Patents by Inventor Ming Huei Lien

Ming Huei Lien has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190391874
    Abstract: The disclosure is directed to a memory storage apparatus having a dynamic data repair mechanism. The memory storage apparatus includes a connection interface; a memory array; and a memory control circuit configured at least to: receive, from the connection interface, a write command which includes a user data and an address of the user data; encode the user data as a codeword which includes the user data and parity bits; write the codeword, in a first memory location of the memory array, as a written codeword; perform a read procedure of the written codeword to determine whether the written codeword is erroneously written; and store a redundant codeword of the user data in a second memory location in response to having determined that the written codeword is erroneously written.
    Type: Application
    Filed: June 28, 2019
    Publication date: December 26, 2019
    Applicant: Winbond Electronics Corp.
    Inventors: Chuen-Der Lien, Ming-Huei Shieh, Seow-Fong Lim, Ngatik Cheung, Chi-Shun Lin
  • Patent number: 10514980
    Abstract: An encoding method for a memory storage apparatus adopting a Lien ECC scheme is provided. The memory storage apparatus comprises an ECC encoder using a Lien Code. The encoding method includes: receiving a write command comprising a write address and a write data; reading an existing codeword comprising a first flip bit indicating bit-flipping of the existing codeword and flipping bits of the existing codeword based on the first flip bit; encoding the write data into a new codeword based on a Lien Code by an ECC encoder, and flipping bits of the new codeword based on a number of bits required to be changed from the existing codeword to the new codeword; and writing the new codeword comprising a first flip bit indicating bit-flipping of the new codeword to the write address In addition, a memory storage apparatus using the encoding method based on the Lien Code is provided.
    Type: Grant
    Filed: March 22, 2018
    Date of Patent: December 24, 2019
    Assignee: Winbond Electronics Corp.
    Inventors: Chuen-Der Lien, Ming-Huei Shieh, Seow Fong Lim, Ngatik Cheung, Chi-Shun Lin
  • Publication number: 20190340070
    Abstract: An encoding method for a memory storage apparatus adopting an ECC algorithm is provided. The memory storage apparatus comprises an ECC encoder. The encoding method includes: receiving a write command comprising a write address and a write data; reading an existing codeword; attaching a flip bit to the write data; encoding the write data and the flip bit to generate parity bits based on the ECC algorithm by the ECC encoder and attaching the write data and the flip bit to the plurality of parity bits to generate a new codeword; flipping the new codeword based on a number of bits among selected bits required to be changed from the existing codeword to the new codeword; and writing one of the new codeword and the flipped new codeword to the write address. In addition, a memory storage apparatus using the encoding method is provided.
    Type: Application
    Filed: July 12, 2019
    Publication date: November 7, 2019
    Applicant: Winbond Electronics Corp.
    Inventors: Chuen-Der Lien, Ming-Huei Shieh, Chi-Shun Lin, Ngatik Cheung
  • Publication number: 20190294497
    Abstract: The disclosure is directed to a method and an apparatus for implementing an error correcting code (ECC) used by a memory storage apparatus. In an aspect of the disclosure, the method would include not limited to: receiving a write command having a write address and a write data; reading an existing codeword comprising a predetermined bit sequence; encoding the write data into a new codeword based on a default ECC; flipping at least one bit of the new codeword based on a number of bits required to be changed from the existing codeword to the new codeword; writing the new codeword, wherein in response to every message bit of the new codeword to be flipped once, either an average or a maximum number of parity bits flips of the new codeword is minimized according to a modified ECC which is based on the default ECC.
    Type: Application
    Filed: July 13, 2018
    Publication date: September 26, 2019
    Inventors: Chuen-Der Lien, Ming-Huei Shieh, Chi-Shun Lin, Ngatik Cheung, Seow Fong Lim
  • Publication number: 20190294496
    Abstract: An encoding method for a memory storage apparatus adopting a Lien ECC scheme is provided. The memory storage apparatus comprises an ECC encoder using a Lien Code. The encoding method includes: receiving a write command comprising a write address and a write data; reading an existing codeword comprising a first flip bit indicating bit-flipping of the existing codeword and flipping bits of the existing codeword based on the first flip bit; encoding the write data into a new codeword based on a Lien Code by an ECC encoder, and flipping bits of the new codeword based on a number of bits required to be changed from the existing codeword to the new codeword; and writing the new codeword comprising a first flip bit indicating bit-flipping of the new codeword to the write address In addition, a memory storage apparatus using the encoding method based on the Lien Code is provided.
    Type: Application
    Filed: March 22, 2018
    Publication date: September 26, 2019
    Applicant: Winbond Electronics Corp.
