Abstract: A capacitive ultrasonic transducer device includes a substrate, a first capacitive structure, a second capacitive structure, a first film structure and a second film structure. The first capacitive structure is disposed on the substrate, and includes a first electrode and a second electrode. A first gap and a dielectric layer are located between the first electrode and the second electrode. The second capacitive structure is disposed on the substrate, and includes a third electrode and a fourth electrode. A second gap is located between the third electrode and the fourth electrode. The first film structure is configured to seal the first gap. The second film structure is connected to the third electrode and the fourth electrode, and configured to seal the second gap. A first width between the first electrode and the second electrode is different from a second width of the second gap.

Abstract: An antenna includes a piezoelectric disc. The antenna further includes a first electrode disposed on a first surface of the piezoelectric disc and a second electrode disposed on a second surface of the piezoelectric disc that is opposite to the first surface. The first electrode and the second electrode are to receive a time-varying voltage to excite a mechanical vibration in the piezoelectric disc, and the piezoelectric disc is to radiate electromagnetic energy at a particular frequency responsive to the mechanical vibration.

Abstract: An antenna includes a piezoelectric disc. The antenna further includes a first electrode disposed on a first surface of the piezoelectric disc and a second electrode disposed on a second surface of the piezoelectric disc that is opposite to the first surface. The first electrode and the second electrode are to receive a time-varying voltage to excite a mechanical vibration in the piezoelectric disc, and the piezoelectric disc is to radiate electromagnetic energy at a particular frequency responsive to the mechanical vibration.

Abstract: An active type temperature compensation resonator structure is provided, including a resonant body and a temperature compensation element embedded in the resonant body for a compensation current to pass therethrough. The temperature compensation element has a specified temperature coefficient of resistance that reflects the temperature of the resonant body. The magnitude of the compensated current corresponds to the reflected temperature of the resonant body. With the active type temperature compensation resonator structure, the temperature of the resonant body can be accurately reacted by the specified temperature coefficient of resistance, such that the temperature compensation element, through which the compensated current passes, can dynamically correspond to the temperature of the resonant body and accurately provide the resonant body with temperature compensation.

Abstract: A CMOS-MEMS resonant transducer and a method for fabricating the same are disclosed, which provide the CMOS-MEMS resonant transducer having narrow gaps(<500 nm) with high yield by etching a well-defined free-free beam structure, furthermore, the TiN layers disposed at the bottom of the resonant body may efficiently reduce the frequency drift due to electrostatic charges. The method for fabricating the CMOS-MEMS resonant transducer is also adapted to the processes of CMOS-MEMS platform with various scales, which provides routing and MEMS design flexibility.

Abstract: An active type temperature compensation resonator structure is provided, including a resonant body and a temperature compensation element embedded in the resonant body for a compensation current to pass therethrough. The temperature compensation element has a specified temperature coefficient of resistance that reflects the temperature of the resonant body. The magnitude of the compensated current corresponds to the reflected temperature of the resonant body. With the active type temperature compensation resonator structure, the temperature of the resonant body can be accurately reacted by the specified temperature coefficient of resistance, such that the temperature compensation element, through which the compensated current passes, can dynamically correspond to the temperature of the resonant body and accurately provide the resonant body with temperature compensation.