Patents by Inventor Ming-Hua Chang

Ming-Hua Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170142520
    Abstract: The present invention discloses a hybrid electrostatic headphone module, with the hybrid electrostatic headphone module disposed in the interior of a left and a right ear cup of a stereo headphones. The hybrid electrostatic headphone module is assembled as a single unit from a traditional moving coil type headphone unit and an electret headphone unit (E-STAT), which are respectively responsible for medium-low frequency bands and medium-high frequency bands. A frequency divider assembled from a frequency division capacitance and a drive transformer divides a complete signal into medium-high frequency and medium-low frequency bands, which are then respectively supplied to high and low frequency sound speakers for output therefrom.
    Type: Application
    Filed: December 4, 2016
    Publication date: May 18, 2017
    Inventors: Tien-Lai Wang, Ming-Hua Chang
  • Publication number: 20170047439
    Abstract: The present invention provides a fin-shaped field effect transistor (FinFET), comprises: a substrate having a fin structure; a plurality trenches formed on the fin structure with an alloy grown in the trenches; a gate structure on the fin structure perpendicular to an extending direction of the fin structure in-between the plurality of trenches; and an amorphous layer on a surface of the fin structure exposed by the gate structure and disposed in-between the gate structure and the alloy. The invention also provides a manufacturing method of a fin-shaped field effect transistor (FinFET).
    Type: Application
    Filed: May 17, 2016
    Publication date: February 16, 2017
    Inventors: Chun-Yu Chen, Chung-Ting Huang, Ming-Hua Chang, Tien-Chen CHAN, Yen-Hsing CHEN, Hsin-Chang WU
  • Patent number: 9397214
    Abstract: A semiconductor device is provided includes a substrate, a gate structure formed on the substrate, an epitaxial source/drain structure respectively formed at two sides of the gate structure, and a boron-rich interface layer. The boron-rich interface layer includes a bottom-and-sidewall portion and a top portion, and the epitaxial source/drain structure is enclosed by the bottom-and-sidewall portion and the top portion.
    Type: Grant
    Filed: February 16, 2015
    Date of Patent: July 19, 2016
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Tien-Chen Chan, Hsin-Chang Wu, Chun-Yu Chen, Ming-Hua Chang, Sheng-Hsu Liu, Chieh-Lung Wu, Chung-Min Tsai, Neng-Hui Yang
  • Patent number: 9373705
    Abstract: The present invention provides a manufacturing method of a fin-shaped field effect transistor (FinFET), comprises the following steps. Firstly, providing a substrate having a fin structure; forming a gate structure on the fin structure perpendicular to a extending direction of the fin structure; performing an amorphous implantation to form an amorphous layer on a exposed portion of the fin structure exposed by the gate structure and a light-doping implantation; forming a sacrificial spacer on sides of the gate structure covering a portion of the amorphous layer on the fin structure; forming a trench on the fin structure adjacent to the sacrificial spacer; growing an alloy in the trench; and then removing the sacrificial spacer. The invention also provides a FinFET device thereof.
    Type: Grant
    Filed: August 14, 2015
    Date of Patent: June 21, 2016
    Assignee: UNITED MICROELECTRONICS CORPORATION
    Inventors: Chun-Yu Chen, Chung-Ting Huang, Ming-Hua Chang, Tien-Chen Chan, Yen-Hsing Chen, Hsin-Chang Wu
  • Patent number: 9263579
    Abstract: A semiconductor process includes the following steps. Two gates are formed on a substrate. A recess is formed in the substrate beside the gates. A surface modification process is performed on a surface of the recess to modify the shape of the recess and change the contents of the surface.