    Inventors: Chuen-Der Lien, Ming-Huei Shieh, Seow Fong Lim, Ngatik Cheung, Chi-Shun Lin
  • Patent number: 10372535
    Abstract: An encoding method for a memory storage apparatus adopting a Lien ECC scheme is provided. The memory storage apparatus comprises an ECC encoder using a Lien Code. The encoding method includes: receiving a first data or a second data which is one's complement of the first data; and performing an encoding operation based on the Lien Code by the ECC encoder. The encoding operation includes: if the first data is received, generating a first codeword according to the first data; and if the second data is received, generating a second codeword which is one's complement of the first codeword according to the second data. In addition, a memory storage apparatus using the encoding method based on the Lien Code is also provided.
    Type: Grant
    Filed: August 29, 2017
    Date of Patent: August 6, 2019
    Assignee: Winbond Electronics Corp.
    Inventors: Chuen-Der Lien, Ming-Huei Shieh, Seow-Fong Lim, Ngatik Cheung, Chi-Shun Lin
  • Patent number: 10348337
    Abstract: A data read method for a memory storage device is provided. The data read method includes: receiving a first read command from a host system for reading first data; calculating an error bit number of the first data; and performing a correction of the first data. If the error bit number is not greater than a predetermined number, finishing the correction of the first data and returning the corrected first data at a pre-defined timing. If the error bit number is greater than a predetermined number, finishing the correction of the first data and returning the corrected first data after the pre-defined timing. In addition, a memory storage device using the data read method is also provided.
    Type: Grant
    Filed: February 23, 2017
    Date of Patent: July 9, 2019
    Assignee: Winbond Electronics Corp.
    Inventors: Chuen-Der Lien, Ming-Huei Shieh, Chi-Shun Lin
  • Patent number: 9287154
    Abstract: Embodiments of an ultraviolet (UV) curing system for treating a semiconductor substrate such as a wafer are disclosed. The curing system generally includes a processing chamber, a wafer support for holding a wafer in the chamber, a UV radiation source disposed above the chamber, and a UV transparent window interspersed between the radiation source and wafer support. In one embodiment, the wafer support is provided by a belt conveyor operable to transport wafers through the chamber during UV curing. In another embodiment, the UV radiation source is a movable lamp unit that travels across the top of the chamber for irradiating the wafer. In another embodiment, the UV transparent window includes a UV radiation modifier that reduces the intensity of UV radiation on portions of the wafer positioned below the modifier. Various embodiments enhance wafer curing uniformity by normalizing UV intensity levels on the wafer.
    Type: Grant
    Filed: June 1, 2012
    Date of Patent: March 15, 2016
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ming Huei Lien, Chia-Ho Chen, Shu-Fen Wu, Chih-Tsung Lee, You-Hua Chou
  • Patent number: 9218998
    Abstract: An electrostatic chuck for clamping a warped workpiece has a clamping surface comprising a dielectric layer. The dielectric layer has a field and one or more zones formed of differing dielectric materials. One or more electrodes are coupled to a power supply, and a controller controls a clamping voltage supplied to the one or more electrodes via the power supply. An electrostatic attraction force associated with each of the field and one or more zones of the dielectric layer of the electrostatic chuck is induced, wherein the electrostatic attraction force varies based on the dielectric material of each of the field and one or more zones. The electrostatic attraction force is greater in the one or more zones than in the field, therein attracting warped regions of the workpiece to the clamping surface and clamping the warped workpiece to the clamping surface across a surface of the warped workpiece.
    Type: Grant
    Filed: October 3, 2014
    Date of Patent: December 22, 2015
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chia-Ho Chen, Ming Huei Lien, Shu-Fen Wu, Chih-Tsung Lee, You-Hua Chou
  • Publication number: 20150016011
    Abstract: An electrostatic chuck for clamping a warped workpiece has a clamping surface comprising a dielectric layer. The dielectric layer has a field and one or more zones formed of differing dielectric materials. One or more electrodes are coupled to a power supply, and a controller controls a clamping voltage supplied to the one or more electrodes via the power supply. An electrostatic attraction force associated with each of the field and one or more zones of the dielectric layer of the electrostatic chuck is induced, wherein the electrostatic attraction force varies based on the dielectric material of each of the field and one or more zones. The electrostatic attraction force is greater in the one or more zones than in the field, therein attracting warped regions of the workpiece to the clamping surface and clamping the warped workpiece to the clamping surface across a surface of the warped workpiece.
