer. A second disposable spacer material layer is deposited on the substrate covering the gate structure. The second disposable spacer material layer is etched to form a second disposable spacer on the first disposable spacer. A portion of the substrate is removed, by using the first and second disposable spacers as a mask, so as to form two recesses in the substrate beside the gate structure. A stress-inducing layer is formed in the recesses.

Abstract: An organizing device is for organizing multiple optical fiber lines to run parallel to each other on a plane. The organizing device includes a guiding unit and a positioning unit. The positioning unit includes a main body slidably disposed on the guiding unit, a first positioning part extending from the main body, and a second positioning part that extends from the main body in a same direction as the first positioning part and that is spaced apart from the first positioning part. The main body, the first positioning part and the second positioning part cooperate to define a positioning slot. The distance between the first and second positioning parts corresponds to a diameter of the optical fiber lines.

Abstract: An organizing device is for organizing multiple optical fiber lines to run parallel to each other on a plane. The organizing device includes a guiding unit and a positioning unit. The positioning unit includes a main body slidably disposed on the guiding unit, a first positioning part extending from the main body, and a second positioning part that extends from the main body in a same direction as the first positioning part and that is spaced apart from the first positioning part. The main body, the first positioning part and the second positioning part cooperate to define a positioning slot. The distance between the first and second positioning parts corresponds to a diameter of the optical fiber lines.

Abstract: A fire extinguishing device is disclosed. The fire extinguishing device is installed at a motor vehicle with an engine. The fire extinguishing device includes a first and a second water tanks, a foam tank and a spray gun. Utilizing a pump and a driving unit, the fire extinguishing device in the present invention uses the engine in the motor vehicle without installing and purchasing another engine to become a flexible fire extinguisher which can as well save costs.

Abstract: The present invention is to provide a thin type vacuum chamber device, wherein two hollow slabs are fastened by a claw fastener to form a thin type simple structure that can maintain a high vacuum state, and wherein the air inside the chamber is pumped out to attain a vacuum state with a high pressure suction activity. The thin-chamber design of the present invention can decrease the number of the components and reduce the cost. The special assembly design of the vacuum chamber of the present invention can effectively decrease the length of the transmission cable and thus can reduce signal attenuation and noise interference. The present invention has the advantage of convenient operation and is very suitable to a two-dimensional infrared sensor.

Abstract: The present invention is to provide a thin type vacuum chamber device, wherein two hollow slabs are fastened by a claw fastener to form a thin type simple structure that can maintain a high vacuum state, and wherein the air inside the chamber is pumped out to attain a vacuum state with a high pressure suction activity. The thin-chamber design of the present invention can decrease the number of the components and reduce the cost. The special assembly design of the vacuum chamber of the present invention can effectively decrease the length of the transmission cable and thus can reduce signal attenuation and noise interference. The present invention has the advantage of convenient operation and is very suitable to a two-dimensional infrared sensor.