    Type: Grant
    Filed: May 27, 2015
    Date of Patent: February 16, 2016
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Ming-Hua Chang, Chun-Yuan Wu, Chin-Cheng Chien, Tien-Wei Yu, Yu-Shu Lin, Szu-Hao Lai
  • Patent number: 9214551
    Abstract: A method for fabricating a semiconductor device, and a semiconductor device made with the method are described. In the method, a cavity is formed in a substrate, a first epitaxy process is performed under a pressure higher than 65 torr to form a buffer layer in the cavity, and a second epitaxy process is performed to form a semiconductor compound layer on the buffer layer in the cavity. In the semiconductor device, the ratio (S/Y) of the thickness S of the buffer layer on a lower sidewall of the cavity to the thickness Y of the buffer layer at the bottom of the cavity ranges from 0.6 to 0.8.
    Type: Grant
    Filed: February 19, 2014
    Date of Patent: December 15, 2015
    Assignee: United Microelectronics Corp.
    Inventors: Ming-Hua Chang, Tien-Wei Yu, I-Cheng Hu, Chieh-Lung Wu, Yu-Shu Lin, Chun-Jen Chen, Tsung-Mu Yang, Tien-Chen Chan, Chin-Cheng Chien
  • Publication number: 20150281850
    Abstract: The present invention discloses a hybrid electrostatic headphone module, with the hybrid electrostatic headphone module disposed in the interior of a left and a right ear cup of a stereo headphones. The hybrid electrostatic headphone module is assembled as a single unit from a traditional moving coil type headphone unit and an electret headphone unit (E-STAT), which are respectively responsible for medium-low frequency bands and medium-high frequency bands. A frequency divider assembled from a frequency division capacitance and a drive transformer divides a complete signal into medium-high frequency and medium-low frequency bands, which are then respectively supplied to high and low frequency sound speakers for output therefrom.
    Type: Application
    Filed: August 17, 2014
    Publication date: October 1, 2015
    Applicant: VERISONIX CORPORATION
    Inventors: Tien-Lai Wang, Ming-Hua Chang
  • Publication number: 20150263170
    Abstract: A semiconductor process includes the following steps. Two gates are formed on a substrate. A recess is formed in the substrate beside the gates. A surface modification process is performed on a surface of the recess to modify the shape of the recess and change the contents of the surface.
    Type: Application
    Filed: May 27, 2015
    Publication date: September 17, 2015
    Inventors: Ming-Hua Chang, Chun-Yuan Wu, Chin-Cheng Chien, Tien-Wei Yu, Yu-Shu Lin, Szu-Hao Lai
  • Publication number: 20150236158
    Abstract: A method for fabricating a semiconductor device, and a semiconductor device made with the method are described. In the method, a cavity is formed in a substrate, a first epitaxy process is performed under a pressure higher than 65 torr to form a buffer layer in the cavity, and a second epitaxy process is performed to form a semiconductor compound layer on the buffer layer in the cavity. In the semiconductor device, the ratio (S/Y) of the thickness S of the buffer layer on a lower sidewall of the cavity to the thickness Y of the buffer layer at the bottom of the cavity ranges from 0.6 to 0.8.
    Type: Application
    Filed: February 19, 2014
    Publication date: August 20, 2015
    Applicant: United Microelectronics Corp.
    Inventors: Ming-Hua Chang, Tien-Wei Yu, I-Cheng Hu, Chieh-Lung Wu, Yu-Shu Lin, Chun-Jen Chen, Tsung-Mu Yang, Tien-Chen Chan, Chin-Cheng Chien
  • Patent number: 9076652
    Abstract: A semiconductor process includes the following steps. Two gates are formed on a substrate. A recess is formed in the substrate beside the gates. A surface modification process is performed on a surface of the recess to modify the shape of the recess and change the contents of the surface.
    Type: Grant
    Filed: May 27, 2013
    Date of Patent: July 7, 2015
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Ming-Hua Chang, Chun-Yuan Wu, Chin-Cheng Chien, Tien-Wei Yu, Yu-Shu Lin, Szu-Hao Lai
  • Publication number: 20150170916
    Abstract: A semiconductor process includes the steps of providing a substrate with fin structures formed thereon, performing an epitaxy process to grow an epitaxial structure on each fin structure, forming a conformal cap layer on each epitaxial structure, where adjacent conformal cap layers contact each other, and performing an etching process to separate contacting conformal cap layers.