    Type: Application
    Filed: October 3, 2014
    Publication date: January 15, 2015
    Inventors: Chia-Ho Chen, Ming Huei Lien, Shu-Fen Wu, Chih-Tsung Lee, You-Hua Chou
  • Patent number: 8902561
    Abstract: An electrostatic chuck for clamping a warped workpiece has a clamping surface comprising a dielectric layer. The dielectric layer has a field and one or more zones formed of differing dielectric materials. One or more electrodes are coupled to a power supply, and a controller controls a clamping voltage supplied to the one or more electrodes via the power supply. An electrostatic attraction force associated with each of the field and one or more zones of the dielectric layer of the electrostatic chuck is induced, wherein the electrostatic attraction force varies based on the dielectric material of each of the field and one or more zones. The electrostatic attraction force is greater in the one or more zones than in the field, therein attracting warped regions of the workpiece to the clamping surface and clamping the warped workpiece to the clamping surface across a surface of the warped workpiece.
    Type: Grant
    Filed: February 2, 2012
    Date of Patent: December 2, 2014
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chia-Ho Chen, Ming Huei Lien, Shu-Fen Wu, Chih-Tsung Lee, You-Hua Chou
  • Patent number: 8796105
    Abstract: A method for depositing a polysilazane on a semiconductor wafer is provided. The method includes steps of disposing a silazane onto the semiconductor wafer, and heating the silazane to form the polysilazane on the semiconductor wafer. An apparatus for preparing a polysilazane on a semiconductor wafer is also provided.
    Type: Grant
    Filed: July 25, 2012
    Date of Patent: August 5, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: You-Hua Chou, Chih-Tsung Lee, Min-Hao Hong, Ming-Huei Lien, Chih-Jen Wu, Chen-Ming Huang
  • Publication number: 20140030866
    Abstract: A method for depositing a polysilazane on a semiconductor wafer is provided. The method includes steps of disposing a silazane onto the semiconductor wafer, and heating the silazane to form the polysilazane on the semiconductor wafer. An apparatus for preparing a polysilazane on a semiconductor wafer is also provided.
    Type: Application
    Filed: July 25, 2012
    Publication date: January 30, 2014
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: You-Hua Chou, Chih-Tsung Lee, Min-Hao Hong, Ming-Huei Lien, Chih-Jen Wu, Chen-Ming Huang
  • Publication number: 20130320235
    Abstract: Embodiments of an ultraviolet (UV) curing system for treating a semiconductor substrate such as a wafer are disclosed. The curing system generally includes a processing chamber, a wafer support for holding a wafer in the chamber, a UV radiation source disposed above the chamber, and a UV transparent window interspersed between the radiation source and wafer support. In one embodiment, the wafer support is provided by a belt conveyor operable to transport wafers through the chamber during UV curing. In another embodiment, the UV radiation source is a movable lamp unit that travels across the top of the chamber for irradiating the wafer. In another embodiment, the UV transparent window includes a UV radiation modifier that reduces the intensity of UV radiation on portions of the wafer positioned below the modifier. Various embodiments enhance wafer curing uniformity by normalizing UV intensity levels on the wafer.
    Type: Application
    Filed: June 1, 2012
    Publication date: December 5, 2013
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ming Huei LIEN, Chia-Ho CHEN, Shu-Fen WU, Chih-Tsung LEE, You-Hua CHOU
  • Publication number: 20130239889
    Abstract: A semiconductor manufacturing tool and method for operating the tool are provided. The semiconductor manufacturing tool includes a process chamber in which plasma operations or ion etching operations are carried out and a valve assembly for opening and closing a valve that provides for loading and unloading substrates into and out of, the semiconductor manufacturing tool. While a processing operation is being carried out in the chamber, a valve assembly purge operation also takes place. The valve assembly purge operation involves inert gases being directed to the valve assembly area to prevent the buildup of particles and contaminating films in the valve assembly. Because the valve assembly is maintained in a clean condition, particle contamination is reduced or eliminated.
    Type: Application
    Filed: March 14, 2012
    Publication date: September 19, 2013
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ming Huei LIEN, Chia-Ho CHEN, Shu-Fen WU, Chih-Tsung LEE, You-Hua CHOU
  • Publication number: 20130201596
    Abstract: An electrostatic chuck for clamping a warped workpiece has a clamping surface comprising a dielectric layer. The dielectric layer has a field and one or more zones formed of differing dielectric materials. One or more electrodes are coupled to a power supply, and a controller controls a clamping voltage supplied to the one or more electrodes via the power supply. An electrostatic attraction force associated with each of the field and one or more zones of the dielectric layer of the electrostatic chuck is induced, wherein the electrostatic attraction force varies based on the dielectric material of each of the field and one or more zones. The electrostatic attraction force is greater in the one or more zones than in the field, therein attracting warped regions of the workpiece to the clamping surface and clamping the warped workpiece to the clamping surface across a surface of the warped workpiece.
    Type: Application
    Filed: February 2, 2012
    Publication date: August 8, 2013
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chia-Ho Chen, Ming Huei Lien, Shu-Fen Wu, Chih-Tsung Lee, You-Hua Chou