    Type: Application
    Filed: December 17, 2013
    Publication date: June 18, 2015
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Tien-Wei Yu, Chun-Jen Chen, Tsung-Mu Yang, Ming-Hua Chang, Yu-Shu Lin, Chin-Cheng Chien
  • Patent number: 9034705
    Abstract: A method of forming a semiconductor device is disclosed. At least one gate structure is provided on a substrate, wherein the gate structure includes a first spacer formed on a sidewall of a gate. A first disposable spacer material layer is deposited on the substrate covering the gate structure. The first disposable spacer material layer is etched to form a first disposable spacer on the first spacer. A second disposable spacer material layer is deposited on the substrate covering the gate structure. The second disposable spacer material layer is etched to form a second disposable spacer on the first disposable spacer. A portion of the substrate is removed, by using the first and second disposable spacers as a mask, so as to form two recesses in the substrate beside the gate structure. A stress-inducing layer is formed in the recesses.
    Type: Grant
    Filed: March 26, 2013
    Date of Patent: May 19, 2015
    Assignee: United Microelectronics Corp.
    Inventors: Tsai-Yu Wen, Tsuo-Wen Lu, Yu-Ren Wang, Chin-Cheng Chien, Tien-Wei Yu, Hsin-Kuo Hsu, Yu-Shu Lin, Szu-Hao Lai, Ming-Hua Chang
  • Publication number: 20140349467
    Abstract: A semiconductor process includes the following steps. Two gates are formed on a substrate. A recess is formed in the substrate beside the gates. A surface modification process is performed on a surface of the recess to modify the shape of the recess and change the contents of the surface.
    Type: Application
    Filed: May 27, 2013
    Publication date: November 27, 2014
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Ming-Hua Chang, Chun-Yuan Wu, Chin-Cheng Chien, Tien-Wei Yu, Yu-Shu Lin, Szu-Hao Lai
  • Patent number: 8853060
    Abstract: An epitaxial process includes the following step. A recess is formed in a substrate. A seeding layer is formed to cover a surface of the recess. A buffer layer is formed on the seeding layer. An etching process is performed on the buffer layer to homogenize and shape the buffer layer. An epitaxial layer is formed on the homogenized flat bottom shape buffer layer.
    Type: Grant
    Filed: May 27, 2013
    Date of Patent: October 7, 2014
    Assignee: United Microelectronics Corp.
    Inventors: Szu-Hao Lai, Chun-Yuan Wu, Chin-Cheng Chien, Tien-Wei Yu, Ming-Hua Chang, Yu-Shu Lin, Tsai-Yu Wen, Hsin-Kuo Hsu
  • Publication number: 20140295629
    Abstract: A method of forming a semiconductor device is disclosed. At least one gate structure is provided on a substrate, wherein the gate structure includes a first spacer formed on a sidewall of a gate. A first disposable spacer material layer is deposited on the substrate covering the gate structure. The first disposable spacer material layer is etched to form a first disposable spacer on the first spacer. A second disposable spacer material layer is deposited on the substrate covering the gate structure. The second disposable spacer material layer is etched to form a second disposable spacer on the first disposable spacer. A portion of the substrate is removed, by using the first and second disposable spacers as a mask, so as to form two recesses in the substrate beside the gate structure. A stress-inducing layer is formed in the recesses.
    Type: Application
    Filed: March 26, 2013
    Publication date: October 2, 2014
    Applicant: United Microelectronics Corp.
    Inventors: Tsai-Yu Wen, Tsuo-Wen Lu, Yu-Ren Wang, Chin-Cheng Chien, Tien-Wei Yu, Hsin-Kuo Hsu, Yu-Shu Lin, Szu-Hao Lai, Ming-Hua Chang
  • Patent number: 8805154
    Abstract: An organizing device is for organizing multiple optical fiber lines to run parallel to each other on a plane. The organizing device includes a guiding unit and a positioning unit. The positioning unit includes a main body slidably disposed on the guiding unit, a first positioning part extending from the main body, and a second positioning part that extends from the main body in a same direction as the first positioning part and that is spaced apart from the first positioning part. The main body, the first positioning part and the second positioning part cooperate to define a positioning slot. The distance between the first and second positioning parts corresponds to a diameter of the optical fiber lines.
    Type: Grant
    Filed: December 17, 2012
    Date of Patent: August 12, 2014
    Assignees: Gloriole Electroptic Technology Corp., Shen Zhen Wonderwin Technology Co., Ltd., Tasin Technology Co., Ltd.
    Inventors: Jim Lin, Danxu Wu, Ming-Hua Chang
  • Publication number: 20140016906
    Abstract: An organizing device is for organizing multiple optical fiber lines to run parallel to each other on a plane. The organizing device includes a guiding unit and a positioning unit. The positioning unit includes a main body slidably disposed on the guiding unit, a first positioning part extending from the main body, and a second positioning part that extends from the main body in a same direction as the first positioning part and that is spaced apart from the first positioning part. The main body, the first positioning part and the second positioning part cooperate to define a positioning slot. The distance between the first and second positioning parts corresponds to a diameter of the optical fiber lines.
    Type: Application
    Filed: December 17, 2012
    Publication date: January 16, 2014
    Applicants: Gloriole Electroptic Technology Corp., TASIN TECHNOLOGY CO., LTD., SHEN ZHEN WONDERWIN TECHNOLOGY CO., LTD.
    Inventors: JIM LIN, Danxu Wu, Ming-Hua Chang
  • Publication number: 20120024549
    Abstract: A fire extinguishing device is disclosed. The fire extinguishing device is installed at a motor vehicle with an engine. The fire extinguishing device includes a first and a second water tanks, a foam tank and a spray gun. Utilizing a pump and a driving unit, the fire extinguishing device in the present invention uses the engine in the motor vehicle without installing and purchasing another engine to become a flexible fire extinguisher which can as well save costs.
    Type: Application
    Filed: December 3, 2010
    Publication date: February 2, 2012
    Applicant: YUE SAN ENTERPRISE CO., LTD.
    Inventors: Yuan-Huan CHANG, Ming-Hua CHANG
  • Patent number: 7601959
    Abstract: The present invention is to provide a thin type vacuum chamber device, wherein two hollow slabs are fastened by a claw fastener to form a thin type simple structure that can maintain a high vacuum state, and wherein the air inside the chamber is pumped out to attain a vacuum state with a high pressure suction activity. The thin-chamber design of the present invention can decrease the number of the components and reduce the cost. The special assembly design of the vacuum chamber of the present invention can effectively decrease the length of the transmission cable and thus can reduce signal attenuation and noise interference. The present invention has the advantage of convenient operation and is very suitable to a two-dimensional infrared sensor.
    Type: Grant
    Filed: January 17, 2008
    Date of Patent: October 13, 2009
    Assignee: National Central University
    Inventors: Mang Ou-Yang, Tzong-Sheng Lee, Ming-Hua Chang
  • Publication number: 20090184248
    Abstract: The present invention is to provide a thin type vacuum chamber device, wherein two hollow slabs are fastened by a claw fastener to form a thin type simple structure that can maintain a high vacuum state, and wherein the air inside the chamber is pumped out to attain a vacuum state with a high pressure suction activity. The thin-chamber design of the present invention can decrease the number of the components and reduce the cost. The special assembly design of the vacuum chamber of the present invention can effectively decrease the length of the transmission cable and thus can reduce signal attenuation and noise interference. The present invention has the advantage of convenient operation and is very suitable to a two-dimensional infrared sensor.
    Type: Application
    Filed: January 17, 2008
    Publication date: July 23, 2009
    Inventors: Mang Ou-Yang, Tzong-Sheng Lee, Ming-Hua Chang